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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP80N04MHE-S18-AY

Name: NP80N04MHE-S18-AY
Brand: Renesas
SKU: NP80N04MHE-S18-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP80N04MHE-S18-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: NP80N04MHE-S18-AY.pdf

Description:: MOSFET N-CH 40V 80A TO220

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Product details

Overview

NP80N04MHE-S18-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor control circuits. It delivers 80 A continuous drain current (TC = 25°C), 40 V drain-source breakdown voltage, and ultra-low on-resistance of 6.2–8.0 mΩ at V_GS = 10 V and I_D = 40 A, enabling efficient high-power switching in TO-220 (MP-25K) package.

For engineers reviewing the NP80N04MHE-S18-AY datasheet, NP80N04MHE-S18-AY pinout, NP80N04MHE-S18-AY application, or NP80N04MHE-S18-AY equivalent, key selection criteria include its 175°C channel temperature rating, built-in gate protection diode, avalanche energy capability (up to 169 mJ), low input capacitance (2200 pF typ.), and suitability for hard-switched SMPS, DC-DC converters, and solenoid drivers requiring robust thermal performance and fast turn-on/turn-off timing.

Technical Context

This device operates as a voltage-controlled unidirectional switch with enhancement-mode N-channel topology. Its gate threshold voltage (2.0–4.0 V) enables compatibility with standard 3.3 V and 5 V logic-level drivers when used with appropriate gate drive strength, while its 1.25°C/W channel-to-case thermal resistance supports high-power dissipation in conduction-limited applications.

The integrated body diode exhibits 1.0 V forward voltage at 80 A and 40 ns reverse recovery time under specified test conditions (di/dt = 100 A/μs), making it suitable for freewheeling paths in synchronous rectification and H-bridge topologies where controlled reverse recovery is critical to minimize switching losses and voltage overshoot.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage before avalanche; defines safe operating range in 24 V/36 V industrial bus systems.
R_DS(on)	6.2–8.0 mΩ @ V_GS=10 V, I_D=40 A - Enables <1 W conduction loss at 40 A, reducing heatsink requirements.
I_D(DC)	±80 A @ T_C=25°C - Continuous current rating referenced to case temperature, not ambient; requires mechanical mounting to heatsink.
Q_G	40–60 nC - Total gate charge determines required driver peak current for 10–50 ns switching transitions.
T_ch	175°C - Maximum allowable channel junction temperature; sets upper limit for thermal design margin.
E_AS	2.7–169 mJ - Single-pulse avalanche energy varies with starting channel temperature; supports inductive load switching without external snubbers.
C_iss	2200–3300 pF - Input capacitance impacts gate drive loop stability and Miller effect during switching.

Pinout & Package

NP80N04MHE-S18-AY uses the TO-220 (MP-25K) package - a through-hole, thermally enhanced plastic housing with 4 terminals and integral metal tab (Drain-connected fin) for direct heatsink mounting. Mass: 1.9 g. Lead plating: Pure Sn (Tin), Pb-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives voltage signal to modulate channel conductivity; requires ESD protection due to internal gate oxide sensitivity.
2 (Drain)	Main current output terminal	Connected internally to metal tab (fin); must be electrically isolated from heatsink unless system ground reference permits.
3 (Source)	Main current return path	Reference node for gate drive; forms common return for load current and gate loop; low-inductance layout essential.
4 (Fin / Drain)	Thermal & electrical extension of Drain	Exposed metal surface for heatsinking; electrically identical to Pin 2; requires insulating washer if mounted to grounded heatsink.

Key Features

Feature	Design Value
Channel temperature rating	175°C - Enables operation in high-ambient environments (e.g., enclosed industrial enclosures) without derating below full current.
Low R_DS(on)	6.2–8.0 mΩ - Reduces I²R conduction loss by >30% vs. comparable 40 V MOSFETs, improving efficiency in 12–48 V power stages.
Built-in gate protection diode	Integrated ESD clamp between Gate and Source - Provides Class 2 HBM ESD immunity (≥2 kV) without external components.
Avalanche ruggedness	Single-pulse E_AS up to 169 mJ - Allows reliable operation in inductive switching (e.g., relay/solenoid driving) without external clamping.
Low C_iss	2200 pF typical - Minimizes gate drive power and improves switching speed consistency across temperature and voltage ranges.

Applications

Industrial Power Supply	DC Motor Control
Use Scenario: High-efficiency 24 V/48 V offline AC-DC or isolated DC-DC converter primary-side switching stage. IC Role / Device Role / Timing Role: Main power switch in flyback or forward converter topology; handles repetitive 50–200 kHz hard switching with peak currents ≥60 A. Use Value: Low R_DS(on) and 175°C rating reduce thermal stress and improve power density; avalanche capability eliminates need for external RCD snubber.	Use Scenario: Half-bridge or H-bridge driver for brushed DC motors in factory automation actuators. IC Role / Device Role / Timing Role: High-side or low-side switching element controlling bidirectional motor current up to 80 A peak. Use Value: Fast switching (td(on)/td(off) ≤ 52/88 ns) and low Q_G enable precise PWM duty cycle control; integrated body diode supports freewheeling without external Schottky.
Solenoid & Relay Driver	Uninterruptible Power System (UPS)
Use Scenario: High-reliability 24–48 V solenoid actuation in safety-critical pneumatic/hydraulic valves. IC Role / Device Role / Timing Role: Single-ended switch managing inductive load turn-off transients; subjected to repeated avalanche events. Use Value: Guaranteed single-pulse avalanche energy (169 mJ at T_ch = 25°C) ensures consistent lifetime under worst-case inductive kickback without failure.	Use Scenario: Battery backup switching and inverter output stage in line-interactive UPS units. IC Role / Device Role / Timing Role: Bidirectional power path switch isolating battery from inverter during grid-fail transitions; conducts 80 A continuously during discharge. Use Value: TO-220 (MP-25K) package with metal fin provides stable thermal interface to heatsink; 120 W power dissipation rating supports sustained high-current operation.

Industrial Power Supply

DC Motor Control

Use Scenario: High-efficiency 24 V/48 V offline AC-DC or isolated DC-DC converter primary-side switching stage.

IC Role / Device Role / Timing Role: Main power switch in flyback or forward converter topology; handles repetitive 50–200 kHz hard switching with peak currents ≥60 A.

Use Value: Low R_DS(on) and 175°C rating reduce thermal stress and improve power density; avalanche capability eliminates need for external RCD snubber.

Use Scenario: Half-bridge or H-bridge driver for brushed DC motors in factory automation actuators.

IC Role / Device Role / Timing Role: High-side or low-side switching element controlling bidirectional motor current up to 80 A peak.

Use Value: Fast switching (td(on)/td(off) ≤ 52/88 ns) and low Q_G enable precise PWM duty cycle control; integrated body diode supports freewheeling without external Schottky.

Solenoid & Relay Driver

Uninterruptible Power System (UPS)

Use Scenario: High-reliability 24–48 V solenoid actuation in safety-critical pneumatic/hydraulic valves.

IC Role / Device Role / Timing Role: Single-ended switch managing inductive load turn-off transients; subjected to repeated avalanche events.

Use Value: Guaranteed single-pulse avalanche energy (169 mJ at T_ch = 25°C) ensures consistent lifetime under worst-case inductive kickback without failure.

Use Scenario: Battery backup switching and inverter output stage in line-interactive UPS units.

IC Role / Device Role / Timing Role: Bidirectional power path switch isolating battery from inverter during grid-fail transitions; conducts 80 A continuously during discharge.

Use Value: TO-220 (MP-25K) package with metal fin provides stable thermal interface to heatsink; 120 W power dissipation rating supports sustained high-current operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF40	40 V V_DSS, 80 A I_D(DC), R_DS(on) = 8.5 mΩ, TO-220 package, no integrated gate protection diode.	Lacks built-in gate ESD diode; requires external Zener clamp; slightly higher R_DS(on) increases conduction loss by ~6% at 40 A.	Acceptable where board space allows discrete protection and thermal margin exists for higher on-loss.
IRF1404ZPBF	40 V V_DSS, 130 A I_D(DC), R_DS(on) = 4.7 mΩ, TO-220 package, no integrated gate protection diode.	Higher current rating and lower R_DS(on) but larger die size increases gate charge (Q_G = 130 nC) and cost; no gate protection diode.	Preferred only when >80 A peak current or <5 mΩ R_DS(on) is mandatory; gate drive must handle higher Q_G.

Compared with STP80NF40 and IRF1404ZPBF, NP80N04MHE-S18-AY offers balanced trade-offs: integrated gate protection reduces BOM count and layout complexity, its 6.2–8.0 mΩ R_DS(on) delivers superior efficiency over STP80NF40, and its 40–60 nC Q_G enables faster switching than IRF1404ZPBF's 130 nC-making it optimal for compact, thermally constrained industrial switchers.

Availability

NP80N04MHE-S18-AY is available at Aetrix Electronics and suitable for industrial power supplies, motor controllers, solenoid drivers, and UPS systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for NP80N04MHE-S18-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and mixed-signal solutions.

NP80N04MHE-S18-AY belongs to Renesas' legacy N-channel power MOSFET family targeting high-current, high-reliability industrial switching applications-including power conversion, motor drives, and electromagnetic actuation-where thermal robustness and avalanche tolerance are critical.

FAQ

What is the maximum continuous drain current rating for NP80N04MHE-S18-AY?

The maximum continuous drain current (I_D(DC)) for NP80N04MHE-S18-AY is ±80 A, specified at case temperature T_C = 25°C. This rating assumes proper heatsinking to maintain the case at 25°C; actual usable current must be derated per the datasheet's derating curve when T_C exceeds 25°C. The device's 1.25°C/W channel-to-case thermal resistance enables high current handling when mounted to an adequately sized heatsink.

Does NP80N04MHE-S18-AY include built-in gate protection?

Yes, NP80N04MHE-S18-AY integrates a gate-to-source protection diode as part of its internal equivalent circuit. This diode safeguards the thin gate oxide against electrostatic discharge (ESD) events, providing inherent Class 2 HBM ESD immunity (≥2 kV). However, Renesas explicitly states that external protection remains necessary if voltages exceeding the ±20 V gate-source rating may occur in the application circuit.

What is the avalanche energy rating of NP80N04MHE-S18-AY and how is it applied?

NP80N04MHE-S18-AY is rated for single-pulse avalanche energy (E_AS) ranging from 2.7 mJ to 169 mJ, depending on starting channel temperature (25°C → 169 mJ; 120°C → 96 mJ; 160°C → 2.7 mJ). This rating applies to unclamped inductive switching events where V_DS exceeds BVDSS. Engineers use this parameter to validate reliability in solenoid, relay, or motor freewheeling circuits without external snubbers-provided pulse conditions match the test setup (RG = 25 Ω, V_GS = 20 → 0 V).

What package type does NP80N04MHE-S18-AY use and what are its thermal characteristics?

NP80N04MHE-S18-AY uses the TO-220 (MP-25K) package-a 4-terminal through-hole variant with an exposed metal fin (Pin 4) electrically tied to the Drain. Its thermal performance is defined by R_th(ch-C) = 1.25°C/W (channel-to-case) and R_th(ch-A) = 83.3°C/W (channel-to-ambient). Effective thermal design requires mounting the metal fin to a heatsink using thermally conductive insulating hardware, as the fin is at Drain potential.

Is NP80N04MHE-S18-AY suitable for automotive applications?

No, NP80N04MHE-S18-AY is classified as a "Standard" quality grade device per Renesas' product categorization, intended for computers, office equipment, industrial robots, and home appliances-not automotive or safety-critical systems. It lacks AEC-Q101 qualification, extended temperature validation beyond −55°C to +175°C, or automotive-specific reliability testing. For automotive use, Renesas offers separate AEC-Q101-qualified MOSFET families with documented PPAP support.

NP80N04MHE-S18-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 8mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 3300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 120W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

NP80N04MHE-S18-AY FAQ

1.How can I place an order for NP80N04MHE-S18-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP80N04MHE-S18-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP80N04MHE-S18-AY reliable?

The price and inventory of NP80N04MHE-S18-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP80N04MHE-S18-AY is usually 5 days.

3.What payment methods are accepted for NP80N04MHE-S18-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP80N04MHE-S18-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP80N04MHE-S18-AY?

NP80N04MHE-S18-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP80N04MHE-S18-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP80N04MHE-S18-AY?

For technical support, including NP80N04MHE-S18-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP80N04MHE-S18-AY requirements.

6.How does Aetrix verify that NP80N04MHE-S18-AY is sourced from the original manufacturer or authorized distributors?

All NP80N04MHE-S18-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP80N04MHE-S18-AY meets industry standards.

7.What is the process for return or replacement of NP80N04MHE-S18-AY?

All NP80N04MHE-S18-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP80N04MHE-S18-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP80N04MHE-S18-AY part is unused and in its original packaging.

Return procedure for NP80N04MHE-S18-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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