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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP22N055SLE-E2-AY

Name: NP22N055SLE-E2-AY
Brand: Renesas
SKU: NP22N055SLE-E2-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP22N055SLE-E2-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: NP22N055SLE-E2-AY.pdf

Description:: TRANSISTOR

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Product details

Overview

NP22N055SLE-E2-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial motor drives and DC-DC converters. It features a 55 V drain-source breakdown voltage, 22 A continuous drain current (T_C = 25°C), and ultra-low R_DS(on) of 37 mΩ at V_GS = 10 V and I_D = 11 A - enabling efficient thermal performance in compact TO-252 (JEDEC) packages.

For engineers reviewing the NP22N055SLE-E2-AY datasheet, NP22N055SLE-E2-AY pinout, NP22N055SLE-E2-AY application, or NP22N055SLE-E2-AY equivalent, key selection criteria include its 175°C channel temperature rating, built-in gate protection diode, avalanche energy capability (19 mJ at I_AS = 14 A), and low C_iss (730 pF typ.) for fast switching with reduced drive loss.

Technical Context

This MOSFET employs a planar silicon process optimized for ruggedness in repetitive switching and single-pulse avalanche conditions. Its gate threshold voltage (V_GS(th)) ranges from 1.5 V to 2.5 V at I_D = 250 µA, supporting reliable turn-on with 4.5–5.0 V logic-level gate drive while maintaining noise immunity.

The device integrates a body diode with 1.0 V forward voltage at I_F = 22 A and exhibits 37 ns reverse recovery time (trr) under di/dt = 100 A/µs - critical for synchronous rectification and freewheeling in buck and half-bridge topologies where diode conduction losses dominate efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - supports 48 V nominal bus systems with 15% margin for transients and ripple.
R_DS(on)1	37 mΩ max at V_GS = 10 V, I_D = 11 A - enables ≤0.45 W conduction loss at 11 A, reducing heatsink requirements.
I_D(DC)	±22 A at T_C = 25°C - delivers high peak load current in motor H-bridge or power supply output stages.
C_iss	730 pF typ. at V_DS = 25 V - lowers gate drive power and improves switching speed in high-frequency SMPS designs.
E_AS	19 mJ at I_AS = 14 A - sustains single-pulse inductive energy without failure during overcurrent events in relay or solenoid drivers.
T_ch	175°C rated - allows operation in sealed enclosures or high-ambient environments without derating below full current.

Pinout & Package

NP22N055SLE-E2-AY uses the TO-252 (JEDEC) / MP-3ZK surface-mount package with exposed drain pad for enhanced thermal dissipation. The package measures 10.4 mm × 6.5 mm × 1.14 mm (max) and features gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives gate drive signal; requires external series resistor (RG) to control dV/dt and suppress ringing during switching.
2 (Drain)	Main current path (high-side)	Connected to high-voltage rail; thermally tied to large copper pour via exposed fin for R_th(ch-C) = 3.33°C/W.
3 (Source)	Reference node / return path	Serves as local ground reference for gate drive; must be low-inductance to minimize shoot-through risk in bridge configurations.
4 (Fin / Drain)	Thermal & electrical connection	Exposed metal tab electrically connected to Drain; must be soldered to PCB thermal pad for safe power handling up to 45 W (T_C = 25°C).

Key Features

Feature	Design Value
175°C channel temperature rating	Enables sustained operation in sealed industrial enclosures without forced air cooling or oversized heatsinks.
Built-in gate protection diode	Provides ESD robustness per JESD22-A114 (HBM ≥ 2 kV), reducing need for external TVS on gate traces.
Low R_DS(on)2 = 45 mΩ max at V_GS = 5.0 V	Supports direct interface with 5 V microcontrollers or logic ICs without level-shifting circuitry.
Single-pulse avalanche capability	Guarantees survivability under inductive switching stress (e.g., motor phase commutation) without external snubbers.
Body diode with low V_F(S-D) = 1.0 V	Reduces freewheeling losses in non-synchronous buck converters and simplifies layout by eliminating discrete flyback diodes.

Applications

Industrial Motor Drives	DC-DC Converters
Use Scenario: Driving 24–48 V brushed DC motors in factory automation actuators and conveyor modules. IC Role / Device Role / Timing Role: High-side or low-side switch in H-bridge configuration, handling bidirectional 15–20 A peak currents with <20 ns rise/fall times. Use Value: Low R_DS(on) and 175°C rating allow full-load operation in unventilated control cabinets, extending system MTBF.	Use Scenario: Synchronous rectifier in 48 V input, 12 V/20 A isolated DC-DC modules for telecom power shelves. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diodes to reduce conduction loss and improve efficiency above 92%. Use Value: 37 mΩ R_DS(on) cuts rectifier loss by >60% vs. 40 V Schottky, directly lowering thermal design complexity.
Power Supplies	Automated Test Equipment
Use Scenario: Primary-side switching element in 55 V-rated offline flyback or forward converters for industrial PLC power supplies. IC Role / Device Role / Timing Role: Fast-switching power switch with 9 ns turn-on delay and 6 ns rise time, enabling >300 kHz operation. Use Value: Low C_iss (730 pF) minimizes gate drive loss, allowing use of low-power gate drivers like TC4427.	Use Scenario: Solid-state relay replacement in programmable load banks and precision current sourcing circuits. IC Role / Device Role / Timing Role: High-reliability, low-leakage (I_DSS ≤ 10 µA) switching element controlling 0–22 A test loads with microsecond response. Use Value: Guaranteed 175°C channel rating ensures stable parametric behavior across extended burn-in cycles at elevated ambient temperatures.

Industrial Motor Drives

DC-DC Converters

Use Scenario: Driving 24–48 V brushed DC motors in factory automation actuators and conveyor modules.

IC Role / Device Role / Timing Role: High-side or low-side switch in H-bridge configuration, handling bidirectional 15–20 A peak currents with <20 ns rise/fall times.

Use Value: Low R_DS(on) and 175°C rating allow full-load operation in unventilated control cabinets, extending system MTBF.

Use Scenario: Synchronous rectifier in 48 V input, 12 V/20 A isolated DC-DC modules for telecom power shelves.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diodes to reduce conduction loss and improve efficiency above 92%.

Use Value: 37 mΩ R_DS(on) cuts rectifier loss by >60% vs. 40 V Schottky, directly lowering thermal design complexity.

Power Supplies

Automated Test Equipment

Use Scenario: Primary-side switching element in 55 V-rated offline flyback or forward converters for industrial PLC power supplies.

IC Role / Device Role / Timing Role: Fast-switching power switch with 9 ns turn-on delay and 6 ns rise time, enabling >300 kHz operation.

Use Value: Low C_iss (730 pF) minimizes gate drive loss, allowing use of low-power gate drivers like TC4427.

Use Scenario: Solid-state relay replacement in programmable load banks and precision current sourcing circuits.

IC Role / Device Role / Timing Role: High-reliability, low-leakage (I_DSS ≤ 10 µA) switching element controlling 0–22 A test loads with microsecond response.

Use Value: Guaranteed 175°C channel rating ensures stable parametric behavior across extended burn-in cycles at elevated ambient temperatures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 28 mΩ @ 10 V but only rated to 55 V/49 A; no specified avalanche energy; TO-220 package.	Larger footprint and higher thermal resistance (R_th(j-a) ≈ 62°C/W) limits use in space-constrained SMT designs.	Prefer NP22N055SLE-E2-AY when board area, thermal performance, or avalanche ruggedness are critical.
STP22NF55	Same V_DSS/I_D ratings but R_DS(on) = 50 mΩ @ 10 V; C_iss = 1050 pF; TO-220 package.	Higher gate charge (Q_G = 32 nC vs. 23 nC) increases driver loss and slows switching in high-frequency converters.	Choose NP22N055SLE-E2-AY for lower conduction + switching loss trade-off in compact, high-efficiency designs.

Compared with IRFZ44NPBF and STP22NF55, NP22N055SLE-E2-AY offers superior thermal management via TO-252 package, verified single-pulse avalanche capability, and lower combined conduction/switching loss - making it optimal for high-density industrial power stages where reliability and efficiency are jointly constrained.

Availability

NP22N055SLE-E2-AY is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and automated test equipment requiring stable component supply and long-term manufacturability.

Supply support for NP22N055SLE-E2-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

NP22N055SLE-E2-AY belongs to Renesas' legacy power MOSFET portfolio developed for rugged, high-current switching in industrial automation and power conversion - emphasizing thermal resilience, avalanche robustness, and compatibility with standard logic-level gate drivers.

FAQ

What is the maximum continuous drain current rating for NP22N055SLE-E2-AY at 100°C case temperature?

At T_C = 100°C, the maximum continuous drain current for NP22N055SLE-E2-AY is derated to approximately 14.5 A, based on the linear derating curve from 22 A at 25°C and R_th(ch-C) = 3.33°C/W. This value is confirmed in Figure 2 of the D14136EJ4V0DS datasheet and ensures safe operation without exceeding the 175°C channel limit.

Does NP22N055SLE-E2-AY support 5 V logic-level gate drive?

Yes, NP22N055SLE-E2-AY is fully compatible with 5 V logic-level gate drive: its R_DS(on)2 is guaranteed ≤45 mΩ at V_GS = 5.0 V and I_D = 11 A. The gate threshold voltage range (1.5–2.5 V) provides sufficient margin against noise-induced turn-on while ensuring strong enhancement-mode behavior.

What is the purpose of the fourth terminal (Fin) on NP22N055SLE-E2-AY?

The fourth terminal (Fin) on NP22N055SLE-E2-AY is an exposed drain pad integral to the TO-252 (JEDEC) / MP-3ZK package. It serves dual roles: electrically connecting to the drain and providing primary thermal conduction path to the PCB. Proper soldering to a thermal pad is mandatory to achieve the specified R_th(ch-C) = 3.33°C/W and 45 W power dissipation rating.

Is NP22N055SLE-E2-AY RoHS compliant?

Yes, NP22N055SLE-E2-AY complies with the EU RoHS Directive. Renesas Electronics confirms environmental compliance for this part in accordance with its corporate policy and regulatory requirements, including restriction of lead, cadmium, mercury, hexavalent chromium, PBB, and PBDE. Full material declarations are available upon request through Renesas sales offices.

Can NP22N055SLE-E2-AY replace NP22N055ILE in existing designs?

NP22N055SLE-E2-AY can replace NP22N055ILE only if the PCB layout accommodates the TO-252 (JEDEC) / MP-3ZK footprint, which differs mechanically from the TO-252 (JEITA) / MP-3Z used by NP22N055ILE. While both share identical electrical specifications, the JEDEC variant has distinct lead pitch and thermal pad dimensions - requiring layout verification before substitution.

NP22N055SLE-E2-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: 22A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

NP22N055SLE-E2-AY FAQ

1.How can I place an order for NP22N055SLE-E2-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP22N055SLE-E2-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP22N055SLE-E2-AY reliable?

The price and inventory of NP22N055SLE-E2-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP22N055SLE-E2-AY is usually 5 days.

3.What payment methods are accepted for NP22N055SLE-E2-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP22N055SLE-E2-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP22N055SLE-E2-AY?

NP22N055SLE-E2-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP22N055SLE-E2-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP22N055SLE-E2-AY?

For technical support, including NP22N055SLE-E2-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP22N055SLE-E2-AY requirements.

6.How does Aetrix verify that NP22N055SLE-E2-AY is sourced from the original manufacturer or authorized distributors?

All NP22N055SLE-E2-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP22N055SLE-E2-AY meets industry standards.

7.What is the process for return or replacement of NP22N055SLE-E2-AY?

All NP22N055SLE-E2-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP22N055SLE-E2-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP22N055SLE-E2-AY part is unused and in its original packaging.

Return procedure for NP22N055SLE-E2-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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