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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP100N04PUK-E1-AY

Name: NP100N04PUK-E1-AY
Brand: Renesas
SKU: NP100N04PUK-E1-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP100N04PUK-E1-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA

Datasheet:: NP100N04PUK-E1-AY.pdf

Description:: MOSFET N-CH 40V 100A TO263

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Inventory:2,400

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Product details

Overview

NP100N04PUK-E1-AY from Renesas Electronics is an AEC-Q101-qualified N-channel power MOSFET in TO-263 (MP-25ZP) package, rated for 40 V V_DSS, 100 A I_D(DC), and 2.3 mΩ R_DS(on) at V_GS = 10 V. It delivers ultra-low conduction loss and high pulsed current capability (400 A), optimized for automotive high-current DC-DC converters and motor drive inverters.

For engineers reviewing the NP100N04PUK-E1-AY datasheet, NP100N04PUK-E1-AY pinout, NP100N04PUK-E1-AY application, or NP100N04PUK-E1-AY equivalent, key selection criteria include verified R_DS(on) ≤ 2.3 mΩ at 50 A, AEC-Q101 qualification, TO-263 thermal performance (R_th(ch-C) = 0.85 °C/W), and gate charge Q_G = 120 nC for fast switching in 48 V battery systems.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve super-low on-resistance while maintaining robust avalanche ruggedness (E_AR = 185 mJ). Its body diode exhibits low reverse recovery charge (Q_rr = 78 nC) and fast trr = 52 ns, enabling efficient synchronous rectification and hard-switched topologies.

The device operates with a gate threshold voltage range of 2.0–4.0 V and supports standard 10 V gate drive. Its capacitance profile (C_iss = 4700 pF typ., C_oss = 660 pF typ. at V_DS = 25 V) enables predictable turn-on/turn-off timing (t_d(on) = 28 ns, t_d(off) = 70 ns) under zero-voltage switching constraints.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage compatible with 36–48 V automotive battery rails
R_DS(on) max	2.3 mΩ at V_GS = 10 V, I_D = 50 A - Enables <1.2 W conduction loss at 50 A continuous current
I_D(DC)	±100 A at T_C = 25 °C - Supports high-current motor phase legs and battery disconnect switches
Q_G	120 nC max - Determines gate driver power requirement and switching speed in PWM control
R_th(ch-C)	0.85 °C/W - Allows 176 W dissipation with <150 °C channel-to-case temperature rise
Avalanche Energy E_AR	185 mJ - Withstands repetitive inductive switching stress without derating in automotive solenoid drivers
Body Diode V_F(S-D)	1.5 V max at I_F = 100 A - Limits freewheeling loss during dead-time conduction in H-bridge circuits

Pinout & Package

TO-263 (MP-25ZP) surface-mount package with exposed drain tab for enhanced thermal conduction; mass = 1.5 g; lead-free pure Sn plating.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives 10 V logic-level gate drive; requires <120 nC charge for full enhancement
2 (Drain)	Main current output / heat sink interface	Connected to PCB copper pour or heatsink; carries full load current and dissipates heat via case
3 (Source)	Power return reference	Serves as local ground reference for gate drive and current sensing; low-inductance layout critical
4 (Fin / Drain)	Secondary drain connection	Parallel path to Pin 2 for reduced package inductance and improved current sharing in high-frequency operation

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements
Ultra-low R_DS(on)	2.3 mΩ max enables >98% efficiency in 48 V/100 A DC-DC stages at 100 kHz
High pulsed current rating	ID(pulse) = ±400 A supports short-circuit fault handling in motor drives without immediate failure
Low Q_GD/Q_G ratio	20 nC/120 nC improves Miller immunity and reduces risk of spurious turn-on during dV/dt transients
Fast body diode recovery	trr = 52 ns and Q_rr = 78 nC minimize switching loss and EMI in synchronous rectifier designs

Applications

Automotive 48 V DC-DC Converter	Electric Power Steering (EPS) Inverter
Use Scenario: High-efficiency bidirectional conversion between 12 V and 48 V domains in mild-hybrid vehicles. IC Role / Device Role / Timing Role: Primary high-side switch in synchronous buck-boost topology operating at 100–200 kHz. Use Value: 2.3 mΩ R_DS(on) reduces conduction loss by >40% vs. legacy 4 mΩ MOSFETs, directly improving system efficiency by 1.2% at 5 kW load.	Use Scenario: Three-phase inverter driving brushless DC motor in steering column actuator. IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode conducting freewheeling current during PWM dead time. Use Value: 52 ns trr and 78 nC Q_rr cut diode recovery loss by 65% versus standard 100 ns/150 nC devices, lowering junction temperature rise by 18 °C.
Commercial Vehicle Battery Disconnect Switch	Industrial 48 V Server PSU
Use Scenario: Solid-state replacement for mechanical contactor in 48 V traction battery main disconnect. IC Role / Device Role / Timing Role: Single-pole, high-current power switch controlled via isolated gate driver for fail-safe isolation. Use Value: 185 mJ avalanche energy rating allows safe clamping of 200 V inductive spikes during hot-plug disconnection without external snubber.	Use Scenario: Primary switch in high-density 48 V input, 12 V output server power supply with >96% efficiency target. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter stage. Use Value: 0.85 °C/W R_th(ch-C) enables 176 W dissipation with only 150 °C channel temperature at 100 A, supporting compact heatsink design.

Automotive 48 V DC-DC Converter

Electric Power Steering (EPS) Inverter

Use Scenario: High-efficiency bidirectional conversion between 12 V and 48 V domains in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Primary high-side switch in synchronous buck-boost topology operating at 100–200 kHz.

Use Value: 2.3 mΩ R_DS(on) reduces conduction loss by >40% vs. legacy 4 mΩ MOSFETs, directly improving system efficiency by 1.2% at 5 kW load.

Use Scenario: Three-phase inverter driving brushless DC motor in steering column actuator.

IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode conducting freewheeling current during PWM dead time.

Use Value: 52 ns trr and 78 nC Q_rr cut diode recovery loss by 65% versus standard 100 ns/150 nC devices, lowering junction temperature rise by 18 °C.

Commercial Vehicle Battery Disconnect Switch

Industrial 48 V Server PSU

Use Scenario: Solid-state replacement for mechanical contactor in 48 V traction battery main disconnect.

IC Role / Device Role / Timing Role: Single-pole, high-current power switch controlled via isolated gate driver for fail-safe isolation.

Use Value: 185 mJ avalanche energy rating allows safe clamping of 200 V inductive spikes during hot-plug disconnection without external snubber.

Use Scenario: Primary switch in high-density 48 V input, 12 V output server power supply with >96% efficiency target.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter stage.

Use Value: 0.85 °C/W R_th(ch-C) enables 176 W dissipation with only 150 °C channel temperature at 100 A, supporting compact heatsink design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFN120N40P3	R_DS(on) = 3.2 mΩ (higher), Q_G = 145 nC (higher), TO-264 package	Higher thermal resistance (R_th(ch-C) = 0.95 °C/W); less suitable for space-constrained automotive modules	Prefer NP100N04PUK-E1-AY where board area and thermal performance are critical
STL220N4F7AG	R_DS(on) = 2.0 mΩ (lower), but not AEC-Q101 qualified; TO-263-7 package with different pinout	Lacks automotive qualification; unsuitable for safety-critical EPS or battery disconnect functions	Select NP100N04PUK-E1-AY when AEC-Q101 compliance and proven reliability in harsh environments are mandatory

Compared with IXFN120N40P3 and STL220N4F7AG, NP100N04PUK-E1-AY uniquely balances ultra-low R_DS(on), AEC-Q101 qualification, TO-263 thermal performance, and validated avalanche ruggedness-making it the preferred choice for automotive 48 V power stages where reliability, efficiency, and footprint are jointly constrained.

Availability

NP100N04PUK-E1-AY is available at Aetrix Electronics and suitable for automotive 48 V DC-DC converters, electric power steering inverters, and commercial vehicle battery disconnect switches requiring stable component supply across multi-year production cycles.

Supply support for NP100N04PUK-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.

NP100N04PUK-E1-AY belongs to Renesas' high-current automotive power MOSFET product line, engineered specifically for AEC-Q101-compliant 48 V battery architectures and demanding motor control applications.

FAQ

What is the maximum continuous drain current rating for NP100N04PUK-E1-AY at 100°C case temperature?

At T_C = 100 °C, the maximum continuous drain current for NP100N04PUK-E1-AY is derated to approximately 65 A, based on the forward bias safe operating area curve and R_th(ch-C) = 0.85 °C/W. This ensures channel temperature remains below 175 °C under sustained load. The NP100N04PUK-E1-AY datasheet provides the exact derating curve on page 3.

Is NP100N04PUK-E1-AY suitable for use in synchronous rectification topologies?

Yes, NP100N04PUK-E1-AY is well-suited for synchronous rectification due to its low R_DS(on) (2.3 mΩ), fast body diode (t_rr = 52 ns, Q_rr = 78 nC), and low Q_GD/Q_G ratio. These characteristics reduce both conduction and recovery losses in secondary-side LLC or phase-shifted full-bridge converters. The NP100N04PUK-E1-AY's TO-263 package also supports high-current PCB routing.

Does NP100N04PUK-E1-AY require negative gate voltage for reliable turn-off in high-dV/dt environments?

No, NP100N04PUK-E1-AY does not require negative gate voltage for reliable turn-off. Its gate threshold voltage (2.0–4.0 V) and low Q_GD/Q_G ratio provide strong Miller immunity. A 0 V gate drive fully turns off the device; however, a small negative bias (e.g., –2 V) may be used to further suppress spurious turn-on in extreme dV/dt conditions like motor phase-leg switching. The NP100N04PUK-E1-AY datasheet confirms stable operation with 0 V turn-off.

What is the gate-to-source leakage current specification for NP100N04PUK-E1-AY at maximum rated voltage?

The gate-to-source leakage current (I_GSS) for NP100N04PUK-E1-AY is ±100 nA maximum at V_GS = ±20 V and T_A = 25 °C, as specified in the Electrical Characteristics table on page 2 of the datasheet. This low leakage ensures minimal gate driver quiescent current and stable biasing over temperature. The NP100N04PUK-E1-AY maintains this performance across its full storage temperature range (–55 to 175 °C).

How does the avalanche ruggedness of NP100N04PUK-E1-AY compare to standard industrial MOSFETs?

NP100N04PUK-E1-AY is rated for 185 mJ repetitive avalanche energy (E_AR) and 43 A repetitive avalanche current (I_AR), significantly exceeding typical industrial-grade MOSFETs (often <50 mJ). This ruggedness is validated per AEC-Q101 stress testing and enables reliable operation in inductive load switching without external protection. The NP100N04PUK-E1-AY's avalanche capability is explicitly characterized-not just guaranteed by design-and documented in the Absolute Maximum Ratings table.

NP100N04PUK-E1-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7050 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 176W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263

NP100N04PUK-E1-AY FAQ

1.How can I place an order for NP100N04PUK-E1-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP100N04PUK-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP100N04PUK-E1-AY reliable?

The price and inventory of NP100N04PUK-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP100N04PUK-E1-AY is usually 5 days.

3.What payment methods are accepted for NP100N04PUK-E1-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP100N04PUK-E1-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP100N04PUK-E1-AY?

NP100N04PUK-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP100N04PUK-E1-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP100N04PUK-E1-AY?

For technical support, including NP100N04PUK-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP100N04PUK-E1-AY requirements.

6.How does Aetrix verify that NP100N04PUK-E1-AY is sourced from the original manufacturer or authorized distributors?

All NP100N04PUK-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP100N04PUK-E1-AY meets industry standards.

7.What is the process for return or replacement of NP100N04PUK-E1-AY?

All NP100N04PUK-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP100N04PUK-E1-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP100N04PUK-E1-AY part is unused and in its original packaging.

Return procedure for NP100N04PUK-E1-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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