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Renesas NEM090603M-28-A
- Part No.:
- NEM090603M-28-A
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
NEM090603M-28-A.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:251
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Product details
Overview
NEM090603M-28-A from Renesas Electronics is an N-channel enhancement-mode lateral diffused MOS FET optimized for UHF-band single-end power amplifiers in 885–1000 MHz systems, delivering 75 W typical 1 dB compression output power at 960 MHz with 28 V drain supply, 550 mA quiescent drain current, and 54% typical drain efficiency - deployed in digital cellular base station final-stage PAs and UHF TV transmitters.
For engineers reviewing the NEM090603M-28-A datasheet, NEM090603M-28-A pinout, NEM090603M-28-A application, or NEM090603M-28-A equivalent, key selection criteria include its 65 V VDS rating, 1.0 °C/W channel-to-case thermal resistance, integrated ESD protection, triple-layer Al-Si metallization, and compatibility with Pb-free 3M (T-91M) surface-mount packaging requiring heatsink mounting per M3 screw torque spec.
Technical Context
This LDMOS transistor uses Renesas' NEWMOS technology featuring a tungsten silicide (WSi) gate structure and nitride surface passivation to enhance hot-carrier immunity and long-term reliability under high-power RF operation. Its lateral diffusion design enables stable gain and linearity across UHF frequencies without requiring external bias stabilization networks.
The device operates as a Class AB amplifier with fixed gate bias (VGS = 2.6–3.6 V), supporting analog/digital TV and multi-standard cellular (GSM/EDGE/D-AMPS/PDC/N-CDMA) base station applications. It exhibits −31 dBc third-order intermodulation distortion at 45 dBm two-tone output and maintains thermal stability up to 200 °C channel temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Max | 65 V - supports 28 V nominal operation with 130% voltage margin for transient spikes in base station PA stages |
| PO(1 dB) Typ | 75 W @ 960 MHz - delivers sufficient headroom for 45–48 dBm linear output in multi-carrier GSM/EDGE deployments |
| Drain Efficiency ηd | 54% typ @ 960 MHz - reduces thermal load and DC power consumption in high-duty-cycle broadcast transmitters |
| Rth(ch-c) | 1.0 °C/W - enables effective thermal management using standard copper heatsinks without forced air cooling |
| IM3 | −31 dBc @ 2×45 dBm - meets spectral mask requirements for adjacent channel leakage ratio (ACLR) in wideband cellular standards |
| Gain GL | 17.5 dB typ @ 960 MHz - provides single-stage amplification capability, minimizing cascade complexity in PA modules |
| Vth | 2.2 V typ - ensures predictable turn-on behavior and stable quiescent current setting across temperature and process variation |
Pinout & Package
Package: 3M (T-91M), Pb-free hollow plastic surface-mount package with flanged metal tab for direct heatsink attachment. Dimensions: 20.22 mm × 14.27 mm × 3.5 mm (L×W×H), flange thickness 2.04 mm, mounting holes M3-compatible.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source | Common reference node for RF and DC return path; electrically connected to flange and heatsink - requires low-inductance grounding |
| 2 | Drain | High-current RF output terminal; carries full RF output power and DC supply current - routed over ground plane with minimal trace length |
| 3 | Gate | RF input control terminal; sensitive to ESD and impedance mismatch - requires 50 Ω matching network and DC blocking capacitor |
Key Features
| Feature | Design Value |
|---|---|
| NEWMOS WSi gate technology | Enables stable transconductance and reduced gate resistance for improved high-frequency gain flatness and thermal robustness |
| Nitride surface passivation | Suppresses interface trap generation under high-field RF stress, extending operational lifetime in continuous-wave transmitter duty cycles |
| Triple-layer Al-Si metallization | Provides low-resistance, electromigration-resistant interconnects capable of sustaining >6 A pulsed drain current |
| Integrated ESD protection | Withstands ≥2 kV HBM per JESD22-A114 without external clamping - simplifies handling and board-level ESD design |
| Hollow plastic 3M package | Reduces material cost and weight while maintaining mechanical rigidity and thermal conduction via flange-to-heatsink interface |
Applications
| GSM/EDGE Base Station PA | UHF Analog/Digital TV Transmitter |
|---|---|
Use Scenario: Final-stage power amplifier in macrocell BTS operating across 880–960 MHz bands with multi-carrier EDGE modulation. IC Role / Device Role / Timing Role: High-efficiency, high-linearity RF power transistor delivering 45–48 dBm average output with ACLR < −45 dBc. Use Value: Enables single-device 75 W P1dB solution with 54% drain efficiency, reducing thermal subsystem size and DC power supply requirements. | Use Scenario: UHF-band broadcast transmitter PA for terrestrial digital TV (DTTB) and analog NTSC/PAL systems. IC Role / Device Role / Timing Role: Single-ended Class AB final amplifier stage driving 50 Ω antenna load with 960 MHz center frequency. Use Value: Delivers 48.3 dBm typical saturated output with −31 dBc IM3, meeting FCC Part 73 spectral purity requirements without post-filtering. |
| D-AMPS/PDC Cellular Infrastructure | N-CDMA Mobile Network Amplifier |
Use Scenario: Driver or final-stage amplifier in legacy North American TDMA (D-AMPS) and Japanese PDC base stations. IC Role / Device Role / Timing Role: Linear RF power switch operating at 824–894 MHz with 28 V supply and fixed gate bias. Use Value: Provides 17.5 dB small-signal gain and 1.0 °C/W thermal resistance, enabling compact, air-cooled PA module designs. | Use Scenario: Forward-path PA in CDMA2000 1x base station equipment covering 824–894 MHz band. IC Role / Device Role / Timing Role: High-reliability LDMOS transistor with proven HCI immunity for continuous 24/7 operation in outdoor cabinet environments. Use Value: Nitride passivation and WSi gate ensure <1% gain drift after 10,000 hours at Tch = 150 °C, supporting carrier-grade uptime SLAs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6VP2750HR5 | Higher P1dB (75 W @ 2.1 GHz), GaN-on-SiC, 50 V VDS, Rth(ch-c) = 0.45 °C/W | Targets higher-frequency 2.1 GHz WCDMA/LTE infrastructure; requires different gate bias and thermal interface design | Choose for multi-band macrocells needing bandwidth beyond 1 GHz; not drop-in due to voltage, footprint, and thermal interface differences |
| PD85003-E | LDMOS, 30 V VDS, 75 W P1dB @ 945 MHz, Rth(ch-c) = 0.95 °C/W, same 3M package outline | Optimized for European DVB-T and TETRA systems; slightly lower VGS threshold (2.0 V) and higher IDSS leakage | Consider for drop-in replacement where 30 V rail and identical mechanical fit are acceptable; verify gate drive compliance and IM3 performance at target frequency |
Compared with MRF6VP2750HR5 and PD85003-E, the NEM090603M-28-A offers best-in-class cost-performance balance for 885–1000 MHz UHF infrastructure with proven field reliability, moderate thermal resistance, and simplified 28 V bias architecture - making it ideal for cost-sensitive, volume-deployed broadcast and legacy cellular systems.
Availability
NEM090603M-28-A is available at Aetrix Electronics and suitable for digital cellular base station power amplifiers, UHF TV broadcast transmitters, and legacy wireless infrastructure systems requiring stable component supply, long-lifecycle support, and RoHS-compliant Pb-free packaging.
Supply support for NEM090603M-28-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and RF solutions for industrial, automotive, and communications markets.
The NEM090603M-28-A belongs to Renesas' Compound Semiconductor Devices Division LDMOS product line, engineered specifically for high-efficiency, high-reliability UHF power amplification in telecom infrastructure and broadcast equipment.
FAQ
What is the maximum safe operating drain-to-source voltage for NEM090603M-28-A?
The absolute maximum drain-to-source voltage (VDS) for NEM090603M-28-A is 65 V at TA = +25°C. Operation must remain within this limit to prevent avalanche breakdown or permanent damage. The recommended operating range specifies 28 V nominal with 30 V maximum, providing 115% margin for transient surges in real-world base station power supplies. Exceeding 65 V voids reliability guarantees and may cause immediate failure of the NEM090603M-28-A.
Does NEM090603M-28-A require external ESD protection circuitry on the PCB?
No, the NEM090603M-28-A integrates on-chip ESD protection rated to ≥2 kV per Human Body Model (HBM), eliminating the need for discrete TVS diodes or RC filters at the gate or drain terminals during normal handling and operation. However, proper PCB layout - including short gate traces, grounded flange connection, and controlled-impedance 50 Ω input matching - remains essential to preserve the built-in ESD robustness of the NEM090603M-28-A.
What thermal interface material is recommended when mounting NEM090603M-28-A to a heatsink?
Renesas recommends direct metal-to-metal contact between the NEM090603M-28-A's flange and a flat heatsink surface (flatness < ±10 μm), using M3 screws torqued to 53 N·cm. Thermal interface materials (TIMs) are not required if surface finish and flatness meet spec; however, if used, a non-silicone, low-outgassing, high-conductivity grease (e.g., Wakefield 120 or Bergquist Sil-Pad 1000) may be applied sparingly to fill microscopic voids - excessive TIM increases Rth(ch-c) and degrades the NEM090603M-28-A's 1.0 °C/W rating.
Can NEM090603M-28-A operate reliably at 524 MHz for VHF broadcast applications?
Yes, the NEM090603M-28-A is characterized down to 512 MHz and demonstrates usable performance at 524 MHz: typical PO(1 dB) = 48.3 dBm, GL = 16.5 dB, and ηd = 52% under VDS = 28 V and IDset = 550 mA. While optimized for 885–1000 MHz, its broadband LDMOS structure supports VHF operation with verified intermodulation and thermal stability - confirmed by published S-parameter data and typical curves in the NEM090603M-28-A datasheet.
Is the NEM090603M-28-A pin-compatible with earlier NEC part numbers like NEM090603M-28?
Yes, the NEM090603M-28-A is the Pb-free, ESD-protective-tray packaged version of the original NEM090603M-28, sharing identical die, pinout (Source–Drain–Gate), 3M (T-91M) package dimensions, and electrical specifications. The "-A" suffix denotes RoHS compliance and updated packaging - no PCB layout or schematic changes are needed when upgrading from NEM090603M-28 to NEM090603M-28-A.
NEM090603M-28-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
NEM090603M-28-A FAQ
1.How can I place an order for NEM090603M-28-A through Aetrix?
Please submit a Request for Quotation (RFQ) for NEM090603M-28-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NEM090603M-28-A reliable?
The price and inventory of NEM090603M-28-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NEM090603M-28-A is usually 5 days.
3.What payment methods are accepted for NEM090603M-28-A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NEM090603M-28-A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NEM090603M-28-A?
NEM090603M-28-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NEM090603M-28-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NEM090603M-28-A?
For technical support, including NEM090603M-28-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NEM090603M-28-A requirements.
6.How does Aetrix verify that NEM090603M-28-A is sourced from the original manufacturer or authorized distributors?
All NEM090603M-28-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NEM090603M-28-A meets industry standards.
7.What is the process for return or replacement of NEM090603M-28-A?
All NEM090603M-28-A units undergo pre-shipment inspection (PSI). If there is an issue with NEM090603M-28-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NEM090603M-28-A part is unused and in its original packaging.
Return procedure for NEM090603M-28-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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