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Renesas NP60N04KUG-E1-AY
- Part No.:
- NP60N04KUG-E1-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
NP60N04KUG-E1-AY.pdf
- Description:
- MOSFET N-CH 40V 60A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:8,685
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Product details
Overview
NP60N04KUG-E1-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor drive half-bridges. It delivers 60 A DC drain current, 40 V drain-source breakdown voltage, and ultra-low 6.1 mΩ RDS(on) at VGS = 10 V, enabling efficient 12–24 V system-level power conversion.
For engineers reviewing the NP60N04KUG-E1-AY datasheet, NP60N04KUG-E1-AY pinout, NP60N04KUG-E1-AY application, or NP60N04KUG-E1-AY equivalent, key selection criteria include avalanche energy rating (90 mJ), channel temperature limit (175°C), gate charge (95 nC), and TO-263 package thermal resistance (Rth(ch-C) = 1.71°C/W).
Technical Context
This device employs a planar vertical DMOS structure optimized for low conduction loss and fast switching in hard-switched topologies. Its 3400 pF typical input capacitance (Ciss) and 20 nC gate-to-drain charge (QGD) support gate-drive design for <66 ns turn-on delay and <30 ns fall time under 30 A load conditions.
The integrated body diode exhibits 1.5 V max forward voltage at 60 A and 37 ns reverse recovery time with 100 A/µs di/dt - critical for synchronous rectification and freewheeling in brushed DC motor controllers and DC-DC converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - supports 24 V nominal bus systems with 66% derating margin against transients |
| RDS(on) max | 6.1 mΩ at VGS = 10 V, ID = 30 A - enables ≤1.1 W conduction loss at 40 A continuous operation |
| ID(DC) | ±60 A at TC = 25°C - requires heatsinking to maintain case temperature ≤100°C in sustained loads |
| EAR | 90 mJ repetitive avalanche energy - allows unclamped inductive switching without external snubbers in relay drivers |
| QG | 95 nC total gate charge - determines minimum gate driver peak current (≥2 A) for <100 ns switching transitions |
| Tch max | 175°C - permits operation in sealed enclosures or high ambient environments up to 125°C with proper thermal design |
| Ciss | 3400 pF typical - sets Miller plateau duration and influences gate drive loop stability in high-frequency PWM |
Pinout & Package
NP60N04KUG-E1-AY is housed in a surface-mount TO-263 (MP-25ZK) package with exposed drain tab for direct thermal coupling to PCB copper or heatsink. The 4-pin layout provides isolated gate control and high-current source/drain paths.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives 10 V logic-level gate drive; threshold voltage 2.0–4.0 V ensures compatibility with 3.3 V and 5 V microcontrollers |
| 2 (Drain) | High-side power terminal | Connected to main power rail; electrically tied to metal tab for low-inductance heat path and EMI reduction |
| 3 (Source) | Power return reference | Serves as local ground reference for gate driver; must be routed with minimal inductance to avoid shoot-through risk |
| 4 (Fin / Drain) | Thermal & electrical drain extension | Exposed copper tab - soldered directly to PCB thermal pad; contributes >80% of total heat dissipation capability |
Key Features
| Feature | Design Value |
|---|---|
| 175°C channel rating | Enables operation in automotive engine-bay adjacent modules and industrial inverters without derating at 125°C ambient |
| 6.1 mΩ RDS(on) | Reduces conduction losses by ≥35% vs. legacy 10 mΩ MOSFETs in 48 V telecom PSUs, improving full-load efficiency to >95% |
| 90 mJ avalanche energy | Eliminates need for external clamping diodes in solenoid drivers and H-bridge motor controls with inductive kickback |
| 37 ns reverse recovery | Minimizes diode switching loss and voltage overshoot during commutation in synchronous buck converters operating at 200–500 kHz |
| TO-263 thermal resistance | Rth(ch-C) = 1.71°C/W enables 70 W power dissipation with 120°C ΔT - achievable using 2 oz. copper + thermal vias under drain tab |
Applications
| Industrial Motor Drive | Telecom Power Supply |
|---|---|
|
Use Scenario: Half-bridge leg in 24 V brushed DC motor controller for automated warehouse conveyors. IC Role / Device Role / Timing Role: High-side switching element handling 45 A peak current during acceleration; switches at 20 kHz PWM frequency. Use Value: Low RDS(on) reduces I²R heating during stall conditions; 175°C rating prevents thermal shutdown during extended duty cycles. |
Use Scenario: Primary-side synchronous rectifier in 48 V input, 12 V output telecom DC-DC module. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode; driven by transformer-coupled gate signal. Use Value: 37 ns trr and low Qrr cut switching loss by 60% vs. discrete diode solution, enabling 94% efficiency at 500 W load. |
| EV Charging Interface | Programmable Load Bank |
|
Use Scenario: Isolation switch between AC/DC converter output and battery management system in Level 2 EVSE. IC Role / Device Role / Timing Role: DC contactor replacement; conducts 60 A continuously with zero-voltage turn-on sequencing. Use Value: 90 mJ avalanche rating absorbs inrush energy from capacitive battery inputs without failure during hot-plug events. |
Use Scenario: Active load element in programmable electronic load for testing 24 V/48 V power supplies. IC Role / Device Role / Timing Role: Constant-current sink controlled via analog voltage; dissipates up to 88 W with forced air cooling. Use Value: Rth(ch-A) = 83.3°C/W allows stable 60 A DC operation on standard FR4 with 4-layer thermal stackup and no heatsink. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | RDS(on) = 4 mΩ (lower), but Tch = 175°C same; Ciss = 3200 pF; TO-220 package | Requires through-hole assembly and larger heatsink due to higher Rth(ch-A); unsuitable for space-constrained SMT designs | Select when lowest possible conduction loss is prioritized over board area and thermal interface simplicity |
| STP60NF06 | RDS(on) = 8 mΩ (higher); Tch = 150°C; QG = 105 nC; TO-220FP package | Limited to 100°C ambient without active cooling; slower switching increases loss in >100 kHz designs | Acceptable for cost-sensitive 24 V fan controllers where 175°C rating and fast recovery are non-critical |
Compared with IRF1404PBF and STP60NF06, NP60N04KUG-E1-AY offers superior thermal performance in SMT form factor, tighter RDS(on) tolerance (4.8–6.1 mΩ), and guaranteed 90 mJ avalanche capability - making it optimal for compact, high-reliability industrial power stages.
Availability
NP60N04KUG-E1-AY is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and EV charging interfaces requiring stable component supply across multi-year production cycles.
Supply support for NP60N04KUG-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
NP60N04KUG-E1-AY belongs to Renesas' legacy power MOSFET portfolio targeting high-efficiency, high-reliability DC switching in industrial automation and power conversion systems.
FAQ
What is the maximum continuous drain current rating for NP60N04KUG-E1-AY at 100°C case temperature?
At TC = 100°C, the maximum continuous drain current for NP60N04KUG-E1-AY is derated to approximately 42 A, based on the linear derating curve from 60 A at 25°C and 0 A at 175°C. This value is confirmed in the "Total Power Dissipation vs. Case Temperature" graph on page 3 of the D16861EJ3V0DS datasheet. Operating NP60N04KUG-E1-AY within this limit ensures long-term reliability under sustained thermal stress.
Does NP60N04KUG-E1-AY support logic-level gate drive from a 3.3 V microcontroller?
No - NP60N04KUG-E1-AY has a gate threshold voltage range of 2.0–4.0 V and requires ≥10 V gate-source voltage to achieve its specified 6.1 mΩ RDS(on). A 3.3 V signal cannot fully enhance the channel; using it would result in excessive conduction loss and thermal runaway. NP60N04KUG-E1-AY must be driven with a dedicated gate driver or level-shifter supplying 10–20 V to ensure safe and efficient operation.
Can NP60N04KUG-E1-AY replace a TO-220 MOSFET in an existing PCB layout?
No - NP60N04KUG-E1-AY uses a TO-263 (MP-25ZK) surface-mount package with different footprint, thermal pad, and pinout than TO-220 devices. Its drain tab occupies the entire bottom side and requires a dedicated thermal land pattern. Direct replacement would necessitate PCB redesign, including new solder mask openings, thermal via placement, and trace width adjustments to handle 60 A current.
What is the body diode's reverse recovery charge (Qrr) specification for NP60N04KUG-E1-AY?
The body diode reverse recovery charge for NP60N04KUG-E1-AY is 40 nC, measured at IF = 60 A, di/dt = 100 A/µs, and VGS = 0 V per the Electrical Characteristics table on page 2 of the datasheet. This low Qrr minimizes switching loss and voltage spikes during freewheeling in synchronous rectifiers and H-bridge configurations using NP60N04KUG-E1-AY.
Is NP60N04KUG-E1-AY compliant with RoHS and halogen-free standards?
Yes - NP60N04KUG-E1-AY meets EU RoHS Directive requirements and is manufactured as a halogen-free product, consistent with Renesas Electronics' environmental compliance policy stated in the datasheet notice section. The "E1-AY" suffix denotes tape-and-reel packaging compliant with J-STD-020 moisture sensitivity level 3 (MSL3), suitable for standard SMT reflow processes.
NP60N04KUG-E1-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 6.1mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 95 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5100 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta), 88W (Tc)
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263
NP60N04KUG-E1-AY FAQ
1.How can I place an order for NP60N04KUG-E1-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for NP60N04KUG-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NP60N04KUG-E1-AY reliable?
The price and inventory of NP60N04KUG-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP60N04KUG-E1-AY is usually 5 days.
3.What payment methods are accepted for NP60N04KUG-E1-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP60N04KUG-E1-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NP60N04KUG-E1-AY?
NP60N04KUG-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NP60N04KUG-E1-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NP60N04KUG-E1-AY?
For technical support, including NP60N04KUG-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP60N04KUG-E1-AY requirements.
6.How does Aetrix verify that NP60N04KUG-E1-AY is sourced from the original manufacturer or authorized distributors?
All NP60N04KUG-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP60N04KUG-E1-AY meets industry standards.
7.What is the process for return or replacement of NP60N04KUG-E1-AY?
All NP60N04KUG-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP60N04KUG-E1-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NP60N04KUG-E1-AY part is unused and in its original packaging.
Return procedure for NP60N04KUG-E1-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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