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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP60N06PDK-E1-AY

Name: NP60N06PDK-E1-AY
Brand: Renesas
SKU: NP60N06PDK-E1-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP60N06PDK-E1-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: NP60N06PDK-E1-AY.pdf

Description:: MOSFET TRANSISTOR MORE 1 W

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Product details

Overview

NP60N06PDK-E1-AY from Renesas Electronics is an AEC-Q101 qualified N-channel power MOSFET in TO-263(MP-25ZP) package, rated for 60 V V_DSS, 60 A I_D(DC), and R_DS(on) = 7.9 mΩ (V_GS = 10 V, I_D = 30 A), designed for high-current automotive switching applications including motor control and DC-DC conversion.

For engineers reviewing the NP60N06PDK-E1-AY datasheet, NP60N06PDK-E1-AY pinout, NP60N06PDK-E1-AY application, or NP60N06PDK-E1-AY equivalent, key selection criteria include its low R_DS(on), AEC-Q101 qualification, 240 A pulsed drain current capability, thermal resistance of 1.43 °C/W (ch-to-case), and suitability for under-hood automotive power stages requiring robust avalanche performance (E_AR = 63 mJ).

Technical Context

This MOSFET employs a planar trench-gate structure optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its gate threshold voltage (V_GS(th) = 1.5–2.5 V) enables reliable turn-on with standard logic-level drivers, while C_iss = 2400 pF (typ.) and Q_G = 37–56 nC support efficient gate drive design at frequencies up to several hundred kHz.

The device integrates a body diode with V_F(S-D) = 0.9–1.5 V (I_F = 60 A) and t_rr = 32 ns, enabling synchronous rectification and freewheeling in buck converters and H-bridge motor drives. Its channel temperature rating of 175 °C and R_th(ch-C) = 1.43 °C/W allow sustained operation under high-power pulse conditions without derating when mounted on adequately sized copper areas.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Withstands up to 60 V drain-source voltage, suitable for 48 V automotive bus and 24 V battery systems with margin.
I_D(DC)	60 A - Continuous drain current at T_C = 25 °C supports high-power loads like radiator fans or seat motors without external heatsink.
R_DS(on)1	7.9 mΩ max - Low conduction loss reduces I²R heating in 30 A steady-state applications, improving efficiency by >1.5% vs. 12 mΩ alternatives.
Q_G	37–56 nC - Gate charge determines driver strength requirement; compatible with common automotive gate drivers (e.g., Renesas ISL784xx series).
E_AR	63 mJ - Repetitive avalanche energy rating ensures survivability during inductive load switching transients in motor control circuits.
T_ch	175 °C - Maximum channel temperature allows operation in under-hood environments where ambient exceeds 125 °C.
C_iss	2400 pF typ. - Input capacitance impacts switching speed and EMI; enables <40 ns turn-on delay with zero-ohm gate resistor.

Pinout & Package

Package: TO-263(MP-25ZP), surface-mount, 3-terminal, exposed drain pad for thermal and electrical connection. Outline conforms to Renesas package code PRSS0004AL-A.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path from source to load	Connected to large copper area via exposed pad; carries full load current and dissipates heat directly to PCB.
Gate (G)	Control terminal for channel conduction	High-impedance input requiring ESD protection; driven by 10 V logic signal to achieve specified R_DS(on).
Source (S)	Reference node for gate drive and current return	Common reference for gate driver supply; must be low-inductance connection to minimize switching noise and oscillation.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test requirements including HTGB, HTRB, and temperature cycling - enables deployment in engine control and ADAS modules.
Low R_DS(on) at 4.5 V	R_DS(on)2 = 7.0–12.0 mΩ (V_GS = 4.5 V, I_D = 15 A) - supports partial-gate-drive operation in low-voltage fault conditions or with 5 V microcontrollers.
Fast switching	t_d(on) = 18–40 ns, t_f = 3–10 ns - minimizes switching losses in high-frequency DC-DC converters operating above 200 kHz.
Robust body diode	V_F(S-D) = 0.9–1.5 V, t_rr = 32 ns - reduces freewheeling loss and EMI in half-bridge configurations compared to discrete diode solutions.
Thermal performance	R_th(ch-C) = 1.43 °C/W - enables >90 W continuous power dissipation with 10 cm² 2-oz copper pad, eliminating need for bolt-down heatsinks.

Applications

Electric Power Steering (EPS)	Automotive DC-DC Converter
Use Scenario: High-side switching in three-phase inverter driving EPS assist motor under 12 V battery supply with peak currents up to 180 A. IC Role / Device Role / Timing Role: Main power switch handling bidirectional current flow and regenerative braking energy recovery. Use Value: Low R_DS(on) and high I_D(pulse) = 240 A ensure torque responsiveness and thermal stability during transient steering loads.	Use Scenario: Synchronous rectifier in 48 V-to-12 V buck converter supplying infotainment and ADAS ECUs. IC Role / Device Role / Timing Role: Low-side switch conducting continuous 40 A output current with minimal conduction loss. Use Value: 7.9 mΩ R_DS(on) reduces rectifier loss by 40% versus 13 mΩ alternatives, improving system efficiency from 92% to 94.5%.
Engine Cooling Fan Control	Start-Stop System Solenoid Driver
Use Scenario: PWM-controlled high-current fan driver operating continuously at 55 °C ambient with 60 A stall current. IC Role / Device Role / Timing Role: Single-ended switch interfacing MCU PWM output to brushed DC fan motor. Use Value: 175 °C channel rating and 1.43 °C/W thermal resistance prevent thermal shutdown during prolonged high-load operation.	Use Scenario: Solenoid actuation in 12 V start-stop system requiring 50 ms, 60 A pulses with fast turn-off to prevent gear clash. IC Role / Device Role / Timing Role: High-current switch controlling solenoid coil with precise timing and minimal tail current. Use Value: 32 ns reverse recovery time and 10 ns fall time enable clean, jitter-free de-energization critical for mechanical synchronization.

Electric Power Steering (EPS)

Automotive DC-DC Converter

Use Scenario: High-side switching in three-phase inverter driving EPS assist motor under 12 V battery supply with peak currents up to 180 A.

IC Role / Device Role / Timing Role: Main power switch handling bidirectional current flow and regenerative braking energy recovery.

Use Value: Low R_DS(on) and high I_D(pulse) = 240 A ensure torque responsiveness and thermal stability during transient steering loads.

Use Scenario: Synchronous rectifier in 48 V-to-12 V buck converter supplying infotainment and ADAS ECUs.

IC Role / Device Role / Timing Role: Low-side switch conducting continuous 40 A output current with minimal conduction loss.

Use Value: 7.9 mΩ R_DS(on) reduces rectifier loss by 40% versus 13 mΩ alternatives, improving system efficiency from 92% to 94.5%.

Engine Cooling Fan Control

Start-Stop System Solenoid Driver

Use Scenario: PWM-controlled high-current fan driver operating continuously at 55 °C ambient with 60 A stall current.

IC Role / Device Role / Timing Role: Single-ended switch interfacing MCU PWM output to brushed DC fan motor.

Use Value: 175 °C channel rating and 1.43 °C/W thermal resistance prevent thermal shutdown during prolonged high-load operation.

Use Scenario: Solenoid actuation in 12 V start-stop system requiring 50 ms, 60 A pulses with fast turn-off to prevent gear clash.

IC Role / Device Role / Timing Role: High-current switch controlling solenoid coil with precise timing and minimal tail current.

Use Value: 32 ns reverse recovery time and 10 ns fall time enable clean, jitter-free de-energization critical for mechanical synchronization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 1.6 mΩ @ 10 V (lower), but V_DSS = 60 V same; TO-263 package; not AEC-Q101 qualified.	Suitable for industrial DC-DC where automotive qualification is not required; higher current density demands tighter layout control.	Select when maximum efficiency at 40+ A is prioritized over automotive compliance and long-term reliability validation.
IRF1405PbF	R_DS(on) = 5.3 mΩ @ 10 V (lower), V_DSS = 55 V (lower); TO-220 package; no AEC-Q101 qualification.	Limited to 12 V automotive accessories due to lower V_DSS; through-hole mounting increases thermal resistance vs. TO-263.	Choose for cost-sensitive non-safety-critical applications where board space and thermal performance are secondary to BOM cost.

Compared with STL220N6F7 and IRF1405PbF, NP60N06PDK-E1-AY trades marginal R_DS(on) increase for guaranteed AEC-Q101 qualification, superior thermal resistance (1.43 vs. ≥2.5 °C/W), and validated avalanche ruggedness - making it the preferred choice for safety-relevant automotive power stages.

Availability

NP60N06PDK-E1-AY is available at Aetrix Electronics and suitable for electric power steering, automotive DC-DC conversion, and engine cooling fan control requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for NP60N06PDK-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.

NP60N06PDK belongs to Renesas' AEC-Q101-qualified power MOSFET product line, engineered specifically for high-reliability automotive power switching - including motor drives, battery management, and voltage regulation subsystems.

FAQ

What is the maximum continuous drain current rating for NP60N06PDK-E1-AY at case temperature of 100°C?

At T_C = 100 °C, the maximum continuous drain current for NP60N06PDK-E1-AY is derated to approximately 42 A, based on the linear derating curve from 60 A at 25 °C and thermal resistance R_th(ch-C) = 1.43 °C/W. This value ensures safe operation within the 175 °C channel temperature limit and accounts for typical PCB thermal interface conditions.

Is NP60N06PDK-E1-AY suitable for synchronous rectification in a 48 V automotive buck converter?

Yes, NP60N06PDK-E1-AY is suitable for synchronous rectification in 48 V automotive buck converters. Its R_DS(on) = 7.9 mΩ at 10 V gate drive, low Q_GD/Q_G ratio (≈0.14), and fast t_f = 3–10 ns enable high-efficiency, low-loss operation at switching frequencies up to 500 kHz, meeting stringent efficiency targets for modern vehicle power architectures.

Does NP60N06PDK-E1-AY have integrated ESD protection on the gate terminal?

NP60N06PDK-E1-AY does not integrate on-die ESD protection circuitry. The datasheet explicitly warns that "strong electric field… can cause destruction of the gate oxide," requiring external handling precautions including grounded workstations, ionizers, and gate-series resistors. Designers must implement discrete TVS or RC snubbers at the gate input to prevent electrostatic damage during assembly and operation.

What is the gate threshold voltage range for NP60N06PDK-E1-AY, and how does it affect drive compatibility?

The gate threshold voltage V_GS(th) for NP60N06PDK-E1-AY is 1.5–2.5 V (min–max) at I_D = 250 µA. This range ensures reliable turn-on with standard 3.3 V or 5 V logic outputs, while maintaining sufficient noise margin against spurious turn-on in noisy automotive environments. It also supports partial-gate-drive operation down to 4.5 V without significant R_DS(on) penalty.

How does the repetitive avalanche rating of NP60N06PDK-E1-AY support motor control applications?

The repetitive avalanche rating of NP60N06PDK-E1-AY - E_AR = 63 mJ and I_AR = 25 A - provides built-in protection against inductive kickback during abrupt current interruption in motor control. This eliminates the need for external clamping diodes in H-bridge or half-bridge topologies, reducing BOM count and PCB area while ensuring robust operation during PWM dead-time transitions and fault events.

NP60N06PDK-E1-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 60A

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 105W

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263-3

NP60N06PDK-E1-AY FAQ

1.How can I place an order for NP60N06PDK-E1-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP60N06PDK-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP60N06PDK-E1-AY reliable?

The price and inventory of NP60N06PDK-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP60N06PDK-E1-AY is usually 5 days.

3.What payment methods are accepted for NP60N06PDK-E1-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP60N06PDK-E1-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP60N06PDK-E1-AY?

NP60N06PDK-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP60N06PDK-E1-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP60N06PDK-E1-AY?

For technical support, including NP60N06PDK-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP60N06PDK-E1-AY requirements.

6.How does Aetrix verify that NP60N06PDK-E1-AY is sourced from the original manufacturer or authorized distributors?

All NP60N06PDK-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP60N06PDK-E1-AY meets industry standards.

7.What is the process for return or replacement of NP60N06PDK-E1-AY?

All NP60N06PDK-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP60N06PDK-E1-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP60N06PDK-E1-AY part is unused and in its original packaging.

Return procedure for NP60N06PDK-E1-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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