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Microchip Technology MSCSM120DDUM16TBL3NG
- Part No.:
- MSCSM120DDUM16TBL3NG
- Manufacturer:
- Microchip Technology
- Category:
- FET, MOSFET Arrays
- Package:
- Module
- Datasheet:
-
MSCSM120DDUM16TBL3NG.pdf
- Description:
- MOSFET 4N-CH 1200V 150A
- Quantity:
- Payment:
- Shipping:
Inventory:9,089
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Product details
Overview
MSCSM120DDUM16TBL3NG from Microchip Technology is a double-dual common-source silicon carbide (SiC) MOSFET power module rated for 1200 V, 150 A continuous drain current at 25 °C, with 16 mΩ typical RDS(on) and integrated NTC thermistor for junction temperature monitoring - deployed in high-frequency, high-efficiency AC switches and industrial power converters.
For engineers reviewing the MSCSM120DDUM16TBL3NG datasheet, MSCSM120DDUM16TBL3NG pinout, MSCSM120DDUM16TBL3NG application, or MSCSM120DDUM16TBL3NG equivalent, this page delivers verified electrical specs, thermal performance data, Kelvin-source gate drive support, isolation-rated package details, and real-world substitution guidance for SiC-based power system design.
Technical Context
This device integrates two independent SiC MOSFET pairs in a common-source configuration within a single isolated module, enabling half-bridge or dual-phase topologies without external source node interconnection. Each SiC MOSFET exhibits ultra-low gate charge (464 nC), fast switching (td(on) = 30 ns, tf = 25 ns), and low output capacitance (Coss = 540 pF) to minimize switching losses at frequencies up to 140 kHz under hard-switching conditions.
Thermal management is enhanced by a Si3N4 substrate with thick copper layers and direct-mount heatsink interface (RthJH = 0.268 °C/W), while internal Kelvin source terminals decouple gate drive return from high-current source paths to suppress gate oscillation and improve switching stability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - supports DC-link voltages up to 800 V in 3-level NPC or 2-level inverters with 50% voltage margin. |
| ID (continuous) | 150 A @ TC = 25 °C - enables high-power density designs with reduced parallel device count in motor drives and UPS systems. |
| RDS(on) | 16 mΩ max @ TJ = 25 °C - reduces conduction loss to ≤192 W at 150 A, critical for >99% efficiency targets in high-frequency PFC stages. |
| Qg / Qgd | 464 nC / 100 nC - enables gate drive optimization with low RG(off) = 2.4 Ω to balance Eoff and dv/dt control in 600–800 V bus applications. |
| RthJH | 0.268 °C/W - allows direct mounting to liquid-cooled heatsinks without thermal interface material, simplifying thermal stack-up. |
| VISOL | 2500 V RMS - provides reinforced isolation between power terminals and case, meeting IEC 61800-5-1 requirements for industrial drives. |
| NTC R25 | 50 kΩ ±5% - enables accurate junction temperature sensing via standard ADC circuits without calibration overhead. |
Pinout & Package
MSCSM120DDUM16TBL3NG uses a baseless, isolated power module package with solderable terminals and M3 mounting screw holes. Dimensions and terminal layout conform to Microchip's standard double-dual common-source outline per DS00004653A-page 10.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1, P2 | High-side drain (D1, D2) | Parallel-connected drains for first SiC MOSFET pair; rated for full 1200 V blocking and 150 A current sharing. |
| N1, N2 | Low-side drain (D3, D4) | Parallel-connected drains for second SiC MOSFET pair; electrically isolated from P1/P2 terminals. |
| S1K, S2K | Kelvin source (S1, S2) | Dedicated low-current source returns for gate drivers - eliminates source inductance impact on switching waveform fidelity. |
| S1, S2 | Main source (S1, S2) | High-current source nodes tied internally to respective MOSFET sources; used for power return path and thermal anchoring. |
| G1, G2, G3, G4 | Gates (Q1–Q4) | Four independent gate terminals supporting discrete gate resistor placement per switch for optimized turn-on/turn-off timing. |
| THERM+ | NTC anode | Connects to integrated 50 kΩ NTC thermistor; used with external bias resistor for linearized temperature readout. |
| THERM− | NTC cathode | Common reference node for temperature sensing circuit; internally connected to source potential of Q1/Q2 pair. |
Key Features
| Feature | Design Value |
|---|---|
| Kelvin source terminals | Eliminates source inductance-induced gate ringing during hard commutation, enabling stable 100+ kHz operation without snubbers. |
| Si3N4 ceramic substrate + thick copper | Reduces thermal resistance by 35% vs. Al2O3-based modules, sustaining 175 °C junction temperature under full load. |
| Integrated NTC thermistor (R25 = 50 kΩ) | Provides direct junction temperature feedback with ±2 °C accuracy across –55 to 125 °C case range, eliminating external sensor placement error. |
| Isolated package (2500 V RMS) | Enables direct mounting to grounded heatsinks in high-voltage systems without insulation pads or bushings, reducing assembly steps. |
| Solderable power and signal terminals | Supports automated reflow soldering of both high-current (≥150 A) and low-current (≤100 mA) connections on same PCB layer. |
Applications
| Industrial Motor Drives | Three-Phase PFC Rectifiers |
|---|---|
|
Use Scenario: 15–50 kW variable-frequency drives for HVAC compressors and pump systems operating at 10–20 kHz switching frequency. IC Role / Device Role / Timing Role: Dual half-bridge power stage using two MSCSM120DDUM16TBL3NG modules - each handling one phase leg with independent gate control and Kelvin-source feedback. Use Value: Enables >98.5% system efficiency at full load due to 16 mΩ RDS(on) and <2.4 mJ Eon, reducing heatsink size by 40% versus silicon IGBT alternatives. |
Use Scenario: Active front-end rectifiers in uninterruptible power supplies (UPS) requiring bidirectional power flow and unity power factor at 16 kHz. IC Role / Device Role / Timing Role: Core switching element in three-level T-type topology - four SiC MOSFETs per module configured as split-leg switches with shared source nodes. Use Value: Achieves <1.5% THD input current and <300 µs overvoltage recovery time due to fast trr = 90 ns body diode and low Crss = 50 pF. |
| Renewable Energy Inverters | High-Reliability AC Switches |
|
Use Scenario: 25–100 kW string inverters for solar PV farms operating in desert environments with ambient temperatures up to 65 °C. IC Role / Device Role / Timing Role: DC–AC H-bridge stage with dual MSCSM120DDUM16TBL3NG modules per phase - leveraging extended TJ range (–55 to 175 °C) and integrated thermistor for derating control. Use Value: Maintains 99.1% peak efficiency across 25–100% load range and extends field lifetime by 3× vs. Si-based modules due to lower thermal cycling stress. |
Use Scenario: Solid-state contactors and static transfer switches in data center power distribution units requiring zero-crossing turn-on and <100 µs fault clearing. IC Role / Device Role / Timing Role: Bidirectional AC switching element in back-to-back configuration - using internal body diodes (VSD = 4.0 V) for natural commutation during zero-voltage transitions. Use Value: Delivers <500 k-cycle mechanical life equivalent with no contact wear, enabled by low Eoff = 1.3 mJ and 300 A pulsed current rating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC MOSFET power module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CAB400M12XM3 | 1200 V / 400 A single-channel module; higher current rating but no Kelvin source; RDS(on) = 10.5 mΩ. | Requires external Kelvin sensing; better suited for single-phase high-current DC–DC where gate drive simplicity outweighs switching fidelity needs. | Select when maximum current density is prioritized over precise gate control and thermal monitoring integration. |
| FF6MR12W2M1_B11 | 1200 V / 300 A six-pack module; includes integrated gate driver IC and desaturation protection; RDS(on) = 13.5 mΩ. | Targeted at plug-and-play inverter designs; lacks user-configurable gate resistors and independent thermistor access. | Choose when rapid system prototyping is required and gate drive autonomy justifies added cost and reduced layout flexibility. |
Compared with CAB400M12XM3 and FF6MR12W2M1_B11, MSCSM120DDUM16TBL3NG offers unique Kelvin-source terminals and standalone NTC integration - making it optimal for custom gate drive designs demanding waveform integrity and real-time junction temperature tracking without auxiliary components.
Availability
MSCSM120DDUM16TBL3NG is available at Aetrix Electronics and suitable for industrial motor drives, three-phase PFC rectifiers, and renewable energy inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for MSCSM120DDUM16TBL3NG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology is a global semiconductor company specializing in microcontrollers, analog devices, and power electronics - delivering high-reliability solutions for industrial, automotive, and aerospace markets.
MSCSM120DDUM16TBL3NG belongs to Microchip's MSCSM family of SiC power modules, engineered specifically for high-efficiency, high-frequency power conversion systems where thermal performance, switching fidelity, and integration density are critical.
FAQ
What is the maximum continuous drain current rating for MSCSM120DDUM16TBL3NG?
The MSCSM120DDUM16TBL3NG is rated for 150 A continuous drain current at case temperature (TC) = 25 °C and 120 A at TC = 80 °C. These values apply per SiC MOSFET channel, and the module contains four independently controllable channels. Derating must follow the RthJH = 0.268 °C/W curve and maximum TJ = 175 °C limit.
Does MSCSM120DDUM16TBL3NG include an integrated temperature sensor?
Yes, MSCSM120DDUM16TBL3NG integrates an NTC thermistor with R25 = 50 kΩ ±5% and B25/85 = 3952 K. The thermistor is electrically referenced to the source of the first SiC MOSFET pair and accessible via dedicated THERM+ and THERM− terminals for direct junction temperature monitoring.
What is the gate threshold voltage (VGS(th)) specification for MSCSM120DDUM16TBL3NG?
The gate threshold voltage for MSCSM120DDUM16TBL3NG is specified as 1.8 V minimum and 2.8 V maximum, measured at VGS = VDS and ID = 6 mA. This parameter ensures reliable turn-on across temperature and process variation, supporting robust gate drive design with 20 V nominal gate voltage.
Can MSCSM120DDUM16TBL3NG be mounted directly to a heatsink without insulating hardware?
Yes, MSCSM120DDUM16TBL3NG features reinforced electrical isolation (VISOL = 2500 V RMS) and is designed for direct mounting to grounded heatsinks. Mounting torque must be controlled to 0.7–0.9 N·m on M3 screws to ensure optimal thermal contact without substrate cracking.
What is the typical reverse recovery charge (Qrr) of the body diode in MSCSM120DDUM16TBL3NG?
The typical reverse recovery charge (Qrr) of the body diode in MSCSM120DDUM16TBL3NG is 1100 nC, measured at ISD = 80 A, VR = 800 V, and diF/dt = 2000 A/µs with VGS = –5 V. This low Qrr contributes to minimal switching loss in synchronous rectification and AC switching applications.
MSCSM120DDUM16TBL3NG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- Module
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Silicon Carbide (SiC)
- Configuration:
- 4 N-Channel, Common Source
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:
- 150A
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id:
- 2.8V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs:
- 464nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6040pF @ 1000V
- Power - Max:
- 560W
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- -
MSCSM120DDUM16TBL3NG FAQ
1.How can I place an order for MSCSM120DDUM16TBL3NG through Aetrix?
Please submit a Request for Quotation (RFQ) for MSCSM120DDUM16TBL3NG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MSCSM120DDUM16TBL3NG reliable?
The price and inventory of MSCSM120DDUM16TBL3NG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MSCSM120DDUM16TBL3NG is usually 5 days.
3.What payment methods are accepted for MSCSM120DDUM16TBL3NG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MSCSM120DDUM16TBL3NG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MSCSM120DDUM16TBL3NG?
MSCSM120DDUM16TBL3NG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MSCSM120DDUM16TBL3NG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MSCSM120DDUM16TBL3NG?
For technical support, including MSCSM120DDUM16TBL3NG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MSCSM120DDUM16TBL3NG requirements.
6.How does Aetrix verify that MSCSM120DDUM16TBL3NG is sourced from the original manufacturer or authorized distributors?
All MSCSM120DDUM16TBL3NG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MSCSM120DDUM16TBL3NG meets industry standards.
7.What is the process for return or replacement of MSCSM120DDUM16TBL3NG?
All MSCSM120DDUM16TBL3NG units undergo pre-shipment inspection (PSI). If there is an issue with MSCSM120DDUM16TBL3NG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MSCSM120DDUM16TBL3NG part is unused and in its original packaging.
Return procedure for MSCSM120DDUM16TBL3NG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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