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Diodes Incorporated NMSD200B01-7

Part No.:
NMSD200B01-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixNMSD200B01-7.pdf
Description:
MOSFET N-CH 60V 200MA SOT363
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,333

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Product details

Overview

NMSD200B01 from Diodes Incorporated is a dual-function synchronous rectifier IC integrating an ESD-protected N-channel MOSFET (VDSS = 60 V, RDS(ON) = 1.5 Ω @ VGS = 10 V) and a low-VF Schottky diode (VF = 0.37 V @ 20 mA) in a single SOT-363 package. It delivers 200 mA continuous output current and targets DC-DC converter stages in Voltage Regulator Modules (VRMs).

For engineers reviewing the NMSD200B01 datasheet, NMSD200B01 pinout, NMSD200B01 application, or NMSD200B01 equivalent, key selection criteria include integrated MOSFET+Schottky co-location, low conduction loss (RDS(ON) + VF), thermal resistance (RθJA = 625 °C/W), and SOT-363 surface-mount compatibility with automated assembly.

Technical Context

The NMSD200B01 combines two discrete power devices - an ESD-protected N-MOSFET (Q1) and a Schottky barrier diode (D1) - in one monolithic SOT-363 package. Its architecture eliminates external gate drive coordination while preserving independent control of each sub-device's conduction path.

It operates as a synchronous rectification pair: the MOSFET handles primary switching with low RDS(ON) and fast turn-on/turn-off times (td(on) ≤ 20 ns, td(off) ≤ 40 ns), while the Schottky diode provides body-diode redundancy and low forward voltage (VF ≤ 0.6 V @ 200 mA) for reverse recovery immunity.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS60 V - Maximum drain-source blocking capability for VRM high-side or low-side switch node placement
RDS(ON)1.5 Ω @ VGS = 10 V - Enables <150 mW conduction loss at 200 mA, critical for thermally constrained VRM layouts
VF (Schottky)0.37 V @ 20 mA - Reduces forward drop by ~30% vs. standard silicon diodes, lowering heat generation in freewheeling paths
IOUT200 mA continuous - Matches typical current requirements of point-of-load (POL) regulators in compact embedded systems
RθJA625 °C/W - Defines thermal derating on FR-4 PCBs; limits usable power to ~160 mW at TA = 85°C
trr (Schottky)10 ns - Ensures negligible reverse recovery charge in high-frequency (>500 kHz) DC-DC topologies
VGS(th)1.6 V typical - Allows reliable turn-on with standard 3.3 V or 5 V logic-level gate drives without level-shifting

Pinout & Package

Package: SOT-363 - 6-pin surface-mount plastic package with 0.65 mm lead pitch, UL 94V-0 rated molding compound, and matte tin-plated terminals solderable per MIL-STD-202.

Pin/TerminalCircuit RoleDesign Meaning
1MOSFET SourceCommon source node for N-MOSFET; electrically tied to Schottky cathode in internal layout
2MOSFET GateESD-protected control input; accepts 0–20 V gate drive with 1.6 V threshold
3Schottky AnodeFreewheeling current entry point; isolated from MOSFET drain for independent biasing
4MOSFET Drain / Schottky CathodeShared terminal - connects MOSFET drain and Schottky cathode internally; main power output node
5No ConnectInternally unconnected; must remain floating or grounded per layout guidelines to avoid parasitic coupling
6MOSFET SourceRedundant source connection; electrically identical to Pin 1 and used for thermal and current sharing

Key Features

FeatureDesign Value
Integrated ESD-protected N-MOSFETWithstands ±20 V gate-source stress and 1 μA leakage at VGS = 0 V, enabling robust operation in noisy VRM environments
Co-packaged Schottky diode40 V VRRM, 0.37 V VF @ 20 mA, and 10 ns trr - eliminates need for external catch diode in buck converters
Low static conduction lossCombined RDS(ON) + VF yields <0.9 V effective forward drop at 200 mA, reducing I²R heating in POL modules
SOT-363 footprint2.2 × 2.1 mm outline with 0.65 mm pitch - supports high-density PCB layouts and reflow-compatible automated assembly

Applications

Voltage Regulator Module (VRM)Point-of-Load (POL) Converter

Use Scenario: Secondary-side synchronous rectification in 12 V → 3.3 V VRM for CPU/GPU power delivery.

IC Role / Device Role / Timing Role: Dual-function rectifier replacing discrete MOSFET + Schottky pair; operates at 300–600 kHz switching frequency.

Use Value: Reduces component count by 2 devices and PCB area by >30% versus discrete implementation while maintaining <1.25 VDS(on) + VF total drop.

Use Scenario: Output rectification in compact 5 V → 1.8 V POL regulator powering FPGA I/O banks.

IC Role / Device Role / Timing Role: Low-current synchronous rectifier handling up to 200 mA load with minimal thermal rise.

Use Value: Enables use of smaller heatsinking and eliminates reverse recovery spikes that cause EMI in noise-sensitive digital subsystems.

USB-C Power Delivery SinkIndustrial Sensor Node Power Supply

Use Scenario: Buck converter stage regulating 9 V PD input to 3.3 V for USB-C peripheral logic.

IC Role / Device Role / Timing Role: Integrated rectifier managing transient 200 mA peak loads during enumeration and data bursts.

Use Value: ESD protection on gate and low VF prevent latch-up and voltage droop during hot-plug events.

Use Scenario: 24 V → 5 V step-down supply for battery-backed industrial temperature sensor nodes.

IC Role / Device Role / Timing Role: High-reliability rectifier operating continuously at 85°C ambient with full derating.

Use Value: -55°C to +150°C junction rating and halogen-free "Green" construction ensure long-term stability in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2004LKQ-7Single N-MOSFET (60 V, 1.8 Ω), no integrated Schottky diode; AEC-Q101 qualifiedRequires external Schottky for freewheeling; suited for automotive-grade designs needing PPAP supportSelect when automotive qualification and higher gate ruggedness outweigh integration benefit
SBM2040CLT3GStandalone 40 V Schottky diode (0.45 V VF @ 200 mA); no MOSFET functionCannot replace MOSFET switching action; only substitutes diode portion of NMSD200B01Select only for diode-only replacement where MOSFET is separately controlled

Compared with DMN2004LKQ-7 and SBM2040CLT3G, the NMSD200B01 uniquely integrates both functions in one die, reducing BOM count and interconnect parasitics - critical for space-constrained VRMs where layout-induced ringing must be minimized.

Availability

NMSD200B01 is available at Aetrix Electronics and suitable for Voltage Regulator Modules (VRMs), Point-of-Load (POL) converters, and USB-C power delivery sink circuits requiring stable component supply and consistent SOT-363 packaging.

Supply support for NMSD200B01 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management and signal integrity solutions for industrial, computing, and consumer markets.

The NMSD200B01 belongs to Diodes' synchronous rectifier product line, designed specifically to reduce component count and improve thermal performance in compact DC-DC converters used in VRMs and POL applications.

FAQ

What is the maximum continuous current rating for the NMSD200B01?

The NMSD200B01 is rated for 200 mA continuous output current under standard conditions (TA = 25°C, FR-4 PCB with 1-inch² 2 oz copper). Derating applies above 25°C ambient, with full derating to zero at 85°C due to its 625 °C/W RθJA.

Can Pin 5 be left unconnected or must it be grounded?

Pin 5 is internally unconnected (NC) and must remain floating or be grounded per Diodes' layout recommendations. Connecting it to a signal net may introduce parasitic coupling or unintended current paths, degrading ESD performance and switching behavior.

How does the integrated Schottky diode interact with the MOSFET during switching transitions?

The Schottky diode (D1) and MOSFET (Q1) share the drain/cathode node (Pin 4) but have independent anode (Pin 3) and gate (Pin 2) terminals. During dead-time, D1 conducts freewheeling current until Q1 turns on; no cross-conduction occurs due to physical isolation of control and power paths.

Is the NMSD200B01 suitable for automotive applications?

The NMSD200B01 is not AEC-Q101 qualified. For automotive use, Diodes recommends contacting their sales team for PPAP-capable alternatives like the DMN2004LKQ-7, which offers equivalent voltage/current specs with full automotive qualification and IATF 16949 manufacturing.

NMSD200B01-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
3Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
50 pF @ 25 V
FET Feature:
Schottky Diode (Isolated)
Power Dissipation (Max):
200mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363

NMSD200B01-7 FAQ

1.How can I place an order for NMSD200B01-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for NMSD200B01-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NMSD200B01-7 reliable?

The price and inventory of NMSD200B01-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NMSD200B01-7 is usually 5 days.

3.What payment methods are accepted for NMSD200B01-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NMSD200B01-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NMSD200B01-7?

NMSD200B01-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NMSD200B01-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NMSD200B01-7?

For technical support, including NMSD200B01-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NMSD200B01-7 requirements.

6.How does Aetrix verify that NMSD200B01-7 is sourced from the original manufacturer or authorized distributors?

All NMSD200B01-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NMSD200B01-7 meets industry standards.

7.What is the process for return or replacement of NMSD200B01-7?

All NMSD200B01-7 units undergo pre-shipment inspection (PSI). If there is an issue with NMSD200B01-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NMSD200B01-7 part is unused and in its original packaging.

Return procedure for NMSD200B01-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

NMSD200B01-7 Tags

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