Renesas NP40N055KHE-E1-AZ

Overview

NP40N055KHE-E1-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching, motor drive half-bridge legs, and industrial power supply synchronous rectification. It delivers R_DS(on) = 23 mΩ max at V_GS = 10 V and I_D = 20 A, supports 55 V drain-source breakdown, and operates with channel temperature up to 175°C in TO-263 (MP-25ZK) surface-mount package.

For engineers reviewing the NP40N055KHE-E1-AZ datasheet, NP40N055KHE-E1-AZ pinout, NP40N055KHE-E1-AZ application, or NP40N055KHE-E1-AZ equivalent, key selection criteria include its 23 mΩ on-resistance, 1070 pF input capacitance, built-in gate protection diode, avalanche energy rating of 44 mJ (I_AS = 21 A), and Pb-free pure Sn lead plating compatible with IR reflow per J-STD-020.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage range (2.0–4.0 V) enables robust TTL/CMOS-level drive compatibility while maintaining noise immunity under high dv/dt conditions typical in buck converters and H-bridge inverters.

The device integrates a monolithic body diode with 1.0 V forward voltage at 40 A and 38 ns reverse recovery time, supporting moderate-frequency synchronous rectification without external Schottky supplementation. Thermal resistance from channel to case is 2.27°C/W, enabling 66 W continuous dissipation at T_C = 25°C when mounted on ≥25 cm² 2-oz copper with thermal vias.

Key Specifications

Pinout & Package

NP40N055KHE-E1-AZ uses the TO-263 (MP-25ZK) thermally enhanced surface-mount package weighing 1.5 g, featuring a large exposed drain pad for low thermal resistance and mechanical stability during reflow.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXTP40N055P and STP40NF05L, NP40N055KHE-E1-AZ offers superior thermal performance via TO-263 package, integrated gate protection, and extended 175°C channel rating-making it preferred for space-constrained, high-reliability power conversion where board-level ESD robustness and thermal headroom are critical.

Availability

NP40N055KHE-E1-AZ is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and EV onboard charger designs requiring stable component supply across multi-year production cycles.

Supply support for NP40N055KHE-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

NP40N055KHE-E1-AZ belongs to Renesas' legacy high-current N-channel MOSFET product line, engineered for ruggedized switching in industrial power supplies and motor control systems demanding low R_DS(on), high avalanche tolerance, and extended temperature operation.

FAQ

What is the maximum continuous drain current rating for NP40N055KHE-E1-AZ at 100°C case temperature?

At T_C = 100°C, NP40N055KHE-E1-AZ supports 32 A continuous drain current. This is derived from its 40 A rating at 25°C case temperature and thermal derating curve in Figure 2 of the datasheet, where total power dissipation drops to ~32 W at 100°C, corresponding to 32 A at 23 mΩ R_DS(on). The device remains within safe operating area up to this point when properly heatsinked.

Does NP40N055KHE-E1-AZ require an external gate resistor for standard 12 V PWM drive?

Yes, NP40N055KHE-E1-AZ requires an external gate resistor-typically 1–5 Ω-to control dV/dt and suppress oscillation during switching. Its 1070 pF C_iss and 95 pF Crss interact with PCB trace inductance; without series resistance, ringing can exceed ±20 V gate rating and cause false turn-on. The resistor value must balance switching speed against EMI and shoot-through risk in bridge configurations.

Is NP40N055KHE-E1-AZ suitable for synchronous rectification in a 300 kHz LLC resonant converter?

Yes, NP40N055KHE-E1-AZ is suitable for synchronous rectification at 300 kHz due to its 38 ns reverse recovery time (t_rr) and 1.0 V body diode forward voltage at 40 A. These parameters ensure low conduction loss and minimal reverse recovery charge (Q_rr = 46 nC), preventing cross-conduction and excessive heating. Layout must minimize source inductance to preserve timing accuracy in gate drive signals for NP40N055KHE-E1-AZ.

What is the gate-to-source leakage current specification for NP40N055KHE-E1-AZ at maximum rated voltage?

NP40N055KHE-E1-AZ specifies ±10 μA maximum gate-to-source leakage current (I_GSS) at V_GS = ±20 V and T_A = 25°C. This low leakage ensures stable gate bias under high-impedance drive conditions and prevents unintended turn-on in high-side configurations where gate voltage floats. At elevated temperatures (125°C), leakage may rise to ~50 μA but remains within design margins for most PWM controllers.

Can NP40N055KHE-E1-AZ be used in avalanche mode for clamping inductive kickback without external components?

NP40N055KHE-E1-AZ is rated for single-pulse avalanche energy up to 44 mJ at I_AS = 21 A, making it suitable for controlled inductive clamping in non-repetitive scenarios like relay driving or solenoid control. However, repetitive avalanche operation is not guaranteed and requires strict pulse width (<10 μs), duty cycle (<1%), and thermal management. For repetitive clamping, an external RCD snubber remains recommended to protect NP40N055KHE-E1-AZ and ensure long-term reliability.