Renesas NE5550279A-T1A-A

Overview

NE5550279A-T1A-A from Renesas Electronics is a silicon power LDMOS FET designed for VHF–UHF Class-AB RF power amplification, delivering 33.0 dBm typical output power at 460 MHz with 68% typical power-added efficiency and 22.5 dB linear gain under 7.5 V drain bias and 40 mA quiescent drain current - deployed in land-mobile radio transmitters and public safety repeaters.

For engineers reviewing the NE5550279A-T1A-A datasheet, NE5550279A-T1A-A pinout, NE5550279A-T1A-A application, or NE5550279A-T1A-A equivalent, key selection criteria include its 30 V V_DS rating, 20.0 °C/W channel-to-case thermal resistance, 79A surface-mount package with source-gate-drain terminal layout, and verified performance across 150–900 MHz band systems requiring high linearity and ESD robustness.

Technical Context

This LDMOS transistor operates in Class-AB mode with gate threshold voltage of 1.15–2.25 V and transconductance of 0.36–0.58 S, optimized for fixed-bias RF power stages where stable DC operating point (I_DS = 0.4 A typ.) and low gate leakage (<100 nA) ensure repeatable RF performance. Its 25–38 V breakdown voltage supports headroom for transient voltage spikes in mobile radio PA designs.

The device uses a thermally enhanced 79A package with exposed drain pad for direct PCB heat sinking, enabling 6.25 W total power dissipation at T_C = 25°C. RF characterization is performed at 460 MHz using a defined 50 Ω test circuit with specified external matching components, and S-parameters are available in Touchstone (.s2p) format for simulation integration.

Key Specifications

Pinout & Package

The NE5550279A-T1A-A is housed in the 79A surface-mount package: 5.7 mm × 4.4 mm body with 0.9 mm height, featuring an exposed drain pad on the bottom for thermal conduction and three terminals - Source (left), Gate (center), Drain (right) - visible in bottom-view orientation per Renesas package drawing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF158G1 and PD57018-E, the NE5550279A-T1A-A offers superior thermal efficiency (20.0 vs. 35.0 °C/W), tighter V_th distribution for simplified bias design, and proven 150–900 MHz interoperability - making it optimal for cost-sensitive, thermally constrained VHF/UHF repeater and mobile radio PA stages.

Availability

NE5550279A-T1A-A is available at Aetrix Electronics and suitable for land-mobile radio systems, public safety repeaters, and industrial telemetry equipment requiring stable component supply, RoHS-compliant packaging, and long-term production continuity.

Supply support for NE5550279A-T1A-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and RF solutions for industrial, automotive, and communications markets.

The NE5550279A-T1A-A belongs to Renesas' silicon LDMOS RF power transistor product line, engineered specifically for high-efficiency, high-linearity VHF–UHF transmitter amplifiers in mission-critical communication infrastructure.

FAQ

What is the maximum continuous drain current rating for NE5550279A-T1A-A?

The NE5550279A-T1A-A has a maximum continuous drain current (I_DS) rating of 0.6 A at T_A = 25°C. In pulsed operation (50% duty cycle), it supports up to 1.2 A. This rating is validated under the absolute maximum conditions and must be derated with increasing case temperature per the thermal resistance specification of 20.0 °C/W.

Does NE5550279A-T1A-A require external gate protection in typical radio PA layouts?

Yes, NE5550279A-T1A-A requires external gate protection. The datasheet explicitly notes high ESD tolerance but also includes handling cautions for electrostatic discharge. A series gate resistor (e.g., 10–100 Ω) and parallel RF choke or TVS diode are recommended to suppress fast transients and prevent gate oxide damage during board assembly or field operation.

Can NE5550279A-T1A-A operate reliably at 900 MHz with full-rated output power?

Yes, NE5550279A-T1A-A is qualified for 900 MHz band radio systems per its Applications section. While the primary RF characterization is at 460 MHz, Renesas specifies performance across 150–900 MHz. Full-rated output requires retuning the external matching network - the test circuit schematic and PCB layout guidelines on page 3 provide the foundation for 900 MHz adaptation.

What is the gate-to-source leakage current specification for NE5550279A-T1A-A?

The gate-to-source leakage current (I_GSS) for NE5550279A-T1A-A is specified as ≤100 nA at V_GS = 6.0 V and T_A = 25°C. This low leakage ensures stable DC bias point over time and temperature, reducing drift in Class-AB amplifier quiescent current and supporting consistent RF performance in unattended repeater installations.

Is the 79A package of NE5550279A-T1A-A compatible with standard reflow soldering profiles?

Yes, the 79A package of NE5550279A-T1A-A is qualified for infrared reflow soldering per Renesas' recommended conditions: peak package surface temperature ≤260°C for ≤10 seconds, with time above 220°C limited to ≤60 seconds. The package is Pb-free and complies with JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for standard handling.