Infineon Technologies ISZ24DP10LMATMA1

Overview

ISZ24DP10LMATMA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET rated for -100 V drain-source voltage, 245 mΩ max R_DS(on) at V_GS = -4.5 V, -10.3 A continuous drain current, and fully qualified for industrial applications per JEDEC. It integrates an internal body diode and uses PG-TSDSON-8 FL package with exposed drain pads (pins 5–8) for thermal performance in high-side load switching.

For engineers reviewing the ISZ24DP10LMATMA1 datasheet, ISZ24DP10LMATMA1 pinout, ISZ24DP10LMATMA1 application, or ISZ24DP10LMATMA1 equivalent, key selection criteria include logic-level gate drive compatibility (-4.5 V threshold), avalanche ruggedness (221 mJ single-pulse E_AS), thermal resistance (R_thJC = 2.4 °C/W), and RoHS/halogen-free compliance.

Technical Context

This MOSFET operates in enhancement mode with a gate threshold voltage of -1.0 to -2.0 V (V_GS(th)), enabling direct interface with 3.3 V/5 V logic controllers. Its low gate charge (Q_g = 14.9–18.6 nC @ -4.5 V) supports efficient high-frequency switching up to several hundred kHz in DC-DC and motor control stages.

The device features integrated body diode with reverse recovery time (t_rr) of 61–122 ns and Q_rr of 167–334 nC, supporting synchronous rectification and flyback snubbing. Thermal design leverages the PG-TSDSON-8 FL's exposed drain pad (pins 5–8) for low-junction-to-case resistance (2.4 °C/W).

Key Specifications

Pinout & Package

PG-TSDSON-8 FL is a leadless, surface-mount package with exposed drain pad on the bottom side (pins 5–8). The top-side terminals are arranged in two rows (1–4 and 5–8), with pins 1–3 as source, pin 4 as gate, and pins 5–8 as drain (internally connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with IPD95R1K2P7 and IRF9530NPBF, ISZ24DP10LMATMA1 offers superior logic-level compatibility, lower R_DS(on), smaller footprint, and verified industrial qualification - making it optimal for space-constrained, high-reliability DC load switching.

Availability

ISZ24DP10LMATMA1 is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, programmable power supplies, and PLC output modules requiring stable component supply across multi-year production cycles.

Supply support for ISZ24DP10LMATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to the OptiMOS™ P-channel power transistor product line, engineered specifically for high-efficiency, logic-level-driven DC load switching in industrial and automotive environments where thermal density and avalanche ruggedness are critical.

FAQ

What is the maximum safe operating temperature for ISZ24DP10LMATMA1?

The junction temperature must not exceed +175 °C under any condition, and storage temperature range is -55 to +175 °C. Derating begins at case temperatures above 25 °C per Figure 2 in the datasheet; at T_C = 100 °C, continuous drain current drops to -9.1 A with V_GS = -10 V.

Does ISZ24DP10LMATMA1 require a gate resistor for stability?

Yes - a series gate resistor (typically 1.6 Ω, as used in datasheet switching tests) is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 18–32 pF) and prevent spurious turn-on during fast dv/dt events in high-side configurations.

Can ISZ24DP10LMATMA1 be used in parallel with identical units?

Parallel operation is feasible due to positive temperature coefficient of R_DS(on) (see Diagram 9), which promotes current sharing. However, matched gate drive layout, symmetrical PCB traces, and individual gate resistors are mandatory to avoid oscillation or current imbalance.

Is the internal body diode suitable for continuous freewheeling conduction?

Yes - the integrated body diode supports -10.3 A continuous forward current (I_S) at T_C = 25 °C and has specified V_SD = -0.84 to -1.2 V at -8 A, making it appropriate for freewheeling in buck converters and H-bridge topologies when properly heatsinked.