Infineon Technologies ISK036N03LM5AULA1

Overview

ISK036N03LM5AULA1 from Infineon Technologies is an N-channel 30 V OptiMOSTM 5 power MOSFET in PG-VSON-6 package, optimized for high-power-density DC-DC converters and motor control stages. It delivers 3.6 mΩ R_DS(on) at V_GS = 10 V, supports 81 A continuous drain current at T_C = 25 °C, and features 100% avalanche-tested ruggedness for industrial switching applications.

For engineers reviewing the ISK036N03LM5AULA1 datasheet, ISK036N03LM5AULA1 pinout, ISK036N03LM5AULA1 application, or ISK036N03LM5AULA1 equivalent, key selection criteria include its 2.6–3.6 mΩ R_DS(on) range at 4.5–10 V gate drive, 8.2 nC Q_OSS, 7.2 nC Q_G(0–4.5 V), thermal resistance of 1.6 °C/W (junction-to-case), and integrated source-drain diode with 25.8 ns t_rr.

Technical Context

This device employs a trench-gate superjunction structure enabling ultra-low on-resistance in a 2×2 mm surface-mount package. Its gate threshold voltage (1.2–2.0 V) and low Q_G/Q_GD ratio support fast, efficient switching at 4.5 V logic-level drive, while the fused drain pins (1,2,5,6 + tab) reduce parasitic inductance in high-di/dt power stages.

The integrated body diode exhibits 0.79–1.0 V forward voltage at 20 A and 25.8–51.6 ns reverse recovery time-critical for synchronous rectification and freewheeling in buck converters and half-bridge motor drivers where shoot-through immunity and EMI control are design priorities.

Key Specifications

Pinout & Package

PG-VSON-6 (exposed drain pad) package with 2×2 mm footprint and 0.65 mm pitch. Bottom-side thermal pad ensures low-junction-to-board thermal resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Compared with IRLML6344TRPBF and DMN3025LSD-13, ISK036N03LM5AULA1 delivers superior power density via its 2×2 mm footprint, lowest R_DS(on) at 4.5 V drive, and best-in-class 1.6 °C/W junction-to-case thermal resistance-making it optimal for space-constrained, high-efficiency industrial and computing power stages.

Availability

ISK036N03LM5AULA1 is available at Aetrix Electronics and suitable for DC-DC buck converters, BLDC motor gate drivers, USB-C PD power delivery systems, and industrial PLC output stages requiring stable component supply and long-term industrial qualification.

Supply support for ISK036N03LM5AULA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and JEDEC standards.

This part belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-power-density switching applications in industrial power supplies, motor drives, and battery-powered equipment operating up to 30 V bus voltages.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The ISK036N03LM5AULA1 supports 51 A continuous drain current at T_C = 100 °C with V_GS = 10 V, as specified in Table 2 of the datasheet. This de-rating reflects thermal limitations of the PG-VSON-6 package and must be applied when ambient or board-level cooling cannot maintain T_C ≤ 25 °C.

Does this MOSFET require a gate resistor for stable switching?

Its internal gate resistance is 0.7–1.2 Ω, which suppresses oscillation in many 4.5 V–10 V drive configurations. However, a 2–5 Ω external series resistor is recommended for >200 kHz operation or when driving from high-impedance sources to control dV/dt and EMI.

Is the body diode suitable for synchronous rectification?

Yes-the integrated body diode has 25.8 ns typical reverse recovery time and 17.0 nC Q_rr at 20 A, enabling use in synchronous rectifier topologies up to 1 MHz. Its 0.79 V V_SD at 20 A also minimizes conduction loss relative to external Schottky diodes.

How is the "fused" drain configuration implemented in the PG-VSON-6 package?

Pins 1, 2, 5, 6 and the exposed thermal tab are internally shorted to form a single low-inductance drain node. This fused construction reduces package inductance below 0.5 nH and distributes current evenly-critical for minimizing voltage overshoot during hard switching in high-di/dt applications.