My Inquiry
My Account
Renesas NP28N10SDE-E1-AY
- Part No.:
- NP28N10SDE-E1-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
NP28N10SDE-E1-AY.pdf
- Description:
- NP28N10SDE-E1-AY - MOS FIELD EFF
- Quantity:
- Payment:
- Shipping:
Inventory:2,500
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NP28N10SDE-E1-AY from Renesas Electronics is an AEC-Q101-qualified N-channel power MOSFET designed for high-current DC switching in automotive powertrain and body control modules. It delivers 28 A continuous drain current at 25°C case temperature, supports 100 V drain-source blocking voltage, and achieves RDS(on) as low as 41 mΩ at VGS = 10 V - enabling efficient 12 V/24 V battery-fed motor drivers and solenoid controls.
For engineers reviewing the NP28N10SDE-E1-AY datasheet, NP28N10SDE-E1-AY pinout, NP28N10SDE-E1-AY application, or NP28N10SDE-E1-AY equivalent, key selection criteria include its TO-252 (MP-3ZK) package thermal resistance (Rth(ch-C) = 1.50°C/W), avalanche energy rating (EAS = 58 mJ), and gate charge profile (QG = 49–75 nC) for PWM-driven load switching.
Technical Context
This MOSFET employs a planar trench-gate structure optimized for low conduction loss and robust unclamped inductive switching (UIS) performance. Its threshold voltage range (1.5–2.5 V) ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers while maintaining noise immunity under automotive transients.
The device integrates a fast-recovery body diode (trr = 73 ns, Qrr = 175 nC) and exhibits low output capacitance (Coss = 160–240 pF) to minimize switching losses in hard-switched topologies operating up to 100 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - supports full 24 V automotive system derating with margin against load dump transients |
| RDS(on) max @ VGS=10 V | 52 mΩ - enables ≤1.5 W conduction loss at 28 A DC, reducing heatsink requirements |
| ID(DC) | ±28 A - rated for continuous operation at TC = 25°C on standard 40 mm × 40 mm PCB copper area |
| EAS | 58 mJ - withstands single-pulse inductive energy without failure in solenoid or motor phase-leg applications |
| QG | 49–75 nC - determines gate drive power and switching speed in 10–100 kHz PWM circuits |
| tr/tf | 9–23 ns / 5–13 ns - supports fast edge rates with minimal EMI in space-constrained automotive ECUs |
| Rth(ch-C) | 1.50°C/W - allows direct mounting to metal chassis or heatsink for high-power thermal management |
Pinout & Package
NP28N10SDE-E1-AY is housed in a surface-mount TO-252 (MP-3ZK) package with exposed drain tab for thermal and electrical connection. The 3-pin configuration supports high-current routing with low-inductance layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: Gate | Control input | Receives gate drive signal; requires <2.5 V threshold to initiate conduction; sensitive to ESD |
| 2: Drain | High-side power node | Connected to load supply rail; electrically tied to exposed metal tab for thermal path and current return |
| 3: Source | Power return / reference | Serves as common return for load current and gate driver ground; defines VGS reference point |
| 4: Fin (Drain) | Thermal & electrical extension | Exposed copper pad soldered to PCB copper pour; provides primary heat dissipation path and low-impedance drain connection |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive underhood environments including temperature cycling, humidity, and mechanical shock per JESD22 standards |
| Low RDS(on) at 4.5 V | 59 mΩ max - enables direct drive from 5 V microcontrollers without level-shifting, reducing BOM count |
| High UIS ruggedness | IAS = 24 A, EAS = 58 mJ - sustains repeated inductive turn-off stress in relay replacement and motor commutation |
| Fast body diode recovery | trr = 73 ns - minimizes reverse recovery loss and voltage overshoot in synchronous rectification or H-bridge freewheeling |
| Pb-free construction | Meets RoHS Directive 2011/65/EU; pure Sn plating on external electrodes eliminates lead contamination risk in assembly |
Applications
| Automotive HVAC Blower Control | 12 V Starter Solenoid Driver |
|---|---|
Use Scenario: PWM-controlled DC motor driving cabin air circulation fan in passenger vehicles. IC Role / Device Role / Timing Role: High-side switch regulating motor speed via duty-cycle modulation at 20–50 kHz. Use Value: Low RDS(on) (41 mΩ typ.) reduces I²R heating during continuous 15–25 A operation, extending fan module lifetime. | Use Scenario: Solid-state replacement of electromechanical starter solenoid in 12 V engine start-stop systems. IC Role / Device Role / Timing Role: Single-pole, high-current switch energizing starter motor coil for <500 ms cranking pulses. Use Value: 60 A pulse rating and 58 mJ avalanche energy ensure reliable operation during battery voltage sag and inductive kickback. |
| Commercial Vehicle Lighting Dimming | Electric Power Steering (EPS) Phase Leg |
Use Scenario: Analog dimming of LED headlamp arrays using linear or quasi-linear current regulation. IC Role / Device Role / Timing Role: Low-frequency (≤1 kHz) pass element controlling LED string current with analog feedback. Use Value: Tight VGS(th) distribution (1.5–2.5 V) enables precise gate biasing for stable current regulation across temperature. | Use Scenario: Half-bridge upper switch in three-phase EPS motor inverter operating at 8–16 kHz PWM. IC Role / Device Role / Timing Role: Fast-switching power stage component handling 20–30 A peak phase current. Use Value: Low Ciss (2200 pF typ.) and QG (49 nC min.) reduce gate drive losses and improve efficiency at high switching frequencies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | 100 V, 220 A pulsed, RDS(on) = 3.2 mΩ @ 10 V, DFN8 5×6 package | Higher current density but requires multi-layer PCB thermal design; not AEC-Q101 qualified | Select when board space is constrained and automotive qualification is not required |
| IRF3205PBF | 55 V, 110 A pulsed, RDS(on) = 8.0 mΩ @ 10 V, TO-220AB package | Lower voltage rating limits use to 12 V systems only; through-hole mounting increases assembly cost | Select for cost-sensitive 12 V industrial motor drives where 100 V margin is unnecessary |
Compared with STL220N10F7 and IRF3205PBF, the NP28N10SDE-E1-AY offers balanced 100 V capability, AEC-Q101 compliance, and TO-252 thermal performance - making it optimal for automotive body electronics where reliability, voltage margin, and surface-mount manufacturability are jointly critical.
Availability
NP28N10SDE-E1-AY is available at Aetrix Electronics and suitable for automotive body control modules, commercial vehicle lighting systems, and industrial motor drives requiring stable component supply and long-term lifecycle support.
Supply support for NP28N10SDE-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT applications.
The NP28N10SDE-E1-AY belongs to Renesas' automotive-qualified power MOSFET product line, engineered specifically for high-reliability 12 V/24 V switched-mode power control in harsh-temperature, high-vibration environments.
FAQ
What is the maximum continuous drain current rating for NP28N10SDE-E1-AY at 100°C case temperature?
The NP28N10SDE-E1-AY supports 28 A continuous drain current only at TC = 25°C. At 100°C case temperature, its derated ID(DC) drops to approximately 14 A based on the forward-bias safe operating area curve and Rth(ch-C) = 1.50°C/W. This derating must be applied in thermal design for NP28N10SDE-E1-AY in enclosed automotive enclosures.
Does NP28N10SDE-E1-AY require a gate resistor for automotive ECU applications?
Yes - a gate resistor (typically 10–47 Ω) is recommended for NP28N10SDE-E1-AY to control dV/dt and prevent parasitic oscillation during switching, especially when driving inductive loads like solenoids or motors. The datasheet specifies switching times measured with RG = 0 Ω, but real-world layouts demand controlled gate ring-up/down to meet EMC requirements in automotive ECUs using NP28N10SDE-E1-AY.
Is NP28N10SDE-E1-AY compatible with standard reflow profiles for lead-free PCB assembly?
Yes - NP28N10SDE-E1-AY uses pure Sn (tin) plating and is rated for JEDEC J-STD-020D-compliant lead-free reflow, with peak temperature up to 260°C for 30 seconds. Its TO-252 package and internal construction tolerate standard Pb-free thermal profiles without delamination or parameter shift, supporting high-yield manufacturing of boards containing NP28N10SDE-E1-AY.
Can NP28N10SDE-E1-AY be used in parallel configurations for higher current handling?
NP28N10SDE-E1-AY features positive temperature coefficient RDS(on), enabling stable current sharing in parallel configurations - but only with matched gate drive layout, identical PCB copper area, and individual gate resistors. Thermal coupling between devices must be minimized; parallel use of NP28N10SDE-E1-AY is validated in Renesas application notes for EPS and HVAC inverters.
What is the body diode forward voltage specification for NP28N10SDE-E1-AY at 28 A?
The body diode forward voltage (VF(S-D)) for NP28N10SDE-E1-AY is specified as 1.0–1.5 V at IF = 28 A and VGS = 0 V. This low VF supports efficient freewheeling in half-bridge and synchronous rectifier topologies, directly impacting conduction loss in NP28N10SDE-E1-AY-based motor drivers and DC-DC converters.
NP28N10SDE-E1-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 52mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 75 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.2W (Ta), 100W (Tc)
- Operating Temperature:
- 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (MP-3ZK)
NP28N10SDE-E1-AY FAQ
1.How can I place an order for NP28N10SDE-E1-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for NP28N10SDE-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NP28N10SDE-E1-AY reliable?
The price and inventory of NP28N10SDE-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP28N10SDE-E1-AY is usually 5 days.
3.What payment methods are accepted for NP28N10SDE-E1-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP28N10SDE-E1-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NP28N10SDE-E1-AY?
NP28N10SDE-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NP28N10SDE-E1-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NP28N10SDE-E1-AY?
For technical support, including NP28N10SDE-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP28N10SDE-E1-AY requirements.
6.How does Aetrix verify that NP28N10SDE-E1-AY is sourced from the original manufacturer or authorized distributors?
All NP28N10SDE-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP28N10SDE-E1-AY meets industry standards.
7.What is the process for return or replacement of NP28N10SDE-E1-AY?
All NP28N10SDE-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP28N10SDE-E1-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NP28N10SDE-E1-AY part is unused and in its original packaging.
Return procedure for NP28N10SDE-E1-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NP28N10SDE-E1-AY Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
