My Inquiry
My Account
Renesas NP80N03MLE-S18-AY
- Part No.:
- NP80N03MLE-S18-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
NP80N03MLE-S18-AY.pdf
- Description:
- MOSFET N-CH 30V 80A TO220
- Quantity:
- Payment:
- Shipping:
Inventory:300
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NP80N03MLE-S18-AY from Renesas Electronics is an N-channel power MOSFET in TO-220 (MP-25K) package, rated for 30 V VDSS, 80 A DC drain current, and 7.0 mΩ RDS(on) at VGS = 10 V. It features built-in gate protection diode, 175 °C channel temperature rating, and low input capacitance (2600 pF typ.), designed for high-current DC/DC converter primary-side switching and motor drive half-bridge legs.
For engineers reviewing the NP80N03MLE-S18-AY datasheet, NP80N03MLE-S18-AY pinout, NP80N03MLE-S18-AY application, or NP80N03MLE-S18-AY equivalent, key selection criteria include RDS(on) at 4.5 V–10 V gate drive, avalanche energy rating (2.5–400 mJ), thermal resistance (Rth(ch-C) = 1.25 °C/W), and TO-220 mechanical compatibility with heatsink mounting.
Technical Context
This device uses a planar vertical DMOS structure optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage (1.5–2.5 V) enables logic-level drive compatibility, while the body diode exhibits 1.0 V forward voltage at 80 A and 34 ns reverse recovery time - critical for synchronous rectification and freewheeling paths.
The MOSFET supports single-pulse avalanche operation up to 50 A (IAS) with energy ratings dependent on starting channel temperature (2.5 mJ at 175 °C, 400 mJ at 25 °C). Thermal design must account for Rth(ch-A) = 83.3 °C/W in still air and derating above 25 °C case temperature per Figure 2.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage in off-state; suitable for 24 V nominal bus systems with transient margin. |
| RDS(on) @ VGS = 10 V | 7.0 mΩ max - Enables ≤ 22.4 W conduction loss at 80 A DC, requiring active heatsinking for sustained operation. |
| RDS(on) @ VGS = 4.5 V | 11 mΩ max - Confirms usable performance with 5 V microcontroller gate drive without external level-shifting. |
| QG total | 72 nC max - Determines gate driver current requirement (~1.4 A peak for 50 ns turn-on with 1 Ω RG). |
| EAS @ Tch = 25 °C | 400 mJ - Specifies single-pulse avalanche robustness for inductive load switching without snubber. |
| Ciss | 2600 pF typ. - Impacts gate drive power loss and EMI generation; lower than comparable 80 A MOSFETs. |
| Tch max | 175 °C - Allows operation in high-ambient industrial environments with appropriate thermal management. |
Pinout & Package
NP80N03MLE-S18-AY is housed in TO-220 (MP-25K) package with standard 3-pin layout and integral metal tab (Drain-connected fin) for direct heatsink mounting. Package weight is 1.9 g; lead plating is pure Sn (Pb-free).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Left) | Gate | Control terminal; requires < ±20 V absolute max rating; protected by internal Zener diode. |
| 2 (Center) | Drain | Main high-side current path; electrically connected to metal tab - must be isolated from heatsink unless system ground referenced. |
| 3 (Right) | Source | Power return node; defines reference for gate drive; carries full load current and body diode conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Super low RDS(on) | 7.0 mΩ max at 10 V drive enables high-efficiency 24 V motor control and DC/DC converters with minimal thermal footprint. |
| Built-in gate protection diode | Integrated Zener between Gate and Source limits gate oxide stress during ESD events or gate driver faults - reduces need for external TVS. |
| 175 °C channel rating | Supports operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood auxiliary loads) without derating to 150 °C. |
| Low Ciss/Coss ratio | Ciss = 2600 pF / Coss = 590 pF improves switching efficiency and reduces Miller-induced shoot-through risk in bridge configurations. |
| Fast body diode recovery | trr = 34 ns and Qrr = 22 nC minimize switching losses and voltage spikes during commutation in synchronous rectifiers. |
Applications
| Motor Drive Half-Bridge | DC/DC Converter Primary Switch |
|---|---|
|
Use Scenario: High-current brushed DC motor control in industrial actuators with PWM frequencies up to 100 kHz. IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology; handles bidirectional current during regenerative braking via body diode conduction. Use Value: 11 mΩ RDS(on) at 4.5 V ensures full 80 A capability with standard 5 V logic drivers, eliminating gate driver ICs. |
Use Scenario: Primary-side switch in 24 V input, 5 V/40 A isolated flyback converter for factory automation I/O modules. IC Role / Device Role / Timing Role: Main power switch conducting full primary current; turns off during transformer energy transfer phase. Use Value: 400 mJ avalanche energy rating absorbs leakage inductance spikes without external clamp, simplifying magnetics design. |
| Automotive Auxiliary Load Switch | High-Current Power OR'ing |
|
Use Scenario: 24 V battery-powered HVAC blower control in commercial vehicles with ambient temperatures up to 105 °C. IC Role / Device Role / Timing Role: High-side load switch controlled via microcontroller GPIO; includes reverse polarity protection via body diode orientation. Use Value: 175 °C channel rating allows continuous 60 A operation at 105 °C ambient with standard TO-220 heatsink, meeting ISO 16750-4 requirements. |
Use Scenario: Redundant 24 V power supply OR'ing in telecom shelf controllers where two supplies feed common backplane. IC Role / Device Role / Timing Role: Low-loss ideal diode replacement; body diode blocks reverse current while MOSFET conducts forward current with minimal drop. Use Value: 1.0 V VF(S-D) at 80 A and 34 ns trr reduce conduction loss and switching noise versus Schottky diodes, improving system efficiency by >1.2%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP80NF03L | RDS(on) = 6.5 mΩ @ 10 V; Ciss = 2900 pF; TO-220FP package (shorter leads, no mounting hole). | Lacks integrated gate Zener; requires external gate protection; slightly higher gate charge (75 nC). | Preferred where lower RDS(on) justifies added protection circuitry and footprint adjustment. |
| IRF1404ZPBF | RDS(on) = 4.7 mΩ @ 10 V; VDSS = 40 V; TO-220AB package; no gate protection diode. | Higher voltage rating increases cost and capacitance; 40 V rating unnecessary for 24 V systems, reducing efficiency vs. 30 V devices. | Only suitable when 40 V transient immunity is mandatory and gate protection is externally implemented. |
Compared with STP80NF03L and IRF1404ZPBF, NP80N03MLE-S18-AY offers optimal balance of low-voltage conduction loss, integrated gate protection, and proven avalanche ruggedness for 24 V industrial switching - without requiring layout changes or additional protection components.
Availability
NP80N03MLE-S18-AY is available at Aetrix Electronics and suitable for motor drives, DC/DC converters, and automotive auxiliary load switching requiring stable component supply and long-term industrial lifecycle support.
Supply support for NP80N03MLE-S18-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
NP80N03MLE-S18-AY belongs to Renesas' legacy N-channel power MOSFET family targeting high-current, high-reliability switching in industrial power conversion and motor control - emphasizing ruggedness, thermal stability, and ease of gate drive.
FAQ
What is the maximum continuous drain current rating for NP80N03MLE-S18-AY?
The NP80N03MLE-S18-AY is rated for ±80 A DC drain current at TC = 25 °C, based on channel temperature limit of 175 °C. At elevated case temperatures, current must be derated per Figure 2 in the datasheet - e.g., ~55 A at TC = 100 °C. This rating assumes proper heatsinking and PCB copper area per MP-25K package thermal guidelines.
Does NP80N03MLE-S18-AY have built-in gate protection?
Yes, NP80N03MLE-S18-AY integrates a gate-to-source Zener diode for ESD protection, as confirmed in the Equivalent Circuit diagram (page 9) and Features section. This protects the gate oxide from transients up to ±20 V, though external gate resistors and clamping remain recommended for high-noise environments.
Can NP80N03MLE-S18-AY operate with 5 V gate drive?
Yes, NP80N03MLE-S18-AY specifies RDS(on)2 = 9.0 mΩ max at VGS = 5 V and ID = 40 A, confirming functional enhancement-mode operation with standard 5 V logic. Gate threshold voltage is 1.5–2.5 V, ensuring reliable turn-on with 5 V microcontroller outputs without level-shifting.
What is the avalanche energy rating of NP80N03MLE-S18-AY?
NP80N03MLE-S18-AY is rated for single-pulse avalanche energy (EAS) up to 400 mJ at starting channel temperature of 25 °C, decreasing to 2.5 mJ at 175 °C (Figure 4). This enables robust operation in inductive switching without external snubbers when gate drive and layout minimize parasitic inductance.
Is NP80N03MLE-S18-AY RoHS compliant and Pb-free?
Yes, NP80N03MLE-S18-AY uses pure Sn (tin) lead plating and is explicitly marked "Pb-free" in the Marking Information section (page 9) and Ordering Information table. It complies with EU RoHS Directive requirements, with chlorine content in rosin flux limited to ≤0.2 wt.% per recommended soldering conditions.
NP80N03MLE-S18-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 72 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 3900 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta), 120W (Tc)
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
NP80N03MLE-S18-AY FAQ
1.How can I place an order for NP80N03MLE-S18-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for NP80N03MLE-S18-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NP80N03MLE-S18-AY reliable?
The price and inventory of NP80N03MLE-S18-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP80N03MLE-S18-AY is usually 5 days.
3.What payment methods are accepted for NP80N03MLE-S18-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP80N03MLE-S18-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NP80N03MLE-S18-AY?
NP80N03MLE-S18-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NP80N03MLE-S18-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NP80N03MLE-S18-AY?
For technical support, including NP80N03MLE-S18-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP80N03MLE-S18-AY requirements.
6.How does Aetrix verify that NP80N03MLE-S18-AY is sourced from the original manufacturer or authorized distributors?
All NP80N03MLE-S18-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP80N03MLE-S18-AY meets industry standards.
7.What is the process for return or replacement of NP80N03MLE-S18-AY?
All NP80N03MLE-S18-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP80N03MLE-S18-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NP80N03MLE-S18-AY part is unused and in its original packaging.
Return procedure for NP80N03MLE-S18-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NP80N03MLE-S18-AY Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
