Infineon Technologies ISP25DP06LMXTSA1

Overview

ISP25DP06LMXTSA1 from Infineon Technologies is a P-channel enhancement-mode logic-level MOSFET rated for -60 V drain-source voltage, 250 mΩ maximum R_DS(on) at V_GS = -4.5 V, -1.9 A continuous drain current, and fully qualified per JEDEC for industrial applications. It serves as a low-side load switch in power management circuits where compact size, avalanche robustness, and gate-drive compatibility with 3.3 V/5 V microcontrollers are required.

For engineers reviewing the ISP25DP06LMXTSA1 datasheet, ISP25DP06LMXTSA1 pinout, ISP25DP06LMXTSA1 application, or ISP25DP06LMXTSA1 equivalent, key selection factors include its SOT-223-4 package thermal performance (R_thJA = 70 °C/W), -1.5 V typical gate threshold, 100% avalanche-tested ruggedness, and verified operation across -55 °C to +150 °C junction temperature range.

Technical Context

This device implements a silicon-based vertical P-channel trench MOSFET architecture optimized for low-voltage logic-level gate drive and high-reliability industrial switching. Its design emphasizes low conduction loss at V_GS ≥ -4.5 V and stable R_DS(on) over temperature - confirmed by normalized resistance curves up to 150 °C and gate threshold drift < ±0.25 V across -80 °C to +150 °C.

The integrated body diode supports reverse recovery times of 29 ns and Q_rr = 43 nC under standardized conditions (V_R = -30 V, I_F = -1.5 A, di_F/dt = -100 A/µs), enabling use in synchronous rectification and flyback snubbing where fast diode response reduces switching loss.

Key Specifications

Pinout & Package

Package: PG-SOT223-4 (SOT-223-4), surface-mount, thermally enhanced with exposed drain pad. Pin 2 and Pin 4 are internally connected to drain; Pin 1 is gate; Pin 3 is source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Compared with IRLML6344TRPBF and DMG2305UVT-7, ISP25DP06LMXTSA1 trades higher R_DS(on) for proven industrial thermal performance (70 °C/W), full avalanche qualification, and SOT-223-4 mechanical robustness - making it optimal for fixed-installation equipment requiring long-term reliability.

Availability

ISP25DP06LMXTSA1 is available at Aetrix Electronics and suitable for industrial power supplies, automotive body electronics, USB-C PD sink protection, and programmable current limit circuits requiring stable component supply, JEDEC-qualified ruggedness, and RoHS/halogen-free compliance.

Supply support for ISP25DP06LMXTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's OptiMOS™ Small Signal Transistor product line, engineered for high-efficiency, logic-level switching in space-constrained industrial and automotive subsystems where thermal resilience and gate-drive simplicity are prioritized.

FAQ

Is ISP25DP06LMXTSA1 suitable for 3.3 V microcontroller gate drive?

Yes. With a typical gate threshold voltage of -1.5 V and guaranteed R_DS(on) ≤ 250 mΩ at V_GS = -4.5 V, the device fully enhances using standard 3.3 V GPIO outputs pulled low through a level-shifting resistor network. No external gate driver is required for ≤ 1.7 A loads at 25 °C ambient.

What is the maximum continuous drain current at 100 °C ambient?

At T_A = 100 °C with R_thJA = 70 °C/W, the maximum continuous drain current is -1.1 A for V_GS = -4.5 V and -1.2 A for V_GS = -10 V, as specified in Table 2 of the datasheet. Derating follows the linear curve shown in Diagram 2.

Does ISP25DP06LMXTSA1 include an integrated body diode?

Yes. It features a monolithic parasitic body diode with V_SD = -0.8 to -1.2 V at -1.5 A and T_j = 25 °C, t_rr = 29 ns, and Q_rr = 43 nC. This diode is rated for -1.5 A continuous forward current and -6 A pulsed current per Table 7.

How is thermal performance validated for this SOT-223-4 package?

Thermal resistance R_thJA = 70 °C/W is measured on a 40 mm × 40 mm × 1.5 mm FR4 PCB with 6 cm² copper area connected to drain pins, mounted vertically in still air. R_thJS = 25 °C/W (junction-to-soldering-point) confirms effective heat transfer to the PCB substrate.