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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP45N06VUK-E1-AY

Name: NP45N06VUK-E1-AY
Brand: Renesas
SKU: NP45N06VUK-E1-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP45N06VUK-E1-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: NP45N06VUK-E1-AY.pdf

Description:: MOSFET N-CH 60V 45A TO263-3

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Inventory:12,150

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Product details

Overview

NP45N06VUK-E1-AY from Renesas Electronics is an AEC-Q101-qualified N-channel power MOSFET designed for high-current automotive switching applications, featuring 60 V V_DSS, 45 A I_D(DC), and ultra-low R_DS(on) of 9.6 mΩ max at V_GS = 10 V and I_D = 23 A. It operates in TO-252 (MP-3ZP) package with integrated body diode and robust avalanche capability (E_AR = 36 mJ).

For engineers reviewing the NP45N06VUK-E1-AY datasheet, NP45N06VUK-E1-AY pinout, NP45N06VUK-E1-AY application, or NP45N06VUK-E1-AY equivalent, this device is selected for automotive DC-DC converters, motor drivers, and battery disconnect circuits where low conduction loss, fast switching, thermal reliability, and AEC-Q101 compliance are mandatory.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(on) and reduced gate charge (Q_G = 45 nC max), enabling efficient high-frequency switching in 12 V/24 V automotive systems. Its 2.00 °C/W channel-to-case thermal resistance supports high-power operation when mounted on thermally enhanced PCBs or heatsinks.

The device integrates a fast-recovery body diode (t_rr = 32 ns, Q_rr = 35 nC) and exhibits stable threshold voltage (V_GS(th) = 2.0–4.0 V) across –55°C to +175°C, ensuring reliable gate control under wide ambient and junction temperature conditions in engine bay or powertrain modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Withstands up to 60 V drain-source blocking voltage, suitable for 48 V automotive architectures and transient clamping in 12/24 V systems.
I_D(DC)	±45 A - Supports continuous load currents up to 45 A at T_C = 25°C, enabling high-power solenoid, pump, or fan drive without external paralleling.
R_DS(on) max	9.6 mΩ @ V_GS = 10 V, I_D = 23 A - Delivers <0.5 W conduction loss at 23 A, minimizing heat generation in space-constrained modules.
Q_G max	45 nC - Enables fast turn-on/turn-off with low gate drive power, reducing switching losses in PWM frequencies up to 200 kHz.
t_r/t_f	5–20 ns / 3–10 ns - Supports rapid edge transitions for precise timing control in synchronous rectification and H-bridge topologies.
E_AR	36 mJ - Sustains repetitive avalanche energy events without degradation, critical for inductive load switching in transmission control units.
T_ch max	175°C - Rated for full functionality in under-hood environments with peak junction temperatures up to 175°C.

Pinout & Package

NP45N06VUK-E1-AY uses the TO-252 (MP-3ZP) surface-mount package with exposed drain pad for thermal and electrical performance. The three-terminal configuration places Gate (Pin 1), Drain (Pin 2 and Pin 4 - connected internally to fin), and Source (Pin 3) in standard orientation per JEDEC MS-012.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Controls channel conduction; requires ≥2.0 V V_GS(th) for turn-on and must be driven with low-impedance source to minimize switching time.
2 & 4	Drain (Fin)	High-current drain connection via exposed metal tab; electrically and thermally tied to case for direct PCB copper pour mounting.
3	Source	Reference node for gate drive and current return path; connects to power ground plane to minimize common-source inductance.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use including temperature cycling, humidity bias, and ESD testing per JESD22 standards.
Low R_DS(on) × Q_G figure-of-merit	~432 mΩ·nC - Balances conduction and switching losses for optimal efficiency in 10–100 kHz switching applications.
Fast body diode recovery	t_rr = 32 ns, Q_rr = 35 nC - Reduces reverse recovery losses and EMI in freewheeling paths of buck converters and motor drives.
Robust avalanche rating	I_AR = 19 A, E_AR = 36 mJ - Absorbs inductive energy during fault conditions without failure, supporting fail-safe system design.
Thermally enhanced TO-252	R_th(ch–A) = 125 °C/W - Achieves 1.2 W power dissipation at T_A = 25°C; improves to ~75 W with proper heatsinking via drain pad.

Applications

Automotive Body Control Module (BCM)	48 V Mild Hybrid DC-DC Converter
Use Scenario: High-side switching of lighting loads (headlamps, fog lamps) and HVAC actuators in centralized vehicle body controllers. IC Role / Device Role / Timing Role: Power switch controlling 12 V/24 V loads with PWM dimming and short-circuit protection. Use Value: Low R_DS(on) minimizes voltage drop and self-heating during sustained 30–40 A lamp loads; AEC-Q101 ensures long-term reliability in vibration-prone cabin environments.	Use Scenario: Synchronous rectification in bidirectional buck-boost stages converting between 12 V starter battery and 48 V Li-ion storage. IC Role / Device Role / Timing Role: Low-side switch in high-frequency (100–200 kHz) synchronous rectifier with tight dead-time control. Use Value: Fast t_r/t_f and low Q_G reduce switching losses; integrated body diode enables controlled freewheeling during dead time without external Schottky.
Electric Power Steering (EPS) Motor Driver	Automotive Battery Disconnect Unit (BDU)
Use Scenario: Half-bridge leg in three-phase inverter driving brushless DC assist motor in column- or rack-mounted EPS systems. IC Role / Device Role / Timing Role: High-current phase switch operating at 10–50 kHz with precise gate timing and overcurrent detection. Use Value: 175°C T_ch rating and low R_DS(on) sustain continuous 45 A phase current under hood temperatures up to 125°C ambient.	Use Scenario: Main contactor replacement in high-voltage isolation circuits managing 12 V battery connection to vehicle chassis ground during sleep/wake transitions. IC Role / Device Role / Timing Role: Solid-state disconnect switch activated by microcontroller GPIO with soft-start and fault reporting. Use Value: Avalanche energy rating handles inrush and load dump transients; TO-252 drain pad allows direct thermal coupling to aluminum chassis for passive cooling.

Automotive Body Control Module (BCM)

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-side switching of lighting loads (headlamps, fog lamps) and HVAC actuators in centralized vehicle body controllers.

IC Role / Device Role / Timing Role: Power switch controlling 12 V/24 V loads with PWM dimming and short-circuit protection.

Use Value: Low R_DS(on) minimizes voltage drop and self-heating during sustained 30–40 A lamp loads; AEC-Q101 ensures long-term reliability in vibration-prone cabin environments.

Use Scenario: Synchronous rectification in bidirectional buck-boost stages converting between 12 V starter battery and 48 V Li-ion storage.

IC Role / Device Role / Timing Role: Low-side switch in high-frequency (100–200 kHz) synchronous rectifier with tight dead-time control.

Use Value: Fast t_r/t_f and low Q_G reduce switching losses; integrated body diode enables controlled freewheeling during dead time without external Schottky.

Electric Power Steering (EPS) Motor Driver

Automotive Battery Disconnect Unit (BDU)

Use Scenario: Half-bridge leg in three-phase inverter driving brushless DC assist motor in column- or rack-mounted EPS systems.

IC Role / Device Role / Timing Role: High-current phase switch operating at 10–50 kHz with precise gate timing and overcurrent detection.

Use Value: 175°C T_ch rating and low R_DS(on) sustain continuous 45 A phase current under hood temperatures up to 125°C ambient.

Use Scenario: Main contactor replacement in high-voltage isolation circuits managing 12 V battery connection to vehicle chassis ground during sleep/wake transitions.

IC Role / Device Role / Timing Role: Solid-state disconnect switch activated by microcontroller GPIO with soft-start and fault reporting.

Use Value: Avalanche energy rating handles inrush and load dump transients; TO-252 drain pad allows direct thermal coupling to aluminum chassis for passive cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	60 V, 220 A, DFN8 5×6 mm; R_DS(on) = 1.2 mΩ @ 10 V; higher current, smaller footprint, no AEC-Q101 certification.	Targeted at space-constrained industrial SMPS, not automotive-qualified systems.	Select only if AEC-Q101 is not required and board area is critical; requires requalification for automotive use.
IXTP45N06T	60 V, 45 A, TO-220; R_DS(on) = 12.5 mΩ @ 10 V; through-hole, higher R_DS(on), same AEC-Q101 qualification.	Suitable for legacy through-hole designs or prototyping where thermal mass and manual assembly are preferred.	Choose when TO-220 mechanical robustness or hand-soldering is needed; expect ~30% higher conduction loss vs. NP45N06VUK-E1-AY.

Compared with STL220N6F7 and IXTP45N06T, the NP45N06VUK-E1-AY uniquely balances AEC-Q101 compliance, TO-252 thermal performance, and 9.6 mΩ R_DS(on) in a production-ready automotive surface-mount package-making it optimal for volume BOMs requiring zero qualification overhead and proven under-hood reliability.

Availability

NP45N06VUK-E1-AY is available at Aetrix Electronics and suitable for automotive body control modules, 48 V mild hybrid converters, and electric power steering motor drivers requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for NP45N06VUK-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.

The NP45N06VUK-E1-AY belongs to Renesas' AEC-Q101-qualified power MOSFET product line, engineered specifically for high-reliability automotive power switching in engine control, chassis, and electrification systems.

FAQ

What is the maximum continuous drain current rating for NP45N06VUK-E1-AY at 100°C case temperature?

The NP45N06VUK-E1-AY has a DC drain current rating of ±45 A at T_C = 25°C. Derating is required above that temperature: using the provided derating curve on page 3, at T_C = 100°C, the maximum continuous I_D(DC) is approximately 28 A. This reflects thermal limitation-not electrical-due to R_th(ch–C) = 2.00 °C/W and safe operating area constraints.

Does NP45N06VUK-E1-AY include a built-in body diode, and what are its key parameters?

Yes, the NP45N06VUK-E1-AY integrates a monolithic body diode. Its forward voltage is 0.9–1.5 V at I_F = 45 A and V_GS = 0 V; reverse recovery time is 32 ns typical with Q_rr = 35 nC. These values are measured under specified test conditions (di/dt = 100 A/μs) and enable efficient freewheeling in synchronous rectifier and half-bridge configurations.

Is NP45N06VUK-E1-AY pin-compatible with NP45N06PUK-E1-AY?

No, NP45N06VUK-E1-AY and NP45N06PUK-E1-AY are not pin-compatible. The former uses TO-252 (MP-3ZP) with 3 leads and exposed drain fin; the latter uses TO-263 (MP-25ZP), a larger 4-lead package with different pin spacing and thermal pad layout. PCB redesign is required for substitution.

What gate drive voltage range is recommended for reliable operation of NP45N06VUK-E1-AY?

The NP45N06VUK-E1-AY specifies V_GS(th) = 2.0–4.0 V and is characterized at V_GS = 10 V for R_DS(on). For full enhancement and minimal R_DS(on), a gate drive of 10–15 V is recommended. Absolute maximum V_GS is ±20 V; exceeding this risks gate oxide damage. A 12 V rail with active pull-down is commonly used in automotive gate drivers for NP45N06VUK-E1-AY.

How does the avalanche rating of NP45N06VUK-E1-AY support automotive system robustness?

The NP45N06VUK-E1-AY is rated for repetitive avalanche energy E_AR = 36 mJ and current I_AR = 19 A. This capability allows it to safely absorb inductive kickback from solenoids, motors, or relays during switching transitions-preventing destructive voltage spikes in BCM, EPS, or transmission control units without requiring external snubbers or clamps.

NP45N06VUK-E1-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.6mOhm @ 23A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2540 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 75W (Tc)

Operating Temperature:: 175°C

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263-3

NP45N06VUK-E1-AY FAQ

1.How can I place an order for NP45N06VUK-E1-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP45N06VUK-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP45N06VUK-E1-AY reliable?

The price and inventory of NP45N06VUK-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP45N06VUK-E1-AY is usually 5 days.

3.What payment methods are accepted for NP45N06VUK-E1-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP45N06VUK-E1-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP45N06VUK-E1-AY?

NP45N06VUK-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP45N06VUK-E1-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP45N06VUK-E1-AY?

For technical support, including NP45N06VUK-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP45N06VUK-E1-AY requirements.

6.How does Aetrix verify that NP45N06VUK-E1-AY is sourced from the original manufacturer or authorized distributors?

All NP45N06VUK-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP45N06VUK-E1-AY meets industry standards.

7.What is the process for return or replacement of NP45N06VUK-E1-AY?

All NP45N06VUK-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP45N06VUK-E1-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP45N06VUK-E1-AY part is unused and in its original packaging.

Return procedure for NP45N06VUK-E1-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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