Renesas NP161N04TUG-E1-AY

Overview

NP161N04TUG-E1-AY from Renesas Electronics is an N-channel power MOSFET optimized for high-current DC-DC converter primary-side switching, motor inverter half-bridge legs, and industrial power supply synchronous rectification. It delivers R_DS(on) = 1.35 mΩ (typ), 160 A DC drain current, and 40 V V_DSS, operating reliably up to 175°C channel temperature in TO-263-7 (MP-25ZT) package.

For engineers reviewing the NP161N04TUG-E1-AY datasheet, NP161N04TUG-E1-AY pinout, NP161N04TUG-E1-AY application, or NP161N04TUG-E1-AY equivalent, this page provides verified electrical parameters, thermal performance data, gate charge characteristics, avalanche capability, and real-world use context for high-efficiency 12–48 V power systems requiring low conduction loss and robust pulsed current handling.

Technical Context

This MOSFET employs trench-gate silicon process technology to achieve ultra-low on-resistance while maintaining fast switching speed and rugged avalanche performance. Its 7-pin TO-263-7 package integrates a thermally enhanced drain-fin structure with five parallel source terminals to minimize source inductance and improve current sharing under high di/dt conditions.

The device features a gate threshold voltage of 2.0–4.0 V, total gate charge of 230–345 nC at V_DD = 32 V, and body diode reverse recovery time of 60 ns - enabling efficient operation in hard-switched and synchronous rectifier topologies without external snubbers in many cases.

Key Specifications

Pinout & Package

Package: TO-263-7 (MP-25ZT), surface-mount, thermally enhanced with exposed drain-fin tab (Pin 4 & Pin 8). Weight: ~1.5 g. Pb-free pure Sn plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXFN180N10P3 and IRFP4868PbF, the NP161N04TUG-E1-AY offers superior thermal performance in surface-mount form factor, lower gate charge for faster switching, and optimized geometry for high-di/dt stability - making it the preferred choice for space-constrained, high-efficiency 40–48 V power stages where board area and thermal density are critical.

Availability

NP161N04TUG-E1-AY is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable Pb-free sourcing.

Supply support for NP161N04TUG-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, infrastructure, and IoT applications.

The NP161N04TUG belongs to Renesas' high-current power MOSFET product line, engineered specifically for next-generation high-efficiency, high-power-density DC-DC conversion and motor control systems demanding ultra-low R_DS(on) and rugged thermal performance.

FAQ

What is the maximum continuous drain current rating for NP161N04TUG-E1-AY at 100°C case temperature?

The NP161N04TUG-E1-AY supports 120 A DC drain current at T_C = 100°C, derived from its 160 A rating at 25°C and derating curve in the datasheet (D19411EJ1V0DS, p.3). This value assumes adequate PCB copper area and thermal interface to maintain case temperature - not ambient temperature - at 100°C. The NP161N04TUG-E1-AY's 0.6 °C/W channel-to-case thermal resistance enables this performance with standard 2 oz. copper heatsinking.

Does NP161N04TUG-E1-AY have a fully rated body diode for synchronous rectification?

Yes, the NP161N04TUG-E1-AY integrates a robust body diode characterized with VF(S-D) = 0.9–1.5 V at 160 A and trr = 60 ns (di/dt = 100 A/μs). Its Q_rr = 100 nC and soft recovery behavior make it suitable for synchronous rectification in LLC and phase-shifted full-bridge converters. The NP161N04TUG-E1-AY's five-source-pin configuration further reduces source inductance, minimizing voltage spikes during diode commutation.

Can NP161N04TUG-E1-AY be used in avalanche mode for circuit protection?

Yes, the NP161N04TUG-E1-AY is rated for repetitive avalanche operation: I_AR = 70 A and E_AR = 650 mJ at T_ch = 150°C. These values are validated per test conditions in the datasheet (V_DD = 25 V, R_G = 25 Ω, L = 100 μH). The NP161N04TUG-E1-AY's avalanche capability allows use in non-clamped inductive switching circuits without external snubbers, provided energy per event stays within the 650 mJ limit.

What is the gate threshold voltage range for NP161N04TUG-E1-AY, and how does it affect drive requirements?

The NP161N04TUG-E1-AY has a gate threshold voltage V_GS(th) of 2.0–4.0 V (measured at I_D = 250 μA). This range ensures reliable turn-on with standard 5 V logic-level drivers but mandates ≥10 V gate drive to achieve the specified 1.35 mΩ R_DS(on). Driving the NP161N04TUG-E1-AY at 8 V yields ~2.0 mΩ - a 50% increase in conduction loss - so 10–12 V gate bias is recommended for optimal efficiency.

Is NP161N04TUG-E1-AY RoHS-compliant and lead-free?

Yes, the NP161N04TUG-E1-AY is Pb-free, with pure Sn (tin) lead plating as confirmed in the ordering information and marking section of the datasheet. It complies with EU RoHS Directive 2011/65/EU and meets Renesas' environmental standards. The "-E1-AY" suffix explicitly denotes tape-and-reel packaging with Pb-free plating, and the "UG" marking on the device body indicates RoHS compliance.