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Renesas NP55N03SUG-E1-AY
- Part No.:
- NP55N03SUG-E1-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
NP55N03SUG-E1-AY.pdf
- Description:
- MOSFET N-CH 30V 55A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:2,259
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Product details
Overview
NP55N03SUG-E1-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor control circuits, featuring 30 V VDSS, 55 A ID(DC), 5.0 mΩ RDS(on) at VGS = 10 V, 175 °C channel temperature rating, and TO-252 (MP-3ZK) surface-mount package.
For engineers reviewing the NP55N03SUG-E1-AY datasheet, NP55N03SUG-E1-AY pinout, NP55N03SUG-E1-AY application, or NP55N03SUG-E1-AY equivalent, this device is selected for low-conduction-loss, high-pulse-current switching where thermal robustness and Pb-free compliance are required in board-level power stages.
Technical Context
This MOSFET uses a planar silicon process optimized for low RDS(on) and fast switching with controlled QG (62–93 nC) and QGD (21 nC), enabling efficient operation in synchronous buck converters and H-bridge motor drivers. Its body diode exhibits 40 ns trr and 34 nC Qrr under 100 A/μs di/dt, supporting moderate-frequency freewheeling.
The device supports gate drive voltages up to ±20 V, with VGS(th) specified from 2.0 V to 4.0 V at 250 μA, ensuring reliable turn-on across temperature. Its Rth(ch–C) of 1.95 °C/W enables high-power dissipation when mounted on thermally enhanced PCB copper areas.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum drain-source blocking voltage; suitable for 24 V nominal bus systems with transient margin. |
| RDS(on) max | 5.0 mΩ at VGS = 10 V, ID = 28 A - Enables <1.4 W conduction loss at 55 A DC, critical for thermal management. |
| ID(DC) | ±55 A at TC = 25 °C - Supports high-current load switching without external heatsink under adequate PCB copper area. |
| QG | 62–93 nC - Determines gate driver current requirement; ~1.9 A peak needed for 50 ns turn-on with 10 V step. |
| tr/tf | 52–130 ns / 12–30 ns - Fast edge rates support >100 kHz PWM operation with minimized switching loss. |
| Tch max | 175 °C - Allows sustained operation in high-ambient industrial environments with derated power above 25 °C case temp. |
| Ciss | 3500 pF typ. at VDS = 25 V - Impacts gate drive energy and EMI filtering requirements in hard-switched topologies. |
Pinout & Package
NP55N03SUG-E1-AY is housed in a TO-252 (MP-3ZK) surface-mount package with exposed drain pad for thermal conduction. The package weighs typ. 0.27 g and features pure Sn (Pb-free) lead plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1. Gate | Control terminal | Receives voltage-controlled signal to modulate channel conductivity; requires low-impedance drive due to 93 nC QG. |
| 2. Drain | High-side current path | Connected to power rail or inductive load; electrically tied to exposed metal tab (fin) for thermal and current conduction. |
| 3. Source | Reference node | Serves as return path for load current and gate drive reference; must be low-inductance for stable switching. |
| 4. Fin (Drain) | Thermal & electrical drain extension | Exposed copper pad soldered to PCB ground plane or dedicated thermal pad; carries full drain current and dissipates heat. |
Key Features
| Feature | Design Value |
|---|---|
| 175 °C channel temperature rating | Enables continuous operation in sealed enclosures or high-ambient environments without forced air cooling. |
| 5.0 mΩ RDS(on) max at 10 V gate drive | Reduces I²R losses by >30% vs. comparable 8 mΩ MOSFETs, directly lowering junction temperature rise. |
| Repetitive avalanche capability (IAR = 33 A, EAR = 109 mJ) | Provides ruggedness against inductive switching transients without external snubbers in motor or solenoid drives. |
| Pb-free (pure Sn) plating | Complies with RoHS Directive 2011/65/EU and supports lead-free reflow profiles up to 260 °C peak. |
| Low QGD/QG ratio (~22%) | Improves Miller immunity and enables faster, more controllable turn-off in high-dV/dt applications. |
Applications
| DC Motor Drive Stage | Industrial DC-DC Converter |
|---|---|
|
Use Scenario: Half-bridge or H-bridge control of 24 V brushed DC motors in factory automation actuators. IC Role / Device Role / Timing Role: High-side and low-side switching element handling bidirectional 40–55 A peak currents with PWM frequencies up to 50 kHz. Use Value: Low RDS(on) minimizes heat generation during stall conditions; 175 °C rating ensures reliability under continuous torque demand. |
Use Scenario: Primary-side synchronous rectifier or secondary-side switch in isolated 24 V input, 5–12 V output industrial SMPS. IC Role / Device Role / Timing Role: Power switch in buck, forward, or active clamp topology operating at 100–300 kHz with 55 A pulsed load current. Use Value: Fast tr/tf and low Ciss reduce switching loss; avalanche rating tolerates leakage inductance spikes without clamping circuitry. |
| Power Distribution Switch | UPS Output Stage |
|
Use Scenario: Hot-swap and overload-protected 24–30 V distribution in programmable logic controller (PLC) backplanes. IC Role / Device Role / Timing Role: Single-pole, high-current electronic fuse with current sensing and fast turn-off (<150 ns td(off)) on overcurrent detection. Use Value: 220 A pulse rating allows brief inrush tolerance; low VGS(th) spread ensures predictable turn-on across temperature. |
Use Scenario: Inverter-stage switching in line-interactive UPS delivering clean 120/230 V AC from 24–48 V battery bank. IC Role / Device Role / Timing Role: Low-side switch in full-bridge inverter leg, conducting 55 A RMS with body diode freewheeling during dead time. Use Value: 40 ns trr and low Qrr minimize reverse recovery loss and EMI; TO-252 thermal pad enables direct PCB heatsinking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF540NPBF | RDS(on) = 44 mΩ @ 10 V; TO-220 package; lower current (33 A DC); no avalanche rating. | Lower power density; unsuitable for >30 A continuous or repetitive surge conditions. | Select only for cost-sensitive, low-current (<25 A) linear or quasi-resonant designs where thermal margin is ample. |
| STP55NF03L | RDS(on) = 6.5 mΩ @ 10 V; TO-220FP package; 55 A DC; 150 °C Tj max; no specified avalanche energy. | Larger footprint; higher RDS(on) increases conduction loss by ~30%; lacks 175 °C channel rating. | Acceptable for non-derated 25 °C ambient designs with heatsink; avoid in sealed or high-temp industrial enclosures. |
Compared with IRF540NPBF and STP55NF03L, NP55N03SUG-E1-AY delivers superior thermal capability (175 °C vs. ≤150 °C), lower conduction loss (5.0 mΩ vs. ≥6.5 mΩ), and verified repetitive avalanche ruggedness-making it the preferred choice for high-reliability, high-current industrial switching where PCB space and thermal performance are constrained.
Availability
NP55N03SUG-E1-AY is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power conversion, and uninterruptible power supply (UPS) output stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for NP55N03SUG-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.
NP55N03SUG-E1-AY belongs to Renesas' legacy power MOSFET product line, engineered for high-current, high-ruggedness switching in industrial power systems where thermal resilience and Pb-free compliance are mandatory.
FAQ
What is the maximum continuous drain current rating for NP55N03SUG-E1-AY?
The NP55N03SUG-E1-AY is rated for ±55 A DC drain current at case temperature (TC) = 25 °C. This rating assumes proper PCB copper area for thermal conduction through the exposed drain fin. At higher case temperatures, current must be derated per the datasheet's power dissipation curve-e.g., ~35 A at TC = 100 °C. The NP55N03SUG-E1-AY also supports ±220 A pulsed current for ≤10 μs pulses at ≤1% duty cycle.
Does NP55N03SUG-E1-AY support gate drive voltages below 10 V?
Yes, NP55N03SUG-E1-AY has a gate threshold voltage (VGS(th)) range of 2.0–4.0 V, allowing turn-on with logic-level gate drivers. However, RDS(on) is only guaranteed ≤5.0 mΩ when VGS = 10 V. At VGS = 4.5 V, RDS(on) rises significantly (typ. ~15 mΩ), increasing conduction loss. For optimal efficiency, NP55N03SUG-E1-AY should be driven with ≥10 V gate voltage in high-current applications.
Is NP55N03SUG-E1-AY suitable for avalanche-prone circuits like inductive load switching?
Yes, NP55N03SUG-E1-AY is explicitly characterized for repetitive avalanche operation: IAR = 33 A and EAR = 109 mJ at Tch ≤ 150 °C, VDD = 15 V, and RG = 25 Ω. This makes NP55N03SUG-E1-AY appropriate for driving solenoids, relays, and DC motors without external avalanche clamps-provided layout minimizes stray inductance and gate drive remains stable during turn-off.
What is the thermal resistance from channel to case for NP55N03SUG-E1-AY?
The channel-to-case thermal resistance (Rth(ch–C)) of NP55N03SUG-E1-AY is 1.95 °C/W, measured under standard JEDEC test conditions. This low value reflects the efficient thermal path from die to the exposed drain fin in the TO-252 package. To achieve this performance, NP55N03SUG-E1-AY must be soldered to a minimum 1-inch² copper pour (2 oz) with multiple thermal vias-otherwise, effective Rth will increase significantly.
Can NP55N03SUG-E1-AY be used in lead-free reflow processes?
Yes, NP55N03SUG-E1-AY features pure Sn (tin) lead plating and is qualified for lead-free reflow soldering. The recommended maximum package surface temperature is 260 °C for ≤10 seconds, with time above 220 °C limited to ≤60 seconds. Up to three reflow cycles are permitted. These conditions align with IPC/JEDEC J-STD-020D, confirming NP55N03SUG-E1-AY's suitability for modern RoHS-compliant manufacturing.
NP55N03SUG-E1-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5mOhm @ 28A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 93 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.2W (Ta), 77W (Tc)
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (MP-3ZK)
NP55N03SUG-E1-AY FAQ
1.How can I place an order for NP55N03SUG-E1-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for NP55N03SUG-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NP55N03SUG-E1-AY reliable?
The price and inventory of NP55N03SUG-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP55N03SUG-E1-AY is usually 5 days.
3.What payment methods are accepted for NP55N03SUG-E1-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP55N03SUG-E1-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NP55N03SUG-E1-AY?
NP55N03SUG-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NP55N03SUG-E1-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NP55N03SUG-E1-AY?
For technical support, including NP55N03SUG-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP55N03SUG-E1-AY requirements.
6.How does Aetrix verify that NP55N03SUG-E1-AY is sourced from the original manufacturer or authorized distributors?
All NP55N03SUG-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP55N03SUG-E1-AY meets industry standards.
7.What is the process for return or replacement of NP55N03SUG-E1-AY?
All NP55N03SUG-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP55N03SUG-E1-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NP55N03SUG-E1-AY part is unused and in its original packaging.
Return procedure for NP55N03SUG-E1-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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