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Renesas NP80N04MLG-S18-AY
- Part No.:
- NP80N04MLG-S18-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
NP80N04MLG-S18-AY.pdf
- Description:
- MOSFET N-CH 40V 80A TO220
- Quantity:
- Payment:
- Shipping:
Inventory:6,697
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Product details
Overview
NP80N04MLG-S18-AY from Renesas Electronics is an N-channel power MOSFET in TO-220 package, rated for 40 V VDSS, ±80 A DC drain current, and 4.8 mΩ max RDS(on) at VGS = 10 V / ID = 40 A. It features logic-level gate drive (VGS(th) = 1.4–2.5 V), built-in gate protection diode, and AEC-Q101 qualification for automotive switching applications including motor control and DC-DC converters.
For engineers reviewing the NP80N04MLG-S18-AY datasheet, NP80N04MLG-S18-AY pinout, NP80N04MLG-S18-AY application, or NP80N04MLG-S18-AY equivalent, key selection criteria include its 4.5 V gate drive capability, 115 W case-rated power dissipation, low Ciss (4600 pF typ.), and thermal resistance of 1.30 °C/W (ch-to-case), critical for high-current thermal management in industrial and automotive power stages.
Technical Context
This device uses a planar vertical DMOS structure optimized for low conduction loss and fast switching. Its gate threshold voltage range (1.4–2.5 V) ensures reliable turn-on with standard 3.3 V or 5 V logic controllers, while the integrated gate protection diode guards against ESD up to ±20 V gate-source rating.
The MOSFET supports repetitive avalanche operation (IAR = 37 A, EAR = 137 mJ) and exhibits low reverse recovery charge (Qrr = 39 nC) in its body diode, enabling robust performance in hard-switched and synchronous rectification topologies without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage compatible with 12 V/24 V automotive and industrial bus systems. |
| RDS(on) max @ 10 V | 4.8 mΩ - Enables ≤3.8 W conduction loss at 80 A, reducing heatsink requirements in high-current switches. |
| ID(DC) | ±80 A - Supports high-power load switching such as starter solenoids, HVAC blowers, and battery disconnects. |
| Ciss typ. | 4600 pF - Low input capacitance allows fast switching with modest gate driver current (QG = 90–135 nC). |
| Rth(ch-C) | 1.30 °C/W - Enables efficient heat transfer to heatsink; permits 115 W continuous dissipation at TC = 25°C. |
| VGS(th) | 1.4–2.5 V - Logic-level compatibility ensures full enhancement with microcontroller GPIO or low-voltage gate drivers. |
| AEC-Q101 | Qualified - Validated for automotive underhood applications per stress test requirements (HTOL, TC, HTRB, etc.). |
Pinout & Package
NP80N04MLG-S18-AY is housed in a TO-220 (MP-25K) package with isolated tab (Drain-connected fin), weighing ~1.9 g. The plastic body provides creepage/clearance suitable for 400 V working insulation when mounted with insulating hardware.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Lead) | Gate | Control terminal; accepts logic-level voltage (1.4–2.5 V threshold); requires <135 nC total charge for full turn-on. |
| 2 (Tab) | Drain | Main high-side current path; electrically connected to metal fin for thermal and electrical conduction to heatsink. |
| 3 (Lead) | Source | Power return node; referenced to system ground in low-side switch configurations; carries full load current. |
| 4 (Fin) | Drain (thermal) | Exposed metal surface tied internally to Drain; must be electrically isolated from PCB but thermally coupled to heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5 V, eliminating need for gate boosters in 5 V MCU-controlled systems. |
| Built-in gate protection diode | ESD protection rated to ±20 V on gate-source, reducing external TVS requirements in space-constrained designs. |
| Super low RDS(on) | 4.8 mΩ max at 10 V enables <0.3% efficiency loss in 48 V/80 A power distribution modules. |
| High avalanche ruggedness | 137 mJ repetitive avalanche energy supports inductive load switching without external clamping in motor drives. |
| Pb-free plating | RoHS-compliant pure Sn lead finish compatible with standard reflow profiles (peak 260°C, ≤10 s). |
Applications
| Automotive Motor Control | Industrial DC-DC Converter |
|---|---|
Use Scenario: Driving 12 V blower motors and radiator fan assemblies in passenger vehicles. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling PWM-driven brushed DC motors. Use Value: Low RDS(on) minimizes I²R heating during continuous 60–80 A duty cycles; AEC-Q101 qualification ensures reliability over 15-year vehicle lifetime. | Use Scenario: Primary-side synchronous rectifier in 48 V to 12 V isolated DC-DC converters for telecom power supplies. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes to improve conversion efficiency. Use Value: Body diode Qrr = 39 nC and low VF(S-D) = 0.95 V reduce switching losses and reverse recovery spikes, enabling >95% efficiency at 500 kHz. |
| Energy Storage System (ESS) BMS | Commercial HVAC Compressor Drive |
Use Scenario: Bidirectional contactor replacement in lithium-ion battery pack isolation circuits. IC Role / Device Role / Timing Role: Solid-state main disconnect switch handling 80 A continuous and 300 A pulse currents. Use Value: 115 W power rating and 1.30 °C/W thermal resistance allow direct mounting to aluminum chassis without auxiliary heatsinks in compact BMS enclosures. | Use Scenario: Inverter output stage for variable-speed scroll compressors in rooftop HVAC units. IC Role / Device Role / Timing Role: Half-bridge low-side switch in 3-phase IGBT/MOSFET inverter modules. Use Value: Fast switching (td(off) = 74 ns typ.) and low gate charge support 20 kHz PWM operation with minimal dead-time distortion and reduced EMI filtering burden. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP80NF55-08 | Higher VDSS (55 V), higher RDS(on) (8.0 mΩ), TO-220 package, no AEC-Q101 qualification. | Suitable for 48 V industrial systems but not certified for automotive underhood use. | Select when higher voltage margin is required and automotive qualification is unnecessary. |
| IRF1404ZPBF | Same VDSS (40 V), higher RDS(on) (4.9 mΩ min), TO-220, no AEC-Q101, lower QG (71 nC). | Lower gate charge eases driving but lacks automotive validation and has higher conduction loss at full load. | Prefer for cost-sensitive non-automotive 12 V/24 V switching where gate drive strength is limited. |
Compared with STP80NF55-08 and IRF1404ZPBF, NP80N04MLG-S18-AY delivers superior conduction efficiency at 40 V systems, guaranteed automotive qualification, and integrated gate protection-making it the optimal choice for safety-critical, thermally constrained, and high-reliability automotive power switching.
Availability
NP80N04MLG-S18-AY is available at Aetrix Electronics and suitable for automotive motor control, industrial DC-DC conversion, and energy storage system (ESS) BMS applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for NP80N04MLG-S18-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and automotive ICs.
NP80N04MLG-S18-AY belongs to Renesas' legacy high-current power MOSFET family designed specifically for AEC-Q101-compliant automotive and industrial switching applications demanding low RDS(on), robust avalanche capability, and logic-level gate drive.
FAQ
What is the maximum continuous drain current rating for NP80N04MLG-S18-AY?
The NP80N04MLG-S18-AY is rated for ±80 A DC drain current at TC = 25°C. This rating assumes proper heatsinking to maintain channel temperature ≤175°C and accounts for derating above 25°C case temperature per the datasheet's derating curve. At elevated temperatures, the usable current drops linearly-e.g., ~55 A at TC = 100°C.
Does NP80N04MLG-S18-AY require an external gate resistor for safe operation?
Yes, NP80N04MLG-S18-AY benefits from an external gate resistor to control dV/dt and prevent oscillation during switching. While not strictly mandatory for static operation, a 5–25 Ω resistor is recommended to limit peak gate current (given QG = 90–135 nC) and damp ringing caused by PCB trace inductance and Ciss/Crss interaction.
Is NP80N04MLG-S18-AY suitable for synchronous rectification in DC-DC converters?
Yes, NP80N04MLG-S18-AY is well-suited for synchronous rectification due to its low RDS(on) (4.8 mΩ max), fast switching times (td(on) = 17 ns, tf = 8 ns), and low body diode Qrr (39 nC). Its logic-level gate drive simplifies control in 5 V or 3.3 V controller-based designs, and the TO-220 package facilitates thermal management in medium-power converters.
What is the meaning of "-S18-AY" in the part number NP80N04MLG-S18-AY?
The suffix "-S18-AY" denotes the specific ordering variant: "S18" indicates tape-and-reel packaging per Renesas internal standards (though NP80N04MLG uses tube packing per datasheet), and "AY" identifies the Pb-free pure tin plating finish compliant with RoHS Directive 2011/65/EU. This suffix confirms environmental compliance and mechanical finish for soldering.
Can NP80N04MLG-S18-AY be used in parallel configurations for higher current handling?
Yes, NP80N04MLG-S18-AY can be paralleled, but requires careful design: matched gate resistors, symmetrical PCB layout, and individual source resistors for current balancing. Its positive temperature coefficient of RDS(on) (increasing with temperature) aids inherent current sharing, but thermal coupling between devices must be minimized to avoid thermal runaway.
NP80N04MLG-S18-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 4.8mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 135 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 6900 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta), 115W (Tc)
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
NP80N04MLG-S18-AY FAQ
1.How can I place an order for NP80N04MLG-S18-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for NP80N04MLG-S18-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NP80N04MLG-S18-AY reliable?
The price and inventory of NP80N04MLG-S18-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP80N04MLG-S18-AY is usually 5 days.
3.What payment methods are accepted for NP80N04MLG-S18-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP80N04MLG-S18-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NP80N04MLG-S18-AY?
NP80N04MLG-S18-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NP80N04MLG-S18-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NP80N04MLG-S18-AY?
For technical support, including NP80N04MLG-S18-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP80N04MLG-S18-AY requirements.
6.How does Aetrix verify that NP80N04MLG-S18-AY is sourced from the original manufacturer or authorized distributors?
All NP80N04MLG-S18-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP80N04MLG-S18-AY meets industry standards.
7.What is the process for return or replacement of NP80N04MLG-S18-AY?
All NP80N04MLG-S18-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP80N04MLG-S18-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NP80N04MLG-S18-AY part is unused and in its original packaging.
Return procedure for NP80N04MLG-S18-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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