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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISZ75DP15LMATMA1

Name: ISZ75DP15LMATMA1
Brand: Infineon Technologies
SKU: ISZ75DP15LMATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISZ75DP15LMATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: ISZ75DP15LMATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Inventory:3,935

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Product details

Overview

ISZ75DP15LMATMA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET rated for -150 V drain-source voltage, 750 mΩ max R_DS(on) at V_GS = -4.5 V, -5.1 A continuous drain current, and fully qualified for industrial applications per JEDEC. It integrates an internal body diode and features logic-level gate drive compatibility with -4.5 V threshold.

For engineers reviewing the ISZ75DP15LMATMA1 datasheet, ISZ75DP15LMATMA1 pinout, ISZ75DP15LMATMA1 application, or ISZ75DP15LMATMA1 equivalent, key selection criteria include avalanche ruggedness (140 mJ single-pulse), thermal resistance (3 °C/W junction-to-case), gate charge profile (Q_g = 11.6–14.5 nC at -4.5 V), and PG-TSDSON-8 FL package layout with drain-connected pins 5–8.

Technical Context

This device operates as a high-voltage P-channel power switch in off-line and DC-DC converter topologies where reverse polarity control, load switching, or high-side configuration is required. Its -150 V V_DS rating supports operation across 100–120 VAC rectified rails and 48 V industrial bus systems.

The MOSFET employs Infineon's OptiMOSTM process to achieve low R_DS(on) while maintaining robust avalanche capability and tight V_GS(th) distribution (-1.0 to -2.0 V). Gate charge parameters (Q_gd = 6.1–9.2 nC, Q_sw = 7.4 nC) indicate optimized switching efficiency for medium-frequency PWM control up to 200 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-150 V - Supports isolation from 100–120 VAC mains after rectification without derating.
R_DS(on), max	750 mΩ @ V_GS = -4.5 V - Enables efficient low-power load switching with <150 mW conduction loss at -3.2 A.
I_D, cont	-5.1 A @ T_C = 25 °C - Sustains full-rated current with minimal heatsinking on 6 cm² PCB copper area.
E_AS	140 mJ - Withstands repetitive inductive turn-off stress in relay drivers and motor H-bridge snubbing.
Q_g	11.6–14.5 nC @ V_GS = -4.5 V - Matches standard gate drivers (e.g., TC442x, UCC2753x) without external buffering.
R_thJC	3 °C/W - Enables direct thermal coupling to metal-core PCBs or heatsinks for high-reliability industrial use.
V_GS(th)	-1.0 to -2.0 V - Ensures reliable turn-on with 3.3 V or 5 V logic-level controllers without level-shifting.

Pinout & Package

ISZ75DP15LMATMA1 uses the PG-TSDSON-8 FL package: thermally enhanced 8-pin leadless surface-mount device with exposed drain pad (pins 5–8) on bottom side, gate on pin 4, and source on pins 1–3.

Pin/Terminal	Circuit Role	Design Meaning
Pins 1–3	Source	Common return path for load current; electrically tied to internal substrate; requires low-impedance PCB routing.
Pin 4	Gate	Control input for channel activation; sensitive to ESD; requires RC snubber for fast switching.
Pins 5–8	Drain	Main high-voltage power terminal; connected to exposed thermal pad; must be soldered to large copper pour for heat dissipation.

Key Features

Feature	Design Value
P-Channel Logic-Level Operation	Guaranteed turn-on with 3.3 V/5 V microcontroller GPIOs due to -1.5 V typical V_GS(th).
100% Avalanche Tested	Each unit validated to withstand 140 mJ single-pulse energy-critical for unclamped inductive loads.
Enhancement Mode	Normally-off behavior ensures fail-safe operation during power-up, reset, or controller fault conditions.
Pb-Free & Halogen-Free	Complies with RoHS Directive 2011/65/EU and IEC61249-2-21-suitable for automotive-qualified industrial assemblies.
Thermally Optimized Package	PG-TSDSON-8 FL delivers 3 °C/W R_thJC, enabling >80% higher power density than SO-8 equivalents.

Applications

Industrial Power Supply ORing

High-Side Load Switch

Use Scenario: Dual-input redundant 48 V DC power system where one supply is actively delivering current while the other remains standby until failure detection.

IC Role / Device Role / Timing Role: P-channel MOSFET used as ideal diode replacement in ORing configuration, controlled by dedicated ORing controller (e.g., LTC4357).

Use Value: Eliminates 0.4–0.8 V forward drop of Schottky diodes, reducing thermal load by >60% and improving system efficiency at 3–5 A output.

Use Scenario: Controlled enable/disable of downstream subsystems (e.g., sensor array, communication module) in programmable logic controller (PLC) backplane.

IC Role / Device Role / Timing Role: High-side switch isolating 24–48 V loads from main rail; driven directly by 3.3 V FPGA I/O or ARM GPIO via simple level-shifter-free interface.

Use Value: Achieves <10 µA quiescent current in OFF state and <750 mΩ ON resistance-minimizing voltage droop and self-heating during sustained 4 A operation.

DC-DC Converter Synchronous Rectifier

Motor Driver High-Side Switch

Use Scenario: Secondary-side synchronous rectification in isolated flyback or forward converters operating at 100–200 kHz switching frequency.

IC Role / Device Role / Timing Role: P-channel MOSFET replacing output rectifier diode; driven by transformer-coupled or active gate driver synchronized to primary switch timing.

Use Value: Reduces conduction losses by 40–50% vs. 100 V Schottky, enabling >92% peak efficiency at 12 V/3 A output with no forced airflow.

Use Scenario: Half-bridge high-side switch in brushed DC motor driver for industrial actuators requiring bidirectional control and regenerative braking.

IC Role / Device Role / Timing Role: High-voltage P-channel switch handling 150 V bus transients during inductive kickback; paired with N-channel low-side switch and bootstrap gate driver.

Use Value: Withstands 140 mJ avalanche energy during freewheeling phase-enabling elimination of external clamping diodes and reducing BOM count by 2–3 components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR9024NTRPBF	R_DS(on) = 220 mΩ @ V_GS = -10 V only; not logic-level; V_GS(th) = -2 to -4 V; TO-220FP package.	Requires -10 V gate drive; unsuitable for 3.3 V MCU direct drive; larger footprint and higher R_thJA.	Select only when gate drive voltage ≥ -10 V is available and thermal budget allows TO-220 mounting.
STP16PF15	R_DS(on) = 180 mΩ @ V_GS = -10 V; V_GS(th) = -2 to -4 V; TO-220 package; no avalanche rating specified.	Lacks JEDEC industrial qualification and guaranteed E_AS; incompatible with logic-level control; higher thermal resistance.	Use only in cost-sensitive non-industrial designs where avalanche immunity is not required.

Compared with IRFR9024NTRPBF and STP16PF15, ISZ75DP15LMATMA1 uniquely combines logic-level gate drive, industrial qualification, 140 mJ avalanche rating, and thermally superior PG-TSDSON-8 FL packaging-making it the only option suitable for compact, high-reliability 3.3 V-controlled industrial power switches.

Availability

ISZ75DP15LMATMA1 is available at Aetrix Electronics and suitable for industrial power supply ORing, high-side load switching, DC-DC synchronous rectification, and motor driver high-side switching requiring stable component supply and long-term lifecycle support.

Supply support for ISZ75DP15LMATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's OptiMOSTM family-engineered specifically for high-efficiency, high-reliability power switching in industrial and infrastructure applications where voltage ruggedness, thermal performance, and long-term stability are critical.

FAQ

What is the maximum safe operating temperature for ISZ75DP15LMATMA1?

The device is rated for junction temperature up to 175 °C and storage temperature from -55 °C to +175 °C per IEC climatic category 55/175/56. Continuous operation at T_j = 150 °C is permissible with appropriate derating of I_D and P_tot per Diagrams 1 and 2 in the datasheet, assuming R_thJC = 3 °C/W and adequate PCB copper area.

Does ISZ75DP15LMATMA1 require a gate resistor for EMI suppression?

Yes-a series gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 10–18 pF) and parasitic inductance. This reduces electromagnetic emissions during switching transitions and prevents false triggering due to dv/dt coupling, especially in high-noise industrial environments.

Can ISZ75DP15LMATMA1 be used in parallel configurations?

Parallel operation is feasible but requires careful layout: matched gate drive paths, symmetrical source/drain routing, and thermal coupling via shared copper pour. The device's positive R_DS(on) temperature coefficient (Diagram 9) promotes current sharing, but gate threshold variation (-1.0 to -2.0 V) necessitates individual gate resistors to avoid imbalance above 2 A per device.

Is the internal body diode suitable for continuous freewheeling current?

Yes-the integrated body diode supports continuous forward current up to -5.1 A at T_C = 25 °C (Table 7) and exhibits V_SD = -0.82 to -1.2 V at -4 A. Its reverse recovery charge (Q_rr = 170–340 nC) and time (t_rr = 56.5–113 ns) are characterized for use in hard-switched freewheeling paths, though synchronous rectification yields lower losses.

ISZ75DP15LMATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

ISZ75DP15LMATMA1 FAQ

1.How can I place an order for ISZ75DP15LMATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISZ75DP15LMATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISZ75DP15LMATMA1 reliable?

The price and inventory of ISZ75DP15LMATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISZ75DP15LMATMA1 is usually 5 days.

3.What payment methods are accepted for ISZ75DP15LMATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISZ75DP15LMATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISZ75DP15LMATMA1?

ISZ75DP15LMATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISZ75DP15LMATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISZ75DP15LMATMA1?

For technical support, including ISZ75DP15LMATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISZ75DP15LMATMA1 requirements.

6.How does Aetrix verify that ISZ75DP15LMATMA1 is sourced from the original manufacturer or authorized distributors?

All ISZ75DP15LMATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISZ75DP15LMATMA1 meets industry standards.

7.What is the process for return or replacement of ISZ75DP15LMATMA1?

All ISZ75DP15LMATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISZ75DP15LMATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISZ75DP15LMATMA1 part is unused and in its original packaging.

Return procedure for ISZ75DP15LMATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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