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Renesas NP160N055TUJ-E1-AY
- Part No.:
- NP160N055TUJ-E1-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-263-7, D2PAK (6 Leads + Tab)
- Datasheet:
-
NP160N055TUJ-E1-AY.pdf
- Description:
- NP160N055TUJ-E1-AY - SWITCHINGN-
- Quantity:
- Payment:
- Shipping:
Inventory:1,600
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Product details
Overview
NP160N055TUJ-E1-AY from Renesas Electronics is an AEC-Q101 qualified N-channel power MOSFET in TO-263-7 package, rated for 55 V VDSS, 160 A DC drain current, and 3.0 mΩ max RDS(on) at VGS = 10 V and ID = 80 A - optimized for high-current automotive switching applications including motor control and DC-DC conversion.
For engineers reviewing the NP160N055TUJ-E1-AY datasheet, NP160N055TUJ-E1-AY pinout, NP160N055TUJ-E1-AY application, or NP160N055TUJ-E1-AY equivalent, key selection criteria include its low RDS(on), high pulse current capability (±640 A), robust avalanche rating (291 mJ), and automotive-grade thermal performance with Rth(ch-C) = 0.60 °C/W.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-power automotive systems. Its gate threshold voltage (2.0–4.0 V) ensures reliable turn-on with standard 10 V gate drivers, while its 115–180 nC total gate charge balances drive strength and switching speed.
The device integrates a co-packaged body diode with 0.9–1.5 V forward voltage at 160 A and 57 ns reverse recovery time, enabling synchronous rectification and freewheeling in hard-switched topologies. Its TO-263-7 package features dual drain terminals (pins 4 & 8) and five-source pins (2,3,5,6,7) to minimize source inductance and improve current sharing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Maximum blocking voltage compatible with 48 V automotive systems and 24 V battery architectures. |
| RDS(on) max | 3.0 mΩ at VGS = 10 V, ID = 80 A - Enables <1.9 W conduction loss at 80 A, reducing heatsink requirements. |
| ID(DC) | ±160 A at TC = 25°C - Supports high-current motor phases and battery disconnect circuits without parallel devices. |
| EAR | 291 mJ - Rated repetitive avalanche energy allows operation under inductive load switching without external snubbers. |
| Ciss typ | 6900 pF at VDS = 25 V - Low input capacitance reduces gate drive power and improves switching efficiency above 50 kHz. |
| QG | 115–180 nC - Gate charge range supports scalable gate driver selection for trade-offs between switching speed and EMI. |
| Tch max | 175°C - High channel temperature rating enables sustained operation in under-hood environments. |
Pinout & Package
NP160N055TUJ-E1-AY uses the TO-263-7 (MP-25ZT) surface-mount package with exposed drain pad (pins 4 & 8) and five paralleled source terminals (pins 2,3,5,6,7) for low-inductance, high-current PCB layout. The gate terminal is on pin 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control input requiring 10 V drive for full enhancement; gate leakage ≤ ±100 nA at ±20 V. |
| 2,3,5,6,7 | Source | Five paralleled low-inductance source paths reduce common-source inductance and improve current sharing. |
| 4,8 | Drain (Fin) | Exposed copper drain pad (pins 4 & 8) provides primary thermal path to PCB and mechanical mounting surface. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive under-hood use per stress test requirements including HTOL, TC, HTRB, and UHAST. |
| Low RDS(on) × QG figure of merit | ~345 Ω·nC - Optimized for high-efficiency, high-frequency switching in 48 V DC-DC converters. |
| High avalanche ruggedness | 54 A repetitive avalanche current with 291 mJ energy - eliminates need for external clamping in motor phase-legs. |
| Body diode with fast recovery | 57 ns trr, 115 nC Qrr - Enables efficient freewheeling in half-bridge configurations without external Schottky. |
| Pb-free lead plating | Pure Sn (Tin) finish on TO-263-7 leads - compliant with RoHS and JEDEC J-STD-020 reflow profiles. |
Applications
| Automotive Motor Control | 48 V DC-DC Converters |
|---|---|
|
Use Scenario: High-power BLDC motor phase switches in electric power steering (EPS) and HVAC blowers. IC Role / Device Role / Timing Role: Main switching element in three-phase inverter leg, operating at 10–20 kHz PWM frequency. Use Value: 3.0 mΩ RDS(on) minimizes conduction loss at 120 A peak phase current, reducing thermal stress in compact EPS modules. |
Use Scenario: Primary-side synchronous rectifier in isolated bidirectional 48 V/12 V DC-DC converters for mild hybrid vehicles. IC Role / Device Role / Timing Role: High-side switch in active clamp forward topology, handling 160 A DC output current. Use Value: 291 mJ avalanche energy rating withstands voltage spikes during transient load dumps without failure. |
| Battery Disconnect Units | Onboard Chargers (OBC) |
|
Use Scenario: Main contactor replacement in 48 V battery management systems for commercial EVs and e-bikes. IC Role / Device Role / Timing Role: Solid-state high-current disconnect switch controlling up to 160 A continuous battery feed. Use Value: Dual drain terminals (pins 4 & 8) and five-source pins enable <0.5 mΩ PCB trace resistance contribution, preserving system efficiency. |
Use Scenario: Secondary-side synchronous rectifier in 6.6 kW OBC AC/DC stage operating at 100 kHz. IC Role / Device Role / Timing Role: Low-loss rectifying switch replacing Schottky diodes in LLC resonant converter output stage. Use Value: 57 ns reverse recovery time and 115 nC Qrr reduce switching losses by >40% vs. discrete Si diodes at 160 A output. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXFN160N55P3 | Higher RDS(on) (4.2 mΩ), higher QG (220 nC), TO-247 package | Requires larger heatsink and slower switching; suited for lower-frequency industrial inverters | Select when legacy TO-247 footprint compatibility is required over automotive qualification. |
| STL220N5LF8AG | Lower VDSS (40 V), similar RDS(on) (2.8 mΩ), same TO-263-7 package | Limited to 40 V systems; not rated for 48 V transients or AEC-Q101 | Choose only for cost-sensitive 12/24 V automotive accessories where 55 V rating is unnecessary. |
Compared with IXFN160N55P3 and STL220N5LF8AG, NP160N055TUJ-E1-AY uniquely combines AEC-Q101 compliance, 55 V rating, and 3.0 mΩ RDS(on) in TO-263-7 - making it the only drop-in solution for thermally constrained 48 V automotive power stages requiring both reliability and efficiency.
Availability
NP160N055TUJ-E1-AY is available at Aetrix Electronics and suitable for automotive motor control, 48 V DC-DC conversion, and battery disconnect applications requiring stable component supply, long-term lifecycle support, and AEC-Q101 traceability.
Supply support for NP160N055TUJ-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
NP160N055TUJ-E1-AY belongs to Renesas' Automotive Power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine compartments and battery systems.
FAQ
What is the maximum continuous drain current rating for NP160N055TUJ-E1-AY?
The NP160N055TUJ-E1-AY is rated for ±160 A DC drain current at case temperature TC = 25°C. Derating applies above 25°C per the datasheet's power dissipation curve - at TC = 100°C, the usable DC current drops to approximately 95 A due to thermal limits. This rating assumes proper PCB copper area and thermal vias for heat transfer from the TO-263-7 drain pad.
Is NP160N055TUJ-E1-AY qualified for automotive applications?
Yes, NP160N055TUJ-E1-AY is AEC-Q101 qualified and explicitly designed for automotive use. It meets stress test requirements including high-temperature operating life (HTOL), temperature cycling (TC), and humidity testing (HTRB). The device is intended for under-hood applications such as motor control and battery management where reliability across -55°C to +175°C channel temperature is critical.
What is the gate threshold voltage range for NP160N055TUJ-E1-AY?
The gate threshold voltage VGS(th) for NP160N055TUJ-E1-AY is specified from 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This range ensures consistent turn-on behavior across temperature and process variation, supporting robust operation with 10 V gate drive while remaining compatible with 8 V minimum logic-level drivers in some configurations.
Does NP160N055TUJ-E1-AY include an integrated body diode?
Yes, NP160N055TUJ-E1-AY incorporates a monolithic body diode with a forward voltage VF(S-D) of 0.9–1.5 V at IF = 160 A and VGS = 0 V. Its reverse recovery time is 57 ns and reverse recovery charge is 115 nC, enabling effective freewheeling in half-bridge and synchronous rectifier topologies without external diodes.
What thermal resistance values are specified for NP160N055TUJ-E1-AY?
NP160N055TUJ-E1-AY specifies Rth(ch-C) = 0.60 °C/W (channel-to-case) and Rth(ch-A) = 83.3 °C/W (channel-to-ambient). The low 0.60 °C/W value reflects the high thermal conductivity of the TO-263-7 drain pad, which must be soldered to ≥10 cm² of 2 oz copper with ≥12 thermal vias for optimal performance in automotive applications.
NP160N055TUJ-E1-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-263-7, D2PAK (6 Leads + Tab)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 180 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 10350 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta), 250W (Tc)
- Operating Temperature:
- 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263-7
NP160N055TUJ-E1-AY FAQ
1.How can I place an order for NP160N055TUJ-E1-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for NP160N055TUJ-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NP160N055TUJ-E1-AY reliable?
The price and inventory of NP160N055TUJ-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP160N055TUJ-E1-AY is usually 5 days.
3.What payment methods are accepted for NP160N055TUJ-E1-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP160N055TUJ-E1-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NP160N055TUJ-E1-AY?
NP160N055TUJ-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NP160N055TUJ-E1-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NP160N055TUJ-E1-AY?
For technical support, including NP160N055TUJ-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP160N055TUJ-E1-AY requirements.
6.How does Aetrix verify that NP160N055TUJ-E1-AY is sourced from the original manufacturer or authorized distributors?
All NP160N055TUJ-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP160N055TUJ-E1-AY meets industry standards.
7.What is the process for return or replacement of NP160N055TUJ-E1-AY?
All NP160N055TUJ-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP160N055TUJ-E1-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NP160N055TUJ-E1-AY part is unused and in its original packaging.
Return procedure for NP160N055TUJ-E1-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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