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Monolithic Power Systems Inc. LN60A01EP-LF
- Part No.:
- LN60A01EP-LF
- Manufacturer:
- Monolithic Power Systems Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 8-DIP (0.300", 7.62mm), 7 Leads
- Datasheet:
-
LN60A01EP-LF.pdf
- Description:
- MOSFET 3N-CH 600V 0.08A 8DIP
- Quantity:
- Payment:
- Shipping:
Inventory:9,931
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Product details
Overview
LN60A01EP-LF from Monolithic Power Systems is a triple 600V N-channel enhancement-mode MOSFET with common gate control, designed for high-voltage switching in offline AC/DC power supplies. It features 600V VDS, 200Ω RDS(on) at VGS = 10V, 0.08A continuous drain current, and PDIP-8 packaging. It enables compact active PFC and high-efficiency flyback/adaptor designs.
For engineers reviewing the LN60A01EP-LF datasheet, LN60A01EP-LF pinout, LN60A01EP-LF application, or LN60A01EP-LF equivalent, key selection criteria include shared-gate triple-FET topology, 600V avalanche-rated operation, thermal resistance (θJA = 105°C/W), SOIC-8/PDIP-8 package compatibility, and gate threshold voltage (0.8–1.2V) for low-voltage drive compatibility.
Technical Context
The LN60A01EP-LF integrates three independent 600V N-channel DMOS transistors sharing a single gate terminal, enabling synchronous switching across three isolated high-side paths. Its proprietary high-voltage process delivers 200Ω RDS(on) at 10V gate drive and supports 0.4A pulsed drain current under avalanche-safe conditions.
It operates with a gate threshold of 0.8–1.2V and exhibits 3000ns turn-off delay at VDS = 350V and IDS = 10mA. Thermal design requires attention to θJA = 105°C/W (PDIP-8) and junction temperature limits up to +125°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 600V - supports direct connection to 400V DC bus in offline SMPS without external snubbers |
| RDS(on) | 200Ω @ VGS = 10V - defines conduction loss in PFC boost or flyback primary side |
| ID Continuous | 0.08A - sets maximum steady-state output power capability per channel |
| toff | 3000ns @ VDS = 350V, IDS = 10mA - determines minimum switching frequency limit for zero-voltage transition |
| VGS(th) | 0.8–1.2V - ensures reliable turn-on with standard 3.3V/5V logic-level gate drivers |
| θJA | 105°C/W (PDIP-8) - requires ≥1"×1" FR4 copper area for thermal compliance at full load |
Pinout & Package
LN60A01EP-LF uses an 8-pin PDIP package with through-hole mounting. Pin 1 is S1 (Source 1), Pin 2 is S2 (Source 2), Pin 3 is Gate (common to all three FETs), Pin 4 is S3 (Source 3), Pin 5 is GND, Pin 6 is D3 (Drain 3), Pin 7 is D2 (Drain 2), and Pin 8 is D1 (Drain 1).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal of Channel 1 - connects to local ground reference for first switching path |
| 2 | S2 | Source terminal of Channel 2 - electrically isolated from S1/S3; enables multi-winding transformer control |
| 3 | Gate | Common gate input - drives all three FETs simultaneously; requires low-impedance driver due to total gate charge |
| 4 | S3 | Source terminal of Channel 3 - supports third-phase or auxiliary winding switching |
| 5 | GND | Power ground reference - ties internal substrate and provides return path for gate drive current |
| 6 | D3 | Drain terminal of Channel 3 - connects to high-voltage node (e.g., PFC output or flyback primary) |
| 7 | D2 | Drain terminal of Channel 2 - used for dual-output or interleaved converter topologies |
| 8 | D1 | Drain terminal of Channel 1 - primary high-side switch node in single-ended applications |
Key Features
| Feature | Design Value |
|---|---|
| Triple 600V N-channel topology | Enables single-gate control of three independent high-voltage switching paths without external level-shifting |
| Avalanche-rated structure | Withstands repetitive unclamped inductive switching events up to rated energy, eliminating need for external clamps in PFC stages |
| Low VGS(th) range (0.8–1.2V) | Ensures full enhancement with 3.3V microcontroller GPIO or optocoupler-driven gate signals |
| Shared gate architecture | Reduces PCB layout complexity and gate driver component count versus discrete triple-FET solutions |
Applications
| High-Efficiency AC/DC Adaptor | Offline Switching Power Supply |
|---|---|
Use Scenario: 40W universal-input wall adapter with active PFC and quasi-resonant flyback. IC Role / Device Role / Timing Role: Triple-FET implements PFC boost switch and dual flyback primary switches, synchronized via common gate. Use Value: Reduces component count by replacing three discrete 600V MOSFETs and associated gate resistors/drivers. | Use Scenario: 65W open-frame industrial power supply with dual-output flyback and auxiliary bias winding. IC Role / Device Role / Timing Role: Channels 1–3 drive main flyback primary, auxiliary bias, and hold-up capacitor discharge path respectively. Use Value: Enables precise timing alignment between primary and auxiliary switching events using single gate signal. |
| Active Power Factor Correction | Multi-Winding Transformer Control |
Use Scenario: 100W boost-type PFC stage operating at 65kHz with THD <5%. IC Role / Device Role / Timing Role: Acts as main boost switch; gate timing controlled by PFC controller IC (e.g., MP44010). Use Value: 600V rating allows direct interface with 400V DC link; low RDS(on) minimizes conduction loss at light load. | Use Scenario: Isolated dual-output forward converter with independent secondary regulation. IC Role / Device Role / Timing Role: Controls three separate transformer primary windings for phase-shifted or interleaved operation. Use Value: Eliminates need for three separate isolated gate drivers while maintaining channel independence via isolated sources. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar triple high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW9NK90Z | Single 900V N-channel MOSFET; no integrated triple topology or shared gate | Requires external gate driver isolation and three separate devices for equivalent functionality | Choose only when higher breakdown voltage (900V) is mandatory and board space permits discrete implementation |
| IXTP50N10P | Single 100V N-channel MOSFET; incompatible voltage rating and topology | Not suitable for offline 400V bus applications; lacks triple-channel integration | Reject for this application - insufficient VDS rating and no functional equivalence |
Compared with STW9NK90Z and IXTP50N10P, LN60A01EP-LF uniquely delivers integrated triple 600V switching with common gate control in one PDIP-8 package - reducing gate drive complexity, layout area, and BOM count where 600V operation and synchronized channel control are required.
Availability
LN60A01EP-LF is available at Aetrix Electronics and suitable for high-efficiency AC/DC adaptors, offline switching power supplies, and active power factor correction circuits requiring stable component supply and RoHS-compliant packaging.
Supply support for LN60A01EP-LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance analog and power ICs, headquartered in California and serving global power electronics markets since 1997.
The LN60A01EP-LF belongs to MPS's high-voltage discrete MOSFET product line, engineered specifically for compact, high-reliability offline power conversion where integration, avalanche ruggedness, and gate-drive simplicity are critical.
FAQ
What is the maximum allowable gate-source voltage for LN60A01EP-LF?
The absolute maximum VGS is ±15V. Operation beyond this risks permanent gate oxide damage. Recommended gate drive is 10V for full RDS(on) specification and 5V for logic-level compatibility, with fast rise/fall times to minimize switching losses.
Can LN60A01EP-LF be used in synchronous rectification applications?
No - LN60A01EP-LF is a high-side N-channel device with source terminals isolated per channel and no body diode optimization for reverse conduction. Its 600V rating and 200Ω RDS(on) make it unsuitable for low-voltage, high-current synchronous rectification where low RDS(on) and optimized diode recovery are essential.
Does LN60A01EP-LF require external gate resistors?
Yes - a series gate resistor (typically 10–47Ω) is required to dampen ringing, control dV/dt, and limit peak gate current during switching. The total gate charge (not explicitly stated but implied by ton/toff) necessitates careful driver strength matching to avoid shoot-through or slow transitions.
How is thermal performance affected when mounted on a 1"×1" FR4 board?
At θJA = 105°C/W, dissipating 1.3W (maximum PD) raises junction temperature by 136.5°C above ambient. With TJ(max) = 125°C and TA = 85°C, derating to ≤0.38W is required for safe operation - confirming that full-power use demands additional copper area or forced airflow.
Is the GND pin (Pin 5) internally connected to all source terminals?
No - Pin 5 (GND) is a dedicated substrate and thermal reference pin, not electrically tied to S1, S2, or S3. Each source is fully isolated, allowing independent grounding of each channel's low-side return path in multi-winding or interleaved topologies.
What is the significance of the "EP" suffix in LN60A01EP-LF?
The "EP" denotes the PDIP-8 package variant (vs. "ES" for SOIC-8). The "-LF" suffix indicates lead-free, RoHS-compliant finish. Together, LN60A01EP-LF specifies the through-hole, environmentally compliant version of this triple MOSFET.
LN60A01EP-LF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Monolithic Power Systems Inc.
- Series:
- -
- Package/Case:
- 8-DIP (0.300", 7.62mm), 7 Leads
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 3 N-Channel, Common Gate
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 600V
- Current - Continuous Drain (Id) @ 25°C:
- 80mA
- Rds On (Max) @ Id, Vgs:
- 190Ohm @ 10mA, 10V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- 1.3W
- Operating Temperature:
- -20°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 8-PDIP-7B
LN60A01EP-LF FAQ
1.How can I place an order for LN60A01EP-LF through Aetrix?
Please submit a Request for Quotation (RFQ) for LN60A01EP-LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LN60A01EP-LF reliable?
The price and inventory of LN60A01EP-LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LN60A01EP-LF is usually 5 days.
3.What payment methods are accepted for LN60A01EP-LF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LN60A01EP-LF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LN60A01EP-LF?
LN60A01EP-LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LN60A01EP-LF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LN60A01EP-LF?
For technical support, including LN60A01EP-LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LN60A01EP-LF requirements.
6.How does Aetrix verify that LN60A01EP-LF is sourced from the original manufacturer or authorized distributors?
All LN60A01EP-LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LN60A01EP-LF meets industry standards.
7.What is the process for return or replacement of LN60A01EP-LF?
All LN60A01EP-LF units undergo pre-shipment inspection (PSI). If there is an issue with LN60A01EP-LF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LN60A01EP-LF part is unused and in its original packaging.
Return procedure for LN60A01EP-LF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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