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Renesas NP60N03SUG-E1-AY
- Part No.:
- NP60N03SUG-E1-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
NP60N03SUG-E1-AY.pdf
- Description:
- MOSFET N-CH 30V 60A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:9,416
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Product details
Overview
NP60N03SUG-E1-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in automotive and industrial power stages. It delivers RDS(on) = 3.8 mΩ max at VGS = 10 V and ID = 30 A, supports ±60 A DC drain current, operates up to 175°C channel temperature, and is qualified to AEC-Q101 for under-hood automotive use - deployed in motor control inverters and battery disconnect switches.
For engineers reviewing the NP60N03SUG-E1-AY datasheet, NP60N03SUG-E1-AY pinout, NP60N03SUG-E1-AY application, or NP60N03SUG-E1-AY equivalent, key selection criteria include its TO-252 package thermal performance (Rth(ch-C) = 1.43°C/W), low gate charge (QG = 135 nC max), avalanche ruggedness (EAR = 168 mJ), and body diode recovery characteristics (trr = 42 ns).
Technical Context
This device uses a planar trench-gate silicon process optimized for low conduction loss and fast switching in 30 V systems. Its gate threshold voltage (VGS(th) = 2.0–4.0 V) enables robust drive with standard 3.3 V or 5 V logic-level controllers, while the 5000 pF typical input capacitance (Ciss) balances switching speed and EMI control.
The integrated body diode exhibits forward voltage VF(S-D) = 1.5 V max at 60 A and reverse recovery time trr = 42 ns under specified dI/dt conditions - critical for synchronous rectification and freewheeling in half-bridge topologies where shoot-through immunity and diode losses directly impact efficiency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage compatible with 24 V nominal automotive and industrial bus systems. |
| RDS(on) max | 3.8 mΩ at VGS = 10 V, ID = 30 A - Enables <1 W conduction loss at 30 A, reducing heatsink requirements. |
| ID(DC) | ±60 A - Supports high-power load switching without parallel devices in compact TO-252 footprint. |
| QG max | 135 nC - Determines gate driver power requirement; enables <100 ns turn-on with 1.5 A peak drive. |
| trr | 42 ns - Limits reverse recovery loss and EMI during hard-switched freewheeling in DC-DC converters. |
| EAR | 168 mJ - Specifies single-pulse avalanche energy handling capability for inductive load interruption. |
| Tch max | 175°C - Allows operation in high-ambient environments like engine compartments without derating. |
Pinout & Package
NP60N03SUG-E1-AY is housed in a TO-252 (MP-3ZK) surface-mount package with exposed drain pad for thermal and electrical performance. The package weighs typ. 0.27 g and features pure Sn (Pb-free) lead plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives voltage-controlled signal to modulate channel conductivity; requires <135 nC total charge for full enhancement. |
| 2 (Drain) | Main current output terminal | Connected to high-side load or bus; electrically tied to metal tab (fin) for low-inductance, high-current path and thermal conduction. |
| 3 (Source) | Main current return terminal | Serves as reference node for gate drive and current sensing; forms source of internal body diode (anode). |
| 4 (Fin/Drain) | Exposed drain pad | Provides primary thermal path to PCB copper and mechanical mounting surface; must be soldered to large thermal pad per JEDEC standards. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control modules and battery management systems. |
| 175°C channel rating | Enables uninterrupted operation in high-temperature enclosures without thermal shutdown or parameter drift. |
| Low RDS(on) × QG figure-of-merit | ~513 mΩ·nC - Balances conduction and switching losses for high-efficiency 20–100 kHz power stages. |
| Repetitive avalanche rated | Withstands 41 A repetitive avalanche current (Tch ≤ 150°C, RG = 25 Ω), supporting inductive load switching without snubbers. |
| Fast body diode recovery | trr = 42 ns and Qrr = 43 nC enable efficient freewheeling in synchronous buck and half-bridge converters. |
Applications
| Automotive Motor Control | Battery Disconnect Switch |
|---|---|
|
Use Scenario: Driving 12 V/24 V brushed DC motors in HVAC actuators and power seat modules. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling motor direction and torque via PWM. Use Value: Low RDS(on) minimizes I²R heating at 30–60 A peak loads; AEC-Q101 qualification ensures reliability over 15-year vehicle life. |
Use Scenario: Isolating 12 V starter battery from auxiliary loads during cranking or fault conditions. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays in battery management systems. Use Value: 60 A DC rating handles cold-cranking surges; avalanche ruggedness absorbs inductive kickback from solenoid coils. |
| Industrial DC-DC Converter | Power Tool Motor Driver |
|
Use Scenario: Synchronous rectifier in isolated 24 V → 5 V/12 V flyback or forward converters for PLC I/O modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss. Use Value: Fast trr and low VF(S-D) cut diode conduction loss by >40% vs. discrete Schottky, improving efficiency at light-to-moderate loads. |
Use Scenario: Half-bridge high-current H-bridge for cordless drill and saw motor control. IC Role / Device Role / Timing Role: Power switch in each leg of the bridge, driven by isolated gate drivers. Use Value: TO-252 thermal design supports >5 kW short-duration bursts; Rth(ch-C) = 1.43°C/W allows direct heatsinking to aluminum chassis. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL110N3LLH6 | RDS(on) = 2.8 mΩ @ 10 V (lower), but QG = 160 nC (higher); TO-263 package with larger footprint. | Better conduction loss but slower switching; suited for lower-frequency (<50 kHz), higher-current applications. | Select when minimizing I²R loss dominates over gate drive complexity and EMI concerns. |
| IRF1404ZPBF | RDS(on) = 4.7 mΩ @ 10 V (higher); TO-220 package; no AEC-Q101 qualification; Rth(ch-A) = 62°C/W (worse ambient dissipation). | Limited to non-automotive industrial use; requires larger heatsink for same power level. | Choose only for cost-sensitive, non-automotive designs where qualification and thermal performance are secondary. |
Compared with STL110N3LLH6 and IRF1404ZPBF, NP60N03SUG-E1-AY offers the optimal balance of low RDS(on), moderate QG, AEC-Q101 compliance, and TO-252 thermal efficiency - making it preferred for space-constrained, thermally demanding automotive and industrial switching applications.
Availability
NP60N03SUG-E1-AY is available at Aetrix Electronics and suitable for automotive motor control, battery disconnect switching, and industrial DC-DC converter designs requiring stable component supply across multi-year production cycles.
Supply support for NP60N03SUG-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
NP60N03SUG-E1-AY belongs to Renesas' legacy power MOSFET product line, engineered specifically for high-reliability, high-current switching in automotive subsystems and ruggedized industrial equipment.
FAQ
What is the maximum continuous drain current rating for NP60N03SUG-E1-AY?
The NP60N03SUG-E1-AY is rated for ±60 A DC drain current at TC = 25°C. This rating assumes proper PCB thermal design with the exposed drain pad soldered to ≥10 cm² of 2 oz copper. At elevated case temperatures, derating applies per the datasheet's power dissipation curve - e.g., ~40 A at TC = 100°C. Always verify thermal margin using Rth(ch-C) = 1.43°C/W in your layout.
Is NP60N03SUG-E1-AY suitable for 12 V automotive battery switching applications?
Yes, NP60N03SUG-E1-AY is explicitly qualified to AEC-Q101 and rated for VDSS = 30 V, making it ideal for 12 V nominal (up to 16 V transient) automotive battery switching. Its ±60 A DC rating handles cranking surges, and its 175°C channel temperature rating supports under-hood placement. The device also withstands repetitive avalanche events common in relay-replacement applications.
What gate drive voltage is required to fully enhance NP60N03SUG-E1-AY?
NP60N03SUG-E1-AY achieves its specified RDS(on) = 3.8 mΩ maximum at VGS = 10 V. Its gate threshold voltage VGS(th) ranges from 2.0 V to 4.0 V, so logic-level drive (e.g., 5 V) provides partial enhancement but increases RDS(on) significantly. For minimal conduction loss and reliable switching, a 10 V gate drive is recommended - achievable with dedicated gate drivers or bootstrap circuits in half-bridge configurations.
Does NP60N03SUG-E1-AY include an integrated body diode, and what are its key parameters?
Yes, NP60N03SUG-E1-AY integrates a parasitic body diode between source and drain. Its forward voltage VF(S-D) is 1.5 V maximum at IF = 60 A and VGS = 0 V, and its reverse recovery time trr is 42 ns under standardized test conditions (dI/dt = 100 A/μs). These values make it suitable for freewheeling and synchronous rectification in medium-frequency DC-DC topologies.
What is the thermal resistance from channel to case (Rth(ch-C)) for NP60N03SUG-E1-AY?
The channel-to-case thermal resistance Rth(ch-C) for NP60N03SUG-E1-AY is 1.43°C/W, measured under JEDEC JESD51-14 conditions. This value reflects the thermal path from the silicon die through the package to the exposed drain pad (Pin 4), and is critical for calculating junction temperature rise when mounted on a properly designed PCB thermal pad. It does not include PCB or heatsink resistance.
NP60N03SUG-E1-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 135 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7500 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.2W (Ta), 105W (Tc)
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (MP-3ZK)
NP60N03SUG-E1-AY FAQ
1.How can I place an order for NP60N03SUG-E1-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for NP60N03SUG-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NP60N03SUG-E1-AY reliable?
The price and inventory of NP60N03SUG-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP60N03SUG-E1-AY is usually 5 days.
3.What payment methods are accepted for NP60N03SUG-E1-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP60N03SUG-E1-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NP60N03SUG-E1-AY?
NP60N03SUG-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NP60N03SUG-E1-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NP60N03SUG-E1-AY?
For technical support, including NP60N03SUG-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP60N03SUG-E1-AY requirements.
6.How does Aetrix verify that NP60N03SUG-E1-AY is sourced from the original manufacturer or authorized distributors?
All NP60N03SUG-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP60N03SUG-E1-AY meets industry standards.
7.What is the process for return or replacement of NP60N03SUG-E1-AY?
All NP60N03SUG-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP60N03SUG-E1-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NP60N03SUG-E1-AY part is unused and in its original packaging.
Return procedure for NP60N03SUG-E1-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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