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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Microchip Technology MCP87055T-U/LC

Name: MCP87055T-U/LC
Brand: Microchip Technology
SKU: MCP87055T-U/LC
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MCP87055T-U/LC

Manufacturer:: Microchip Technology

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: MCP87055T-U/LC.pdf

Description:: MOSFET N-CH 25V 60A 8PDFN

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Product details

Overview

MCP87055T-U/LC from Microchip Technology is an N-channel power MOSFET in a 8-lead PDFN 3.3 mm × 3.3 mm package, rated for 25 V drain-to-source breakdown voltage, 60 A continuous drain current at T_C = 25°C, and 4.7 mΩ R_DS(ON) at V_GS = 10 V / I_D = 20 A. It delivers low gate charge (11 nC typ), fast switching (t_r = 11 ns, t_f = 4.6 ns), and supports short dead-time operation in high-frequency synchronous buck converters.

For engineers reviewing the MCP87055T-U/LC datasheet, MCP87055T-U/LC pinout, MCP87055T-U/LC application, or MCP87055T-U/LC equivalent, key selection criteria include its 2.1 Ω series gate resistance, 150°C maximum junction temperature, 3.4°C/W junction-to-case thermal resistance, and suitability for point-of-load DC-DC conversion in servers and automotive power management.

Technical Context

This MOSFET employs advanced silicon processing to achieve a low figure of merit (R_DS(ON) × Q_G)-52.7 mΩ·nC at V_GS = 4.5 V-enabling high-efficiency power conversion with minimized conduction and switching losses. Its low Q_GD (4.5 nC typ) and fast turn-on/turn-off timing support high-frequency operation up to several MHz in hard-switched topologies.

The device features an integrated body diode with 0.8 V forward voltage at 20 A and 15 ns reverse recovery time, optimized for synchronous rectification. Thermal performance is defined by R_θJC = 3.4°C/W and R_θJX = 66°C/W (on 4-layer FR4 with 1"×1" 2 oz copper pad), enabling robust thermal management in compact layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	+25 V - Supports input rails up to 24 V systems without derating in standard PoL applications.
R_DS(ON)	4.7 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 20 A, critical for high-current server VRMs.
Q_G	11 nC typ - Reduces gate drive power and enables efficient operation with low-side gate drivers like MIC4605.
t_r/t_f	11 ns / 4.6 ns - Allows sub-100 ns dead-time control in synchronous buck converters, minimizing shoot-through risk.
T_J Max	+150°C - Rated for ultra-high-temperature operation in under-hood automotive and high-density server environments.
R_θJC	3.4°C/W - Enables direct thermal coupling to heatsinks or PCB copper planes for high-power dissipation.
E_AS	50 mJ - Withstands unclamped inductive switching events in motor gate drives and DC-DC transient conditions.

Pinout & Package

The MCP87055T-U/LC uses an 8-lead Power Dual Flatpack No-Lead (PDFN) package measuring 3.3 mm × 3.3 mm × 0.9 mm, with an exposed thermal pad on the bottom side for enhanced heat dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source connection for internal parallel FET cells; must be low-inductance routed to ground plane.
4	Gate	Control terminal requiring low-impedance gate driver path; series RG = 2.1 Ω limits ringing and EMI.
5, 6, 7, 8 + Exposed Pad	Drain	High-current drain node and primary thermal path; exposed pad must be soldered to large copper area for R_θJC compliance.

Key Features

Feature	Design Value
Low R_DS(ON) × Q_G Figure of Merit	52.7 mΩ·nC @ V_GS = 4.5 V - Directly reduces total power loss in high-frequency switching applications.
Fast Switching Speed	t_d(on) = 4.5 ns, t_f = 4.6 ns - Enables >1 MHz operation while maintaining ZVS/ZCS compatibility in advanced topologies.
Ultra-High Temperature Rating	T_J = –55°C to +150°C - Certified for under-hood automotive modules and industrial power supplies with minimal derating.
Low Q_GD/Q_G Ratio	4.5 nC / 11 nC = 0.41 - Improves Miller immunity and reduces required gate drive strength during hard switching.
RoHS-Compliant Packaging	Lead-free PDFN with EU exemption 7(a) for high-melting solder - Meets global environmental compliance without thermal performance trade-offs.

Applications

Server Point-of-Load Converter	Automotive ADAS Power Supply
Use Scenario: 12 V input to 1.0–1.8 V output, 40–60 A load, 500 kHz–1 MHz switching frequency in CPU/GPU VRMs. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in dual-phase interleaved buck converter, handling peak currents up to 60 A. Use Value: 4.7 mΩ R_DS(ON) and 11 ns rise time minimize conduction loss and dead-time penalty, improving full-load efficiency by ≥0.8% vs. legacy 6 mΩ devices.	Use Scenario: 12 V battery-fed 5 V/3.3 V auxiliary rail for radar sensor modules operating at –40°C to +125°C ambient. IC Role / Device Role / Timing Role: Low-side switch in high-efficiency buck controller IC reference design (e.g., MIC28514), managing transient loads up to 25 A. Use Value: 150°C T_J rating and 0.8 V body diode V_FD ensure reliable startup and fault recovery in cold-crank conditions without thermal shutdown.
Networking Switch ASIC Power	Industrial PLC I/O Module
Use Scenario: Compact 48 V to 3.3 V intermediate bus converter powering multi-gigabit Ethernet PHYs with burst-mode load profiles. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward topology, switching at 300–600 kHz. Use Value: 420 pF C_OSS and 114 pF C_RSS reduce capacitive switching loss and improve light-load efficiency over competing 8 mΩ devices.	Use Scenario: 24 V DC input to isolated 5 V/12 V outputs for digital I/O protection circuits in factory automation controllers. IC Role / Device Role / Timing Role: Primary-side switch in flyback or active-OR configuration, supporting hot-swap and reverse-polarity protection. Use Value: 162 mJ E_AS rating and 1 mH inductive test condition ensure robustness against inductive kickback from solenoid drivers and relay coils.

Server Point-of-Load Converter

Automotive ADAS Power Supply

Use Scenario: 12 V input to 1.0–1.8 V output, 40–60 A load, 500 kHz–1 MHz switching frequency in CPU/GPU VRMs.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in dual-phase interleaved buck converter, handling peak currents up to 60 A.

Use Value: 4.7 mΩ R_DS(ON) and 11 ns rise time minimize conduction loss and dead-time penalty, improving full-load efficiency by ≥0.8% vs. legacy 6 mΩ devices.

Use Scenario: 12 V battery-fed 5 V/3.3 V auxiliary rail for radar sensor modules operating at –40°C to +125°C ambient.

IC Role / Device Role / Timing Role: Low-side switch in high-efficiency buck controller IC reference design (e.g., MIC28514), managing transient loads up to 25 A.

Use Value: 150°C T_J rating and 0.8 V body diode V_FD ensure reliable startup and fault recovery in cold-crank conditions without thermal shutdown.

Networking Switch ASIC Power

Industrial PLC I/O Module

Use Scenario: Compact 48 V to 3.3 V intermediate bus converter powering multi-gigabit Ethernet PHYs with burst-mode load profiles.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward topology, switching at 300–600 kHz.

Use Value: 420 pF C_OSS and 114 pF C_RSS reduce capacitive switching loss and improve light-load efficiency over competing 8 mΩ devices.

Use Scenario: 24 V DC input to isolated 5 V/12 V outputs for digital I/O protection circuits in factory automation controllers.

IC Role / Device Role / Timing Role: Primary-side switch in flyback or active-OR configuration, supporting hot-swap and reverse-polarity protection.

Use Value: 162 mJ E_AS rating and 1 mH inductive test condition ensure robustness against inductive kickback from solenoid drivers and relay coils.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Vishay SiR872DP	25 V, 5.2 mΩ @ 10 V, Q_G = 13.5 nC, same PDFN 3.3×3.3 package	Slightly higher Q_G increases gate drive loss; lower R_DS(ON) improves conduction efficiency at <15 A	Preferred when lowest possible R_DS(ON) dominates over switching loss in medium-frequency (<300 kHz) designs.
Infineon BSC014N03LS	30 V, 1.4 mΩ @ 10 V, Q_G = 24 nC, PG-TSDSON-8 (3.3×3.3 mm)	Higher voltage rating and lower R_DS(ON), but 2.2× higher Q_G degrades high-frequency efficiency	Appropriate for 24 V input systems requiring margin or where conduction loss dominates thermal budget.

Compared with MCP87055T-U/LC, SiR872DP offers marginally better conduction loss but requires stronger gate drive due to higher Q_G, while BSC014N03LS trades significant switching loss for ultra-low R_DS(ON) and extended voltage headroom-making MCP87055T-U/LC optimal for 12–24 V, 500 kHz–1 MHz PoL applications demanding balanced FOM.

Availability

MCP87055T-U/LC is available at Aetrix Electronics and suitable for server VRMs, automotive ADAS power supplies, and industrial PLC I/O modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for MCP87055T-U/LC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology Inc. is a U.S.-based semiconductor manufacturer specializing in microcontrollers, analog devices, and power semiconductors, with ISO/TS-16949 certified wafer fabrication and packaging facilities.

The MCP87055 belongs to Microchip's high-speed N-channel power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in space-constrained computing and automotive power systems.

FAQ

What is the maximum continuous drain current rating for the MCP87055T-U/LC?

The MCP87055T-U/LC is rated for 60 A continuous drain current at case temperature T_C = 25°C, per its Absolute Maximum Ratings table. At elevated temperatures, derating applies: e.g., ~40 A at T_C = 100°C, based on its R_θJC = 3.4°C/W and P_D limit. This rating assumes proper PCB thermal design with the exposed drain pad fully soldered to a minimum 1"×1" 2 oz copper area.

Does the MCP87055T-U/LC have a specified avalanche energy rating?

Yes, the MCP87055T-U/LC has two avalanche energy ratings: E_AS = 50 mJ (ID = 10 A, L = 1 mH, R_G = 25 Ω) and E_AS = 162 mJ (ID = 18 A, L = 1 mH, R_G = 25 Ω). These values reflect single-pulse unclamped inductive switching capability and are validated per JEDEC standards, making MCP87055T-U/LC suitable for designs subject to inductive transients such as motor gate drives or relay control.

What is the gate-to-source threshold voltage range for the MCP87055T-U/LC?

The MCP87055T-U/LC has a gate-to-source threshold voltage V_GS(TH) range of 1.1 V (min) to 1.7 V (max), with a typical value of 1.35 V, measured at V_DS = V_GS and I_D = 250 µA. This low-threshold design ensures reliable turn-on with 3.3 V logic-level gate drivers and maintains stable operation across –55°C to +150°C junction temperature.

How does the thermal resistance of the MCP87055T-U/LC compare between junction-to-case and junction-to-board?

The MCP87055T-U/LC specifies R_θJC = 3.4°C/W (JEDEC 51-14 method) and R_θJX = 66°C/W (measured on 4-layer FR4 with 1"×1" 2 oz copper pad). R_θJC reflects direct thermal path to the case (exposed drain pad), while R_θJX represents system-level board conduction-highlighting that effective heatsinking via the pad yields >19× better thermal performance than relying solely on PCB traces.

Is the MCP87055T-U/LC compatible with standard PDFN 3.3×3.3 mm footprint designs?

Yes, the MCP87055T-U/LC uses the industry-standard 8-lead PDFN 3.3 mm × 3.3 mm package (also referenced as DFN or Power Dual Flatpack No-Lead), matching IPC-7351B footprint MS-012AC. Its pinout-S/S/S/G/D/D/D/D with exposed thermal pad-is mechanically and thermally compatible with existing layouts for similar-rated MOSFETs, including those from Vishay, Infineon, and ON Semiconductor.

MCP87055T-U/LC Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 1.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 4.5 V

Vgs (Max):: +10V, -8V

Input Capacitance (Ciss) (Max) @ Vds:: 890 pF @ 12.5 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PDFN (3.3x3.3)

MCP87055T-U/LC FAQ

1.How can I place an order for MCP87055T-U/LC through Aetrix?

Please submit a Request for Quotation (RFQ) for MCP87055T-U/LC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MCP87055T-U/LC reliable?

The price and inventory of MCP87055T-U/LC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MCP87055T-U/LC is usually 5 days.

3.What payment methods are accepted for MCP87055T-U/LC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MCP87055T-U/LC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MCP87055T-U/LC?

MCP87055T-U/LC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MCP87055T-U/LC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MCP87055T-U/LC?

For technical support, including MCP87055T-U/LC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MCP87055T-U/LC requirements.

6.How does Aetrix verify that MCP87055T-U/LC is sourced from the original manufacturer or authorized distributors?

All MCP87055T-U/LC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MCP87055T-U/LC meets industry standards.

7.What is the process for return or replacement of MCP87055T-U/LC?

All MCP87055T-U/LC units undergo pre-shipment inspection (PSI). If there is an issue with MCP87055T-U/LC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MCP87055T-U/LC part is unused and in its original packaging.

Return procedure for MCP87055T-U/LC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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