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Infineon Technologies ISZ019N03L5SATMA1
- Part No.:
- ISZ019N03L5SATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
ISZ019N03L5SATMA1.pdf
- Description:
- MOSFET N-CH 30V 22A/40A TSDSON
- Quantity:
- Payment:
- Shipping:
Inventory:7,128
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Product details
Overview
ISZ019N03L5SATMA1 from Infineon Technologies is an N-channel OptiMOSTM power MOSFET rated for 30 V drain-source voltage, 1.9 mΩ maximum RDS(on) at VGS = 4.5 V, and 40 A continuous drain current at TC = 25 °C. It features ultra-low gate charge (QG = 44 nC at 0–10 V), low QOSS (25 nC), and optimized figure-of-merit for high-frequency synchronous buck converters in server and GPU power stages.
For engineers reviewing the ISZ019N03L5SATMA1 datasheet, ISZ019N03L5SATMA1 pinout, ISZ019N03L5SATMA1 application, or ISZ019N03L5SATMA1 equivalent, key selection criteria include its 1.9 mΩ RDS(on) @ 4.5 V, 2.0 mΩ max RDS(on) @ 4.5 V/20 A, thermal resistance RthJC = 1.8 K/W, and TSDSON-8 FL package with exposed drain pad for enhanced thermal performance.
Technical Context
This MOSFET employs Infineon's OptiMOSTM process to achieve a gate charge × RDS(on) product optimized for high-efficiency, high-frequency switching in synchronous rectification and primary-side switching applications. Its low QGD (6.5 nC) and fast switching times (td(off) = 28 ns, tf = 4.6 ns) reduce switching losses in SMPS operating above 500 kHz.
The device integrates a robust body diode with QRR = 20 nC and VSD = 0.8 V @ 20 A, enabling reliable operation in hard-switched and synchronous buck topologies. Its JEDEC-qualified reliability and 150 °C maximum junction temperature support industrial and computing-grade thermal environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 12 V and 24 V input rails in point-of-load converters |
| RDS(on), max | 1.9 mΩ @ VGS = 4.5 V - Enables <1 W conduction loss at 20 A, critical for high-current CPU/GPU VRMs |
| ID, cont | 40 A @ TC = 25 °C - Supports high-current output stages without parallel devices in compact form factors |
| QG | 44 nC (0–10 V) - Low gate drive energy reduces driver IC loading and enables efficient 1–2 MHz operation |
| RthJC | 1.8 K/W - Enables >70 W power dissipation with modest heatsinking; validated on 6 cm² PCB copper area |
| QOSS | 25 nC - Minimizes turn-off energy loss and improves light-load efficiency in high-frequency SMPS |
| VGS(th) | 1.2–2.0 V - Ensures robust turn-on with standard 3.3 V or 5 V logic-level gate drivers |
Pinout & Package
TSDSON-8 FL (Thin Small Outline No-Lead, Flat Lead) package with exposed drain pad on bottom side for optimal thermal transfer. 5 mm × 6 mm footprint, 0.8 mm height, lead-free and halogen-free per IEC61249-2-21.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain) | Drain (common connection) | All pins 1–7 and pin 8 are internally connected to the drain terminal; pin 8 is the exposed thermal pad - must be soldered to PCB ground plane for thermal and electrical integrity |
| 1 (Source) | Source | Pin 1 is source terminal - used for low-side sensing and gate driver return path |
| 4 (Gate) | Gate | Pin 4 is gate input - requires low-inductance layout due to fast switching (tr = 6.8 ns, tf = 4.6 ns) |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) × QG FOM | Enables >95% efficiency in 1 MHz+ buck converters by minimizing combined conduction and switching losses |
| Optimized for synchronous buck topologies | Low QGD/QG ratio (6.5/44 ≈ 15%) reduces Miller-induced shoot-through risk during high-dV/dt transitions |
| Enhanced thermal resistance (RthJC = 1.8 K/W) | Allows direct mounting to heatsink or large copper pour - supports 40 A continuous operation without forced air |
| JEDEC-qualified reliability | Validated per JESD47 stress testing - suitable for mission-critical server and telecom power supplies |
| Halogen-free & RoHS-compliant | Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) - no bake required before reflow |
Applications
| Server VRM Power Stage | GPU Voltage Regulator Module |
|---|---|
|
Use Scenario: Primary-side high-side switch in multiphase buck converter supplying 0.8–1.2 V @ up to 600 A to modern CPUs. IC Role / Device Role / Timing Role: High-side N-channel MOSFET operating at 500 kHz–1 MHz with synchronous rectification. Use Value: 1.9 mΩ RDS(on) minimizes I²R loss under heavy load; low QOSS preserves efficiency at light loads. |
Use Scenario: Dual-phase 12 V input → 0.9 V output converter for discrete graphics cards requiring rapid transient response. IC Role / Device Role / Timing Role: Low-side synchronous rectifier with fast body diode recovery (QRR = 20 nC). Use Value: 0.8 V VSD and low RDS(on) reduce conduction loss in high-current, low-voltage output stage. |
| Industrial DC-DC Converter | Telecom Base Station PSU |
|
Use Scenario: 24 V input → 5 V/12 V isolated or non-isolated converter in programmable logic controller (PLC) power modules. IC Role / Device Role / Timing Role: Main switch in active clamp forward or LLC resonant topology secondary-side synchronous rectifier. Use Value: 150 °C Tjmax and JEDEC qualification ensure long-term reliability in unventilated enclosures. |
Use Scenario: High-density 48 V bus → 12 V intermediate bus converter in macro-cell base station power shelves. IC Role / Device Role / Timing Role: High-frequency (800 kHz) buck switch with tight thermal budget and high power density requirement. Use Value: RthJC = 1.8 K/W enables >60 W dissipation on standard 2-layer PCB - eliminates need for external heatsinks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF8721TRPBF | RDS(on) = 2.7 mΩ @ 4.5 V; QG = 14 nC; SO-8 package; RthJC = 3.5 K/W | Higher conduction loss and thermal resistance - suitable only for lower-current (<25 A), lower-frequency (<300 kHz) designs | Select when cost sensitivity outweighs efficiency and thermal performance; not recommended for server VRMs |
| BSC014N04LS6 | RDS(on) = 1.4 mΩ @ 4.5 V; QG = 47 nC; TSDSON-8; RthJC = 1.7 K/W | Lower RDS(on) but higher QG - better for low-frequency, high-current apps; slightly better thermal performance | Prefer for 300–600 kHz applications where conduction loss dominates; verify gate driver capability for 47 nC load |
Compared with IRF8721TRPBF and BSC014N04LS6, ISZ019N03L5SATMA1 delivers the best balance of ultra-low RDS(on), moderate QG, and industry-leading thermal resistance - making it optimal for high-frequency, high-current server and GPU power delivery where both efficiency and thermal headroom are constrained.
Availability
ISZ019N03L5SATMA1 is available at Aetrix Electronics and suitable for server VRMs, GPU voltage regulator modules, industrial DC-DC converters, and telecom base station power supplies requiring stable component supply and long-lifecycle support.
Supply support for ISZ019N03L5SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
This device belongs to Infineon's OptiMOSTM 5 family - engineered specifically for high-efficiency, high-frequency DC-DC conversion in data center, AI accelerator, and 5G infrastructure applications.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The ISZ019N03L5SATMA1 supports 40 A continuous drain current at TC = 25 °C, derating to 22 A at TC = 100 °C per the datasheet's maximum ratings table. This derating reflects thermal limits under typical PCB cooling conditions with 6 cm² copper area.
Is this MOSFET suitable for 3.3 V gate drive applications?
Yes - with a gate threshold voltage range of 1.2–2.0 V and guaranteed RDS(on) ≤ 2.0 mΩ at VGS = 4.5 V, the device fully enhances using standard 3.3 V logic-level gate drivers when paired with appropriate gate resistor selection to manage dV/dt and ringing.
Does the TSDSON-8 FL package require solder paste stencil optimization?
Yes - the exposed drain pad (pin 8) must be fully soldered to a thermally robust PCB copper pour. Recommended stencil aperture is 100% open area with 0.12 mm thickness; solder voiding should be limited to <20% per IPC-7095B to maintain RthJC ≤ 1.8 K/W.
What is the safe operating area (SOA) limitation at 100 µs pulse width?
Per Figure 3 in the datasheet, the SOA at tp = 100 µs allows up to 100 A at VDS = 10 V and 40 A at VDS = 30 V, assuming TC = 25 °C and single-pulse conditions. This supports robust short-circuit withstand in VRM overcurrent protection schemes.
ISZ019N03L5SATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 22A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2800 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TSDSON-8-FL
ISZ019N03L5SATMA1 FAQ
1.How can I place an order for ISZ019N03L5SATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for ISZ019N03L5SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ISZ019N03L5SATMA1 reliable?
The price and inventory of ISZ019N03L5SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISZ019N03L5SATMA1 is usually 5 days.
3.What payment methods are accepted for ISZ019N03L5SATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISZ019N03L5SATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ISZ019N03L5SATMA1?
ISZ019N03L5SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ISZ019N03L5SATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ISZ019N03L5SATMA1?
For technical support, including ISZ019N03L5SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISZ019N03L5SATMA1 requirements.
6.How does Aetrix verify that ISZ019N03L5SATMA1 is sourced from the original manufacturer or authorized distributors?
All ISZ019N03L5SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISZ019N03L5SATMA1 meets industry standards.
7.What is the process for return or replacement of ISZ019N03L5SATMA1?
All ISZ019N03L5SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISZ019N03L5SATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ISZ019N03L5SATMA1 part is unused and in its original packaging.
Return procedure for ISZ019N03L5SATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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