Microchip Technology LND150N3-G-P013

Overview

LND150N3-G-P013 from Supertex Inc. is a high-voltage N-channel depletion-mode DMOS FET in TO-92 package, rated for 500 V drain-to-source breakdown voltage, 1.0–3.0 mA saturated drain current (IDSS), and 850–1000 Ω on-state resistance (RDS(ON)). It features ESD-protected gate, integral source-drain diode, and operates as a normally-on switch ideal for precision constant current sources and high-voltage ramp generation.

For engineers reviewing the LND150N3-G-P013 datasheet, LND150N3-G-P013 pinout, LND150N3-G-P013 application, or LND150N3-G-P013 equivalent, key selection criteria include its depletion-mode operation, -1.0 to -3.0 V gate-to-source off voltage (VGS(OFF)), thermal stability up to +150°C, and suitability for solid-state relays and input protection circuits requiring fail-safe turn-on behavior.

Technical Context

The LND150N3-G-P013 uses lateral DMOS technology to achieve stable depletion-mode operation without secondary breakdown risk. Its gate is protected by integrated ESD structures, and it exhibits low power drive requirements due to high input impedance and 7.5–10 pF input capacitance (CISS) at VGS = -10 V.

It delivers precise current regulation with IDSS tolerance of 1.0–3.0 mA at VGS = 0 V and VDS = 25 V, while maintaining RDS(ON) drift under 1.2 %/°C. The device supports continuous drain current up to 30 mA at TA = 25°C and features a built-in source-drain diode with 0.9 V forward drop at 1.0 mA.

Key Specifications

Pinout & Package

Package: TO-92 (3-lead plastic through-hole). Standard lead configuration with GATE, SOURCE, DRAIN arranged linearly; pin 1 = DRAIN, pin 2 = GATE, pin 3 = SOURCE per Supertex Doc.# DSPD-3TO92N3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar depletion-mode FET applications.

Compared with IXTP01N50D and SI2301DS, the LND150N3-G-P013 uniquely combines TO-92 form factor, 500 V rating, and true depletion-mode operation-enabling compact, self-biasing, high-voltage current regulation unattainable with either alternative.

Availability

LND150N3-G-P013 is available at Aetrix Electronics and suitable for solid-state relays, constant current sources, and input protection circuits requiring stable component supply, RoHS-compliant packaging, and long-term industrial availability.

Supply support for LND150N3-G-P013 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Supertex Inc. was a U.S.-based semiconductor company specializing in high-voltage analog and power management ICs and discrete devices before its acquisition by Microchip Technology in 2017.

The LND150 family was designed specifically for high-voltage, low-power, depletion-mode applications including fail-safe switching, precision current regulation, and ruggedized input protection-leveraging lateral DMOS for reliability beyond silicon limitations.

FAQ

What is the gate-to-source off voltage specification for LND150N3-G-P013?

The LND150N3-G-P013 has a gate-to-source off voltage (VGS(OFF)) ranging from -1.0 V to -3.0 V, measured at VGS = 25 V and ID = 100 nA. This parameter defines the maximum negative gate bias required to fully pinch off the channel. For reliable turn-off in circuit design, a gate drive of ≤ -3.0 V is recommended. The LND150N3-G-P013 maintains this specification across its operating temperature range of -55°C to +150°C.

Can LND150N3-G-P013 be used in linear amplification applications?

Yes, the LND150N3-G-P013 supports linear-mode operation due to its freedom from secondary breakdown and excellent thermal stability. Its transconductance (GFS) is 1.0–2.0 mS at VDS = 0 V and ID = 1.0 mA, and its output characteristics show well-behaved saturation curves up to 400 V. The LND150N3-G-P013 is documented for voltage ramp generation and amplification in the official datasheet, confirming suitability for analog gain stages with proper heatsinking.

What is the maximum continuous drain current for LND150N3-G-P013 at 25°C ambient?

The LND150N3-G-P013 supports a maximum continuous drain current (ID) of 30 mA at TA = 25°C in its TO-92 package, limited by its 0.74 W power dissipation rating and 132 °C/W junction-to-ambient thermal resistance. At elevated temperatures, derating applies: the device reaches thermal limit at approximately 100°C ambient. The LND150N3-G-P013 datasheet confirms this rating under DC conditions with no pulse duty cycle restrictions.

Does LND150N3-G-P013 include an integrated body diode?

Yes, the LND150N3-G-P013 integrates a source-drain diode with a forward voltage (VSD) of ≤ 0.9 V at ISD = 1.0 mA and VGS = -10 V. This diode is intrinsic to the DMOS structure and enables bidirectional current flow in protection and clamp applications. Unlike discrete diode solutions, the LND150N3-G-P013's diode shares the same thermal environment and switching timing as the FET, simplifying layout and improving reliability in input protection circuits.

Is LND150N3-G-P013 RoHS-compliant and lead-free?

Yes, the "-G" suffix in LND150N3-G-P013 explicitly denotes a lead (Pb)-free and RoHS-compliant package per Supertex documentation. The device meets EU RoHS Directive 2011/65/EU requirements and uses green molding compound. All variants bearing the "-G" designation-including LND150N3-G-P013-are qualified for lead-free reflow soldering processes with peak temperatures up to 260°C, as confirmed in the DSFP-LND150 datasheet.