Infineon Technologies ISZ0703NLSATMA1

Overview

ISZ0703NLSATMA1 from Infineon Technologies is an N-channel logic-level MOSFET in PG-TSDSON-8 FL package, rated for 60 V V_DS, 7.3 mΩ R_DS(on) at V_GS = 10 V, and 56 A continuous drain current at T_C = 25 °C. It features 15 nC Q_oss, 8.7 nC Q_G(0–4.5 V), and is optimized for high-frequency switching in USB PD and fast-charger topologies.

For engineers reviewing the ISZ0703NLSATMA1 datasheet, ISZ0703NLSATMA1 pinout, ISZ0703NLSATMA1 application, or ISZ0703NLSATMA1 equivalent, key selection criteria include its low gate charge profile, 100% avalanche-tested ruggedness, thermal resistance (R_thJC = 2.5 °C/W), integrated body diode with 21 ns t_rr, and suitability for synchronous rectification in DC-DC converters.

Technical Context

This OptiMOSTM5 device uses a trench-gate superjunction structure enabling low R_DS(on) × Q_G figure-of-merit (4.9 mΩ·nC) and fast switching with t_d(on) = 6.6 ns and t_f = 2.5 ns under 4.5 V drive. Its gate threshold voltage (1.1–2.3 V) ensures reliable turn-on with standard logic-level controllers.

The MOSFET integrates a robust body diode with 0.86 V forward voltage at 20 A and 12 nC Q_rr, supporting high-efficiency synchronous FET operation in buck and half-bridge configurations. Thermal design is enabled by bottom-side cooling via exposed drain pad (pins 5–8) and R_thJC = 2.5 °C/W to case.

Key Specifications

Pinout & Package

PG-TSDSON-8 FL is a thermally enhanced leadless package with exposed drain pad on bottom side (pins 5–8). Gate (pin 4) and source (pins 1–3) are top-side terminals; internal body diode anode connects to source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IPB070N06N3 G and STL220N6F7, ISZ0703NLSATMA1 offers the lowest Q_G/R_DS(on) ratio (1.19 nC/mΩ) among 60 V logic-level MOSFETs in PG-TSDSON-8, making it optimal for high-frequency, gate-loss-sensitive applications like USB PD 3.1 adapters.

Availability

ISZ0703NLSATMA1 is available at Aetrix Electronics and suitable for USB-C power delivery adapters, server VRMs, laptop fast-charging modules, and industrial PoE++ PSE controllers requiring stable component supply and qualified standard-grade reliability.

Supply support for ISZ0703NLSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOSTM5 family-designed specifically for high-efficiency, high-frequency power conversion in consumer chargers, server power supplies, and industrial SMPS where low gate charge and rugged avalanche capability are critical.

FAQ

What is the maximum junction temperature and how is it validated?

The ISZ0703NLSATMA1 has a maximum junction temperature of 175 °C, validated per JEDEC Standard JESD22-A108. This rating is confirmed through accelerated life testing and thermal cycling across 1000 cycles between −55 °C and +175 °C, with electrical parameters verified post-test per datasheet limits.

Can this MOSFET be used in synchronous rectification without external gate driving circuitry?

Yes-it supports self-driven synchronous rectification in flyback and LLC converters when the source is referenced to secondary ground and gate is driven by transformer-coupled or capacitive-coupled signals. Its 1.1–2.3 V V_GS(th) and low Q_G allow reliable turn-on with minimal auxiliary winding voltage.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD = 0.86 V at 20 A and t_rr = 21 ns, outperforming typical 60 V Schottky diodes (V_F ≈ 0.55 V but t_rr undefined and leakage >100 µA at 125 °C). While forward drop is higher, its controlled recovery and co-packaged thermal path eliminate parasitic inductance and simplify layout.

Is the PG-TSDSON-8 FL package compatible with standard reflow profiles?

Yes-the package complies with IPC/JEDEC J-STD-020D moisture sensitivity level 1 and supports standard lead-free reflow profiles (peak 260 °C, 20–40 sec above 217 °C). The exposed drain pad requires full-solder coverage to achieve specified R_thJC; stencil aperture should be ≥85% open area for optimal thermal transfer.