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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP100N04PUK(1)-E1-AY

Name: NP100N04PUK(1)-E1-AY
Brand: Renesas
SKU: NP100N04PUK(1)-E1-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP100N04PUK(1)-E1-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: NP100N04PUK(1)-E1-AY.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

NP100N04PUK(1)-E1-AY from Renesas Electronics is an N-channel power MOSFET in TO-263 (MP-25ZP) package, designed for high-current DC switching in automotive and industrial power stages. It delivers R_DS(on) = 2.3 mΩ max at V_GS = 10 V and I_D = 50 A, supports ±100 A DC drain current, and is AEC-Q101 qualified for under-hood motor control and battery disconnect applications.

For engineers reviewing the NP100N04PUK(1)-E1-AY datasheet, NP100N04PUK(1)-E1-AY pinout, NP100N04PUK(1)-E1-AY application, or NP100N04PUK(1)-E1-AY equivalent, key selection criteria include its low R_DS(on), high pulsed current capability (±400 A), avalanche energy rating (185 mJ), thermal resistance (R_th(ch-C) = 0.85 °C/W), and automotive qualification status - all critical for robust 40 V power switching designs.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in synchronous rectification and high-side/low-side configurations. Its gate threshold voltage range (2.0–4.0 V) ensures reliable turn-on with standard 10 V gate drivers, while Q_G = 120 nC max enables efficient drive with moderate gate resistance.

The device integrates a body diode with V_F(S-D) = 1.5 V max at I_F = 100 A and t_rr = 52 ns, supporting freewheeling in inductive loads. Its 40 V V_DSS rating, ±20 V V_GSS, and 175 °C channel temperature rating align with ASIL-B–level power management requirements in 12 V/24 V vehicle systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage for 12 V/24 V automotive battery systems with load dump margin.
R_DS(on) max	2.3 mΩ at V_GS = 10 V, I_D = 50 A - Enables <1 W conduction loss at 100 A, reducing heatsink size.
I_D(DC)	±100 A at T_C = 25 °C - Supports continuous high-current motor phase or battery protection switching.
E_AR	185 mJ - Withstands repetitive inductive energy spikes without failure in solenoid or relay drive circuits.
R_th(ch-C)	0.85 °C/W - Allows direct mounting to cold plates for high-power thermal management in EV auxiliary systems.
Q_G max	120 nC - Compatible with standard gate drivers (e.g., ISO5852S, UCC27531) without excessive drive power.
AEC-Q101	Qualified - Meets stress test requirements for automotive power semiconductors including HTGB, HTRB, and TC.

Pinout & Package

TO-263 (MP-25ZP) surface-mount package with exposed drain tab for thermal and electrical connection. Pin 1: Gate; Pin 2: Drain (tab); Pin 3: Source; Pin 4: Drain (secondary tab). The dual-drain configuration enhances current handling and thermal dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives gate drive signal; requires ≤20 V absolute max to avoid oxide damage.
2 (Drain)	Main current output	Primary high-current path; electrically and thermally connected to metal tab for PCB copper pour.
3 (Source)	Reference return	Serves as local ground reference for gate drive; connects to low-side shunt or controller ground.
4 (Drain)	Secondary current path	Parallel drain terminal to reduce package inductance and improve current sharing in high-frequency PWM.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	2.3 mΩ max enables <2 W conduction loss at 100 A, reducing system thermal budget in compact modules.
Avalanche-rated	185 mJ repetitive avalanche energy allows safe operation during inductive load turn-off without external snubbers.
Automotive-qualified	AEC-Q101 certification confirms reliability for engine control units, battery management, and ADAS power supplies.
Low gate charge	120 nC total gate charge minimizes switching losses and driver stress at 20–100 kHz PWM frequencies.
High pulsed current	±400 A peak current supports short-circuit withstand and cranking pulse conditions in starter systems.

Applications

Electric Power Steering (EPS)	48 V Mild Hybrid Battery Disconnect
Use Scenario: High-current H-bridge motor driver for steering assist actuation under dynamic load. IC Role / Device Role / Timing Role: Low-side and high-side switching element in bidirectional 12 V/24 V motor control stage. Use Value: 2.3 mΩ R_DS(on) and 100 A DC rating minimize resistive heating during sustained torque demand, extending module lifetime.	Use Scenario: Isolation switch between 48 V Li-ion battery pack and DC-DC converter during fault or sleep mode. IC Role / Device Role / Timing Role: Single-pole, double-throw (SPDT) power switch with fast turn-off for safety-critical disconnection. Use Value: 185 mJ avalanche energy rating ensures robustness against inductive kickback during emergency shutdown sequences.
Onboard Charger (OBC) Input Stage	Commercial Vehicle HVAC Compressor Drive
Use Scenario: AC-DC front-end rectification and PFC switching in bi-directional OBCs for plug-in hybrids. IC Role / Device Role / Timing Role: Synchronous rectifier and boost switch in interleaved totem-pole PFC topology. Use Value: Low C_iss (4700 pF typ.) and fast switching (t_d(on) = 70 ns max) support >100 kHz operation with minimal dead-time loss.	Use Scenario: Inverter leg switch for variable-speed HVAC compressor in Class 8 trucks and buses. IC Role / Device Role / Timing Role: High-current, high-temperature switching device in 3-phase inverter bridge. Use Value: 175 °C channel temperature rating and R_th(ch-C) = 0.85 °C/W enable stable operation at under-hood ambient up to 125 °C.

Electric Power Steering (EPS)

48 V Mild Hybrid Battery Disconnect

Use Scenario: High-current H-bridge motor driver for steering assist actuation under dynamic load.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in bidirectional 12 V/24 V motor control stage.

Use Value: 2.3 mΩ R_DS(on) and 100 A DC rating minimize resistive heating during sustained torque demand, extending module lifetime.

Use Scenario: Isolation switch between 48 V Li-ion battery pack and DC-DC converter during fault or sleep mode.

IC Role / Device Role / Timing Role: Single-pole, double-throw (SPDT) power switch with fast turn-off for safety-critical disconnection.

Use Value: 185 mJ avalanche energy rating ensures robustness against inductive kickback during emergency shutdown sequences.

Onboard Charger (OBC) Input Stage

Commercial Vehicle HVAC Compressor Drive

Use Scenario: AC-DC front-end rectification and PFC switching in bi-directional OBCs for plug-in hybrids.

IC Role / Device Role / Timing Role: Synchronous rectifier and boost switch in interleaved totem-pole PFC topology.

Use Value: Low C_iss (4700 pF typ.) and fast switching (t_d(on) = 70 ns max) support >100 kHz operation with minimal dead-time loss.

Use Scenario: Inverter leg switch for variable-speed HVAC compressor in Class 8 trucks and buses.

IC Role / Device Role / Timing Role: High-current, high-temperature switching device in 3-phase inverter bridge.

Use Value: 175 °C channel temperature rating and R_th(ch-C) = 0.85 °C/W enable stable operation at under-hood ambient up to 125 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4LF8AG	R_DS(on) = 2.0 mΩ min at 10 V, but rated for 40 V only at T_C ≤ 100 °C; no AEC-Q101 documentation confirmed.	Used in industrial SMPS; lacks formal automotive qualification evidence for safety-critical use.	Select when cost sensitivity outweighs AEC-Q101 traceability; verify thermal derating per layout.
IXFH100N40X3	Higher V_DSS = 400 V, R_DS(on) = 5.2 mΩ, TO-247 package; significantly higher R_DS(on) and larger footprint.	Targeted at 400 V industrial inverters; unsuitable for space-constrained automotive modules.	Choose only if higher voltage margin is required and board area permits TO-247 mounting.

Compared with STL220N4LF8AG and IXFH100N40X3, NP100N04PUK(1)-E1-AY provides certified automotive reliability, lowest on-resistance in TO-263 form factor, and optimal thermal performance for 40 V battery systems - making it the preferred choice where AEC-Q101 compliance and compact high-current switching are mandatory.

Availability

NP100N04PUK(1)-E1-AY is available at Aetrix Electronics and suitable for electric power steering, 48 V mild hybrid battery disconnect, and onboard charger input stages requiring stable component supply, long-term lifecycle support, and automotive-grade traceability.

Supply support for NP100N04PUK(1)-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The NP100N04PUK(1)-E1-AY belongs to Renesas' high-current automotive MOSFET product line, engineered specifically for robust, high-efficiency switching in 12 V/24 V/48 V vehicle electrification systems.

FAQ

What is the maximum continuous drain current rating for NP100N04PUK(1)-E1-AY?

The NP100N04PUK(1)-E1-AY has a maximum continuous drain current (I_D(DC)) of ±100 A at case temperature T_C = 25 °C. This rating assumes proper heatsinking and derates linearly above 25 °C per the published thermal resistance curve (R_th(ch-C) = 0.85 °C/W). At T_C = 100 °C, the usable I_D(DC) drops to approximately ±62 A.

Is NP100N04PUK(1)-E1-AY qualified for automotive applications?

Yes, NP100N04PUK(1)-E1-AY is explicitly AEC-Q101 qualified, as stated in the official Renesas preliminary datasheet R07DS0545EJ0100. This qualification covers stress tests including high-temperature gate bias (HTGB), high-temperature reverse bias (HTRB), and temperature cycling - confirming suitability for under-hood automotive power modules.

What is the gate-to-source threshold voltage range for NP100N04PUK(1)-E1-AY?

The gate-to-source threshold voltage (V_GS(th)) for NP100N04PUK(1)-E1-AY is specified as 2.0–4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures consistent turn-on behavior across temperature and process variation, supporting compatibility with standard 3.3 V and 5 V logic-level gate drivers when used with appropriate level-shifting or bootstrap circuitry.

Does NP100N04PUK(1)-E1-AY include an integrated body diode?

Yes, NP100N04PUK(1)-E1-AY incorporates a built-in body diode with forward voltage V_F(S-D) = 0.9–1.5 V at I_F = 100 A and V_GS = 0 V. Its reverse recovery time (t_rr) is 52 ns and reverse recovery charge (Q_rr) is 78 nC, enabling effective freewheeling in inductive switching applications such as motor drives and DC-DC converters.

What package type does NP100N04PUK(1)-E1-AY use and how many terminals does it have?

NP100N04PUK(1)-E1-AY uses the TO-263 (MP-25ZP) surface-mount package with four terminals: Pin 1 (Gate), Pin 2 (Drain), Pin 3 (Source), and Pin 4 (Drain). The dual-drain configuration improves current distribution and thermal conduction to the PCB, and the exposed drain tab must be soldered to a large copper pour for optimal thermal performance.

NP100N04PUK(1)-E1-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

NP100N04PUK(1)-E1-AY FAQ

1.How can I place an order for NP100N04PUK(1)-E1-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP100N04PUK(1)-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP100N04PUK(1)-E1-AY reliable?

The price and inventory of NP100N04PUK(1)-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP100N04PUK(1)-E1-AY is usually 5 days.

3.What payment methods are accepted for NP100N04PUK(1)-E1-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP100N04PUK(1)-E1-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP100N04PUK(1)-E1-AY?

NP100N04PUK(1)-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP100N04PUK(1)-E1-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP100N04PUK(1)-E1-AY?

For technical support, including NP100N04PUK(1)-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP100N04PUK(1)-E1-AY requirements.

6.How does Aetrix verify that NP100N04PUK(1)-E1-AY is sourced from the original manufacturer or authorized distributors?

All NP100N04PUK(1)-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP100N04PUK(1)-E1-AY meets industry standards.

7.What is the process for return or replacement of NP100N04PUK(1)-E1-AY?

All NP100N04PUK(1)-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP100N04PUK(1)-E1-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP100N04PUK(1)-E1-AY part is unused and in its original packaging.

Return procedure for NP100N04PUK(1)-E1-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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