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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP48N055MHE-S18-AY

Name: NP48N055MHE-S18-AY
Brand: Renesas
SKU: NP48N055MHE-S18-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP48N055MHE-S18-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: NP48N055MHE-S18-AY.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

NP48N055MHE-S18-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial motor drives and DC-DC converters. It delivers 48 A continuous drain current at TC = 25°C, features a maximum R_DS(on) of 17 mΩ at V_GS = 10 V and I_D = 24 A, and supports 55 V drain-to-source voltage with built-in gate protection diode. Its TO-220 (MP-25K) package enables robust thermal management in high-power linear and switching regulators.

For engineers reviewing the NP48N055MHE-S18-AY datasheet, NP48N055MHE-S18-AY pinout, NP48N055MHE-S18-AY application, or NP48N055MHE-S18-AY equivalent, key selection criteria include channel temperature rating (175°C), avalanche energy capability (2.3–100 mJ), low input capacitance (1600 pF typ.), and gate charge (33–50 nC) - all critical for hard-switched SMPS and motor H-bridge designs.

Technical Context

This device operates as a unidirectional, enhancement-mode N-channel power switch with integrated gate protection diode. Its forward transfer admittance |y_fs| ranges from 7 to 17 S at V_DS = 10 V and I_D = 24 A, and threshold voltage V_GS(th) is specified between 2.0 V and 4.0 V at I_D = 250 μA.

Switching performance is characterized by turn-on delay (22–48 ns), rise time (16–40 ns), turn-off delay (35–70 ns), and fall time (12–30 ns) under V_DD = 28 V, I_D = 24 A, and R_G = 1 Ω conditions. Body diode recovery is defined by t_rr = 40 ns and Q_rr = 55 nC at I_F = 48 A and di/dt = 100 A/μs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche breakdown; defines safe operating range in 48 V bus systems.
R_DS(on) max	17 mΩ at V_GS = 10 V, I_D = 24 A - Directly determines conduction loss (P_cond ≈ I² × R_DS(on)) in high-current paths.
I_D(DC)	±48 A at T_C = 25°C - Continuous current rating limited by package thermal resistance (R_th(ch-C) = 1.76 °C/W).
E_AS	2.3 / 78 / 100 mJ - Single-pulse avalanche energy at I_AS = 10 / 28 / 48 A; enables robustness against inductive switching transients.
C_iss	1600 pF typ. - Input capacitance governing gate drive power requirement and switching speed trade-off.
Q_G	33–50 nC - Total gate charge defining minimum driver current needed for fast edge rates in PWM control.
T_ch max	175°C - Maximum allowable channel temperature; sets upper limit for thermal design margin in sealed enclosures.

Pinout & Package

NP48N055MHE-S18-AY uses the TO-220 (MP-25K) package - a through-hole, thermally enhanced variant with integral metal tab (Drain-connected fin) and 3-pin layout optimized for heatsink mounting and high-power dissipation (P_T = 85 W at T_C = 25°C).

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate	Control terminal; requires ≥10 V drive for full enhancement; protected by internal Zener diode.
2 (Center)	Drain	Main power output node; electrically connected to metal tab (fin); must be isolated from heatsink unless referenced to system ground.
3 (Right)	Source	Power return path and reference for gate drive; common node for current sensing and feedback loops.

Key Features

Feature	Design Value
Channel temperature rating	175°C - Enables operation in high-ambient environments (e.g., enclosed motor drives) without derating below full current.
Super low R_DS(on)	17 mΩ max at V_GS = 10 V - Reduces conduction losses by >30% vs. legacy 55 V MOSFETs, improving efficiency in 12–48 V systems.
Built-in gate protection diode	Zener-clamped gate-source structure - Absorbs ESD events up to ±20 V without external components, simplifying PCB layout.
Low input capacitance	C_iss = 1600 pF typ. - Minimizes gate drive power and enables faster switching with standard 1-A drivers.
Avalanche-rated	Single-pulse E_AS up to 100 mJ - Withstands inductive kickback in relay/snubberless flyback circuits without external clamping.

Applications

Motor Drive Inverter	DC-DC Buck Converter
Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers for industrial pumps and fans. IC Role / Device Role / Timing Role: High-side or low-side power switch handling 30–45 A peak load current with 20 kHz PWM switching. Use Value: Low R_DS(on) minimizes I²R heating during continuous conduction mode; 175°C rating ensures reliability under stall conditions.	Use Scenario: Main synchronous rectifier in 48 V → 12 V step-down converter for telecom power shelves. IC Role / Device Role / Timing Role: Power FET in high-frequency (300–500 kHz) buck stage, driven by dedicated gate controller. Use Value: Fast switching (t_f ≤ 30 ns) and low Q_G reduce transition losses; C_oss = 250–380 pF enables zero-voltage switching optimization.
Industrial Power Supply	UPS Output Stage
Use Scenario: Primary-side switch in 1 kW offline LLC resonant converter with PFC front-end. IC Role / Device Role / Timing Role: Hard-switched main transistor operating at 100–200 kHz with 55 V blocking requirement. Use Value: Avalanche energy rating (78 mJ at I_AS = 28 A) sustains repeated overvoltage spikes during transient load steps.	Use Scenario: Bidirectional switching element in online UPS inverter bridge delivering clean 230 VAC sine wave. IC Role / Device Role / Timing Role: N-channel switch in complementary pair configuration, conducting 48 A RMS with forced-air cooling. Use Value: TO-220 (MP-25K) package provides mechanical stability and thermal interface compatibility with standard heatsinks used in rack-mount UPS units.

Motor Drive Inverter

DC-DC Buck Converter

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers for industrial pumps and fans.

IC Role / Device Role / Timing Role: High-side or low-side power switch handling 30–45 A peak load current with 20 kHz PWM switching.

Use Value: Low R_DS(on) minimizes I²R heating during continuous conduction mode; 175°C rating ensures reliability under stall conditions.

Use Scenario: Main synchronous rectifier in 48 V → 12 V step-down converter for telecom power shelves.

IC Role / Device Role / Timing Role: Power FET in high-frequency (300–500 kHz) buck stage, driven by dedicated gate controller.

Use Value: Fast switching (t_f ≤ 30 ns) and low Q_G reduce transition losses; C_oss = 250–380 pF enables zero-voltage switching optimization.

Industrial Power Supply

UPS Output Stage

Use Scenario: Primary-side switch in 1 kW offline LLC resonant converter with PFC front-end.

IC Role / Device Role / Timing Role: Hard-switched main transistor operating at 100–200 kHz with 55 V blocking requirement.

Use Value: Avalanche energy rating (78 mJ at I_AS = 28 A) sustains repeated overvoltage spikes during transient load steps.

Use Scenario: Bidirectional switching element in online UPS inverter bridge delivering clean 230 VAC sine wave.

IC Role / Device Role / Timing Role: N-channel switch in complementary pair configuration, conducting 48 A RMS with forced-air cooling.

Use Value: TO-220 (MP-25K) package provides mechanical stability and thermal interface compatibility with standard heatsinks used in rack-mount UPS units.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP48NF55	R_DS(on) = 14 mΩ max (V_GS = 10 V), higher C_iss = 2200 pF, same TO-220 package.	Better conduction loss but slower switching; suited for lower-frequency (<100 kHz) applications where gate drive strength is limited.	Prefer when minimizing conduction loss dominates over switching loss; verify gate driver capability for higher C_iss.
IRF3205	R_DS(on) = 8.0 mΩ max, lower V_DSS = 55 V (same), but T_ch = 175°C and E_AS not specified in datasheet.	Lacks documented avalanche ruggedness; unsuitable for inductive switching without external snubbers.	Select only in non-inductive or clamped topologies; avoid in motor drives or unclamped flyback converters.

Compared with STP48NF55 and IRF3205, NP48N055MHE-S18-AY offers balanced trade-offs: certified avalanche energy (up to 100 mJ), verified 175°C channel rating, and moderate C_iss/Q_G enabling efficient 200–500 kHz operation without overloading standard gate drivers.

Availability

NP48N055MHE-S18-AY is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.

Supply support for NP48N055MHE-S18-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices for industrial and automotive markets.

NP48N055MHE-S18-AY belongs to Renesas' legacy high-current N-channel MOSFET product line, engineered for ruggedized switching in industrial power conversion, motor control, and UPS systems where thermal stability and avalanche tolerance are mandatory.

FAQ

What is the maximum continuous drain current rating for NP48N055MHE-S18-AY?

NP48N055MHE-S18-AY is rated for ±48 A continuous drain current at case temperature T_C = 25°C. This rating assumes proper heatsinking and is derated linearly above 25°C per the R_th(ch-C) = 1.76 °C/W thermal resistance. At T_C = 100°C, the usable I_D(DC) drops to approximately 28 A, as confirmed in the Safe Operating Area (SOA) curves on page 4 of the D14094EJ6V0DS datasheet.

Does NP48N055MHE-S18-AY have built-in gate protection?

Yes, NP48N055MHE-S18-AY integrates a gate-to-source Zener diode for electrostatic discharge (ESD) protection, as shown in the equivalent circuit diagram on page 9 of the datasheet. This internal diode clamps gate voltage to ±20 V, but Renesas explicitly states that an external protection circuit remains necessary if transient voltages exceeding the rated ±20 V may occur in the application.

What is the typical input capacitance (C_iss) of NP48N055MHE-S18-AY and how does it affect gate drive design?

NP48N055MHE-S18-AY has a typical input capacitance C_iss of 1600 pF at V_DS = 25 V, with a maximum of 2400 pF. This value directly determines gate charge requirements: with total gate charge Q_G of 33–50 nC, a 1-A peak gate driver can achieve ~50 ns rise/fall times. Designers must size gate resistors and drivers to manage dV/dt-induced shoot-through risk in half-bridge configurations.

Can NP48N055MHE-S18-AY be used in avalanche mode, and what are its rated single-pulse avalanche parameters?

Yes, NP48N055MHE-S18-AY is fully rated for single-pulse avalanche operation. Per the Absolute Maximum Ratings table, it supports I_AS = 48 A (at starting T_ch = 25°C, R_G = 25 Ω, V_GS = 20 → 0 V) with corresponding E_AS = 2.3 mJ, 78 mJ, or 100 mJ depending on pulse conditions. These values are validated per test circuit 1 (page 3) and Figure 4 (page 4) of the datasheet.

What is the package type and lead plating specification for NP48N055MHE-S18-AY?

NP48N055MHE-S18-AY uses the TO-220 (MP-25K) package, weighing approximately 1.9 g. Its lead plating is pure tin (Sn), confirming Pb-free compliance per RoHS Directive. The "S18" suffix denotes tube packaging (50 pcs/tube), and "AY" indicates standard marking format including "48N055", lot code, and "NEC HE" branding, as detailed in the Marking Information section (page 9).

NP48N055MHE-S18-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

NP48N055MHE-S18-AY FAQ

1.How can I place an order for NP48N055MHE-S18-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP48N055MHE-S18-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP48N055MHE-S18-AY reliable?

The price and inventory of NP48N055MHE-S18-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP48N055MHE-S18-AY is usually 5 days.

3.What payment methods are accepted for NP48N055MHE-S18-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP48N055MHE-S18-AY transactions.

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4.How is shipping managed for NP48N055MHE-S18-AY?

NP48N055MHE-S18-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP48N055MHE-S18-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP48N055MHE-S18-AY?

For technical support, including NP48N055MHE-S18-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP48N055MHE-S18-AY requirements.

6.How does Aetrix verify that NP48N055MHE-S18-AY is sourced from the original manufacturer or authorized distributors?

All NP48N055MHE-S18-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP48N055MHE-S18-AY meets industry standards.

7.What is the process for return or replacement of NP48N055MHE-S18-AY?

All NP48N055MHE-S18-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP48N055MHE-S18-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP48N055MHE-S18-AY part is unused and in its original packaging.

Return procedure for NP48N055MHE-S18-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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