Diodes Incorporated MMBF170Q-13-F

Overview

MMBF170Q-13-F from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 60 V V_DSS, 500 mA continuous drain current, and 5.0 Ω R_DS(on) at V_GS = 10 V. It features low gate threshold voltage (0.8–3.0 V), fast 10 ns switching times, and AEC-Q101 qualification for automotive reliability. It serves as a compact load switch in low-power DC-DC converter bias rails and LED driver control paths.

For engineers reviewing the MMBF170Q-13-F datasheet, MMBF170Q-13-F pinout, MMBF170Q-13-F application, or MMBF170Q-13-F equivalent, key selection criteria include verified R_DS(on) at 4.5 V drive, thermal resistance (R_θJA = 417 K/W), leakage limits (I_DSS ≤ 1.0 µA), and SOT23 terminal configuration for space-constrained PCB layouts.

Technical Context

This discrete power MOSFET operates in enhancement mode with a single N-channel silicon structure. Its gate threshold voltage range (0.8–3.0 V) enables direct interfacing with 3.3 V and 5 V logic controllers without level shifting. The device uses a planar DMOS process optimized for low input capacitance (C_iss = 22–40 pF) and minimal reverse transfer capacitance (C_rss = 2.0–5.0 pF), supporting clean turn-on/turn-off waveforms in high-frequency switching.

Thermal performance is defined for FR-4 PCB mounting per AP02001 layout, delivering 300 mW total power dissipation at T_A = 25°C and derating to zero at T_A ≈ 150°C. Junction temperature range spans −55°C to +150°C, validated under AEC-Q101 stress testing including HTGB, HTRB, and temperature cycling.

Key Specifications

Pinout & Package

Package: SOT23 - Surface-mount plastic case, 0.008 g weight, UL 94V-0 rated, moisture sensitivity level 1. Dimensions: 2.9 × 1.35 × 0.9 mm (L × W × H), with matte tin-plated Alloy 42 leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Compared with DMN2004LK-7 and 2N7002K-T1-GE3, the MMBF170Q-13-F delivers tighter V_GS(th) distribution (0.8–3.0 V), guaranteed AEC-Q101 compliance, and lower C_rss-making it preferred for automotive and noise-sensitive industrial control where gate drive margin and EMI robustness are critical.

Availability

MMBF170Q-13-F is available at Aetrix Electronics and suitable for automotive interior lighting control, USB-C power path management, and industrial sensor bias supply requiring stable component supply across production lifecycles.

Supply support for MMBF170Q-13-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The MMBF170Q belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered for space-constrained, high-reliability switching in automotive body electronics and industrial control systems.

FAQ

What is the maximum continuous drain current for MMBF170Q-13-F at 85°C ambient?

At T_A = 85°C, the maximum continuous drain current is 310 mA. This is derived from the 300 mW power limit and R_DS(on) = 5.0 Ω, using P_D = I_D² × R_DS(on). Derating follows the 1.80 mW/°C slope shown in Figure 5 of DS37720 Rev. 1–2, confirmed for FR-4 PCB mounting per AP02001 layout.

Is MMBF170Q-13-F suitable for high-side switching configurations?

Yes, but only with gate drive ≥ V_DS + V_GS(th). As a standard N-channel MOSFET, it requires a gate voltage exceeding the source potential. For true high-side use, a charge pump or bootstrap circuit must generate ≥10 V above the source node to ensure R_DS(on) remains low and conduction losses acceptable.

Does MMBF170Q-13-F have integrated ESD protection on the gate terminal?

No. The device has no internal gate protection diodes. Per DS37720 Section 1, handling requires Class 1C ESD precautions (≤250 V HBM). External 10 kΩ gate resistor and 10 nF ceramic capacitor to source are recommended for board-level ESD immunity in automotive environments.

How does the AEC-Q101 qualification impact thermal test conditions for MMBF170Q-13-F?

AEC-Q101 adds high-temperature gate bias (HTGB) stress at 150°C for 1000 hours with V_GS = −15 V, verifying gate oxide integrity beyond standard JEDEC limits. This ensures long-term stability of V_GS(th) and I_GSS in under-hood automotive applications where junction temperatures routinely exceed 125°C.