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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP80N04KHE-E1-AY

Name: NP80N04KHE-E1-AY
Brand: Renesas
SKU: NP80N04KHE-E1-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP80N04KHE-E1-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: NP80N04KHE-E1-AY.pdf

Description:: MOSFET N-CH 40V 80A TO263

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Product details

Overview

NP80N04KHE-E1-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial motor drives and DC-DC converters. It delivers 80 A continuous drain current (TC = 25°C), features 8.0 mΩ max R_DS(on) at V_GS = 10 V and I_D = 40 A, operates up to 175°C channel temperature, and uses TO-263 (MP-25ZK) surface-mount packaging with pure Sn lead plating.

For engineers reviewing the NP80N04KHE-E1-AY datasheet, NP80N04KHE-E1-AY pinout, NP80N04KHE-E1-AY application, or NP80N04KHE-E1-AY equivalent, this page provides verified technical context, real-world design meaning of key specs, validated pin functions, application-specific use cases, and two confirmed alternative parts with documented functional and application-level differences.

Technical Context

This MOSFET employs a trench-gate silicon structure optimized for low conduction loss and fast switching in hard-switched topologies. Its 40 V V_DSS rating supports 24 V and 36 V nominal bus systems, while its 120 W total power dissipation (T_C = 25°C) enables high-efficiency operation with minimal heatsinking when mounted on copper-clad PCBs.

The device integrates a built-in gate protection diode and exhibits 2200 pF typical input capacitance (C_iss) and 40 ns reverse recovery time (t_rr) under 80 A forward diode conduction - characteristics critical for synchronous rectification and freewheeling in buck and half-bridge converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Supports 24 V/36 V rail systems with 2× safety margin against transients.
R_DS(on) max	8.0 mΩ @ V_GS = 10 V, I_D = 40 A - Enables ≤3.2 W conduction loss at 40 A, reducing thermal load in compact layouts.
I_D(DC)	±80 A @ T_C = 25°C - Sustains full-rated current with proper PCB copper area (≥100 mm² 2 oz Cu per side recommended).
t_r/t_f	14–36 ns / 15–37 ns - Allows >500 kHz switching in hard-switched converters without excessive gate drive power.
Q_G	40–60 nC - Requires ~0.6 W average gate drive power at 500 kHz and 10 V swing, compatible with standard MOSFET drivers.
T_ch max	175°C - Permits operation in sealed enclosures or high-ambient environments (e.g., industrial motor control cabinets).
C_iss	2200 pF typ. - Low enough to minimize Miller-induced shoot-through risk in half-bridge configurations.

Pinout & Package

NP80N04KHE-E1-AY uses the TO-263 (MP-25ZK) package: 10.0 × 8.0 × 1.35 mm body, exposed drain pad (Pin 4), 3-pin configuration with gate (Pin 1), drain (Pin 2), and source (Pin 3). Weight: 1.5 g. Pure Sn plating, Pb-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level drive; 2.0–4.0 V threshold enables compatibility with 3.3 V and 5 V microcontrollers via gate driver.
Pin 2 (Drain)	Main current output	Connected to high-side switch node or DC bus; electrically tied to exposed metal tab (Pin 4) for thermal and electrical path.
Pin 3 (Source)	Main current return	Serves as power ground reference for gate drive; must be routed with low-inductance path to minimize switching noise.
Pin 4 (Fin/Drain)	Thermal & power connection	Exposed drain pad - requires full-solder coverage to inner-layer copper pour for optimal thermal resistance (R_th(ch-C) = 1.25°C/W).

Key Features

Feature	Design Value
Super low R_DS(on)	6.2 mΩ typ. at V_GS = 10 V - Reduces I²R losses by >30% vs. legacy 10 mΩ MOSFETs in 40 A applications.
Built-in gate protection diode	ESD-rated gate oxide with integrated Zener clamp - eliminates need for external gate resistor + TVS in moderate-noise environments.
High avalanche capability	169 mJ single-pulse E_AS at I_AS = 13 A - Withstands inductive turn-off spikes in relay drivers and solenoid controls without snubbers.
Low Q_GD/Q_G ratio	16 nC / 40–60 nC = 27–40% - Improves hard-switching efficiency and reduces voltage overshoot during dV/dt-limited transitions.
Body diode t_rr	40 ns - Enables synchronous rectification in 200–500 kHz DC-DC converters with minimal reverse recovery loss.

Applications

Motor Drive Inverter	Industrial DC-DC Converter
Use Scenario: Half-bridge leg in 24 V brushless DC motor controller for HVAC blowers. IC Role / Device Role / Timing Role: High-side and low-side switching element handling 40–60 A peak phase current at 20 kHz PWM frequency. Use Value: 8.0 mΩ R_DS(on) limits conduction loss to <1.9 W per FET at 50 A, enabling fan-cooled operation without heatsinks.	Use Scenario: Primary-side switch in isolated 24 V → 5 V/20 A flyback converter for PLC I/O modules. IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz with 50% duty cycle and 80 A pulse current capability. Use Value: 40 ns t_rr and 2200 pF C_iss reduce switching loss to <0.8 W at 250 kHz, improving overall efficiency to ≥89%.
Power Supply OR-ing	DC Bus Protection Switch
Use Scenario: Back-to-back configuration for redundant 48 V telecom power inputs in base station equipment. IC Role / Device Role / Timing Role: Low-loss ideal diode replacement with bidirectional conduction and fast fault isolation. Use Value: 1.0 V body diode V_F(S-D) at 80 A enables <0.5 V forward drop vs. 0.7 V Schottky, cutting heat generation by 30%.	Use Scenario: Solid-state main disconnect switch in 36 V battery-powered material handling vehicle. IC Role / Device Role / Timing Role: High-reliability load switch with overcurrent and short-circuit protection via external sense resistor. Use Value: 175°C channel rating ensures stable operation during 10 s stall events at 80 A, avoiding thermal shutdown.

Motor Drive Inverter

Industrial DC-DC Converter

Use Scenario: Half-bridge leg in 24 V brushless DC motor controller for HVAC blowers.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling 40–60 A peak phase current at 20 kHz PWM frequency.

Use Value: 8.0 mΩ R_DS(on) limits conduction loss to <1.9 W per FET at 50 A, enabling fan-cooled operation without heatsinks.

Use Scenario: Primary-side switch in isolated 24 V → 5 V/20 A flyback converter for PLC I/O modules.

IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz with 50% duty cycle and 80 A pulse current capability.

Use Value: 40 ns t_rr and 2200 pF C_iss reduce switching loss to <0.8 W at 250 kHz, improving overall efficiency to ≥89%.

Power Supply OR-ing

DC Bus Protection Switch

Use Scenario: Back-to-back configuration for redundant 48 V telecom power inputs in base station equipment.

IC Role / Device Role / Timing Role: Low-loss ideal diode replacement with bidirectional conduction and fast fault isolation.

Use Value: 1.0 V body diode V_F(S-D) at 80 A enables <0.5 V forward drop vs. 0.7 V Schottky, cutting heat generation by 30%.

Use Scenario: Solid-state main disconnect switch in 36 V battery-powered material handling vehicle.

IC Role / Device Role / Timing Role: High-reliability load switch with overcurrent and short-circuit protection via external sense resistor.

Use Value: 175°C channel rating ensures stable operation during 10 s stall events at 80 A, avoiding thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP80N04T	TO-220 package, 4.8 mΩ R_DS(on), 150°C T_j max, no built-in gate protection diode.	Requires external gate clamping; better suited for through-hole prototyping but lacks surface-mount thermal performance.	Choose for manual assembly or lower-cost non-volume production where PCB space is not constrained.
STP80NF55-08	TO-220 package, 8.0 mΩ R_DS(on), 175°C T_j, 55 V V_DSS, no integrated gate protection.	Higher voltage margin allows 48 V system use, but larger package increases layout inductance and reduces thermal coupling to PCB.	Choose when 48 V bus compatibility is required and gate driver includes robust ESD protection.

Compared with NP80N04KHE-E1-AY, IXTP80N04T offers lower R_DS(on) but sacrifices surface-mount thermal efficiency and gate protection; STP80NF55-08 adds 15 V voltage headroom at the cost of higher switching losses and reduced PCB thermal management capability.

Availability

NP80N04KHE-E1-AY is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power supplies, and battery management systems requiring stable component supply across multi-year production cycles.

Supply support for NP80N04KHE-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.

NP80N04KHE-E1-AY belongs to Renesas' legacy high-current N-channel MOSFET product line, engineered for ruggedized industrial switching applications including motor control, power conversion, and load switching where reliability at elevated temperatures is essential.

FAQ

What is the maximum continuous drain current rating for NP80N04KHE-E1-AY?

NP80N04KHE-E1-AY is rated for ±80 A continuous drain current at case temperature (T_C) = 25°C. This rating assumes adequate PCB copper area (≥100 mm² per side, 2 oz Cu) and proper thermal vias under the exposed drain pad. At higher case temperatures, derating applies per Figure 2 in the datasheet D14239EJ7V0DS.

Does NP80N04KHE-E1-AY include integrated gate protection?

Yes, NP80N04KHE-E1-AY incorporates a built-in gate protection diode between gate and source, as shown in the equivalent circuit diagram on page 9 of datasheet D14239EJ7V0DS. This Zener-type clamp protects against electrostatic discharge, though external gate resistors remain recommended for high-dV/dt environments.

What is the R_DS(on) value of NP80N04KHE-E1-AY at 10 V gate drive?

NP80N04KHE-E1-AY has a maximum R_DS(on) of 8.0 mΩ at V_GS = 10 V and I_D = 40 A, with a typical value of 6.2 mΩ under the same conditions. This low on-resistance is achieved using trench-gate silicon technology and is specified in the Electrical Characteristics table on page 3 of datasheet D14239EJ7V0DS.

Which package type does NP80N04KHE-E1-AY use, and what are its thermal characteristics?

NP80N04KHE-E1-AY uses the TO-263 (MP-25ZK) surface-mount package with an exposed drain pad. Its channel-to-case thermal resistance is 1.25°C/W, and channel-to-ambient is 83.3°C/W - values confirmed in the Thermal Resistance table on page 2 of datasheet D14239EJ7V0DS.

Is NP80N04KHE-E1-AY suitable for synchronous rectification applications?

Yes, NP80N04KHE-E1-AY is suitable for synchronous rectification due to its 40 ns reverse recovery time (t_rr) and 1.0 V body diode forward voltage (V_F(S-D)) at 80 A, both measured under standardized conditions (I_F = 80 A, V_GS = 0 V, di/dt = 100 A/μs). These parameters enable efficient operation in 200–500 kHz DC-DC converters.

NP80N04KHE-E1-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 120W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263

NP80N04KHE-E1-AY FAQ

1.How can I place an order for NP80N04KHE-E1-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP80N04KHE-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP80N04KHE-E1-AY reliable?

The price and inventory of NP80N04KHE-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP80N04KHE-E1-AY is usually 5 days.

3.What payment methods are accepted for NP80N04KHE-E1-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP80N04KHE-E1-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP80N04KHE-E1-AY?

NP80N04KHE-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP80N04KHE-E1-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP80N04KHE-E1-AY?

For technical support, including NP80N04KHE-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP80N04KHE-E1-AY requirements.

6.How does Aetrix verify that NP80N04KHE-E1-AY is sourced from the original manufacturer or authorized distributors?

All NP80N04KHE-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP80N04KHE-E1-AY meets industry standards.

7.What is the process for return or replacement of NP80N04KHE-E1-AY?

All NP80N04KHE-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP80N04KHE-E1-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP80N04KHE-E1-AY part is unused and in its original packaging.

Return procedure for NP80N04KHE-E1-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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