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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP55N055SDG-E2-AY

Name: NP55N055SDG-E2-AY
Brand: Renesas
SKU: NP55N055SDG-E2-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP55N055SDG-E2-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: NP55N055SDG-E2-AY.pdf

Description:: TRANSISTOR

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Product details

Overview

NP55N055SDG-E2-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial motor drives and DC-DC converters. It delivers 55 A continuous drain current at TC = 25°C, features a logic-level gate (V_GS(th) = 1.5–2.5 V), and achieves R_DS(on) ≤ 9.5 mΩ at V_GS = 10 V and I_D = 28 A.

For engineers reviewing the NP55N055SDG-E2-AY datasheet, NP55N055SDG-E2-AY pinout, NP55N055SDG-E2-AY application, or NP55N055SDG-E2-AY equivalent, key selection criteria include its 55 V V_DSS, 175°C channel temperature rating, TO-252 (MP-3ZK) package thermal performance (R_th(ch-C) = 1.95°C/W), and avalanche ruggedness (E_AR = 73 mJ).

Technical Context

This device uses a planar vertical DMOS structure optimized for low conduction loss and fast switching in hard-switched topologies. Its gate charge profile (Q_G = 64–96 nC, Q_GD = 18 nC) supports efficient operation with standard gate drivers at 10 V drive, while the body diode exhibits t_rr = 35 ns and Q_rr = 38 nC under specified conditions.

The MOSFET is characterized for repetitive avalanche operation at T_ch < 150°C, V_DD = 28 V, and R_G = 25 Ω, enabling robustness in inductive load switching without external snubbers. Its C_iss = 3200 pF (typ.) and C_oss = 270 pF (typ.) support stable gate control and predictable turn-off behavior.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage in off-state; suitable for 48 V nominal bus systems.
R_DS(on)1	9.5 mΩ max at V_GS = 10 V, I_D = 28 A - Enables <1.5 W conduction loss at 28 A DC.
I_D(DC)	±55 A at T_C = 25°C - Requires heatsinking to maintain case temperature ≤ 100°C for full current.
T_ch max	175°C - Supports operation in high-ambient industrial environments with derated power.
Q_G	64–96 nC - Determines gate driver current requirement (~1–2 A peak for 100 ns turn-on).
E_AR	73 mJ - Specifies single-pulse avalanche energy handling capability at V_DD = 28 V.
C_iss	3200 pF typ. at V_DS = 25 V - Impacts gate drive power loss and switching speed stability.

Pinout & Package

NP55N055SDG-E2-AY is housed in a TO-252 (MP-3ZK) surface-mount package with exposed drain tab for thermal conduction. The package measures 10.4 mm × 6.5 mm × 2.3 mm and features gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts logic-level (≥4.5 V) or 10 V gate drive; threshold V_GS(th) = 1.5–2.5 V ensures reliable turn-on with microcontroller outputs.
2 (Drain)	Main current path (high-side)	Connected to exposed metal tab; must be soldered to PCB copper pour for thermal management and current return.
3 (Source)	Reference node / current return	Serves as signal ground reference for gate drive; requires low-inductance layout to minimize switching oscillation.
4 (Fin/Drain)	Thermal & electrical drain extension	Integral part of Drain terminal; electrically and thermally tied to Pin 2 - not isolated or floating.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Operates fully enhanced with V_GS ≥ 4.5 V, enabling direct interface with 3.3 V/5 V MCUs without level-shifting.
Low R_DS(on) at 4.5 V	R_DS(on)2 ≤ 12 mΩ at V_GS = 4.5 V and I_D = 28 A - reduces conduction loss in 5 V gate-drive applications.
High avalanche energy rating	73 mJ repetitive avalanche energy allows safe operation during inductive load turn-off transients without clamping circuits.
Robust body diode	t_rr = 35 ns and Q_rr = 38 nC enable use in synchronous rectification or freewheeling paths with minimal reverse recovery loss.
175°C channel temperature rating	Supports extended thermal margin in sealed enclosures or high-ambient environments up to 105°C ambient with proper heatsinking.

Applications

Industrial Motor Drives	DC-DC Converters
Use Scenario: Half-bridge or H-bridge switching in 24–48 V BLDC motor controllers for factory automation actuators. IC Role / Device Role / Timing Role: High-side and low-side power switch handling continuous 30–50 A phase currents with PWM frequencies up to 50 kHz. Use Value: Low R_DS(on) and fast switching reduce total losses (<2.5 W at 40 A), improving system efficiency and thermal footprint.	Use Scenario: Primary-side switch in isolated 48 V input → 12 V output flyback or forward converters for industrial PLC power supplies. IC Role / Device Role / Timing Role: Main power switch operating at 100–200 kHz with 55 V blocking capability and avalanche-rated turn-off. Use Value: 73 mJ avalanche energy eliminates need for external RCD snubber, simplifying BOM and layout.
Uninterruptible Power Supplies	Battery Management Systems
Use Scenario: Bidirectional DC bus switch in online UPS inverters managing 48 V battery banks and AC line synchronization. IC Role / Device Role / Timing Role: High-current, low-loss switching element in inverter half-bridge with fast body diode for regenerative braking paths. Use Value: 35 ns reverse recovery time minimizes shoot-through risk and conduction loss during commutation.	Use Scenario: Active cell balancing or main discharge FET in 13S lithium-ion battery packs for material handling equipment. IC Role / Device Role / Timing Role: High-reliability power switch controlling 50 A continuous discharge current with overtemperature shutdown coordination. Use Value: 175°C channel rating enables operation at elevated temperatures inside sealed battery enclosures without derating.

Industrial Motor Drives

DC-DC Converters

Use Scenario: Half-bridge or H-bridge switching in 24–48 V BLDC motor controllers for factory automation actuators.

IC Role / Device Role / Timing Role: High-side and low-side power switch handling continuous 30–50 A phase currents with PWM frequencies up to 50 kHz.

Use Value: Low R_DS(on) and fast switching reduce total losses (<2.5 W at 40 A), improving system efficiency and thermal footprint.

Use Scenario: Primary-side switch in isolated 48 V input → 12 V output flyback or forward converters for industrial PLC power supplies.

IC Role / Device Role / Timing Role: Main power switch operating at 100–200 kHz with 55 V blocking capability and avalanche-rated turn-off.

Use Value: 73 mJ avalanche energy eliminates need for external RCD snubber, simplifying BOM and layout.

Uninterruptible Power Supplies

Battery Management Systems

Use Scenario: Bidirectional DC bus switch in online UPS inverters managing 48 V battery banks and AC line synchronization.

IC Role / Device Role / Timing Role: High-current, low-loss switching element in inverter half-bridge with fast body diode for regenerative braking paths.

Use Value: 35 ns reverse recovery time minimizes shoot-through risk and conduction loss during commutation.

Use Scenario: Active cell balancing or main discharge FET in 13S lithium-ion battery packs for material handling equipment.

IC Role / Device Role / Timing Role: High-reliability power switch controlling 50 A continuous discharge current with overtemperature shutdown coordination.

Use Value: 175°C channel rating enables operation at elevated temperatures inside sealed battery enclosures without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540NPBF	V_DSS = 100 V, R_DS(on) = 44 mΩ @ 10 V, TO-220 package, no avalanche rating	Higher voltage margin but significantly higher on-resistance and larger thermal resistance (R_th(j-c) ≈ 1.5°C/W vs. 1.95°C/W)	Select when 100 V blocking is required and board space allows through-hole mounting.
STP55NF06L	V_DSS = 60 V, R_DS(on) = 12 mΩ @ 10 V, TO-220FP package, rated for 175°C	Similar voltage and temperature rating but higher R_DS(on) and through-hole footprint; lacks published avalanche energy spec	Choose for legacy TO-220FP designs where surface-mount is not feasible and 12 mΩ is acceptable.

Compared with IRF540NPBF and STP55NF06L, NP55N055SDG-E2-AY offers superior conduction efficiency (9.5 mΩ), verified avalanche ruggedness (73 mJ), and compact TO-252 packaging - making it optimal for space-constrained, high-efficiency 48 V industrial switching applications requiring thermal and transient robustness.

Availability

NP55N055SDG-E2-AY is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term production continuity.

Supply support for NP55N055SDG-E2-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.

NP55N055SDG-E2-AY belongs to Renesas' legacy power MOSFET product line targeting high-current, high-reliability industrial switching - engineered for robustness in motor control, power conversion, and battery systems where thermal stability and avalanche tolerance are critical.

FAQ

What is the maximum continuous drain current rating for NP55N055SDG-E2-AY?

NP55N055SDG-E2-AY is rated for 55 A continuous drain current (I_D(DC)) at case temperature T_C = 25°C. At higher case temperatures, current must be derated per the datasheet's power dissipation curve - e.g., ~35 A at T_C = 100°C. This rating assumes adequate PCB copper area for heat spreading and is validated under JEDEC test conditions.

Does NP55N055SDG-E2-AY support logic-level gate drive?

Yes, NP55N055SDG-E2-AY is a logic-level MOSFET with V_GS(th) = 1.5–2.5 V and guaranteed R_DS(on) ≤ 12 mΩ at V_GS = 4.5 V and I_D = 28 A. This allows direct drive from 3.3 V or 5 V microcontrollers without gate driver ICs, though 10 V drive yields lowest R_DS(on) (≤9.5 mΩ).

What is the avalanche energy rating of NP55N055SDG-E2-AY?

NP55N055SDG-E2-AY is rated for 73 mJ repetitive avalanche energy (E_AR) under conditions of T_ch < 150°C, V_DD = 28 V, R_G = 25 Ω, and V_GS transitioning from 20 V to 0 V. This specification confirms ruggedness against inductive switching transients without external protection components.

What package type does NP55N055SDG-E2-AY use, and how is thermal performance characterized?

NP55N055SDG-E2-AY uses the TO-252 (MP-3ZK) surface-mount package with an exposed drain tab. Its thermal performance is characterized by R_th(ch-C) = 1.95°C/W (channel-to-case) and R_th(ch-A) = 125°C/W (channel-to-ambient). Effective heatsinking requires soldering the drain tab to ≥10 cm² of 2 oz copper on the PCB.

Is NP55N055SDG-E2-AY suitable for automotive applications?

NP55N055SDG-E2-AY is classified as a "Standard" quality grade device per Renesas documentation and is intended for industrial, computing, and consumer applications - not automotive. It lacks AEC-Q101 qualification, automotive-grade screening, or guaranteed operation across -40°C to +125°C junction range. For automotive use, consult Renesas' AEC-Q101-qualified power MOSFET portfolio instead of NP55N055SDG-E2-AY.

NP55N055SDG-E2-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

NP55N055SDG-E2-AY FAQ

1.How can I place an order for NP55N055SDG-E2-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP55N055SDG-E2-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP55N055SDG-E2-AY reliable?

The price and inventory of NP55N055SDG-E2-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP55N055SDG-E2-AY is usually 5 days.

3.What payment methods are accepted for NP55N055SDG-E2-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP55N055SDG-E2-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP55N055SDG-E2-AY?

NP55N055SDG-E2-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP55N055SDG-E2-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP55N055SDG-E2-AY?

For technical support, including NP55N055SDG-E2-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP55N055SDG-E2-AY requirements.

6.How does Aetrix verify that NP55N055SDG-E2-AY is sourced from the original manufacturer or authorized distributors?

All NP55N055SDG-E2-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP55N055SDG-E2-AY meets industry standards.

7.What is the process for return or replacement of NP55N055SDG-E2-AY?

All NP55N055SDG-E2-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP55N055SDG-E2-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP55N055SDG-E2-AY part is unused and in its original packaging.

Return procedure for NP55N055SDG-E2-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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