Renesas NP36N055HLE-AY

Overview

NP36N055HLE from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching, motor drive half-bridge legs, and industrial power supply synchronous rectification control. It delivers 36 A continuous drain current, 55 V drain-source breakdown voltage, and 13 mΩ R_DS(on) at V_GS = 10 V with 175°C channel temperature rating.

For engineers reviewing the NP36N055HLE datasheet, NP36N055HLE pinout, NP36N055HLE application, or NP36N055HLE equivalent, key selection criteria include its low gate charge (53–80 nC), avalanche-rated ruggedness (12 mJ E_AS), TO-251 package thermal resistance (1.25°C/W ch-to-case), and dual-threshold on-resistance specs at 4.5 V, 5 V, and 10 V gate drive.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for fast switching in hard-switched topologies. Its gate threshold voltage (1.5–2.5 V) enables compatibility with 3.3 V and 5 V logic-level controllers, while the built-in gate protection diode mitigates ESD risk during handling and PCB assembly.

The device supports unclamped inductive switching (UIS) with single-pulse avalanche energy up to 12 mJ at T_ch = 25°C and 108 mJ at T_ch = 175°C. Its C_iss of 2900 pF (typ.) and Q_G of 53 nC (min.) support efficient gate driving in 100–500 kHz SMPS designs without excessive driver loss.

Key Specifications

Pinout & Package

NP36N055HLE uses the TO-251 (JEITA) / MP-3 package: a 3-lead, single-ended, surface-mountable variant of TO-220 with isolated tab (Drain-connected fin). The package features 1.25°C/W channel-to-case thermal resistance and is compatible with standard SMT reflow profiles when mounted on copper pads with thermal vias.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP36NF55 and IRF3205, NP36N055HLE offers superior gate-drive efficiency at 4.5–5 V logic levels, documented avalanche energy, and TO-251 SMT compatibility-making it optimal for space-constrained, high-reliability industrial power stages.

Availability

NP36N055HLE is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, automotive body control modules, and PLC output stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for NP36N055HLE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

NP36N055HLE belongs to Renesas' legacy power MOSFET portfolio developed for high-efficiency, high-reliability switching in industrial and computing power systems-prioritizing ruggedness, thermal stability, and logic-level drivability.

FAQ

What is the maximum continuous drain current for NP36N055HLE at 100°C case temperature?

At T_C = 100°C, NP36N055HLE's continuous drain current is derated to approximately 20 A, based on the total power dissipation curve in Figure 2 of the datasheet (D14156EJ4V0DS). This reflects thermal limitation-not electrical-so proper PCB copper area and thermal vias are essential to sustain this current in real-world conditions. The NP36N055HLE maintains full 36 A rating only at T_C = 25°C.

Does NP36N055HLE support logic-level gate drive from a 3.3 V microcontroller?

NP36N055HLE has a gate threshold voltage range of 1.5–2.5 V, so it will turn on with 3.3 V gate drive-but R_DS(on) rises significantly: 18 mΩ max at V_GS = 4.5 V and 16 mΩ max at V_GS = 5 V. At 3.3 V, conduction loss increases beyond datasheet specs. For reliable 3.3 V operation, a gate driver IC is recommended to ensure full enhancement. The NP36N055HLE is not a true 3.3 V logic-level MOSFET.

Is the TO-251 package of NP36N055HLE lead-free and RoHS-compliant?

Yes, NP36N055HLE complies with EU RoHS Directive requirements. Renesas confirms environmental compliance in its product change notices and material declarations. The TO-251 package uses lead-free matte tin plating on terminals, and the device meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 for reflow soldering. Always verify latest compliance status via Renesas' official product page for NP36N055HLE before high-volume production.

Can NP36N055HLE replace NP36N055ILE in a PCB design?

No-NP36N055HLE (TO-251) and NP36N055ILE (TO-252) have different footprints, thermal pad layouts, and mechanical dimensions. While both share identical electrical specs, the TO-251's single-ended lead configuration and isolated fin require distinct land patterns and thermal via placement versus TO-252's gull-wing leads. Swapping them requires PCB redesign. The NP36N055HLE is not a drop-in replacement for NP36N055ILE.

What is the body diode reverse recovery charge (Q_rr) of NP36N055HLE, and why does it matter?

NP36N055HLE specifies Q_rr = 60 nC under test conditions of I_F = 36 A, di/dt = 100 A/µs, and V_GS = 0 V. This parameter directly impacts switching loss and EMI in synchronous rectifier or freewheeling applications: higher Q_rr increases turn-on loss in the complementary switch and generates voltage spikes. Designers must account for Q_rr when selecting gate drive timing and snubbing in bidirectional topologies using NP36N055HLE.