Infineon Technologies ISK057N04LM6ATSA1

Overview

ISK057N04LM6ATSA1 from Infineon Technologies is an N-channel logic-level OptiMOS™ 6 power MOSFET rated for 40 V V_DS, with a maximum R_DS(on) of 5.75 mΩ at V_GS = 10 V, 64 A continuous drain current (T_C = 25 °C), and 100% avalanche tested. It is housed in a PG-VSON-6 package with exposed drain tab and optimized for high-power-density DC-DC converters and synchronous rectification.

For engineers reviewing the ISK057N04LM6ATSA1 datasheet, ISK057N04LM6ATSA1 pinout, ISK057N04LM6ATSA1 application, or ISK057N04LM6ATSA1 equivalent, key selection criteria include its 5.75 mΩ on-resistance at 10 V gate drive, 9.7 nC total gate charge, 11 nC output charge, thermal resistance R_thJC of 1.6 °C/W, and logic-level compatibility down to 4.5 V.

Technical Context

This device implements a trench-based silicon MOSFET architecture with optimized cell pitch and deep-trench gate structure to achieve ultra-low R_DS(on) × Q_G figure-of-merit. Its gate threshold voltage (1.3–2.3 V) enables reliable turn-on with standard logic-level drivers, and its low Q_oss (11 nC) minimizes switching losses during hard-switched operation.

The integrated body diode exhibits fast reverse recovery (t_rr = 48–96 ns at di_F/dt = 100 A/µs) and low Q_rr (29–58 nC), supporting efficient synchronous FET operation in buck converters and OR-ing circuits without external Schottky assistance.

Key Specifications

Pinout & Package

PG-VSON-6 is a 2×2 mm leadless surface-mount package with bottom-side thermal pad (exposed drain). Pin 1, 2, 5, 6, and the tab are internally connected to drain; Pin 3 is gate; Pin 4 is source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLML6344TRPBF and SISD12DN04LC, ISK057N04LM6ATSA1 delivers optimal balance of low on-resistance (5.75 mΩ), moderate gate charge (9.7 nC), and robust 64 A current handling-making it uniquely suited for high-density, high-efficiency 40 V synchronous rectifiers and load switches where thermal and space constraints coexist.

Availability

ISK057N04LM6ATSA1 is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, industrial PLC I/O modules, and automotive body control modules requiring stable component supply and long-term manufacturability.

Supply support for ISK057N04LM6ATSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™ 6 family-designed specifically for high-efficiency, high-power-density DC-DC conversion in datacenter, industrial, and automotive applications where low R_DS(on), fast switching, and ruggedness are mandatory.

FAQ

What is the maximum junction temperature for continuous operation?

The ISK057N04LM6ATSA1 has a specified maximum junction temperature (T_j) of 150 °C, validated per JEDEC industrial qualification standards. Operation above this limit risks permanent degradation of the silicon die and bond wires; derating curves in the datasheet define safe I_D limits at elevated case temperatures.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 1–10 Ω) is recommended to dampen ringing caused by gate loop inductance and MOSFET input capacitance. The device's 0.7–1.2 Ω intrinsic gate resistance helps but does not eliminate the need for external control-especially in high-di/dt applications like synchronous buck converters operating above 300 kHz.

Can ISK057N04LM6ATSA1 be used as a high-side switch with 12 V gate drive?

Yes-it is fully specified for V_GS = 10 V and 12 V operation, with R_DS(on) guaranteed ≤5.75 mΩ and gate plateau voltage at ~2.9 V. For high-side use, ensure the gate driver can swing above the source potential (e.g., bootstrap or isolated supply) and that dV/dt immunity meets system requirements.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes-the body diode is characterized with t_rr = 48–96 ns and Q_rr = 29–58 nC under defined test conditions, making it suitable for synchronous rectification in buck and LLC topologies up to ~1 MHz. However, zero-voltage switching (ZVS) or active gate control is recommended to minimize reverse recovery loss in hard-switched designs.