Renesas NP48N055KHE-E1-AY

Overview

NP48N055KHE-E1-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor control circuits. It delivers 48 A continuous drain current at TC = 25°C, features a maximum RDS(on) of 17 mΩ at VGS = 10 V and ID = 24 A, and supports 55 V drain-to-source voltage with built-in gate protection diode. Its TO-263 (MP-25ZK) package enables high-power thermal management in compact PCB layouts.

For engineers reviewing the NP48N055KHE-E1-AY datasheet, NP48N055KHE-E1-AY pinout, NP48N055KHE-E1-AY application, or NP48N055KHE-E1-AY equivalent, key selection criteria include channel temperature rating (175°C), avalanche energy capability (up to 100 mJ), low input capacitance (1600 pF typ.), and Pb-free pure Sn lead plating compatible with IR reflow soldering up to 260°C.

Technical Context

This device operates as a unidirectional high-side or low-side switch in hard-switched topologies. Its gate threshold voltage range (2.0–4.0 V) ensures reliable turn-on with standard 3.3 V or 5 V logic drivers, while its 1.76 °C/W channel-to-case thermal resistance supports sustained conduction under high ambient conditions.

The integrated body diode exhibits VF(S-D) = 1.0 V at IF = 48 A and trr = 40 ns, enabling moderate-frequency freewheeling in synchronous rectification and H-bridge configurations. Avalanche-rated operation (IAS = 48 A, EAS = 100 mJ at Tch = 25°C) permits robust handling of inductive load transients without external snubbers.

Key Specifications

Pinout & Package

NP48N055KHE-E1-AY uses the TO-263 (MP-25ZK) surface-mount package with exposed drain tab for thermal and electrical connection. The 4-pin configuration includes Gate, Drain, Source, and Fin (Drain) terminals - the Fin is electrically connected to Drain and serves as primary thermal interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXFH48N50P3 and STP48NF55, NP48N055KHE-E1-AY uniquely balances 55 V rating, 17 mΩ on-resistance, and TO-263 thermal performance-making it optimal for high-density, high-efficiency 48 V industrial power stages where board space and thermal resistance are constrained.

Availability

NP48N055KHE-E1-AY is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and uninterruptible power systems requiring stable component supply across multi-year production cycles.

Supply support for NP48N055KHE-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.

NP48N055KHE-E1-AY belongs to Renesas' legacy high-current N-channel MOSFET product line targeting industrial switching applications where reliability, avalanche ruggedness, and thermal performance are critical.

FAQ

What is the maximum continuous drain current rating for NP48N055KHE-E1-AY?

NP48N055KHE-E1-AY is rated for ±48 A continuous drain current at case temperature TC = 25°C. At elevated case temperatures, derating applies per Figure 2 in the datasheet: e.g., at TC = 100°C, maximum ID(DC) drops to approximately 28 A. This rating assumes proper heatsinking via the TO-263 drain tab and adherence to the specified Rth(ch-C) = 1.76 °C/W thermal path.

Does NP48N055KHE-E1-AY have built-in ESD protection?

Yes, NP48N055KHE-E1-AY integrates a gate-to-source protection diode explicitly described in the Equivalent Circuit diagram (page 9). This diode provides basic ESD immunity but does not eliminate the need for external gate protection in high-noise environments or when subjected to repetitive overvoltage transients exceeding ±20 V.

Can NP48N055KHE-E1-AY be used in avalanche mode repeatedly?

No - NP48N055KHE-E1-AY is rated for single-pulse avalanche energy only (EAS = 100 mJ at Tch = 25°C). The datasheet specifies no repetitive avalanche capability, and repeated exposure to avalanche conditions will degrade reliability. Designers must ensure circuit conditions prevent recurrent inductive switching stress beyond the single-pulse limit.

What is the gate threshold voltage range for NP48N055KHE-E1-AY?

NP48N055KHE-E1-AY has a gate threshold voltage VGS(th) ranging from 2.0 V to 4.0 V (min to max) at ID = 250 μA, as confirmed in the Electrical Characteristics table. This range ensures compatibility with both 3.3 V and 5 V logic-level gate drivers while maintaining noise immunity against false turn-on in noisy industrial settings.

Is NP48N055KHE-E1-AY RoHS compliant and lead-free?

Yes, NP48N055KHE-E1-AY uses pure Sn (tin) lead plating and is explicitly marked "Pb-free" in the Ordering Information section. It complies with the EU RoHS Directive and is qualified for infrared reflow soldering up to 260°C with ≤10 seconds dwell time, as documented in the Recommended Soldering Conditions table.