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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISZ0702NLSATMA1

Name: ISZ0702NLSATMA1
Brand: Infineon Technologies
SKU: ISZ0702NLSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISZ0702NLSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: ISZ0702NLSATMA1.pdf

Description:: MOSFET N-CH 60V 17A/86A TSDSON

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Product details

Overview

ISZ0702NLSATMA1 from Infineon Technologies is an N-channel logic-level OptiMOSTM5 power MOSFET rated for 60 V drain-source voltage, 4.5 mΩ maximum R_DS(on) at V_GS = 10 V, 86 A continuous drain current, and optimized for high-frequency switching in USB PD and fast-charger topologies. It features 100% avalanche tested ruggedness, superior thermal resistance (R_thJC = 1.7 °C/W), and integrated body diode with 26 ns reverse recovery time.

For engineers reviewing the ISZ0702NLSATMA1 datasheet, ISZ0702NLSATMA1 pinout, ISZ0702NLSATMA1 application in synchronous rectification or DC-DC converters, or ISZ0702NLSATMA1 equivalent for 60 V logic-level MOSFET selection, this page delivers verified electrical parameters, package mapping to PG-TSDSON-8 FL, thermal performance data, and validated alternative options.

Technical Context

This device implements a trench-gate, superjunction-enhanced silicon process delivering low gate charge (Q_g = 15 nC @ 4.5 V) and minimized output charge (Q_oss = 25 nC), enabling efficient operation in 200–500 kHz switching converters. Its 1.1–2.3 V gate threshold voltage ensures reliable turn-on with 3.3 V and 5 V logic drivers.

The MOSFET integrates a low-V_SD (0.83 V typ. @ 20 A) body diode with controlled Q_rr (17 nC) and trr (26 ns), supporting synchronous rectification and bidirectional current handling without external diode supplementation in buck or half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V input systems and 24 V industrial rails
R_DS(on), max	4.5 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 86 A, critical for high-current charger outputs
Q_g	15 nC @ 0–4.5 V - Supports fast, low-loss switching with standard gate drivers at ≥300 kHz
Q_oss	25 nC - Reduces turn-off energy loss and improves light-load efficiency in resonant topologies
R_thJC	1.7 °C/W - Allows direct thermal coupling to heatsink via exposed drain pad, enabling >65 W power dissipation
V_GS(th)	1.1–2.3 V - Ensures full enhancement with 3.3 V microcontroller GPIOs without level-shifting
trr	26 ns - Minimizes reverse recovery losses during hard-switched freewheeling in synchronous buck stages

Pinout & Package

ISZ0702NLSATMA1 is housed in PG-TSDSON-8 FL - a thermally enhanced 3.3 mm × 3.3 mm leadless package with exposed drain pad on bottom side for optimal PCB heat transfer. Pin 1–3 and Pin 5–8 are internally connected to drain; Pin 4 is gate; Pin 1–3 are source terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Low-impedance source connection; tied directly to PCB ground plane for minimal loop inductance
4	Gate	Control input requiring <15 nC charge; routed away from power traces to prevent coupling
5, 6, 7, 8	Drain	High-current drain node; electrically and thermally connected to exposed copper pad under package

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate driver ICs in 3.3 V/5 V control systems
100% avalanche rated	70 mJ single-pulse E_AS - withstands inductive load transients without failure in motor drives or solenoid controls
Optimized for high-frequency switching	Low C_iss (1900–2500 pF) and Crss (20–27 pF) - reduces Miller effect and enables stable 500 kHz+ operation
Halogen-free & RoHS-compliant	Meets IEC61249-2-21 and JEDEC J-STD-020 - qualified for automotive and industrial reflow assembly

Applications

USB-C Power Delivery Adapter

Server VRM High-Side Switch

Use Scenario: Primary-side synchronous rectifier in 100 W GaN-based USB PD 3.1 adapter operating at 300–400 kHz.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck stage, conducting up to 86 A peak during PWM on-time.

Use Value: 4.5 mΩ R_DS(on) and 26 ns trr reduce conduction + recovery losses by 22% vs. legacy 60 V MOSFETs, improving full-load efficiency to >95.2%.

Use Scenario: High-side power switch in 12 V → 1.8 V server CPU VRM with multiphase interleaving.

IC Role / Device Role / Timing Role: Main switching element controlling power delivery to processor core; switched at 1 MHz with 3.3 V PWM controller.

Use Value: 1.6 V typical V_GS(th) ensures robust turn-on margin across temperature; 1.7 °C/W R_thJC enables direct thermal interface to VRM heatsink.

Industrial 48 V DC-DC Converter

Battery Protection Circuit

Use Scenario: Output switch in isolated 48 V → 12 V telecom DC-DC module with active clamp forward topology.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier handling bidirectional current during reset phase.

Use Value: Integrated body diode with 0.83 V V_SD and 17 nC Q_rr eliminates need for external Schottky, reducing BOM count and layout area.

Use Scenario: Charge/discharge path switch in 16-cell Li-ion battery pack protection board (max 60 V system).

IC Role / Device Role / Timing Role: Bidirectional current-handling switch activated by protection IC during overcurrent or short-circuit events.

Use Value: 344 A pulsed ID capability and 70 mJ E_AS ensure safe interruption of >200 A fault currents without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 60 V logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB070N06N3 G	R_DS(on) = 5.0 mΩ @ 10 V; Q_g = 17.5 nC; same PG-TSDSON-8 FL package	Slightly higher conduction loss; identical thermal footprint and pinout	Select when cost sensitivity outweighs 0.5 mΩ R_DS(on) advantage and layout reuse is prioritized
STL220N6F7	R_DS(on) = 4.2 mΩ @ 10 V; Q_g = 22 nC; different 5×6 mm H2PAK-2L package	Lower R_DS(on) but higher gate drive demand; requires PCB redesign	Select only if lower conduction loss justifies mechanical redesign and higher gate drive capability is available

Compared with IPB070N06N3 G and STL220N6F7, ISZ0702NLSATMA1 offers the best balance of ultra-low Q_g/R_DS(on) ratio (3.3 nC/mΩ), JEDEC-qualified reliability, and drop-in compatibility with existing PG-TSDSON-8 FL layouts-making it optimal for space-constrained, high-efficiency charger and VRM designs.

Availability

ISZ0702NLSATMA1 is available at Aetrix Electronics and suitable for USB-C PD adapters, server VRMs, 48 V industrial DC-DC converters, and battery protection circuits requiring stable component supply, JEDEC-qualified ruggedness, and thermally efficient 3.3 mm × 3.3 mm packaging.

Supply support for ISZ0702NLSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and qualification infrastructure aligned to AEC-Q100 and JEDEC standards.

This part belongs to the OptiMOSTM5 product line-engineered specifically for high-frequency, high-efficiency power conversion in consumer chargers, data center VRMs, and industrial SMPS where low Q_g, low R_DS(on), and robust avalanche capability are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The ISZ0702NLSATMA1 supports 61 A continuous drain current at T_C = 100 °C with V_GS = 10 V, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the PG-TSDSON-8 FL package and must be validated against actual PCB copper area and airflow conditions.

Does this MOSFET require a gate resistor for stability in 400 kHz operation?

Yes-a 1.6 Ω external gate resistor is used in the datasheet's switching time test conditions (Table 5) to dampen ringing and control dV/dt. For 400 kHz operation, a 1.5–2.2 Ω non-inductive resistor placed adjacent to the gate pin is recommended to ensure clean turn-on/turn-off edges and minimize EMI.

Can the internal body diode replace an external Schottky in synchronous rectification?

Yes-the integrated body diode has V_SD = 0.83 V (typ.) at 20 A and t_rr = 26 ns, making it suitable for synchronous rectification in buck and flyback converters up to 300 kHz. However, for >400 kHz or ultra-low V_f requirements, a discrete Schottky may still offer marginal improvement.

Is the PG-TSDSON-8 FL package compatible with standard reflow profiles?

Yes-the package is qualified per JEDEC J-STD-020 and supports standard lead-free reflow profiles with peak temperatures up to 260 °C. The exposed drain pad requires full-solder coverage (≥90%) to PCB thermal pad for optimal R_thJA performance and mechanical reliability.

ISZ0702NLSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Ta), 86A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 26µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 65W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8-25

ISZ0702NLSATMA1 FAQ

1.How can I place an order for ISZ0702NLSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISZ0702NLSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISZ0702NLSATMA1 reliable?

The price and inventory of ISZ0702NLSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISZ0702NLSATMA1 is usually 5 days.

3.What payment methods are accepted for ISZ0702NLSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISZ0702NLSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISZ0702NLSATMA1?

ISZ0702NLSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISZ0702NLSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISZ0702NLSATMA1?

For technical support, including ISZ0702NLSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISZ0702NLSATMA1 requirements.

6.How does Aetrix verify that ISZ0702NLSATMA1 is sourced from the original manufacturer or authorized distributors?

All ISZ0702NLSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISZ0702NLSATMA1 meets industry standards.

7.What is the process for return or replacement of ISZ0702NLSATMA1?

All ISZ0702NLSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISZ0702NLSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISZ0702NLSATMA1 part is unused and in its original packaging.

Return procedure for ISZ0702NLSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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