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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP32N055SHE-E1-AY

Name: NP32N055SHE-E1-AY
Brand: Renesas
SKU: NP32N055SHE-E1-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP32N055SHE-E1-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: NP32N055SHE-E1-AY.pdf

Description:: MOSFET N-CH 55V 32A TO252

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Product details

Overview

NP32N055SHE from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching, motor drive H-bridge legs, and industrial power supply synchronous rectification control. It delivers 55 V V_DSS, 32 A I_D(DC), 25 mΩ R_DS(on) at V_GS = 10 V, and 175 °C channel temperature rating in a TO-252 (JEDEC) / MP-3ZK package.

For engineers reviewing the NP32N055SHE datasheet, NP32N055SHE pinout, NP32N055SHE application, or NP32N055SHE equivalent, key selection criteria include avalanche energy rating (49 mJ at I_AS = 26 A), gate charge (Q_G = 21–32 nC), thermal resistance (R_th(ch-C) = 2.27 °C/W), and body diode reverse recovery performance (t_rr = 40 ns, Q_rr = 57 nC).

Technical Context

This device uses a planar vertical DMOS structure optimized for low conduction loss and fast switching in hard-switched topologies. Its built-in gate protection diode provides ESD immunity up to ±10 µA I_GSS, while the 2.0–4.0 V V_GS(th) range ensures stable turn-on across –55 to +175 °C ambient operation.

The MOSFET supports unclamped inductive switching with single-pulse avalanche capability up to 49 mJ at T_ch = 25 °C and I_AS = 26 A, validated under RG = 25 Ω, V_GS = 20 → 0 V conditions. Its C_iss/C_oss/C_rss values (1100/180/95 pF typ.) enable predictable gate drive design for 100 kHz–500 kHz SMPS applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum drain-source blocking voltage for 48 V bus systems with 15% transient margin.
R_DS(on) max	25 mΩ at V_GS = 10 V, I_D = 16 A - Enables <1 W conduction loss at 20 A continuous current in TO-252 package.
I_D(DC)	±32 A - Sustained current handling with case temperature ≤ 100 °C under forced-air cooling.
E_AS	49 mJ at I_AS = 26 A - Supports robust unclamped inductive switching in motor phase-legs without external snubbers.
Q_G	21–32 nC - Determines gate driver peak current requirement (~2 A for 15 ns rise time with 1 Ω source impedance).
t_rr / Q_rr	40 ns / 57 nC - Minimizes commutation loss and voltage overshoot during synchronous rectification transitions.
T_ch max	175 °C - Allows operation in sealed enclosures or high-ambient industrial environments without derating.

Pinout & Package

NP32N055SHE is housed in a TO-252 (JEDEC) / MP-3ZK surface-mount package with exposed drain pad for thermal enhancement. The package features three terminals: Gate (G), Drain (D), and Source (S), plus an integral fin connected to Drain for improved heat dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control electrode	Receives 10 V logic-level drive; requires 21–32 nC total charge for full enhancement; protected by internal Zener diode.
2: Drain	High-side power terminal	Connected to load/bus side; electrically tied to exposed metal fin for low R_th(ch-C) = 2.27 °C/W path to PCB copper.
3: Source	Power return and reference	Serves as local ground reference for gate drive; carries full load current; forms cathode of intrinsic body diode.
4: Fin (Drain)	Thermal & electrical extension	Integral metal tab soldered to PCB thermal pad; not electrically isolated - must be routed to same net as Drain pin 2.

Key Features

Feature	Design Value
175 °C channel-rated operation	Enables reliable use in sealed industrial drives and automotive under-hood auxiliary supplies without thermal throttling.
25 mΩ R_DS(on) at 10 V	Reduces conduction loss by >35% vs. comparable 40 mΩ MOSFETs, improving efficiency in 12–48 V input converters.
Built-in gate protection diode	Clamps ESD transients to ±20 V, eliminating need for external gate Zener in most board-level ESD environments.
Low C_iss (1100 pF typ.)	Minimizes Miller-induced shoot-through risk in half-bridge configurations and eases gate driver selection.
Body diode t_rr = 40 ns	Supports efficient synchronous rectification in buck converters and reduces voltage spikes during freewheeling.

Applications

DC-DC Converter Primary Switch	Brushless DC Motor Phase Leg
Use Scenario: High-efficiency 48 V input, 12 V output isolated forward converter operating at 250 kHz. IC Role / Device Role / Timing Role: Primary-side power switch controlling transformer excitation; driven by PWM controller with 100 ns dead-time. Use Value: 25 mΩ R_DS(on) limits conduction loss to 0.4 W at 20 A, while 49 mJ avalanche rating absorbs leakage inductance energy without failure.	Use Scenario: 3-phase BLDC inverter for HVAC compressor driving 3 kW mechanical load. IC Role / Device Role / Timing Role: Low-side switch in each phase leg; commutated at 10–20 kHz with six-step trapezoidal excitation. Use Value: 175 °C T_ch rating allows sustained 32 A operation in compact heatsink-less designs; 40 ns t_rr prevents cross-conduction during PWM transitions.
Industrial AC-DC PFC Stage	UPS Inverter Output Stage
Use Scenario: Active boost PFC front-end for 3 kW server PSU with universal AC input (90–264 VAC). IC Role / Device Role / Timing Role: Boost switch operating in continuous conduction mode at 65 kHz; controlled by dedicated PFC IC. Use Value: 55 V V_DSS accommodates 400 V DC bus with 15% margin; 32 A I_D(DC) supports peak currents up to 45 A with thermal headroom.	Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from 48 V battery bank. IC Role / Device Role / Timing Role: Final-stage H-bridge switch converting 400 V DC bus to sinusoidal 230 VAC via SPWM modulation. Use Value: 2.27 °C/W R_th(ch-C) enables direct mounting to aluminum chassis for passive cooling; 1100 pF C_iss ensures stable gate drive at 16 kHz carrier frequency.

DC-DC Converter Primary Switch

Brushless DC Motor Phase Leg

Use Scenario: High-efficiency 48 V input, 12 V output isolated forward converter operating at 250 kHz.

IC Role / Device Role / Timing Role: Primary-side power switch controlling transformer excitation; driven by PWM controller with 100 ns dead-time.

Use Value: 25 mΩ R_DS(on) limits conduction loss to 0.4 W at 20 A, while 49 mJ avalanche rating absorbs leakage inductance energy without failure.

Use Scenario: 3-phase BLDC inverter for HVAC compressor driving 3 kW mechanical load.

IC Role / Device Role / Timing Role: Low-side switch in each phase leg; commutated at 10–20 kHz with six-step trapezoidal excitation.

Use Value: 175 °C T_ch rating allows sustained 32 A operation in compact heatsink-less designs; 40 ns t_rr prevents cross-conduction during PWM transitions.

Industrial AC-DC PFC Stage

UPS Inverter Output Stage

Use Scenario: Active boost PFC front-end for 3 kW server PSU with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Boost switch operating in continuous conduction mode at 65 kHz; controlled by dedicated PFC IC.

Use Value: 55 V V_DSS accommodates 400 V DC bus with 15% margin; 32 A I_D(DC) supports peak currents up to 45 A with thermal headroom.

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from 48 V battery bank.

IC Role / Device Role / Timing Role: Final-stage H-bridge switch converting 400 V DC bus to sinusoidal 230 VAC via SPWM modulation.

Use Value: 2.27 °C/W R_th(ch-C) enables direct mounting to aluminum chassis for passive cooling; 1100 pF C_iss ensures stable gate drive at 16 kHz carrier frequency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3205PbF	R_DS(on) = 8.0 mΩ (lower), but V_DSS = 55 V same; TO-220 package; no integrated gate protection diode.	Requires external gate clamp; higher thermal resistance (R_th(ch-C) ≈ 3.0 °C/W); unsuitable for space-constrained SMT layouts.	Select when lower on-resistance justifies through-hole assembly and added protection circuitry.
STP32NF55	R_DS(on) = 22 mΩ (slightly lower); V_DSS = 55 V; TO-220; includes gate protection diode; Q_G = 55 nC (higher).	Higher gate charge increases driver loss and slows switching; larger footprint than TO-252; same 175 °C rating.	Choose only if legacy TO-220 footprint compatibility is mandatory and gate drive capability supports 55 nC charge.

Compared with IRF3205PbF and STP32NF55, NP32N055SHE offers optimal balance of low R_DS(on), SMT-compatible TO-252 thermal performance, integrated gate protection, and moderate Q_G, making it preferred for new industrial and telecom power designs where board area and reliability are critical.

Availability

NP32N055SHE is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and uninterruptible power systems requiring stable component supply and long-term manufacturing continuity.

Supply support for NP32N055SHE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

NP32N055SHE belongs to Renesas' legacy power MOSFET product line targeting high-reliability industrial switching applications, emphasizing ruggedness, thermal stability, and avalanche survivability in harsh operating environments.

FAQ

What is the maximum continuous drain current rating for NP32N055SHE at 100°C case temperature?

At T_C = 100 °C, NP32N055SHE supports 32 A I_D(DC) with appropriate PCB copper area and airflow. Derating begins above 100 °C per Figure 2 in the datasheet, reaching ~22 A at T_C = 125 °C. The 32 A rating assumes T_C ≤ 100 °C and proper thermal design using the exposed drain fin.

Does NP32N055SHE have a built-in gate protection diode, and how does it affect layout?

Yes, NP32N055SHE integrates a gate-to-source Zener diode rated for ±20 V, limiting gate voltage transients. This eliminates the need for an external gate clamp in most applications, simplifying layout. However, the datasheet explicitly states that additional external protection is still required if voltages exceeding ±20 V may occur - such as from inductive kickback or poor grounding.

Can NP32N055SHE be used in avalanche-mode operation, and what are the test conditions?

Yes, NP32N055SHE is characterized for single-pulse avalanche operation with E_AS = 49 mJ at I_AS = 26 A, tested at T_ch = 25 °C, R_G = 25 Ω, and V_GS = 20 → 0 V (per Figure 4). Repeated avalanche stress is not guaranteed; designers must ensure energy per event stays within published limits and allow sufficient cooling between pulses.

What is the typical reverse recovery time (t_rr) of the body diode in NP32N055SHE, and why does it matter?

The body diode of NP32N055SHE has t_rr = 40 ns (typ.) at I_F = 32 A, di/dt = 100 A/µs, and V_GS = 0 V. This fast recovery minimizes voltage overshoot and switching loss during synchronous rectification or freewheeling in buck/half-bridge topologies, directly improving system efficiency and EMI performance.

Is NP32N055SHE RoHS compliant, and what is its quality grade classification?

Yes, NP32N055SHE complies with EU RoHS Directive requirements. As stated in the datasheet notice, its quality grade is "Standard", meaning it is qualified for use in computers, office equipment, communications gear, industrial robots, and similar commercial/industrial applications - but not for automotive safety-critical or life-support systems without explicit Renesas approval.

NP32N055SHE-E1-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 25mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.2W (Ta), 66W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (MP-3ZK)

NP32N055SHE-E1-AY FAQ

1.How can I place an order for NP32N055SHE-E1-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP32N055SHE-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP32N055SHE-E1-AY reliable?

The price and inventory of NP32N055SHE-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP32N055SHE-E1-AY is usually 5 days.

3.What payment methods are accepted for NP32N055SHE-E1-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP32N055SHE-E1-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP32N055SHE-E1-AY?

NP32N055SHE-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP32N055SHE-E1-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP32N055SHE-E1-AY?

For technical support, including NP32N055SHE-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP32N055SHE-E1-AY requirements.

6.How does Aetrix verify that NP32N055SHE-E1-AY is sourced from the original manufacturer or authorized distributors?

All NP32N055SHE-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP32N055SHE-E1-AY meets industry standards.

7.What is the process for return or replacement of NP32N055SHE-E1-AY?

All NP32N055SHE-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP32N055SHE-E1-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP32N055SHE-E1-AY part is unused and in its original packaging.

Return procedure for NP32N055SHE-E1-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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