Infineon Technologies ITD50N04S4L07ATMA1

Overview

ITD50N04S4L07ATMA1 from Infineon Technologies is a dual N-channel logic-level enhancement-mode MOSFET in PG-TO252-5 package, rated for 40 V V_DS, 7.2 mΩ R_DS(on) at V_GS = 10 V and I_D = 50 A, with 100% avalanche tested ruggedness and AEC-Q101 qualification for automotive power switching applications.

For engineers reviewing the ITD50N04S4L07ATMA1 datasheet, ITD50N04S4L07ATMA1 pinout, ITD50N04S4L07ATMA1 application, or ITD50N04S4L07ATMA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.2 V), low R_DS(on) at 4.5 V (9.0–10.6 mΩ), thermal resistance R_thJC = 3.2 K/W, and integrated body diode with t_rr = 34 ns and Q_rr = 29 nC.

Technical Context

This dual common-drain MOSFET integrates two matched N-channel silicon devices on a single die, enabling synchronous half-bridge or dual-switch configurations without external pairing. Its logic-level gate threshold (1.2–2.2 V) ensures full enhancement with 3.3 V or 5 V microcontroller outputs, while the 175 °C maximum junction temperature supports under-hood automotive environments.

The device features optimized dynamic parameters including C_iss = 1911–2480 pF, C_rss = 16–37 pF, and gate charge Q_g = 25–33 nC, supporting high-frequency PWM operation up to several hundred kHz. Avalanche energy rating of 45 mJ (I_D = 25 A) and 100% production-tested unclamped inductive switching ensure robustness in motor control and load dump scenarios.

Key Specifications

Pinout & Package

ITD50N04S4L07ATMA1 uses the PG-TO252-5 (also known as TO-252-5 or DPAK-5) surface-mount package with an exposed drain pad for thermal and electrical connection. The package has five terminals arranged in a single-row configuration with pin 1–5 labeled per Infineon marking "4T04L07".

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel logic-level MOSFET applications.

Compared with IPD50N04S4L07ATMA1 and STP55NF04L, ITD50N04S4L07ATMA1 delivers integrated dual-channel operation with automotive-grade reliability and lower gate charge-reducing drive complexity and improving system-level efficiency in BCM and EPS designs.

Availability

ITD50N04S4L07ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, electric power steering systems, LED headlamp drivers, and 12 V DC-DC converters requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.

Supply support for ITD50N04S4L07ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOSTM-T2 power transistor family, engineered specifically for high-efficiency, high-reliability automotive power switching in 12 V and 24 V systems where logic-level drive, thermal robustness, and AEC qualification are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The ITD50N04S4L07ATMA1 supports 42 A continuous drain current at T_C = 100 °C and V_GS = 10 V. This rating is limited by bondwire capacity and thermal resistance (R_thJC = 3.2 K/W); operation above this current requires active cooling or derating per the SOA curves on page 4 of the datasheet.

Is this device suitable for synchronous rectification in a 12 V output DC-DC converter?

Yes. With R_DS(on) = 9.0 mΩ at V_GS = 4.5 V and Q_rr = 29 nC, it reduces conduction and reverse recovery losses versus Schottky diodes. Its dual-channel structure allows independent control of both secondary-side switches, improving light-load efficiency and eliminating cross-conduction risk when properly timed.

Does the common drain configuration support independent source connections?

Yes. Pins 1 and 5 are electrically isolated source terminals for Channels 1 and 2 respectively, while Pin 3 is the shared drain. This enables true differential switching, floating load driving, or parallel operation with individual current sensing-without requiring external isolation components.

What is the gate plateau voltage and why does it matter for drive design?

The gate plateau voltage is 3.2 V, measured during Miller region transition. It defines the minimum gate drive voltage needed to sustain full enhancement during switching. Designers must ensure gate drivers deliver ≥3.2 V during the Miller plateau to avoid operating in the linear region, which would increase switching losses and thermal stress.