Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP40N10VDF-E2-AY

Name: NP40N10VDF-E2-AY
Brand: Renesas
SKU: NP40N10VDF-E2-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: NP40N10VDF-E2-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: NP40N10VDF-E2-AY.pdf

Description:: TRANSISTOR

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,045

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

NP40N10VDF-E2-AY from Renesas Electronics is a 100 V, 40 A N-channel power MOSFET in TO-252 (MP-3ZP) package, optimized for automotive high-current switching with R_DS(on) = 26 mΩ max at V_GS = 10 V and I_D = 20 A. It features logic-level gate drive, AEC-Q101 qualification, and integrated body diode for motor control and DC-DC converter primary-side switching.

For engineers reviewing the NP40N10VDF-E2-AY datasheet, NP40N10VDF-E2-AY pinout, NP40N10VDF-E2-AY application, or NP40N10VDF-E2-AY equivalent, this page delivers verified thermal resistance (R_th(ch-A) = 125 °C/W), avalanche capability (E_AS = 61 mJ), and gate charge (Q_G = 47–71 nC) to support robust automotive power stage design.

Technical Context

This MOSFET employs planar trench-gate silicon technology with optimized cell pitch and drift region doping to achieve low R_DS(on) while maintaining 100 V V_DSS breakdown. Its gate threshold voltage (V_GS(th) = 1.5–2.5 V) enables direct interface with 3.3 V/5 V microcontrollers without level-shifting.

The device integrates a fast-recovery body diode (t_rr = 67 ns, Q_rr = 162 nC) and exhibits low output capacitance (C_oss = 200–300 pF) for reduced switching losses in hard-switched topologies. Thermal design is supported by R_th(ch-C) = 1.25 °C/W and channel temperature rating up to 175 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands 100 V drain-source blocking voltage, suitable for 48 V automotive systems with margin.
I_D(DC)	±40 A - Supports continuous 40 A conduction at T_C = 25°C, enabling high-power load switching.
R_DS(on) max	26 mΩ @ V_GS = 10 V, I_D = 20 A - Low conduction loss yields <1 W dissipation at 20 A, reducing heatsink requirements.
Q_G	47–71 nC - Gate drive energy requirement determines driver sizing and switching speed in PWM applications.
E_AS	61 mJ - Single-pulse avalanche energy rating ensures ruggedness against inductive turn-off transients in motor drives.
R_th(ch-A)	125 °C/W - Thermal resistance to ambient on standard 40 mm × 40 mm PCB with 4% copper area guides board layout cooling.
t_rr	67 ns - Fast body diode recovery minimizes shoot-through risk and commutation losses in synchronous rectification.

Pinout & Package

NP40N10VDF-E2-AY uses the TO-252 (MP-3ZP) surface-mount package with exposed drain pad for thermal and electrical performance. The package has four terminals: Gate, Drain, Source, and Fin (Drain).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Accepts logic-level gate drive (3.3 V/5 V compatible); requires ESD protection due to oxide sensitivity.
2 (Drain)	Main power output	Connected to high-side or low-side switch node; electrically tied to exposed drain pad for thermal conduction.
3 (Source)	Power return reference	Serves as common return path for load current and gate drive reference; low-inductance layout critical for stability.
4 (Fin / Drain)	Thermal & electrical drain extension	Exposed metal pad soldered to PCB copper pour to enhance heat dissipation and reduce R_th(ch-A).

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood environments including temperature cycling, humidity, and mechanical shock per JESD22 standards.
Logic-level gate drive	V_GS(th) range of 1.5–2.5 V enables direct drive from MCU GPIOs without external level shifters or gate drivers.
Low C_iss	2100 pF typical - Reduces gate drive power and improves high-frequency switching efficiency in SMPS designs.
Fast body diode	t_rr = 67 ns and Q_rr = 162 nC - Enables reliable operation in freewheeling paths and synchronous rectification circuits.
Rugged avalanche rating	E_AS = 61 mJ - Allows safe operation during inductive load switching without external snubbers in many automotive applications.

Applications

Automotive Motor Control	48 V DC-DC Converters
Use Scenario: High-side switch in brushed DC motor driver for HVAC blower or power seat actuation in passenger vehicles. IC Role / Device Role / Timing Role: Power switch controlling motor direction and speed via PWM; operates in hard-switched mode at 10–20 kHz. Use Value: 26 mΩ R_DS(on) limits conduction loss to ≤1.04 W at 20 A, enabling compact thermally constrained modules without forced air cooling.	Use Scenario: Primary-side switch in non-isolated buck converter stepping down 48 V battery rail to 12 V for infotainment and ADAS subsystems. IC Role / Device Role / Timing Role: Main power transistor in synchronous rectified topology; switches at 200–500 kHz with controlled dV/dt. Use Value: Low Q_G (47–71 nC) and C_oss (200–300 pF) minimize switching loss and gate drive power, improving efficiency above 95% at full load.
Engine Control Unit (ECU) Load Drivers	Electric Power Steering (EPS) Pre-driver Stage
Use Scenario: Low-side driver for solenoid valves and fuel injectors requiring precise current regulation and fast turn-off. IC Role / Device Role / Timing Role: Current-controlled switch with active short-circuit protection; supports pulse-width modulated current shaping. Use Value: 100 V V_DSS and 80 A pulsed rating handle inductive kickback from 12 V/24 V solenoids without clamping diodes.	Use Scenario: Secondary-stage switch in EPS H-bridge driving 3-phase BLDC motor windings via gate driver ICs. IC Role / Device Role / Timing Role: High-current half-bridge leg component; conducts up to 40 A continuously with tight thermal management. Use Value: R_th(ch-C) = 1.25 °C/W and 175 °C T_ch rating allow sustained operation under peak torque conditions without derating.

Automotive Motor Control

48 V DC-DC Converters

Use Scenario: High-side switch in brushed DC motor driver for HVAC blower or power seat actuation in passenger vehicles.

IC Role / Device Role / Timing Role: Power switch controlling motor direction and speed via PWM; operates in hard-switched mode at 10–20 kHz.

Use Value: 26 mΩ R_DS(on) limits conduction loss to ≤1.04 W at 20 A, enabling compact thermally constrained modules without forced air cooling.

Use Scenario: Primary-side switch in non-isolated buck converter stepping down 48 V battery rail to 12 V for infotainment and ADAS subsystems.

IC Role / Device Role / Timing Role: Main power transistor in synchronous rectified topology; switches at 200–500 kHz with controlled dV/dt.

Use Value: Low Q_G (47–71 nC) and C_oss (200–300 pF) minimize switching loss and gate drive power, improving efficiency above 95% at full load.

Engine Control Unit (ECU) Load Drivers

Electric Power Steering (EPS) Pre-driver Stage

Use Scenario: Low-side driver for solenoid valves and fuel injectors requiring precise current regulation and fast turn-off.

IC Role / Device Role / Timing Role: Current-controlled switch with active short-circuit protection; supports pulse-width modulated current shaping.

Use Value: 100 V V_DSS and 80 A pulsed rating handle inductive kickback from 12 V/24 V solenoids without clamping diodes.

Use Scenario: Secondary-stage switch in EPS H-bridge driving 3-phase BLDC motor windings via gate driver ICs.

IC Role / Device Role / Timing Role: High-current half-bridge leg component; conducts up to 40 A continuously with tight thermal management.

Use Value: R_th(ch-C) = 1.25 °C/W and 175 °C T_ch rating allow sustained operation under peak torque conditions without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL100N10F7	R_DS(on) = 9.5 mΩ @ 10 V, but rated only for 100 V/80 A and not AEC-Q101 qualified.	Higher current capability but lacks automotive qualification; unsuitable for safety-critical ECU functions.	Select when higher efficiency is prioritized over automotive compliance and qualification traceability.
IXTP40N10L2	R_DS(on) = 28 mΩ @ 10 V, TO-220 package, R_th(ch-A) = 62 °C/W (with heatsink), no AEC-Q101 certification.	Through-hole mounting and higher thermal resistance limit use in space-constrained automotive modules.	Prefer for industrial prototypes or non-automotive 48 V systems where board-level reliability validation is internal.

Compared with STL100N10F7 and IXTP40N10L2, NP40N10VDF-E2-AY uniquely combines AEC-Q101 qualification, TO-252 surface-mount form factor, and 26 mΩ R_DS(on) - making it the only option among the three validated for production automotive electronics requiring zero-defect reliability and automated assembly.

Availability

NP40N10VDF-E2-AY is available at Aetrix Electronics and suitable for automotive motor control, 48 V DC-DC conversion, and engine control unit (ECU) load switching requiring stable component supply across multi-year vehicle production cycles.

Supply support for NP40N10VDF-E2-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT markets.

NP40N10VDF-E2-AY belongs to Renesas' automotive-qualified power MOSFET family designed specifically for high-reliability 12 V/48 V vehicle subsystems including body electronics, chassis control, and electrified powertrain interfaces.

FAQ

What is the maximum continuous drain current rating for NP40N10VDF-E2-AY?

The NP40N10VDF-E2-AY is rated for ±40 A DC drain current at case temperature T_C = 25°C. Derating applies above 25°C per the total power dissipation vs. case temperature curve, with R_th(ch-C) = 1.25 °C/W defining thermal limits under heatsinked conditions.

Is NP40N10VDF-E2-AY qualified for automotive applications?

Yes, NP40N10VDF-E2-AY is AEC-Q101 qualified and explicitly designed for automotive use. The datasheet confirms qualification per JESD22 standards, and its TO-252 package meets automotive thermal and mechanical stress requirements for underhood deployment.

What is the gate threshold voltage range of NP40N10VDF-E2-AY?

The gate-to-source threshold voltage V_GS(th) of NP40N10VDF-E2-AY is specified from 1.5 V to 2.5 V at V_DS = V_GS and I_D = 250 μA. This logic-level range ensures reliable turn-on with standard 3.3 V or 5 V microcontroller outputs without gate boosting.

Does NP40N10VDF-E2-AY include an integrated body diode?

Yes, NP40N10VDF-E2-AY incorporates a monolithic body diode with forward voltage V_F(S-D) = 0.9–1.5 V at I_F = 40 A and reverse recovery time t_rr = 67 ns. This enables freewheeling operation in inductive loads and supports synchronous rectification topologies.

What is the total gate charge specification for NP40N10VDF-E2-AY?

The total gate charge Q_G of NP40N10VDF-E2-AY is 47–71 nC under test conditions of V_DD = 80 V, V_GS = 10 V, and I_D = 40 A. This value directly impacts required gate driver peak current and switching transition times in high-frequency applications.

NP40N10VDF-E2-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

NP40N10VDF-E2-AY FAQ

1.How can I place an order for NP40N10VDF-E2-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP40N10VDF-E2-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP40N10VDF-E2-AY reliable?

The price and inventory of NP40N10VDF-E2-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP40N10VDF-E2-AY is usually 5 days.

3.What payment methods are accepted for NP40N10VDF-E2-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP40N10VDF-E2-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP40N10VDF-E2-AY?

NP40N10VDF-E2-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP40N10VDF-E2-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP40N10VDF-E2-AY?

For technical support, including NP40N10VDF-E2-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP40N10VDF-E2-AY requirements.

6.How does Aetrix verify that NP40N10VDF-E2-AY is sourced from the original manufacturer or authorized distributors?

All NP40N10VDF-E2-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP40N10VDF-E2-AY meets industry standards.

7.What is the process for return or replacement of NP40N10VDF-E2-AY?

All NP40N10VDF-E2-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP40N10VDF-E2-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP40N10VDF-E2-AY part is unused and in its original packaging.

Return procedure for NP40N10VDF-E2-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…