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STMicroelectronics M1F45M12W2-1LA
- Part No.:
- M1F45M12W2-1LA
- Manufacturer:
- STMicroelectronics
- Category:
- FET, MOSFET Arrays
- Package:
- 32-PowerDIP Module (1.264", 32.10mm)
- Datasheet:
-
M1F45M12W2-1LA.pdf
- Description:
- MOSFET 4N-CH 1200V ACEPACK DMT
- Quantity:
- Payment:
- Shipping:
Inventory:9,108
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Product details
Overview
M1F45M12W2-1LA from STMicroelectronics is an automotive-grade ACEPACK DMT-32 power module integrating four 1200 V, 47.5 mΩ typ. SiC MOSFETs in a fourpack topology with integrated NTC temperature sensor, designed for DC/DC converter stages in on-board chargers (OBC) of hybrid and electric vehicles. It features AQG-324 qualification, 175 °C max junction temperature, and 3 kV isolation voltage.
For engineers reviewing the M1F45M12W2-1LA datasheet, M1F45M12W2-1LA pinout, M1F45M12W2-1LA application, or M1F45M12W2-1LA equivalent, this module's SiC MOSFET electrical characteristics (RDS(on), Qg, Eon/Eoff), thermal resistance (RthJC = 0.38 °C/W), NTC B-value (4000 K), and ACEPACK DMT-32 mechanical layout are critical for OBC system-level thermal, switching loss, and isolation design validation.
Technical Context
This module implements a fourpack configuration-two half-bridge legs-with discrete gate terminals (G1–G4) and source terminals (S1–S4) enabling independent gate drive for complex topologies like dual-phase interleaved DC/DC converters. Each SiC MOSFET integrates an intrinsic body diode with trr = 13.5 ns (TJ = 25 °C) and Qrr = 189 nC.
The AlN-based DBC substrate delivers low RthJC (0.38 °C/W) and supports continuous operation up to TJ = 175 °C. The integrated NTC (R25 = 10 kΩ, B25/100 = 4000 K) is electrically isolated and thermally coupled to the die, providing real-time junction temperature monitoring with ±2% R25 tolerance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS rating | 1200 V - supports 800 V bus designs with 1.5× safety margin for OBC transient overvoltage |
| RDS(on) | 47.5 mΩ typ. at VGS = 18 V, ID = 20 A - enables <3 W conduction loss per switch at 30 A RMS |
| Qg | 100 nC - determines gate driver power requirement and influences switching speed control via RG |
| Eon/Eoff | 547 µJ / 91 µJ at TJ = 25 °C - defines total switching energy per cycle at 800 V, 25 A, critical for efficiency modeling |
| RthJC | 0.38 °C/W - allows direct thermal interface to heatsink; enables >100 W dissipation before reaching 175 °C junction |
| NTC R25 | 10 kΩ ±2% - standard biasing compatibility with common OBC temperature acquisition circuits |
| Isolation voltage | 3 kV AC for 60 s - satisfies reinforced insulation requirements for EV high-voltage DC/DC systems |
Pinout & Package
ACEPACK DMT-32 is a 32-pin, surface-mount power module with copper baseplate, AlN ceramic insulation, and molded epoxy housing. Dimensions: 44.0 × 27.4 × 5.7 mm (L × W × H), creepage distance enhanced by molded grooves.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1, P2 | High-side DC bus input (positive) | Parallel-connected inputs for dual-leg current sharing; rated for full module current |
| N1, N2 | Low-side DC bus return (negative) | Parallel-connected returns; electrically isolated from baseplate and gate signals |
| PH1, PH2 | Phase output nodes | Outputs of two independent half-bridges; connect to transformer primary or filter inductor |
| G1–G4 | Individual gate drive inputs | Enable independent timing control per switch; require isolated gate drivers due to floating potentials |
| S1–S4 | Source terminals (per MOSFET) | Provide Kelvin sense paths for accurate gate-source voltage control and current monitoring |
| T1, T2 | NTC temperature sensor terminals | Differential pair for 10 kΩ NTC; referenced to module ground, not high-voltage domains |
Key Features
| Feature | Design Value |
|---|---|
| AQG-324 qualification | Validated for automotive powertrain applications including vibration, thermal cycling, and humidity testing |
| AlN DBC substrate | Reduces thermal resistance by ~40% vs. Al2O3, enabling higher power density without derating |
| Integrated NTC with B = 4000 K | Enables accurate junction temperature estimation across -40 to 150 °C with <±1 °C error in typical OBC layouts |
| Fourpack topology with discrete terminals | Supports interleaved, phase-shifted, or dual-output DC/DC topologies without external paralleling components |
| Molded creepage enhancement | Grooved package surface achieves >8 mm creepage distance at 3 kV isolation, meeting IEC 60664-1 |
Applications
| On-Board Charger (OBC) DC/DC Stage | Bi-Directional DC/DC Converter |
|---|---|
|
Use Scenario: High-efficiency 3.3 kW DC/DC stage stepping down 400 V battery to 12 V/48 V auxiliary supply in BEV OBC. IC Role / Device Role / Timing Role: Fourpack SiC MOSFET module implementing dual-phase interleaved buck-boost converter with synchronous rectification. Use Value: 47.5 mΩ RDS(on) and low Eoff (91 µJ) enable >97% peak efficiency at 100 kHz switching, reducing heatsink size by 35% vs. Si IGBT modules. |
Use Scenario: Vehicle-to-load (V2L) capable bi-directional DC/DC linking traction battery and external AC/DC loads during parking. IC Role / Device Role / Timing Role: Core switching element in dual-active-bridge (DAB) topology, requiring precise gate timing control per G1–G4. Use Value: Independent gate/source terminals allow asymmetric duty cycle and phase shift control, supporting ZVS across full load range and bidirectional power flow. |
| EV Auxiliary Power Module | High-Voltage Battery Management System (BMS) Isolated DC/DC |
|
Use Scenario: Compact 1.5 kW auxiliary power unit supplying HVAC, infotainment, and lighting from 400–800 V battery. IC Role / Device Role / Timing Role: Primary-side switch in resonant LLC converter, leveraging low Coss (90 pF) and fast trr (13.5 ns) for soft-switching. Use Value: SiC diode reverse recovery performance eliminates snubber losses, enabling >98% efficiency at light load and reduced EMI filtering cost. |
Use Scenario: Isolated 50 W DC/DC supply powering isolated CAN transceivers and cell monitoring ICs in multi-string BMS stacks. IC Role / Device Role / Timing Role: High-reliability, reinforced-isolation power switch delivering 3 kV withstand for functional safety (ISO 26262 ASIL-B). Use Value: Integrated 3 kV isolation and AQG-324 qualification eliminate need for external isolation transformers or optocouplers, reducing BOM count by 4 components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC fourpack power module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Wolfspeed CFD20120D | 1200 V, 40 mΩ SiC MOSFET fourpack; no integrated NTC; TO-247-4L discrete paralleled layout | Requires external NTC placement and thermal calibration; less compact than ACEPACK DMT-32 | Preferred when board-level thermal sensing flexibility outweighs module integration benefits |
| Infineon FF450R12ME7_B11 | 1200 V, 0.45 mΩ Si IGBT fourpack; no integrated NTC; higher conduction loss, lower switching frequency limit | Optimized for <50 kHz operation; unsuitable for >100 kHz resonant topologies due to trr > 1 µs | Selected only where cost sensitivity dominates efficiency and power density targets |
Compared with CFD20120D and FF450R12ME7_B11, M1F45M12W2-1LA uniquely combines integrated NTC, AlN-based thermal performance, and automotive-qualified SiC switching in a single ACEPACK DMT-32 footprint-enabling smaller, lighter, and more thermally robust OBC DC/DC stages without compromising functional safety compliance.
Availability
M1F45M12W2-1LA is available at Aetrix Electronics and suitable for on-board charger (OBC) DC/DC stages, bi-directional DC/DC converters, and EV auxiliary power modules requiring stable component supply, AQG-324 qualification, and 175 °C junction operation.
Supply support for M1F45M12W2-1LA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power electronics solutions with vertical manufacturing and broad IP portfolio.
M1F45M12W2-1LA belongs to ST's ACEPACK family of automotive-qualified SiC power modules, engineered specifically for high-efficiency, high-power-density traction and charging systems in electric vehicles.
FAQ
What is the maximum recommended gate drive voltage for M1F45M12W2-1LA?
The absolute maximum gate-source voltage is -10 V to +22 V, but ST specifies a recommended operating range of -5 V to +18 V. Driving above +18 V increases gate oxide stress and long-term reliability risk without meaningful RDS(on) improvement; below -5 V risks incomplete turn-off under high dv/dt conditions.
How is the NTC sensor electrically isolated from high-voltage terminals?
The NTC (T1/T2) is mounted on the AlN substrate and connected via insulated traces routed beneath the molding compound. Its terminals are galvanically isolated from P1/N1/PH1/G1/S1 and all other high-side terminals, with 3 kV isolation verified per IEC 60747-5-2 and confirmed in DS13915 Table 7.
Can M1F45M12W2-1LA be used in a single-phase inverter configuration?
Yes-it supports single-phase inverter use by configuring two switches (e.g., P1, N1, PH1, G1, S1) as one leg and leaving G2–G4 unconnected. However, its fourpack topology is optimized for dual-leg topologies; using only one leg forfeits thermal and layout advantages of parallel current sharing.
What is the significance of the "W2" suffix in the part number M1F45M12W2-1LA?
The "W2" denotes the second-generation 1200 V SiC MOSFET die used in this module, featuring improved RDS(on) temperature coefficient, lower Qgd/Qgs ratio, and enhanced short-circuit ruggedness versus the first-generation "W1" die, as documented in ST's SiC MOSFET technology roadmap and DS13915 revision history.
M1F45M12W2-1LA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- ECOPACK®
- Package/Case:
- 32-PowerDIP Module (1.264", 32.10mm)
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Silicon Carbide (SiC)
- Configuration:
- 4 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Rds On (Max) @ Id, Vgs:
- 64mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id:
- 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 100nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2086pF @ 800V
- Power - Max:
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- ACEPACK DMT-32
M1F45M12W2-1LA FAQ
1.How can I place an order for M1F45M12W2-1LA through Aetrix?
Please submit a Request for Quotation (RFQ) for M1F45M12W2-1LA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M1F45M12W2-1LA reliable?
The price and inventory of M1F45M12W2-1LA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M1F45M12W2-1LA is usually 5 days.
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M1F45M12W2-1LA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M1F45M12W2-1LA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M1F45M12W2-1LA?
For technical support, including M1F45M12W2-1LA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M1F45M12W2-1LA requirements.
6.How does Aetrix verify that M1F45M12W2-1LA is sourced from the original manufacturer or authorized distributors?
All M1F45M12W2-1LA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M1F45M12W2-1LA meets industry standards.
7.What is the process for return or replacement of M1F45M12W2-1LA?
All M1F45M12W2-1LA units undergo pre-shipment inspection (PSI). If there is an issue with M1F45M12W2-1LA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M1F45M12W2-1LA part is unused and in its original packaging.
Return procedure for M1F45M12W2-1LA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M1F45M12W2-1LA Tags
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SSM6N7002KFU,LF
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2N7002DW-7-F
Diodes Incorporated
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SSM6L56FE,LM
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SSM6N37FU,LF
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2N7002DWH6327XTSA1
Infineon Technologies
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2N7002BKS,115
Nexperia USA Inc.
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DMG1016UDW-7
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UM6K33NTN
Rohm Semiconductor
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DMG6602SVT-7
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