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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Microchip Technology MSC180SMA120B

Name: MSC180SMA120B
Brand: Microchip Technology
SKU: MSC180SMA120B
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MSC180SMA120B

Manufacturer:: Microchip Technology

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: MSC180SMA120B.pdf

Description:: MOSFET 1200V 25A TO-247

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Product details

Overview

MSC180SMA120B from Microchip Technology is a 1200V, 180 mΩ typical (at V_GS = 20V) silicon carbide (SiC) N-channel power MOSFET in TO-247 package, designed for high-efficiency switching in PV inverters and EV chargers. It delivers 21 A continuous drain current at T_C = 25 °C, supports gate drive at –5V/20V, and operates up to T_J = 175 °C.

For engineers reviewing the MSC180SMA120B datasheet, MSC180SMA120B pinout, MSC180SMA120B application, or MSC180SMA120B equivalent, key selection considerations include its 1200V blocking capability, low R_DS(on) with temperature stability, fast switching (E_on = 223 µJ, E_off = 24 µJ at V_DD = 800V), robust body diode (t_rr = 28 ns), and AEC-Q101 qualification option.

Technical Context

This SiC MOSFET employs a planar trench-gate structure optimized for high-voltage ruggedness and low dynamic losses. Its gate threshold voltage (1.9–5.0 V) and negative gate drive compatibility (V_GS = –5V) enable stable operation under noisy high-dv/dt conditions in hard-switched topologies.

The device integrates a fast, low-loss intrinsic body diode with Q_rr = 88 nC and I_RRM = 4.0 A, eliminating need for external freewheeling diodes in bridge configurations. Its short-circuit withstand time of 3.0 µs at V_DS = 960V supports reliable protection in motor drive fault conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - Enables use in 1000V-class DC bus systems (e.g., PV string inputs, EV fast-charger front ends).
R_DS(on)	180 mΩ typ. @ V_GS = 20V - Delivers low conduction loss at rated current; increases only ~1.4× from 25°C to 150°C per Figure 1-5.
I_D (T_C = 25°C)	21 A - Supports high-power density designs without forced air cooling in industrial motor drives.
Q_G	36 nC - Enables efficient gate driving with standard 1–2 W drivers; low ESR (3.15 Ω) reduces gate loop oscillation risk.
t_rr	28 ns - Minimizes reverse recovery loss and EMI in synchronous rectification and half-bridge ZVS applications.
T_J(max)	175 °C - Allows operation in compact heatsink designs with elevated ambient temperatures (e.g., under-hood EV systems).
E_off	24 µJ @ V_DS = 800V - Low turn-off energy enables >100 kHz switching in LLC resonant converters without excessive thermal penalty.

Pinout & Package

MSC180SMA120B uses the industry-standard TO-247-3L package with isolated tab (backside drain). Thermal pad dimensions are 16.25–17.65 mm × 13.10–14.50 mm; mounting torque is 0.8 N·m for M3 screw.

Pin/Terminal	Circuit Role	Design Meaning
Terminal 1 (Lead)	GATE	Control input; accepts –5V/20V drive; low C_iss (481 pF) and C_rss (4.0 pF) reduce Miller effect.
Terminal 2 (Backside)	DRAIN	High-side switch node; electrically connected to metal tab; requires insulated mounting for floating applications.
Terminal 3 (Lead)	SOURCE	Power return path; referenced to gate drive ground; low-inductance layout critical for dI/dt immunity.

Key Features

Feature	Design Value
Low gate charge & capacitance	Q_G = 36 nC, C_iss = 481 pF - Reduces driver power requirement and improves switching speed control.
Fast body diode	t_rr = 28 ns, Q_rr = 88 nC - Enables zero-voltage switching in phase-shifted full-bridge and reduces snubber losses.
High-temperature operation	T_J(max) = 175 °C - Permits smaller heatsinks and higher power density in space-constrained enclosures.
Avalanche ruggedness	E_AS = 100 mJ - Withstands repetitive overvoltage transients without derating in unclamped inductive switching.
Low R_DS(on) tempco	R_DS(on) increases only ~1.4× from 25°C to 150°C - Maintains predictable conduction loss across operating range.

Applications

Photovoltaic Inverter	EV Onboard Charger
Use Scenario: Three-phase DC–AC conversion stage handling 10–25 kW solar array output with MPPT tracking. IC Role / Device Role / Timing Role: High-side and low-side switching element in NPC or T-type inverter leg; switched at 16–32 kHz. Use Value: 1200V rating accommodates 1500V DC input; low E_off and t_rr reduce switching losses by >35% vs. Si IGBTs at same power level.	Use Scenario: AC–DC PFC and DC–DC isolation stages in 11–22 kW bidirectional OBC for Level 2 charging. IC Role / Device Role / Timing Role: Active clamp switch and synchronous rectifier in CLLC resonant converter; driven at 100–300 kHz. Use Value: Fast body diode eliminates need for discrete Schottky; low C_oss (47 pF) enables soft-switching over wide load range.
Industrial Motor Drive	Induction Heating System
Use Scenario: 15–30 kW variable-frequency drive for HVAC compressors or pumps operating in harsh factory environments. IC Role / Device Role / Timing Role: Output stage switch in 6-pack IGBT replacement module; operated with active short-circuit protection. Use Value: 3.0 µs SCWT allows robust hardware-based fault response; 175 °C T_J(max) sustains operation during transient overloads.	Use Scenario: 10–50 kW resonant inverter powering induction cooktops or metal melting furnaces. IC Role / Device Role / Timing Role: Half-bridge switch in series-resonant topology; subjected to high dv/dt (>50 V/ns) and repetitive avalanche stress. Use Value: Superior avalanche ruggedness (E_AS = 100 mJ) prevents failure during coil detuning events; low Q_GD/Q_GS ratio improves gate control margin.

Photovoltaic Inverter

EV Onboard Charger

Use Scenario: Three-phase DC–AC conversion stage handling 10–25 kW solar array output with MPPT tracking.

IC Role / Device Role / Timing Role: High-side and low-side switching element in NPC or T-type inverter leg; switched at 16–32 kHz.

Use Value: 1200V rating accommodates 1500V DC input; low E_off and t_rr reduce switching losses by >35% vs. Si IGBTs at same power level.

Use Scenario: AC–DC PFC and DC–DC isolation stages in 11–22 kW bidirectional OBC for Level 2 charging.

IC Role / Device Role / Timing Role: Active clamp switch and synchronous rectifier in CLLC resonant converter; driven at 100–300 kHz.

Use Value: Fast body diode eliminates need for discrete Schottky; low C_oss (47 pF) enables soft-switching over wide load range.

Industrial Motor Drive

Induction Heating System

Use Scenario: 15–30 kW variable-frequency drive for HVAC compressors or pumps operating in harsh factory environments.

IC Role / Device Role / Timing Role: Output stage switch in 6-pack IGBT replacement module; operated with active short-circuit protection.

Use Value: 3.0 µs SCWT allows robust hardware-based fault response; 175 °C T_J(max) sustains operation during transient overloads.

Use Scenario: 10–50 kW resonant inverter powering induction cooktops or metal melting furnaces.

IC Role / Device Role / Timing Role: Half-bridge switch in series-resonant topology; subjected to high dv/dt (>50 V/ns) and repetitive avalanche stress.

Use Value: Superior avalanche ruggedness (E_AS = 100 mJ) prevents failure during coil detuning events; low Q_GD/Q_GS ratio improves gate control margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0065120K (Wolfspeed)	R_DS(on) = 65 mΩ @ 20V; lower voltage rating (1200V same), but higher current rating (32 A @ 25°C); TO-247-4L with Kellogg source.	Better suited for paralleling due to 4L layout; requires different gate drive sequencing for source sensing.	Select when higher current density and lower conduction loss are prioritized over cost and layout simplicity.
STP180N120K6 (STMicroelectronics)	R_DS(on) = 180 mΩ @ 20V; identical voltage/current specs; slightly higher Q_G (42 nC) and slower t_rr (35 ns); AEC-Q101 qualified.	Stronger automotive qualification pedigree; tighter V_GS(th) distribution (2.5–4.5 V) improves gate drive margin in noisy environments.	Select for automotive-grade production where long-term supply assurance and extended qualification evidence are required.

Compared with C3M0065120K and STP180N120K6, MSC180SMA120B offers the lowest total gate charge (36 nC) and fastest body diode (28 ns t_rr), making it optimal for high-frequency resonant converters where switching loss dominates; its TO-247-3L footprint simplifies PCB redesign versus 4L alternatives.

Availability

MSC180SMA120B is available at Aetrix Electronics and suitable for photovoltaic inverters, EV onboard chargers, and industrial motor drives requiring stable component supply, long lifecycle support, and traceable sourcing.

Supply support for MSC180SMA120B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology is a global semiconductor company specializing in microcontrollers, analog devices, FPGAs, and power semiconductors, with headquarters in Chandler, Arizona.

The MSC180SMA120B belongs to Microchip's mSiC™ family of silicon carbide power MOSFETs, engineered specifically for high-efficiency, high-reliability power conversion in renewable energy, transportation, and industrial automation systems.

FAQ

What is the maximum gate-source voltage rating for MSC180SMA120B?

The absolute maximum gate-source voltage for MSC180SMA120B is –10 V to +23 V under steady-state conditions, with transient rating up to –12 V/+25 V. This allows robust negative gate bias (–5 V) to prevent spurious turn-on in high-noise environments like motor drives. The device is characterized for dynamic operation at V_GS = –5V/20V, and exceeding these limits risks permanent gate oxide damage. Always reference the latest DS00003858D revision for updated stress limits.

Does MSC180SMA120B require an external freewheeling diode in bridge configurations?

No, MSC180SMA120B does not require an external freewheeling diode in bridge configurations due to its fast, reliable intrinsic body diode with t_rr = 28 ns and Q_rr = 88 nC. This feature is explicitly validated in the datasheet's Body Diode Characteristics table and enables synchronous rectification in half-bridge and full-bridge topologies. However, system-level testing under actual load conditions (e.g., dI/dt = –2400 A/µs) is recommended to confirm performance in your specific layout.

What is the thermal resistance from junction to case (R_θJC) for MSC180SMA120B?

The junction-to-case thermal resistance (R_θJC) for MSC180SMA120B is 0.79 °C/W (typical) and 1.02 °C/W (maximum), measured under standard test conditions per JEDEC JESD51-14. This value assumes proper mounting with thermal interface material and 0.8 N·m screw torque on the TO-247 tab. Actual board-level R_θJA depends on heatsink design, airflow, and PCB copper area, and must be verified via thermal simulation or measurement.

Is MSC180SMA120B qualified for automotive applications?

An AEC-Q101 qualified version of MSC180SMA120B is available, as stated in the Features section of the datasheet. This qualification covers stress tests including HTGB, HTRB, UHAST, and temperature cycling, confirming suitability for automotive powertrain and charging systems. However, the base part number MSC180SMA120B itself is not automatically qualified-designers must specify the AEC-Q101 variant (e.g., MSC180SMA120B-AQ) when ordering for automotive use.

How does the R_DS(on) of MSC180SMA120B change with temperature?

The R_DS(on) of MSC180SMA120B increases with junction temperature, but exhibits superior stability compared to silicon MOSFETs: at V_GS = 20V and I_D = 8A, R_DS(on) rises only ~1.4× from 25°C to 150°C (per Figure 1-5). This near-linear positive temperature coefficient enables inherent current sharing in paralleled devices and simplifies thermal management in high-power designs.

MSC180SMA120B Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 20V

Rds On (Max) @ Id, Vgs:: 225mOhm @ 8A, 20V

Vgs(th) (Max) @ Id:: 4.5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 20 V

Vgs (Max):: +23V, -10V

Input Capacitance (Ciss) (Max) @ Vds:: 530 pF @ 1000 V

FET Feature:: -

Power Dissipation (Max):: 147W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

MSC180SMA120B FAQ

1.How can I place an order for MSC180SMA120B through Aetrix?

Please submit a Request for Quotation (RFQ) for MSC180SMA120B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MSC180SMA120B reliable?

The price and inventory of MSC180SMA120B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MSC180SMA120B is usually 5 days.

3.What payment methods are accepted for MSC180SMA120B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MSC180SMA120B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MSC180SMA120B?

MSC180SMA120B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MSC180SMA120B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MSC180SMA120B?

For technical support, including MSC180SMA120B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MSC180SMA120B requirements.

6.How does Aetrix verify that MSC180SMA120B is sourced from the original manufacturer or authorized distributors?

All MSC180SMA120B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MSC180SMA120B meets industry standards.

7.What is the process for return or replacement of MSC180SMA120B?

All MSC180SMA120B units undergo pre-shipment inspection (PSI). If there is an issue with MSC180SMA120B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MSC180SMA120B part is unused and in its original packaging.

Return procedure for MSC180SMA120B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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