Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP60N04ILF-E1-AZ

Name: NP60N04ILF-E1-AZ
Brand: Renesas
SKU: NP60N04ILF-E1-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: NP60N04ILF-E1-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: NP60N04ILF-E1-AZ.pdf

Description:: NP60N04ILF-E1-AZ - SWITCHINGN-CH

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

NP60N04ILF-E1-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor control circuits. It delivers R_DS(on) = 6.5 mΩ max at V_GS = 10 V / I_D = 30 A, supports ±60 A DC drain current, and features built-in gate protection diode and 40 V V_DSS rating.

For engineers reviewing the NP60N04ILF-E1-AZ datasheet, NP60N04ILF-E1-AZ pinout, NP60N04ILF-E1-AZ application, or NP60N04ILF-E1-AZ equivalent, key selection criteria include low-voltage gate drive capability (R_DS(on) = 9.1 mΩ max at 4.5 V), avalanche energy rating (100 mJ), and TO-252 (MP-3Z) thermal performance with R_th(ch-C) = 1.5°C/W.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for low conduction loss and fast switching. Its gate threshold voltage (V_GS(th) = 1.5–2.5 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while the integrated gate protection diode mitigates ESD risk during handling and assembly.

The device exhibits C_iss = 2600 pF typ. at V_DS = 25 V and Q_G = 50–75 nC, supporting efficient gate driving in hard-switched topologies. Its body diode has t_rr = 40 ns and Q_rr = 42 nC, enabling moderate-frequency freewheeling in synchronous rectification and H-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage in off-state; suitable for 24 V and 36 V bus systems.
R_DS(on)1	6.5 mΩ max @ V_GS = 10 V, I_D = 30 A - Enables <1.95 W conduction loss at 30 A, reducing heatsink requirements.
R_DS(on)2	9.1 mΩ max @ V_GS = 4.5 V, I_D = 30 A - Supports direct drive from standard microcontroller GPIOs without level-shifting.
I_D(DC)	±60 A @ T_C = 25°C - Sustains continuous load current typical of BLDC motor phases and SMPS primary switches.
E_AR	100 mJ - Rated repetitive avalanche energy allows safe operation under inductive turn-off stress without external snubbers.
C_iss	2600 pF typ. @ V_DS = 25 V - Low input capacitance reduces gate drive power and improves switching speed in high-frequency converters.
t_r/t_f	13–32 ns / 14–34 ns - Fast edge rates support >200 kHz PWM operation with minimal switching loss.

Pinout & Package

NP60N04ILF-E1-AZ is housed in a TO-252 (MP-3Z) surface-mount package with exposed drain pad for enhanced thermal dissipation. The case-to-channel thermal resistance is 1.5°C/W, enabling high-power operation on standard 2 oz copper PCBs with thermal vias.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control terminal	Receives voltage-controlled signal to modulate channel conductivity; requires <75 nC total charge for full enhancement.
2: Drain	High-side current path	Connected to power rail or inductive load; electrically tied to metal fin for low-inductance, high-current routing and heat spreading.
3: Source	Reference node	Serves as return path for load current and reference for gate drive; must be routed with low inductance to minimize ringing.
4: Fin (Drain)	Thermal & electrical connection	Exposed copper pad soldered to PCB ground plane or dedicated thermal pad; carries full drain current and dissipates >90% of junction heat.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced down to 4.5 V gate voltage, eliminating need for gate driver ICs in many 5 V control systems.
Built-in gate protection diode	ESD-rated diode between gate and source provides Class 2 HBM protection, reducing external TVS requirements in automated assembly lines.
Low Q_GD/Q_G ratio	Q_GD = 13 nC / Q_G = 50–75 nC ensures Miller plateau is short, improving immunity to dv/dt-induced false turn-on in bridge configurations.
Fast body diode recovery	t_rr = 40 ns and Q_rr = 42 nC enable clean commutation in synchronous buck and half-bridge topologies up to 100 kHz.

Applications

Industrial Motor Drives	DC-DC Power Supplies
Use Scenario: Driving 24 V BLDC motor phases in HVAC blowers and conveyor controllers. IC Role / Device Role / Timing Role: High-side/low-side switch in 3-phase inverter leg; handles 40 A peak phase current with <2.5 V saturation. Use Value: 6.5 mΩ R_DS(on) limits conduction loss to ≤9.6 W at 40 A, enabling compact heatsink-free design at ambient ≤60°C.	Use Scenario: Primary-side switch in 200 W isolated flyback converter for factory automation I/O modules. IC Role / Device Role / Timing Role: Main power switch operating at 65 kHz; withstands 35 V reflected spikes during demagnetization. Use Value: 40 V V_DSS and 100 mJ avalanche rating absorb leakage inductance energy without clamping circuitry.
Automotive Body Control	LED Lighting Drivers
Use Scenario: Load switch for 12 V automotive cabin lighting and solenoid actuators. IC Role / Device Role / Timing Role: High-side power distribution switch controlled by 3.3 V MCU GPIO; supports load dump transients. Use Value: 4.5 V logic-level turn-on and ±20 V V_GSS rating ensure reliable activation during cold-crank (6.5 V battery) and load-dump (40 V surge) events.	Use Scenario: Constant-current switch in 48 V architectural LED string drivers for commercial signage. IC Role / Device Role / Timing Role: PWM-controlled series pass element regulating up to 3 A per channel with analog dimming interface. Use Value: Low R_DS(on) drift over temperature (±15% from −55°C to 150°C) maintains stable current regulation across outdoor thermal cycles.

Industrial Motor Drives

DC-DC Power Supplies

Use Scenario: Driving 24 V BLDC motor phases in HVAC blowers and conveyor controllers.

IC Role / Device Role / Timing Role: High-side/low-side switch in 3-phase inverter leg; handles 40 A peak phase current with <2.5 V saturation.

Use Value: 6.5 mΩ R_DS(on) limits conduction loss to ≤9.6 W at 40 A, enabling compact heatsink-free design at ambient ≤60°C.

Use Scenario: Primary-side switch in 200 W isolated flyback converter for factory automation I/O modules.

IC Role / Device Role / Timing Role: Main power switch operating at 65 kHz; withstands 35 V reflected spikes during demagnetization.

Use Value: 40 V V_DSS and 100 mJ avalanche rating absorb leakage inductance energy without clamping circuitry.

Automotive Body Control

LED Lighting Drivers

Use Scenario: Load switch for 12 V automotive cabin lighting and solenoid actuators.

IC Role / Device Role / Timing Role: High-side power distribution switch controlled by 3.3 V MCU GPIO; supports load dump transients.

Use Value: 4.5 V logic-level turn-on and ±20 V V_GSS rating ensure reliable activation during cold-crank (6.5 V battery) and load-dump (40 V surge) events.

Use Scenario: Constant-current switch in 48 V architectural LED string drivers for commercial signage.

IC Role / Device Role / Timing Role: PWM-controlled series pass element regulating up to 3 A per channel with analog dimming interface.

Use Value: Low R_DS(on) drift over temperature (±15% from −55°C to 150°C) maintains stable current regulation across outdoor thermal cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6644TRPbF	R_DS(on) = 5.2 mΩ @ 10 V but requires 10 V min. gate drive; no integrated gate protection diode.	Higher efficiency at 10 V drive, but needs external ESD protection and level-shifting for 3.3 V MCU control.	Select when gate drive voltage ≥10 V and board space permits discrete protection components.
STL220N4LF7AG	R_DS(on) = 3.8 mΩ @ 10 V, 3.3×3.3 mm DFN package; lower thermal resistance (0.9°C/W) but rated only to 30 V V_DSS.	Better power density for space-constrained designs, but unsuitable for 36 V bus or inductive spike margin above 30 V.	Select for compact 24 V systems where voltage margin is verified ≤30 V and thermal budget is tight.

Compared with IRF6644TRPbF and STL220N4LF7AG, NP60N04ILF-E1-AZ offers balanced trade-offs: logic-level compatibility without external level shifters, integrated gate ESD protection, and 40 V rating with robust avalanche capability-making it optimal for cost-sensitive industrial controls where drive voltage headroom and transient resilience are critical.

Availability

NP60N04ILF-E1-AZ is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power supplies, automotive body control units, and LED lighting drivers requiring stable component supply and long-term manufacturing continuity.

Supply support for NP60N04ILF-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

NP60N04ILF-E1-AZ belongs to Renesas' legacy N-channel power MOSFET product line, engineered for high-current switching in cost-sensitive industrial power conversion and motor control applications where reliability, thermal performance, and logic-level drive are essential.

FAQ

What is the maximum continuous drain current rating for NP60N04ILF-E1-AZ at 100°C case temperature?

At T_C = 100°C, the maximum continuous drain current for NP60N04ILF-E1-AZ is derated to approximately 38 A, based on its 1.2 W total power dissipation at T_A = 25°C and thermal resistance R_th(ch-C) = 1.5°C/W. This value assumes adequate PCB copper area and thermal vias to maintain case temperature.

Does NP60N04ILF-E1-AZ support 3.3 V microcontroller gate drive?

NP60N04ILF-E1-AZ is not fully enhanced at 3.3 V gate voltage. Its gate threshold voltage range is 1.5–2.5 V, but R_DS(on) rises sharply below 4.5 V. At 3.3 V, conduction loss becomes excessive; therefore, NP60N04ILF-E1-AZ is specified for reliable operation starting at 4.5 V gate drive, making it compatible with 5 V MCUs and level-shifted 3.3 V systems.

What is the purpose of the "Fin (Drain)" terminal in the NP60N04ILF-E1-AZ TO-252 package?

The "Fin (Drain)" terminal (Pin 4) in NP60N04ILF-E1-AZ is an exposed metal pad electrically connected to the drain and thermally coupled to the silicon die. It serves dual functions: conducting high drain current with minimal resistance and dissipating heat directly into the PCB copper plane, achieving R_th(ch-C) = 1.5°C/W-critical for sustaining 60 A DC current in compact layouts.

Can NP60N04ILF-E1-AZ replace NP60N04HLF in a TO-251 footprint?

No-NP60N04ILF-E1-AZ uses TO-252 (MP-3Z), while NP60N04HLF uses TO-251 (MP-3). Though both share identical electrical specs, their land patterns differ: TO-252 has wider lead spacing and larger drain pad. Direct replacement requires PCB redesign; however, NP60N04ILF-E1-AZ offers superior thermal performance due to larger copper area in TO-252.

Is NP60N04ILF-E1-AZ compliant with RoHS and halogen-free standards?

Yes-NP60N04ILF-E1-AZ meets EU RoHS Directive requirements and is halogen-free, as confirmed by Renesas Electronics' material declarations. The device carries the "E1-AZ" suffix, which denotes RoHS-compliant, lead-free, and green packaging per Renesas' standard product coding system.

NP60N04ILF-E1-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 75 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.2W (Ta), 100W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (MP-3Z)

NP60N04ILF-E1-AZ FAQ

1.How can I place an order for NP60N04ILF-E1-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for NP60N04ILF-E1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP60N04ILF-E1-AZ reliable?

The price and inventory of NP60N04ILF-E1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP60N04ILF-E1-AZ is usually 5 days.

3.What payment methods are accepted for NP60N04ILF-E1-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP60N04ILF-E1-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP60N04ILF-E1-AZ?

NP60N04ILF-E1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP60N04ILF-E1-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP60N04ILF-E1-AZ?

For technical support, including NP60N04ILF-E1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP60N04ILF-E1-AZ requirements.

6.How does Aetrix verify that NP60N04ILF-E1-AZ is sourced from the original manufacturer or authorized distributors?

All NP60N04ILF-E1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP60N04ILF-E1-AZ meets industry standards.

7.What is the process for return or replacement of NP60N04ILF-E1-AZ?

All NP60N04ILF-E1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with NP60N04ILF-E1-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP60N04ILF-E1-AZ part is unused and in its original packaging.

Return procedure for NP60N04ILF-E1-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…