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Infineon Technologies ISZ0602NLSATMA1

Part No.:
ISZ0602NLSATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixISZ0602NLSATMA1.pdf
Description:
MOSFET N-CH 80V 12A/64A TSDSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,817

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Product details

Overview

ISZ0602NLSATMA1 from Infineon Technologies is an N-channel logic-level OptiMOSTM5 power MOSFET with 80 V VDS, 7.8 mΩ RDS(on) at VGS = 10 V, 64 A continuous drain current, and PG-TSDSON-8 FL package optimized for high-frequency switching in USB PD chargers and synchronous rectification stages.

For engineers reviewing the ISZ0602NLSATMA1 datasheet, ISZ0602NLSATMA1 pinout, ISZ0602NLSATMA1 application, or ISZ0602NLSATMA1 equivalent, key selection criteria include low QG (11 nC), low QOSS (23 nC), superior thermal resistance (RthJC = 1.2 °C/W), integrated body diode performance, and logic-level gate drive compatibility down to 4.5 V.

Technical Context

This device implements a trench-based silicon MOSFET architecture with optimized charge distribution for reduced switching losses. Its gate threshold voltage (1.1–2.3 V) enables reliable turn-on with standard logic-level controllers, while its low Ciss (1400–1860 pF) and Crss (10–13 pF) support clean, fast transitions in hard-switched topologies.

The internal body diode is characterized for reverse recovery (trr = 30 ns, Qrr = 23 nC) and rated for 52 A continuous forward current, making it suitable for synchronous FET operation where diode conduction occurs during dead-time intervals.

Key Specifications

ParameterValue and Actual Design Meaning
VDS80 V - Maximum blocking voltage for 24–48 V input systems with safety margin
RDS(on), max7.8 mΩ at VGS = 10 V - Enables <1 W conduction loss at 40 A in compact charger PCBs
ID, cont64 A at TC = 25 °C - Supports high-current output stages without forced air cooling
QG11 nC (0–4.5 V) - Reduces gate driver power demand and enables >1 MHz switching
QOSS23 nC - Low output charge minimizes turn-off energy loss in hard-switched converters
RthJC1.2 °C/W - Enables efficient heat transfer to PCB copper via exposed drain pad
VGS(th)1.1–2.3 V - Ensures robust turn-on with 3.3 V or 5 V microcontroller GPIO or PWM drivers

Pinout & Package

PG-TSDSON-8 FL is a thermally enhanced leadless surface-mount package with an exposed drain pad on the bottom side for direct PCB thermal coupling. Pins 5–8 are internally connected to the drain, Pin 4 is the gate, and Pins 1–3 are the source terminals.

Pin/TerminalCircuit RoleDesign Meaning
Pins 1–3SourceLow-impedance return path for load current; tied to ground plane for EMI control
Pin 4GateControl terminal requiring <11 nC charge for full enhancement; sensitive to layout parasitics
Pins 5–8 + Exposed PadDrainMain power path terminal; electrically and thermally connected to PCB copper pour

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced at VGS ≥ 4.5 V, compatible with 3.3 V/5 V controllers without level-shifting
100% avalanche testedGuarantees ruggedness against inductive switching stress up to 61 mJ single-pulse energy
Superior thermal resistanceRthJC = 1.2 °C/W enables >50 W dissipation with minimal junction-to-case ΔT
Optimized for high-frequency switchingLow QG/QOSS ratio (0.48) reduces switching loss trade-offs in 300 kHz–1 MHz SMPS designs
Halogen-free & RoHS compliantMeets IEC61249-2-21 and JEDEC J-STD-020 reflow requirements for industrial and consumer production

Applications

USB-C Power Delivery ChargerSynchronous Rectifier in LLC Resonant Converter

Use Scenario: 65 W–100 W compact wall adapter with dual active-clamp or flyback topology.

IC Role / Device Role: Primary-side high-side switch or secondary-side synchronous rectifier FET.

Use Value: 7.8 mΩ RDS(on) and 11 nC QG reduce total power loss by >15% vs. legacy 12 V gate MOSFETs at 400 kHz.

Use Scenario: Secondary-side rectification in 300–500 kHz LLC converter for server PSUs or telecom bricks.

IC Role / Device Role: Synchronous rectifier replacing Schottky diode to improve efficiency at light-to-full load.

Use Value: Integrated body diode with 30 ns trr and 23 nC Qrr enables zero-voltage switching alignment and reduces reverse recovery loss.

High-Density DC-DC POL ModuleIndustrial 24 V Input Motor Driver Half-Bridge

Use Scenario: 12 V or 5 V point-of-load regulator with >40 A output in <1 cm² footprint.

IC Role / Device Role: High-side or low-side switch in buck converter stage.

Use Value: PG-TSDSON-8 FL package delivers 64 A current capacity with 1.2 °C/W thermal resistance, enabling passive-cooled designs.

Use Scenario: H-bridge driver for 24 V BLDC motor control in factory automation equipment.

IC Role / Device Role: Low-side switch in half-bridge configuration with gate driven by isolated PWM controller.

Use Value: Logic-level VGS(th) ensures reliable turn-on with 3.3 V MCU outputs; 100% avalanche rating protects against inductive kickback.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB060N10N5ATMA1100 V VDS, 6.0 mΩ RDS(on), same PG-TSDSON-8 FL package, higher voltage ratingBetter suited for 48 V bus systems; slightly higher QG (14 nC) increases gate drive lossSelect when system requires >80 V blocking margin or operates above 60 V nominal input
IRFH7103TRPBF30 V VDS, 3.2 mΩ RDS(on), PQFN 5×6 mm, lower voltage but lower RDS(on)Optimized for ≤12 V loads; not rated for 80 V transients or 24 V+ input railsChoose only for low-voltage, ultra-high-current POL applications where VDS margin is not required

Compared with IPB060N10N5ATMA1 and IRFH7103TRPBF, ISZ0602NLSATMA1 provides optimal balance of 80 V rating, 7.8 mΩ conduction loss, and 11 nC gate charge for 24–48 V USB PD and industrial SMPS-neither over-specified nor under-rated for mid-range voltage switching.

Availability

ISZ0602NLSATMA1 is available at Aetrix Electronics and suitable for USB-C power delivery chargers, synchronous rectifiers in resonant converters, and high-density DC-DC POL modules requiring stable component supply and qualified automotive-grade reliability.

Supply support for ISZ0602NLSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification standards aligned to AEC-Q101 and JEDEC.

This part belongs to the OptiMOSTM5 family-designed specifically for high-efficiency, high-frequency power conversion in space-constrained chargers, adapters, and server power supplies where thermal performance and gate drive simplicity are critical.

FAQ

What is the maximum recommended gate resistor value for ISZ0602NLSATMA1 in a 500 kHz flyback design?

A 3 Ω external gate resistor is validated in the datasheet for 5.6 ns turn-on delay and 4.8 ns fall time at 20 A. For 500 kHz operation, values between 2.2 Ω and 4.7 Ω maintain safe dV/dt control while limiting gate driver loss; higher values increase switching loss and risk shoot-through in half-bridge configurations.

Does ISZ0602NLSATMA1 support paralleling for higher current applications?

Yes-its positive temperature coefficient for RDS(on) (verified in Diagram 9) ensures inherent current sharing when multiple units are paralleled. Layout must match source inductance and thermal paths; derating to 55 A per device is recommended for sustained 100 A designs with forced airflow.

Can ISZ0602NLSATMA1 be used as a high-side switch with bootstrap gate drive?

Yes-it supports high-side configuration with standard bootstrap circuits. The 20 V VGS rating and 1.2 °C/W RthJC allow reliable operation at VGS = 12 V; however, minimum bootstrap capacitor size must be calculated using QG = 11 nC and expected dead time to avoid gate voltage droop below 4.5 V.

Is the internal body diode suitable for continuous freewheeling in a buck converter?

Yes-the diode is rated for 52 A continuous forward current at TC = 25 °C and characterized with 0.87 V typical VSD at 20 A. For continuous freewheeling, ensure case temperature remains ≤100 °C and use synchronous rectification control to minimize reverse recovery loss during commutation.

ISZ0602NLSATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™ 5
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
12A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.3V @ 29µA
Gate Charge (Qg) (Max) @ Vgs:
29 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1860 pF @ 40 V
FET Feature:
-
Power Dissipation (Max):
2.1W (Ta), 60W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TSDSON-8-26

ISZ0602NLSATMA1 FAQ

1.How can I place an order for ISZ0602NLSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISZ0602NLSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISZ0602NLSATMA1 reliable?

The price and inventory of ISZ0602NLSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISZ0602NLSATMA1 is usually 5 days.

3.What payment methods are accepted for ISZ0602NLSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISZ0602NLSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISZ0602NLSATMA1?

ISZ0602NLSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISZ0602NLSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISZ0602NLSATMA1?

For technical support, including ISZ0602NLSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISZ0602NLSATMA1 requirements.

6.How does Aetrix verify that ISZ0602NLSATMA1 is sourced from the original manufacturer or authorized distributors?

All ISZ0602NLSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISZ0602NLSATMA1 meets industry standards.

7.What is the process for return or replacement of ISZ0602NLSATMA1?

All ISZ0602NLSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISZ0602NLSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISZ0602NLSATMA1 part is unused and in its original packaging.

Return procedure for ISZ0602NLSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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