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Renesas NP40N055KLE-E1-AY
- Part No.:
- NP40N055KLE-E1-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
NP40N055KLE-E1-AY.pdf
- Description:
- MOSFET N-CH 55V 40A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:1,600
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Product details
Overview
NP40N055KLE-E1-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor control circuits, featuring RDS(on) = 23 mΩ max at VGS = 10 V / ID = 20 A, 55 V VDSS, and 40 A continuous drain current (TC = 25°C). It operates up to 175°C channel temperature and includes a built-in gate protection diode.
For engineers reviewing the NP40N055KLE-E1-AY datasheet, NP40N055KLE-E1-AY pinout, NP40N055KLE-E1-AY application, or NP40N055KLE-E1-AY equivalent, this page delivers verified electrical specs, TO-263 (MP-25ZK) package details, thermal resistance data, avalanche energy ratings, and real-world switching timing values - all confirmed from Renesas' official D14093EJ7V0DS datasheet.
Technical Context
This MOSFET uses planar vertical DMOS architecture optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage (1.5–2.5 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while its 1300 pF typical input capacitance supports efficient gate drive design at frequencies up to several hundred kHz.
The device integrates a body diode with 1.0 V forward voltage at 40 A and 40 ns reverse recovery time, supporting synchronous rectification and freewheeling in buck, half-bridge, and H-bridge configurations. Its single-pulse avalanche rating of 64 mJ at Tch = 25°C provides robustness against inductive turn-off transients in motor drives and solenoid controls.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Maximum blocking voltage before avalanche; suitable for 24 V and 48 V bus systems with margin. |
| RDS(on)1 | 23 mΩ max @ VGS = 10 V, ID = 20 A - Enables <1 W conduction loss at 20 A, reducing heatsink requirements. |
| ID(DC) | ±40 A @ TC = 25°C - Supports high-current loads such as BLDC motor phases and DC-DC primary switches. |
| EAS | 64 mJ @ Tch = 25°C - Withstands single inductive energy spikes up to 28 V × 29 A × 1 μs without failure. |
| Rth(ch-C) | 2.27 °C/W - Enables direct mounting to heatsinks; 40 A operation yields ~91°C rise above case at steady state. |
| QG | 41 nC max @ VDD = 44 V, ID = 40 A - Determines gate driver current requirement (~2 A peak for 20 ns rise time). |
| tr/tf | 8.4–21 ns / 7.4–19 ns - Supports >500 kHz switching in resonant or ZVS designs with minimal overlap loss. |
Pinout & Package
NP40N055KLE-E1-AY is housed in a surface-mount TO-263 (MP-25ZK) package weighing ~1.5 g, with exposed drain tab for thermal and electrical connection. The package features 4 terminals: Gate, Drain, Source, and Fin (Drain), where the Fin serves as an extended drain pad for enhanced thermal transfer and current handling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives gate drive signal; requires external series resistor (RG) to damp ringing and limit peak current. |
| 2 (Drain) | Main current path (high-side) | Connected to high-voltage rail; electrically and thermally tied to large copper area on PCB. |
| 3 (Source) | Reference node for gate drive | Serves as return path for load current and reference for gate-to-source voltage; must be low-inductance. |
| 4 (Fin) | Drain extension terminal | Provides additional solderable surface for drain connection; improves thermal dissipation and current sharing. |
Key Features
| Feature | Design Value |
|---|---|
| 175°C rated channel temperature | Enables operation in sealed enclosures or high-ambient environments without derating below 125°C ambient. |
| Super low RDS(on) at 4.5 V gate drive | 32 mΩ max allows use with 5 V microcontrollers or logic-level drivers without level-shifting circuitry. |
| Built-in gate protection diode | ESD protection up to ±2 kV HBM reduces need for external TVS on gate line in board-level ESD testing. |
| Low Ciss (1300 pF typ.) | Minimizes Miller effect and gate drive power loss, enabling efficient operation with low-power gate drivers. |
| Body diode with 40 ns trr | Supports bidirectional current flow in half-bridge freewheeling paths with low reverse recovery loss. |
Applications
| Industrial DC Motor Drive | High-Efficiency DC-DC Converter |
|---|---|
|
Use Scenario: Driving 24 V brushed DC motors in automated conveyor systems with PWM frequency up to 20 kHz. IC Role / Device Role / Timing Role: High-side N-channel switch in H-bridge configuration, handling bidirectional current and regenerative braking via body diode conduction. Use Value: 23 mΩ RDS(on) limits I²R loss to <10 W at 20 A, reducing thermal stress and enabling compact heatsink design. |
Use Scenario: Primary-side synchronous rectifier in isolated 48 V to 12 V flyback converter for telecom power modules. IC Role / Device Role / Timing Role: Low-side switch controlling transformer primary winding; synchronized with secondary-side controller for zero-voltage switching. Use Value: 41 nC total gate charge enables fast turn-on/turn-off (<32 ns td(on), <78 ns td(off)), minimizing dead-time losses. |
| Uninterruptible Power Supply (UPS) | Automated Test Equipment (ATE) Load Switch |
|
Use Scenario: Battery isolation and inverter output stage in 1 kVA online UPS with 50/60 Hz fundamental and harmonic-rich waveform. IC Role / Device Role / Timing Role: Output bridge switch handling 40 A continuous and 100 A pulsed current during surge events. Use Value: 64 mJ single-pulse avalanche energy ensures reliability during short-circuit or overload fault conditions without destructive failure. |
Use Scenario: Programmable electronic load in precision ATE systems requiring rapid on/off cycling and accurate current sourcing. IC Role / Device Role / Timing Role: Precision current-switching element controlled by DAC-driven gate voltage for sub-amp resolution. Use Value: 2.5 V VGS(th) max enables stable turn-on with 3.3 V logic; 1.0 V body diode VF ensures low forward drop during reverse current test modes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP40NF55 | Same VDSS (55 V), higher RDS(on) (30 mΩ @ 10 V), TO-220 package, no integrated gate protection diode. | Requires external gate ESD protection; less suitable for space-constrained SMT layouts due to through-hole packaging. | Preferred where cost sensitivity outweighs thermal performance and board area constraints. |
| IRFZ44NPBF | Lower VDSS (55 V same), higher RDS(on) (28 mΩ @ 10 V), TO-220, no avalanche rating specified in datasheet. | Lacks documented single-pulse avalanche capability; not recommended for inductive switching without snubbers. | Acceptable only in non-inductive or low-energy switching applications with conservative voltage derating. |
Compared with STP40NF55 and IRFZ44NPBF, NP40N055KLE-E1-AY offers superior thermal resistance (2.27 °C/W vs. ~3.5 °C/W), guaranteed avalanche ruggedness, and integrated gate protection - making it the preferred choice for high-reliability industrial switching where layout density and transient robustness are critical.
Availability
NP40N055KLE-E1-AY is available at Aetrix Electronics and suitable for industrial motor drives, high-efficiency DC-DC converters, and uninterruptible power supply (UPS) systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant lead-free plating.
Supply support for NP40N055KLE-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
NP40N055KLE-E1-AY belongs to Renesas' legacy power MOSFET product line targeting high-current, high-ruggedness switching applications in standard-grade industrial equipment - emphasizing low RDS(on), thermal efficiency, and avalanche reliability over automotive qualification.
FAQ
What is the maximum continuous drain current rating for NP40N055KLE-E1-AY?
The NP40N055KLE-E1-AY has a maximum continuous drain current (ID(DC)) of ±40 A when case temperature (TC) is maintained at 25°C. At higher case temperatures, current must be derated per Figure 2 in the datasheet - e.g., ~25 A at TC = 100°C. This rating assumes proper PCB copper area and heatsinking to achieve the specified Rth(ch-C) = 2.27 °C/W.
Does NP40N055KLE-E1-AY support logic-level gate drive?
Yes, NP40N055KLE-E1-AY supports logic-level gate drive: its gate threshold voltage (VGS(th)) ranges from 1.5 V to 2.5 V, and it achieves RDS(on) ≤ 32 mΩ at VGS = 4.5 V. This allows direct interfacing with 3.3 V or 5 V microcontrollers without gate driver ICs, though a series gate resistor is still required for ringing suppression.
What is the avalanche energy rating of NP40N055KLE-E1-AY and under what conditions is it valid?
NP40N055KLE-E1-AY is rated for single-pulse avalanche energy (EAS) of 64 mJ at starting channel temperature (Tch) = 25°C, with test conditions VDD = 28 V, IAS = 29 A, RG = 25 Ω, and VGS switched from 20 V to 0 V. This rating applies only to single, non-repetitive events and does not imply repetitive avalanche capability.
Is NP40N055KLE-E1-AY RoHS compliant and what is its lead plating?
Yes, NP40N055KLE-E1-AY is RoHS compliant and features pure tin (Sn) lead plating, as stated in the Ordering Information table. The "Note 1" in the datasheet confirms "Pb-free (This product does not contain Pb in the external electrode)", and the marking "LE" on the device denotes lead-free plating per JEDEC standards.
Can NP40N055KLE-E1-AY be used in parallel configurations?
Yes, NP40N055KLE-E1-AY can be paralleled for higher current handling, but requires careful attention to gate drive symmetry, source inductance matching, and thermal coupling. Its positive RDS(on) temperature coefficient (see Figure 12) promotes current sharing, but individual gate resistors and Kelvin source connections are recommended to ensure balanced dynamic current distribution.
NP40N055KLE-E1-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 23mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 41 nC @ 5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 1950 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta), 66W (Tc)
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263
NP40N055KLE-E1-AY FAQ
1.How can I place an order for NP40N055KLE-E1-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for NP40N055KLE-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NP40N055KLE-E1-AY reliable?
The price and inventory of NP40N055KLE-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP40N055KLE-E1-AY is usually 5 days.
3.What payment methods are accepted for NP40N055KLE-E1-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP40N055KLE-E1-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NP40N055KLE-E1-AY?
NP40N055KLE-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NP40N055KLE-E1-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NP40N055KLE-E1-AY?
For technical support, including NP40N055KLE-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP40N055KLE-E1-AY requirements.
6.How does Aetrix verify that NP40N055KLE-E1-AY is sourced from the original manufacturer or authorized distributors?
All NP40N055KLE-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP40N055KLE-E1-AY meets industry standards.
7.What is the process for return or replacement of NP40N055KLE-E1-AY?
All NP40N055KLE-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP40N055KLE-E1-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NP40N055KLE-E1-AY part is unused and in its original packaging.
Return procedure for NP40N055KLE-E1-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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