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Renesas NP180N04TUG-E1-AY
- Part No.:
- NP180N04TUG-E1-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-263-7, D2PAK (6 Leads + Tab)
- Datasheet:
-
NP180N04TUG-E1-AY.pdf
- Description:
- MOSFET N-CH 40V 180A TO263-7
- Quantity:
- Payment:
- Shipping:
Inventory:8,714
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Product details
Overview
NP180N04TUG-E1-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching, motor inverter half-bridge legs, and industrial power supply synchronous rectification. It delivers RDS(on) = 1.2 mΩ (typ), 180 A DC drain current, and 40 V VDSS, operating reliably up to 175 °C channel temperature in TO-263-7 package.
For engineers reviewing the NP180N04TUG-E1-AY datasheet, NP180N04TUG-E1-AY pinout, NP180N04TUG-E1-AY application, or NP180N04TUG-E1-AY equivalent, key selection criteria include low conduction loss at high current, avalanche ruggedness (EAS = 518 mJ), thermal resistance (Rth(ch–C) = 0.52 °C/W), and gate charge (QG = 260–390 nC) for efficient hard-switching operation.
Technical Context
This device uses a trench-gate, super-junction structure optimized for low RDS(on) × QG figure-of-merit. Its 7-pin TO-263-7 (MP-25ZT) package integrates five parallel source terminals and a thermally enhanced drain-fin tab to support >180 A continuous current with minimal PCB copper area.
The MOSFET features a body diode with VF(S–D) = 0.9–1.5 V at 180 A and fast reverse recovery (trr = 65 ns, Qrr = 110 nC), enabling use in synchronous buck converters without external Schottky diodes. Gate threshold voltage is tightly distributed (VGS(th) = 2.0–4.0 V), supporting robust TTL/CMOS-level drive compatibility.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage for 12 V and 24 V input bus systems with margin against transients. |
| RDS(on) (VGS = 10 V, ID = 90 A) | 1.2 mΩ (typ) - Enables <1.0 W conduction loss at 90 A, critical for high-efficiency power stages. |
| ID(DC) | ±180 A - Supports high-power motor drives and server VRMs without paralleling devices. |
| EAS | 518 mJ - Withstands single-pulse inductive energy without failure, essential for unclamped inductive switching. |
| QG | 260–390 nC - Determines gate driver power requirement and switching speed trade-off in hard-switched topologies. |
| Rth(ch–C) | 0.52 °C/W - Allows >250 W power dissipation with modest heatsinking, reducing thermal design complexity. |
| trr / Qrr | 65 ns / 110 nC - Minimizes diode recovery loss and EMI in synchronous rectification applications. |
Pinout & Package
Package: TO-263-7 (MP-25ZT), surface-mount, thermally enhanced with exposed drain-fin tab and five parallel source leads for low-inductance, high-current routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal; requires 10 V drive for full enhancement; sensitive to ESD (max ±20 V rating). |
| 2, 3, 5, 6, 7 | Source | Five parallel low-inductance source connections; must be routed with equal length and width to balance current sharing. |
| 4 & 8 (Drain Fin) | Drain | Exposed metal tab serving as primary drain connection and thermal path; must be soldered to large copper pour for heat extraction. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 1.2 mΩ typ at 10 V drive enables <1 W conduction loss at 90 A, reducing thermal stress in compact power modules. |
| High avalanche energy rating | 518 mJ single-pulse capability allows reliable operation in unclamped inductive loads like motor phase legs without snubbers. |
| Optimized gate charge profile | QG = 260–390 nC with QGD/QG ≈ 0.23 supports fast, controllable turn-on/turn-off with reduced Miller-induced shoot-through risk. |
| Fast body diode recovery | 65 ns trr and 110 nC Qrr minimize reverse recovery loss and voltage overshoot in synchronous rectifier configurations. |
| Pb-free and RoHS-compliant | Pure Sn plating meets EU RoHS Directive; compatible with standard lead-free reflow profiles (peak 260 °C, ≤10 s). |
Applications
| Server VRM High-Side Switch | Industrial Motor Inverter Half-Bridge |
|---|---|
Use Scenario: Primary-side switch in 48 V input, 1 V/300 A output multiphase buck converter for AI accelerators. IC Role / Device Role / Timing Role: High-side power switch handling 180 A DC per phase with 500 kHz PWM frequency. Use Value: 1.2 mΩ RDS(on) limits conduction loss to 32.4 W per phase at 180 A, enabling air-cooled designs without forced airflow. |
Use Scenario: Upper-leg switch in 3-phase 400 VAC-fed PMSM inverter for CNC spindle drives. IC Role / Device Role / Timing Role: Hard-switched N-channel MOSFET in 10–20 kHz inverter leg, paired with complementary lower-leg device. Use Value: 518 mJ EAS withstands turn-off energy from motor inductance during fault conditions, improving system reliability without added clamping circuits. |
| DC-DC Converter Synchronous Rectifier | High-Current Battery Protection FET |
Use Scenario: Low-side synchronous rectifier in isolated 28 V → 12 V forward converter for telecom power shelves. IC Role / Device Role / Timing Role: Bidirectional current-handling MOSFET replacing Schottky diode in secondary-side rectification. Use Value: 0.9–1.5 V body diode forward drop and 65 ns trr reduce conduction and recovery losses by >40% vs. discrete Schottky, improving efficiency at 150 A load. |
Use Scenario: Main battery disconnect FET in 24 V lithium-ion pack for material handling equipment. IC Role / Device Role / Timing Role: Single-pole, high-current protection switch placed between battery stack and main inverter input. Use Value: ±180 A DC rating supports peak surge currents during hydraulic actuator startup; 175 °C Tch rating ensures operation under sealed enclosure thermal stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXFN200N04T2 | RDS(on) = 1.4 mΩ (typ), QG = 320 nC, TO-264 package, higher Rth(ch–C) (0.65 °C/W) | Same voltage/current class but larger footprint; less suitable for space-constrained PCBs | Preferred when mechanical mounting to heatsink via screw is required instead of surface-mount thermal pad bonding. |
| IRFP7430PBF | RDS(on) = 1.3 mΩ (typ), QG = 340 nC, TO-247 package, no integrated multi-source pins | Lacks 5-source-pin layout; higher source inductance increases switching loss in high-di/dt applications | Acceptable where board layout allows separate Kelvin source routing and thermal management permits higher Rth. |
Compared with IXFN200N04T2 and IRFP7430PBF, the NP180N04TUG-E1-AY offers superior thermal performance (0.52 °C/W), lower gate charge, and optimized multi-source layout-making it preferred for high-density, high-reliability power stages where PCB real estate and thermal headroom are constrained.
Availability
NP180N04TUG-E1-AY is available at Aetrix Electronics and suitable for server VRMs, industrial motor inverters, and high-current battery protection systems requiring stable component supply across multi-year production cycles.
Supply support for NP180N04TUG-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
The NP180N04TUG-E1-AY belongs to Renesas' high-current power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial power conversion and motor control applications.
FAQ
What is the maximum continuous drain current rating for NP180N04TUG-E1-AY at 100°C case temperature?
The NP180N04TUG-E1-AY has a DC drain current rating of ±180 A at TC = 25°C. Derating follows the published curve: at 100°C case temperature, the maximum allowable ID(DC) is approximately ±125 A. This value is determined by thermal limits and must be verified using actual board-level thermal measurements in the target application. The NP180N04TUG-E1-AY datasheet provides the full derating graph on page 3.
Does NP180N04TUG-E1-AY support gate drive from a standard 5 V logic signal?
No. The NP180N04TUG-E1-AY has a gate threshold voltage range of 2.0–4.0 V, but full enhancement requires VGS ≥ 10 V to achieve the specified RDS(on) of 1.2 mΩ. Driving with only 5 V results in significantly higher on-resistance (>5 mΩ), excessive conduction loss, and potential thermal runaway. A dedicated 10–15 V gate driver is mandatory for NP180N04TUG-E1-AY operation.
Can NP180N04TUG-E1-AY be used in parallel configurations?
Yes, the NP180N04TUG-E1-AY supports paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing. However, strict layout symmetry is required: matched gate trace lengths, individual gate resistors (≤5 Ω), and Kelvin source connections for each device. Thermal coupling between paralleled NP180N04TUG-E1-AY units must also be uniform to prevent thermal runaway.
What is the recommended PCB land pattern for NP180N04TUG-E1-AY's TO-263-7 package?
The NP180N04TUG-E1-AY requires a minimum 400 mm² exposed copper pad (20 mm × 20 mm) with ≥6 thermal vias (0.3 mm diameter, 0.6 mm pitch) connecting to internal ground/power planes. Source pads must be wide and short (<2 mm length) with equal impedance; gate traces should be shielded from drain noise. Renesas' Mount Manual (document M8E 02.11-1) specifies exact dimensions and solder mask openings for NP180N04TUG-E1-AY.
Is NP180N04TUG-E1-AY qualified for automotive applications?
No. The NP180N04TUG-E1-AY is rated as "Standard" quality grade per Renesas documentation, intended for computers, industrial robots, and office equipment-not automotive systems. It lacks AEC-Q101 qualification, extended temperature validation beyond 175°C, or automotive-specific reliability testing. For automotive use, Renesas offers the RV series or RA8000 family, not NP180N04TUG-E1-AY.
NP180N04TUG-E1-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-263-7, D2PAK (6 Leads + Tab)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.5mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 390 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 25700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta), 288W (Tc)
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263-7
NP180N04TUG-E1-AY FAQ
1.How can I place an order for NP180N04TUG-E1-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for NP180N04TUG-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NP180N04TUG-E1-AY reliable?
The price and inventory of NP180N04TUG-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP180N04TUG-E1-AY is usually 5 days.
3.What payment methods are accepted for NP180N04TUG-E1-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP180N04TUG-E1-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NP180N04TUG-E1-AY?
NP180N04TUG-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NP180N04TUG-E1-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NP180N04TUG-E1-AY?
For technical support, including NP180N04TUG-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP180N04TUG-E1-AY requirements.
6.How does Aetrix verify that NP180N04TUG-E1-AY is sourced from the original manufacturer or authorized distributors?
All NP180N04TUG-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP180N04TUG-E1-AY meets industry standards.
7.What is the process for return or replacement of NP180N04TUG-E1-AY?
All NP180N04TUG-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP180N04TUG-E1-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NP180N04TUG-E1-AY part is unused and in its original packaging.
Return procedure for NP180N04TUG-E1-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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