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Renesas NP40N10PDF-E1-AY

Part No.:
NP40N10PDF-E1-AY
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixNP40N10PDF-E1-AY.pdf
Description:
MOSFET N-CH 100V 40A TO263
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,614

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Product details

Overview

NP40N10PDF-E1-AY from Renesas Electronics is a 100 V, 40 A N-channel power MOSFET in TO-263 (MP-25ZP) package, AEC-Q101 qualified for automotive applications. It delivers RDS(on) = 27 mΩ max at VGS = 10 V / ID = 20 A, features logic-level gate drive, and supports high-current switching in engine control units and DC-DC converters.

For engineers reviewing the NP40N10PDF-E1-AY datasheet, NP40N10PDF-E1-AY pinout, NP40N10PDF-E1-AY application, or NP40N10PDF-E1-AY equivalent, this page provides verified electrical parameters, thermal resistance (Rth(ch-A) = 83.3 °C/W), avalanche capability (EAS = 61 mJ), and real-world automotive use context - all confirmed from Renesas' R07DS0361EJ0201 Rev.2.01 preliminary datasheet.

Technical Context

This MOSFET uses planar silicon technology with integrated body diode and is optimized for unidirectional high-current switching in 12 V/24 V automotive systems. Its gate threshold voltage (VGS(th) = 1.5–2.5 V) enables direct microcontroller-level drive, and low Ciss (2100 pF typ.) supports fast switching with reduced gate drive loss.

The device exhibits robust avalanche ruggedness (IAS = 25 A, EAS = 61 mJ) and thermal stability up to Tch = 175 °C. Its Rth(ch-C) = 1.25 °C/W and Rth(ch-A) = 83.3 °C/W (on 40 mm × 40 mm × 1.6 mm glass epoxy PCB with 4% copper) define its thermal envelope under continuous and pulsed operation.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 100 V - Maximum blocking voltage compatible with 24 V automotive battery systems with load dump margin.
RDS(on) max 27 mΩ @ VGS = 10 V, ID = 20 A - Enables <1.1 W conduction loss at 20 A, reducing heatsink requirements.
ID(DC) ±40 A @ TC = 25°C - Supports high-current motor drivers and solenoid controls without derating at case temperature.
EAS 61 mJ - Withstands single-pulse inductive energy spikes in relay/coil driving and H-bridge freewheeling.
Rth(ch-A) 83.3 °C/W - Measured on standard 40 mm × 40 mm PCB; defines maximum ambient temperature rise per watt dissipated.
QG 47–71 nC - Gate charge magnitude determines required driver current and switching speed trade-off in PWM circuits.
VGS(th) 1.5–2.5 V - Ensures reliable turn-on with 3.3 V or 5 V logic controllers without level-shifting circuitry.

Pinout & Package

NP40N10PDF-E1-AY is housed in TO-263 (MP-25ZP) surface-mount package with exposed drain pad for thermal and electrical performance. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Fin (Drain). The drain terminals (Pins 2 and 4) are internally connected and thermally coupled to the large metal tab.

Pin/Terminal Circuit Role Design Meaning
1 Gate Control terminal; accepts logic-level input (3.3 V/5 V); requires ESD protection due to oxide sensitivity.
2 Drain Main high-side switching node; electrically and thermally tied to metal tab; connects to load/high-voltage rail.
3 Source Power return path; referenced to system ground in low-side configurations; used for current sensing.
4 Fin (Drain) Secondary drain connection enhancing thermal conduction and current capacity; must be soldered to PCB copper pour.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive-grade reliability including temperature cycling, humidity bias, and mechanical shock testing.
Logic-level gate drive VGS(th) ≤ 2.5 V ensures full enhancement with standard MCU GPIOs, eliminating need for gate driver ICs in many designs.
Low RDS(on) × QG figure of merit 27 mΩ × 71 nC = 1917 mΩ·nC - Balances conduction and switching losses for high-efficiency 100 kHz–500 kHz SMPS.
Integrated body diode VF(S-D) = 0.9–1.5 V @ IF = 40 A - Supports synchronous rectification and freewheeling in half-bridge topologies.
High avalanche energy rating EAS = 61 mJ - Allows safe operation during inductive turn-off transients without external snubbers in motor control.

Applications

Engine Control Unit (ECU) Injector Driver Automotive DC-DC Converter Primary Switch

Use Scenario: High-speed, high-current switching of fuel injectors in gasoline/diesel ECUs under harsh under-hood conditions (−40°C to +150°C).

IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current; operates in pulse-width modulated bursts with <100 ns turn-off delay.

Use Value: 27 mΩ RDS(on) minimizes I²R heating during extended duty cycles; AEC-Q101 qualification ensures 15+ year field reliability.

Use Scenario: Primary-side switching element in 12 V → 48 V bidirectional DC-DC converters for mild hybrid vehicles.

IC Role / Device Role / Timing Role: Synchronous rectifier and main power switch; handles 40 A continuous current with <120 ns td(off).

Use Value: Low Ciss (2100 pF) and QG (47–71 nC) enable efficient 200 kHz switching; TO-263 thermal pad sustains >100 W pulsed power.

Electric Power Steering (EPS) Motor Phase Leg Automotive HVAC Blower Motor Controller

Use Scenario: Half-bridge phase-leg switch in 3-phase EPS motor drives, subject to high dv/dt and reverse recovery stress.

IC Role / Device Role / Timing Role: High-side or low-side MOSFET in inverter leg; conducts 30 A peak with body-diode commutation.

Use Value: 61 mJ EAS withstands inductive kickback during fault conditions; 175 °C channel rating supports compact heatsink design.

Use Scenario: PWM-controlled blower motor driver in climate control systems, requiring silent, stepless speed regulation.

IC Role / Device Role / Timing Role: Low-side power switch modulating motor voltage; operates with <13 ns fall time for smooth torque delivery.

Use Value: Logic-level gate enables direct MCU PWM control; Rth(ch-A) = 83.3 °C/W allows natural convection cooling on standard PCB layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N10F7 RDS(on) = 2.2 mΩ @ 10 V (lower), but rated only for 100 V / 220 A; TO-263-7L package with different pinout (G-D-S-D-D-D-D). Higher current handling and lower RDS(on), but lacks AEC-Q101 certification and has higher gate charge (120 nC). Select when higher efficiency at >50 A is critical and automotive qualification is not required.
IXTP40N10P TO-220 package; RDS(on) = 30 mΩ @ 10 V; not AEC-Q101 qualified; Rth(ch-A) = 62 °C/W (higher thermal resistance). Lower cost and widely available, but unsuitable for automotive due to lack of qualification and inferior thermal performance on PCB. Select for industrial non-automotive applications where TO-220 mounting and lower qualification rigor are acceptable.

Compared with STL220N10F7 and IXTP40N10P, NP40N10PDF-E1-AY uniquely balances AEC-Q101 compliance, TO-263 thermal performance (Rth(ch-A) = 83.3 °C/W), and logic-level drive - making it the only drop-in option for space-constrained, safety-critical automotive modules requiring validated reliability.

Availability

NP40N10PDF-E1-AY is available at Aetrix Electronics and suitable for automotive powertrain control, DC-DC conversion, and electric power steering systems requiring stable component supply across long production lifecycles.

Supply support for NP40N10PDF-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices for automotive, industrial, and infrastructure markets.

NP40N10PDF-E1-AY belongs to Renesas' "Power MOSFET for Automotive" product line, engineered specifically for high-reliability, high-current switching in engine management, ADAS, and electrified vehicle subsystems.

FAQ

What is the maximum continuous drain current rating for NP40N10PDF-E1-AY?

The NP40N10PDF-E1-AY is rated for ±40 A DC drain current at case temperature TC = 25°C. This rating assumes proper PCB copper area (40 mm × 40 mm × 1.6 mm with 4% copper) and thermal management. At higher case temperatures, current must be derated per the Safe Operating Area (SOA) curve on page 4 of the R07DS0361EJ0201 datasheet.

Is NP40N10PDF-E1-AY suitable for 12 V automotive battery systems?

Yes, NP40N10PDF-E1-AY is explicitly designed for automotive applications and AEC-Q101 qualified. Its 100 V VDSS rating provides sufficient margin for 12 V system load dump transients (up to ~87 V per ISO 7637-2), and its logic-level gate (VGS(th) = 1.5–2.5 V) interfaces directly with 3.3 V or 5 V microcontrollers used in modern ECUs.

Does NP40N10PDF-E1-AY have avalanche capability, and what are the limits?

Yes, NP40N10PDF-E1-AY is specified for single-pulse avalanche with IAS = 25 A and EAS = 61 mJ (Tch(start) = 25°C, VDD = 50 V, RG = 25 Ω, L = 100 μH). This capability is validated per JEDEC JESD24-1 and supports robust operation during inductive turn-off events in motor and solenoid drivers without external snubbers.

What is the thermal resistance from channel to ambient for NP40N10PDF-E1-AY?

The channel-to-ambient thermal resistance Rth(ch-A) for NP40N10PDF-E1-AY is 83.3 °C/W, measured on a standard 40 mm × 40 mm × 1.6 mm glass epoxy PCB with 4% copper area (35 μm). This value defines the temperature rise above ambient per watt of power dissipated and is critical for thermal design of automotive PCB layouts.

Can NP40N10PDF-E1-AY be used in synchronous rectification topologies?

Yes, NP40N10PDF-E1-AY supports synchronous rectification via its integrated body diode (VF(S-D) = 0.9–1.5 V @ IF = 40 A) and fast reverse recovery (trr = 67 ns, Qrr = 162 nC). Its low RDS(on) and logic-level gate allow it to replace Schottky diodes in secondary-side switching of isolated DC-DC converters, improving efficiency by >3% at 20 A loads.

NP40N10PDF-E1-AY Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
27mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
71 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3150 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.8W (Ta), 120W (Tc)
Operating Temperature:
175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)

NP40N10PDF-E1-AY FAQ

1.How can I place an order for NP40N10PDF-E1-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP40N10PDF-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP40N10PDF-E1-AY reliable?

The price and inventory of NP40N10PDF-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP40N10PDF-E1-AY is usually 5 days.

3.What payment methods are accepted for NP40N10PDF-E1-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP40N10PDF-E1-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP40N10PDF-E1-AY?

NP40N10PDF-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP40N10PDF-E1-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP40N10PDF-E1-AY?

For technical support, including NP40N10PDF-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP40N10PDF-E1-AY requirements.

6.How does Aetrix verify that NP40N10PDF-E1-AY is sourced from the original manufacturer or authorized distributors?

All NP40N10PDF-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP40N10PDF-E1-AY meets industry standards.

7.What is the process for return or replacement of NP40N10PDF-E1-AY?

All NP40N10PDF-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP40N10PDF-E1-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP40N10PDF-E1-AY part is unused and in its original packaging.

Return procedure for NP40N10PDF-E1-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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