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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP40N055KHE-E1-AY

Name: NP40N055KHE-E1-AY
Brand: Renesas
SKU: NP40N055KHE-E1-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP40N055KHE-E1-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: NP40N055KHE-E1-AY.pdf

Description:: TRANSISTOR

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Product details

Overview

NP40N055KHE-E1-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor control circuits, featuring R_DS(on) = 23 mΩ max at V_GS = 10 V and I_D = 20 A, 55 V V_DSS, and TO-263 (MP-25ZK) surface-mount package with 1.5 g mass.

For engineers reviewing the NP40N055KHE-E1-AY datasheet, NP40N055KHE-E1-AY pinout, NP40N055KHE-E1-AY application, or NP40N055KHE-E1-AY equivalent, this device is selected for high-efficiency 40 A continuous drain current switching where low conduction loss, fast turn-on/turn-off times (td(on) ≤ 35 ns), and avalanche ruggedness (EAS = 44–49 mJ) are critical.

Technical Context

This MOSFET employs a planar silicon process optimized for low R_DS(on) and controlled gate charge (Q_G = 23–35 nC), enabling efficient operation in hard-switched DC-DC converters and half-bridge motor drivers. Its built-in gate protection diode mitigates ESD risk, and the body diode supports synchronous rectification with VF(S-D) = 1.0 V at IF = 40 A.

The device operates within a channel temperature range of −55°C to +175°C and delivers rated performance under TC = 25°C conditions, with thermal resistance R_th(ch-C) = 2.27°C/W ensuring effective heat transfer to the PCB copper pour or heatsink. Avalanche capability is validated per test circuit 1 (V_DD = 28 V, R_G = 25 Ω, T_ch = 25°C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche breakdown; suitable for 48 V bus systems with margin.
R_DS(on) max	23 mΩ at V_GS = 10 V, I_D = 20 A - Enables <1 W conduction loss at 20 A, reducing heatsink requirements.
I_D(DC)	±40 A at T_C = 25°C - Supports high-current load switching without derating when mounted on adequate copper area.
Q_G	23–35 nC - Low gate charge enables fast switching with modest gate driver current (e.g., 1–2 A peak).
E_AS	44–49 mJ (single-pulse) - Confirmed avalanche energy rating allows reliable operation under inductive switching stress.
C_iss	1070–1610 pF - Input capacitance impacts gate drive loop stability and switching speed in high-frequency designs.
T_ch max	175°C - High channel temperature rating supports operation in thermally constrained industrial enclosures.

Pinout & Package

NP40N055KHE-E1-AY uses the TO-263 (MP-25ZK) surface-mount package with exposed drain tab for thermal and electrical connection. The package weighs 1.5 g and features 4 terminals: Gate (pin 1), Drain (pin 2 and tab), Source (pin 3), and Fin/Drain (pin 4).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives 10 V logic-level gate drive; threshold voltage V_GS(th) = 2.0–4.0 V ensures reliable turn-on with standard controllers.
2 (Drain)	Main power output	Connected to high-side load or bus; electrically and thermally tied to large copper pad via exposed tab.
3 (Source)	Power return reference	Serves as common source node for gate drive and current sensing; ties to ground or low-side switch source.
4 (Fin / Drain)	Secondary drain connection	Provides additional thermal path and current-carrying capacity; must be soldered to PCB copper for rated performance.

Key Features

Feature	Design Value
Super low R_DS(on)	23 mΩ max at 10 V gate drive - reduces I²R losses in high-current power stages, improving efficiency by >1% at 20 A.
Built-in gate protection diode	ESD-rated structure between gate and source - eliminates need for external TVS in basic layouts, simplifying BOM.
High avalanche energy rating	44–49 mJ single-pulse - enables robust operation in inductive load switching without snubber circuits.
Low input capacitance	C_iss = 1070 pF typ. - minimizes gate drive power and improves switching speed in 100–500 kHz applications.
Pb-free pure Sn plating	RoHS-compliant termination - meets EU directive requirements without compromising solderability or thermal cycling reliability.

Applications

Industrial Power Supply	Brushless DC Motor Driver
Use Scenario: Primary-side synchronous rectifier or secondary-side high-current switch in 48 V telecom power supplies. IC Role / Device Role / Timing Role: N-channel power switch handling up to 40 A DC load current with minimal conduction loss. Use Value: 23 mΩ R_DS(on) cuts conduction loss by ~30% vs. comparable 30 mΩ devices, directly lowering thermal design burden.	Use Scenario: Low-side switch in three-phase BLDC inverter driving fans, pumps, or compressors. IC Role / Device Role / Timing Role: Fast-turning N-MOSFET in half-bridge leg with td(on)/td(off) ≤ 35/57 ns for precise PWM timing control. Use Value: 35 nC total gate charge enables clean 20 kHz switching with low gate driver dissipation and reduced EMI.
DC-DC Converter	Uninterruptible Power System
Use Scenario: High-efficiency buck converter stage stepping down 48 V to 12 V for server rack subsystems. IC Role / Device Role / Timing Role: Main power switch operating in continuous conduction mode with 100–300 kHz switching frequency. Use Value: C_iss/C_rss ratio supports zero-voltage switching (ZVS) assist, reducing switching losses by up to 25%.	Use Scenario: Battery backup switching and inverter output stage in line-interactive UPS units. IC Role / Device Role / Timing Role: High-reliability power switch managing bidirectional energy flow during grid failure and recovery. Use Value: 175°C channel rating and 49 mJ avalanche energy ensure sustained operation during transient overloads and fault conditions.

Industrial Power Supply

Brushless DC Motor Driver

Use Scenario: Primary-side synchronous rectifier or secondary-side high-current switch in 48 V telecom power supplies.

IC Role / Device Role / Timing Role: N-channel power switch handling up to 40 A DC load current with minimal conduction loss.

Use Value: 23 mΩ R_DS(on) cuts conduction loss by ~30% vs. comparable 30 mΩ devices, directly lowering thermal design burden.

Use Scenario: Low-side switch in three-phase BLDC inverter driving fans, pumps, or compressors.

IC Role / Device Role / Timing Role: Fast-turning N-MOSFET in half-bridge leg with td(on)/td(off) ≤ 35/57 ns for precise PWM timing control.

Use Value: 35 nC total gate charge enables clean 20 kHz switching with low gate driver dissipation and reduced EMI.

DC-DC Converter

Uninterruptible Power System

Use Scenario: High-efficiency buck converter stage stepping down 48 V to 12 V for server rack subsystems.

IC Role / Device Role / Timing Role: Main power switch operating in continuous conduction mode with 100–300 kHz switching frequency.

Use Value: C_iss/C_rss ratio supports zero-voltage switching (ZVS) assist, reducing switching losses by up to 25%.

Use Scenario: Battery backup switching and inverter output stage in line-interactive UPS units.

IC Role / Device Role / Timing Role: High-reliability power switch managing bidirectional energy flow during grid failure and recovery.

Use Value: 175°C channel rating and 49 mJ avalanche energy ensure sustained operation during transient overloads and fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 20 mΩ (lower), but V_DSS = 40 V (lower); TO-220 package; no built-in gate protection diode.	Not suitable for 48 V bus systems due to lower breakdown voltage; requires external gate protection.	Select only if operating below 36 V and through-hole mounting is preferred.
STP40NF55	R_DS(on) = 22 mΩ, V_DSS = 55 V, TO-220 package; Q_G = 72 nC (higher); no integrated gate protection.	Higher gate charge increases driver complexity and switching loss; unsuitable for high-frequency (>150 kHz) designs.	Prefer NP40N055KHE-E1-AY for surface-mount, high-frequency, or ESD-sensitive environments.

Compared with IRF1404PBF and STP40NF55, NP40N055KHE-E1-AY offers superior thermal performance via TO-263 package, integrated gate protection, and optimized gate charge for high-frequency switching-making it the preferred choice for space-constrained, high-reliability industrial power modules.

Availability

NP40N055KHE-E1-AY is available at Aetrix Electronics and suitable for industrial power supplies, brushless DC motor drivers, and uninterruptible power systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for NP40N055KHE-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

NP40N055KHE-E1-AY belongs to Renesas' legacy N-channel power MOSFET product line, engineered for high-current, high-efficiency switching in industrial-grade power conversion and motor control applications.

FAQ

What is the maximum continuous drain current rating for NP40N055KHE-E1-AY?

The NP40N055KHE-E1-AY is rated for ±40 A DC drain current at case temperature T_C = 25°C. This rating assumes proper PCB copper area for thermal dissipation; derating applies above 25°C per the datasheet's derating curve. At T_C = 100°C, the usable I_D(DC) drops to approximately 22 A. The NP40N055KHE-E1-AY must be mounted on ≥10 cm² of 2 oz copper with thermal vias to sustain full 40 A operation.

Does NP40N055KHE-E1-AY include integrated gate protection?

Yes, the NP40N055KHE-E1-AY integrates a gate-to-source protection diode to suppress ESD events, as confirmed in the datasheet's Equivalent Circuit diagram and Features section. This diode is not rated for continuous overvoltage clamping-external Zener or TVS protection remains necessary if V_GS may exceed ±20 V in system transients. The NP40N055KHE-E1-AY's gate oxide is rated for ±20 V maximum, and the internal diode supports only brief ESD pulses.

What is the typical gate charge requirement for NP40N055KHE-E1-AY?

The NP40N055KHE-E1-AY has a total gate charge (Q_G) of 23–35 nC, measured at V_DD = 44 V, V_GS = 10 V, and I_D = 40 A. This value determines gate driver sizing: a 2 A peak driver can fully charge the gate in ~17 ns. Q_GS = 6 nC and Q_GD = 9 nC indicate Miller plateau behavior, critical for predicting switching transition times. For optimal performance, the NP40N055KHE-E1-AY should be driven with a low-impedance gate resistor (e.g., 1–5 Ω) to minimize ringing.

Can NP40N055KHE-E1-AY be used in avalanche-mode operation?

Yes, the NP40N055KHE-E1-AY is characterized for single-pulse avalanche operation with E_AS = 44–49 mJ at V_DD = 28 V, R_G = 25 Ω, and starting T_ch = 25°C. It is not rated for repetitive avalanche. Applications requiring repeated inductive turn-off (e.g., solenoid drivers) must limit pulse repetition rate and verify thermal limits. The NP40N055KHE-E1-AY's avalanche spec confirms ruggedness under fault conditions but does not replace snubbers in high-energy circuits.

What is the thermal resistance from channel to case for NP40N055KHE-E1-AY?

The NP40N055KHE-E1-AY has a channel-to-case thermal resistance (R_th(ch-C)) of 2.27°C/W, measured under JEDEC-standard conditions. This value reflects heat flow from the silicon die to the TO-263 drain tab. To achieve this rating, the tab must be soldered to ≥4 cm² of 2 oz copper with ≥6 thermal vias (0.3 mm diameter). Without proper thermal interface, actual R_th(ch-C) degrades significantly-directly impacting safe operating area and lifetime. The NP40N055KHE-E1-AY's low R_th(ch-C) enables compact heatsink integration in space-limited industrial modules.

NP40N055KHE-E1-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

NP40N055KHE-E1-AY FAQ

1.How can I place an order for NP40N055KHE-E1-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP40N055KHE-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP40N055KHE-E1-AY reliable?

The price and inventory of NP40N055KHE-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP40N055KHE-E1-AY is usually 5 days.

3.What payment methods are accepted for NP40N055KHE-E1-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP40N055KHE-E1-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP40N055KHE-E1-AY?

NP40N055KHE-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP40N055KHE-E1-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP40N055KHE-E1-AY?

For technical support, including NP40N055KHE-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP40N055KHE-E1-AY requirements.

6.How does Aetrix verify that NP40N055KHE-E1-AY is sourced from the original manufacturer or authorized distributors?

All NP40N055KHE-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP40N055KHE-E1-AY meets industry standards.

7.What is the process for return or replacement of NP40N055KHE-E1-AY?

All NP40N055KHE-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP40N055KHE-E1-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP40N055KHE-E1-AY part is unused and in its original packaging.

Return procedure for NP40N055KHE-E1-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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