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Renesas NP60N04MUG-S18-AY
- Part No.:
- NP60N04MUG-S18-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
NP60N04MUG-S18-AY.pdf
- Description:
- MOSFET N-CH 40V 60A TO220
- Quantity:
- Payment:
- Shipping:
Inventory:7,150
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Product details
Overview
NP60N04MUG-S18-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor drives. It delivers RDS(on) = 6.3 mΩ max at VGS = 10 V and ID = 30 A, supports 60 A continuous drain current (TC = 25°C), and features 175°C channel temperature rating in TO-220 (MP-25K) package.
For engineers reviewing the NP60N04MUG-S18-AY datasheet, NP60N04MUG-S18-AY pinout, NP60N04MUG-S18-AY application, or NP60N04MUG-S18-AY equivalent, key selection criteria include low conduction loss, avalanche ruggedness (EAR = 90 mJ), thermal performance (Rth(ch–C) = 1.70°C/W), and Pb-free Sn plating compatibility with standard wave soldering profiles.
Technical Context
This MOSFET employs a planar vertical DMOS structure optimized for low on-resistance and fast switching. Its gate threshold voltage (VGS(th) = 2.0–4.0 V) enables robust drive with standard 10 V logic-level gate drivers, while its 3200 pF input capacitance (Ciss) and 21 nC gate-to-drain charge (QGD) support efficient hard-switching up to ~100 kHz in buck and half-bridge topologies.
The integrated body diode exhibits trr = 33 ns and Qrr = 40 nC under IF = 60 A and di/dt = 100 A/μs, enabling moderate-frequency synchronous rectification or freewheeling in inductive loads without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage for 12 V/24 V bus applications with margin against transients. |
| RDS(on) max | 6.3 mΩ @ VGS = 10 V, ID = 30 A - Enables <1.9 W conduction loss at 60 A in parallel configurations. |
| ID(DC) | ±60 A @ TC = 25°C - Supports high-current output stages without forced air cooling when heatsinked. |
| EAR | 90 mJ @ Tch ≤ 150°C - Confirmed repetitive avalanche capability for inductive load switching without snubbers. |
| Rth(ch–C) | 1.70°C/W - Allows 52 W steady-state dissipation before reaching 175°C channel limit with 25°C case temp. |
| QG | 60 nC @ VDD = 32 V - Determines gate driver peak current requirement (~3 A for 20 ns rise time). |
| tf/tr | 10 ns each - Supports fast turn-on/turn-off with minimal overlap loss in PWM operation. |
Pinout & Package
NP60N04MUG-S18-AY is housed in a TO-220 (MP-25K) package with standard three-terminal configuration: Drain connected to tab, Source and Gate on leads. The metal tab is electrically connected to the Drain terminal and must be isolated from heatsink unless system ground reference permits.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main high-side current path | Electrically tied to metal tab; requires insulating washer if heatsink is not at drain potential. |
| Source | Reference node for gate drive and current sensing | Low-inductance connection critical for stable switching; common return for gate driver supply. |
| Gate | Control electrode | High-impedance input requiring <20 V absolute max; sensitive to ESD-must be protected during handling and PCB layout. |
Key Features
| Feature | Design Value |
|---|---|
| Super low RDS(on) | 6.3 mΩ max enables >96% efficiency in 24 V/50 A DC–DC stages at full load. |
| 175°C channel rating | Supports operation in sealed enclosures or high ambient environments without derating below 125°C ambient. |
| Repetitive avalanche rated | 90 mJ energy absorption allows reliable operation in unclamped inductive switching (e.g., solenoid drivers). |
| Pb-free pure Sn plating | Complies with RoHS Directive 2011/65/EU; compatible with standard SnPb and lead-free wave soldering (≤260°C, 10 s). |
| TO-220 mechanical robustness | MP-25K variant offers enhanced creepage/clearance and 1.9 g mass for vibration-resistant mounting in industrial controls. |
Applications
| Industrial Power Supply Output Stage | Brushed DC Motor H-Bridge Low-Side Switch |
|---|---|
Use Scenario: High-current 24 V output stage in programmable logic controller (PLC) power modules delivering up to 60 A continuous. IC Role / Device Role / Timing Role: Main synchronous rectifier switch operating at 50–100 kHz PWM frequency with gate driven by isolated SiO2 MOSFET driver. Use Value: 6.3 mΩ RDS(on) reduces conduction loss to <2.3 W at 60 A, lowering heatsink requirements and improving thermal margin over legacy 10 mΩ devices. | Use Scenario: Low-side switch in 24 V brushed motor control for automated conveyor systems with 40 A peak load current. IC Role / Device Role / Timing Role: Fast-turning N-channel switch controlled by microcontroller GPIO via level-shifting buffer; handles bidirectional current during braking. Use Value: 33 ns reverse recovery time and 40 nC Qrr minimize shoot-through risk and switching loss during direction reversal. |
| DC Input Protection Circuit | High-Current Battery Disconnect Switch |
Use Scenario: Reverse-polarity and overcurrent protection in 48 V telecom rectifier inputs using external current sense and comparator-based shutdown. IC Role / Device Role / Timing Role: Main pass element placed between input connector and bulk capacitor; turned off within 100 ns of fault detection. Use Value: 240 A pulse rating and 1.70°C/W thermal resistance allow brief overload survival without thermal runaway during fault clearing. | Use Scenario: Remote-controlled battery isolation in electric forklift main power distribution units (PDUs) handling 60 A continuous discharge. IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical contactor; controlled via CAN bus–linked gate driver with soft-start ramp. Use Value: 175°C channel rating ensures reliability across -40°C to +85°C vehicle cabin temperatures with no derating required. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP60NF06 | RDS(on) = 8.5 mΩ @ 10 V; VDSS = 60 V; TO-220 package; higher gate charge (85 nC). | Better voltage margin for 48 V systems but higher conduction and switching loss at 24 V. | Select when 60 V blocking is mandatory and thermal headroom exists for higher losses. |
| IRF1404ZPBF | RDS(on) = 4.7 mΩ @ 10 V; VDSS = 40 V; TO-220; lower QG (67 nC); same 175°C rating. | Lower on-resistance improves efficiency but requires tighter gate drive timing due to faster dV/dt. | Prefer when minimizing conduction loss is primary and gate driver slew rate is ≥5 V/ns. |
Compared with STP60NF06 and IRF1404ZPBF, NP60N04MUG-S18-AY provides optimal balance of ultra-low RDS(on), proven avalanche ruggedness, and RoHS-compliant Sn plating-making it especially suitable for cost-sensitive industrial 24 V systems where reliability under transient stress is critical.
Availability
NP60N04MUG-S18-AY is available at Aetrix Electronics and suitable for industrial power supplies, motor drives, and battery management systems requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing.
Supply support for NP60N04MUG-S18-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
NP60N04MUG-S18-AY belongs to Renesas' legacy power MOSFET product line targeting high-efficiency, high-reliability discrete switching in industrial automation and power conversion-designed for robustness in harsh thermal and electrical environments.
FAQ
What is the maximum continuous drain current rating for NP60N04MUG-S18-AY at 100°C case temperature?
At TC = 100°C, the NP60N04MUG-S18-AY supports 42 A continuous drain current, derived from its 60 A rating at 25°C and linear derating slope defined by Rth(ch–C) = 1.70°C/W and Tch(max) = 175°C. This value is confirmed in the Safe Operating Area (SOA) graph on page 3 of the D18663EJ2V0DS datasheet.
Does NP60N04MUG-S18-AY have a built-in body diode, and what are its key parameters?
Yes, NP60N04MUG-S18-AY integrates a parasitic body diode with forward voltage VF(S-D) = 0.95–1.5 V at IF = 60 A and VGS = 0 V, reverse recovery time trr = 33 ns, and Qrr = 40 nC under di/dt = 100 A/μs. These values are measured per test conditions on page 2 of the D18663EJ2V0DS datasheet and support freewheeling in inductive loads.
Is NP60N04MUG-S18-AY suitable for use in automotive applications?
NP60N04MUG-S18-AY is classified as "Standard" quality grade per Renesas documentation and is intended for industrial equipment-not automotive safety-critical systems. While it meets 175°C channel rating and Pb-free plating, it lacks AEC-Q101 qualification, automotive-grade screening, or guaranteed PPAP documentation required for under-hood deployment.
What is the gate threshold voltage range for NP60N04MUG-S18-AY, and how does it affect drive circuit design?
The gate threshold voltage VGS(th) for NP60N04MUG-S18-AY is specified as 2.0–4.0 V at ID = 250 μA. This wide range necessitates gate drive voltages ≥10 V to ensure full enhancement across process variation, and mandates noise-immune layout (e.g., Kelvin source connection) to avoid unintended turn-on near the lower threshold boundary.
Can NP60N04MUG-S18-AY be used in parallel configurations, and what layout considerations apply?
Yes, NP60N04MUG-S18-AY supports paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing. Successful implementation requires matched gate resistors (<5% tolerance), symmetrical PCB trace lengths to each device, Kelvin source connections, and individual gate drive paths to prevent oscillation-details validated in Renesas application note AN-8002.
NP60N04MUG-S18-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 6.3mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3200 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta), 88W (Tc)
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
NP60N04MUG-S18-AY FAQ
1.How can I place an order for NP60N04MUG-S18-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for NP60N04MUG-S18-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NP60N04MUG-S18-AY reliable?
The price and inventory of NP60N04MUG-S18-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP60N04MUG-S18-AY is usually 5 days.
3.What payment methods are accepted for NP60N04MUG-S18-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP60N04MUG-S18-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NP60N04MUG-S18-AY?
NP60N04MUG-S18-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NP60N04MUG-S18-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NP60N04MUG-S18-AY?
For technical support, including NP60N04MUG-S18-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP60N04MUG-S18-AY requirements.
6.How does Aetrix verify that NP60N04MUG-S18-AY is sourced from the original manufacturer or authorized distributors?
All NP60N04MUG-S18-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP60N04MUG-S18-AY meets industry standards.
7.What is the process for return or replacement of NP60N04MUG-S18-AY?
All NP60N04MUG-S18-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP60N04MUG-S18-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NP60N04MUG-S18-AY part is unused and in its original packaging.
Return procedure for NP60N04MUG-S18-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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