Infineon Technologies ISZ56DP15LMATMA1

Overview

ISZ56DP15LMATMA1 from Infineon Technologies is a P-channel logic-level enhancement-mode MOSFET rated for -150 V drain-source voltage, 560 mΩ maximum R_DS(on) at -4.5 V gate drive, -6.7 A continuous drain current, and fully qualified for industrial applications per JEDEC standards. It integrates an internal body diode and is optimized for both high- and low-frequency switching in high-voltage DC power control circuits.

For engineers reviewing the ISZ56DP15LMATMA1 datasheet, ISZ56DP15LMATMA1 pinout, ISZ56DP15LMATMA1 application, or ISZ56DP15LMATMA1 equivalent, key selection criteria include its -4.5 V logic-level gate threshold, 100% avalanche-tested ruggedness, superior thermal resistance (R_thJC = 1.24 °C/W), RoHS- and halogen-free compliance, and PG-TSDSON-8 FL package with exposed drain pads for enhanced heat dissipation.

Technical Context

This MOSFET operates as a high-side or bidirectional switch in industrial power supplies, motor control H-bridges, and battery protection circuits where reverse polarity tolerance and robust avalanche capability are required. Its -1.5 V typical gate threshold (V_GS(th)) enables direct interfacing with 3.3 V/5 V microcontrollers without level-shifting.

The device features low Q_g (15.2 nC @ 0–4.5 V) and Q_oss (8.7 nC), supporting efficient hard-switching up to ~100 kHz. Its 1.24 °C/W junction-to-case thermal resistance and 6 cm² PCB copper requirement ensure stable operation under sustained -6.7 A loads at T_C = 100 °C.

Key Specifications

Pinout & Package

Package: PG-TSDSON-8 FL - Thermally enhanced leadless package with exposed drain pad (pins 5–8) on bottom side for direct PCB thermal coupling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Compared with STP16PF15 and IRF9540NPBF, ISZ56DP15LMATMA1 uniquely combines logic-level gate drive, industrial qualification, and 1.24 °C/W thermal resistance in a surface-mount package-enabling smaller, more reliable, and lower-system-cost high-voltage switching designs.

Availability

ISZ56DP15LMATMA1 is available at Aetrix Electronics and suitable for industrial DC power switching, high-side load protection, motor control H-bridges, and telecom power management requiring stable component supply across multi-year production cycles.

Supply support for ISZ56DP15LMATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's OptiMOS™ power transistor family, engineered specifically for high-efficiency, high-reliability industrial and automotive power conversion where ruggedness, thermal performance, and logic-level compatibility are essential.

FAQ

What is the maximum gate-source voltage rating for ISZ56DP15LMATMA1?

The absolute maximum gate-source voltage is ±20 V, with recommended operating range limited to -20 V to 0 V for P-channel enhancement mode operation. Exceeding -20 V risks permanent gate oxide damage. The device is characterized for stable performance at -10 V and -4.5 V gate drive, with -4.5 V sufficient for full enhancement due to its -1.5 V typical threshold voltage.

Can ISZ56DP15LMATMA1 be used in parallel configurations?

Yes, but with strict layout and biasing requirements: matched gate resistors (≤1 Ω), symmetrical PCB trace lengths, and individual source resistors (10–50 mΩ) for current balancing. Thermal coupling must be uniform across all paralleled units, and derating to 80% of total rated current is advised. The device's positive R_DS(on) temperature coefficient supports inherent current sharing.

Does ISZ56DP15LMATMA1 require a gate resistor, and what value is recommended?

A gate resistor is mandatory to control dV/dt and prevent oscillation. For standard 100 kHz PWM switching with a 3.3 V MCU driving through a buffer, a 1.6 Ω external resistor is validated in the datasheet for td(on)/tr/tf timing. Higher values (e.g., 10 Ω) reduce EMI but increase switching losses; lower values (<1 Ω) risk ringing and gate driver overstress.

Is the internal body diode suitable for continuous freewheeling in a buck converter?

Yes-the body diode is rated for -6.5 A continuous forward current at T_C = 25 °C and exhibits V_SD = -0.82 V at -5 A, making it viable for low-duty-cycle freewheeling. However, for high-frequency or high-current operation, synchronous rectification using a second MOSFET is preferred to minimize conduction loss and thermal stress on the body diode junction.