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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP80N04NDG-S18-AY

Name: NP80N04NDG-S18-AY
Brand: Renesas
SKU: NP80N04NDG-S18-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP80N04NDG-S18-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: NP80N04NDG-S18-AY.pdf

Description:: MOSFET N-CH 40V 80A TO262

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Product details

Overview

NP80N04NDG-S18-AY from Renesas Electronics is an N-channel power MOSFET in TO-262 (MP-25SK) package, rated for 40 V V_DSS, ±80 A DC drain current, and 4.8 mΩ max R_DS(on) at V_GS = 10 V / I_D = 40 A. It features logic-level gate drive (V_GS(th) = 1.4–2.5 V), low input capacitance (C_iss = 4600 pF typ), and AEC-Q101 qualification for automotive switching applications such as DC motor control and power supply OR-ing.

For engineers reviewing the NP80N04NDG-S18-AY datasheet, NP80N04NDG-S18-AY pinout, NP80N04NDG-S18-AY application, or NP80N04NDG-S18-AY equivalent, key selection criteria include its 4.5 V logic-compatible turn-on threshold, 115 W case-rated power dissipation, 1.30 °C/W channel-to-case thermal resistance, and suitability for high-current, low-loss switching in 12 V/24 V automotive subsystems.

Technical Context

This device operates as a unidirectional, enhancement-mode N-channel MOSFET with integrated body diode. Its gate threshold voltage range (1.4–2.5 V) enables direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting. The low R_DS(on) and high ID(DC) rating support continuous conduction in high-side or low-side switch configurations where thermal management is critical.

Designed for automotive-grade reliability, it meets AEC-Q101 stress testing requirements and supports repetitive avalanche energy of 137 mJ (T_ch ≤ 150°C, R_G = 25 Ω). Its C_iss/C_oss/C_rss values (4600/480/310 pF typ) define switching speed and gate drive strength requirements for hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage in off-state; suitable for 12 V/24 V automotive rails with margin.
I_D(DC)	±80 A - Continuous drain current at T_C = 25°C; defines maximum steady-state load capability.
R_DS(on) max	4.8 mΩ @ V_GS = 10 V, I_D = 40 A - On-resistance directly determines conduction loss and junction temperature rise.
V_GS(th)	1.4–2.5 V - Gate threshold range ensures reliable turn-on with standard logic-level drivers.
C_iss	4600 pF typ - Input capacitance governs required gate charge (Q_G = 90–135 nC) and driver sizing.
R_th(ch-C)	1.30 °C/W - Channel-to-case thermal resistance enables accurate heatsink design for 115 W P_T1.
AEC-Q101	Qualified - Confirmed reliability for automotive underhood and chassis applications per JEDEC standard.

Pinout & Package

NP80N04NDG-S18-AY uses the TO-262 (MP-25SK) package - a straight-leaded variant of TO-220 with isolated mounting tab - weighing approximately 1.8 g. The package provides mechanical robustness and thermal performance suitable for industrial and automotive environments.

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate	Control terminal; requires <135 nC total gate charge and withstands ±20 V V_GS max.
2 (Tab)	Drain	Main high-side current path; electrically connected to metal tab for thermal and electrical conduction.
3 (Lead)	Source	Return path for drain current; referenced to system ground in low-side switch configuration.
4 (Fin)	Drain (Thermal)	Exposed metal fin on package backside; must be electrically isolated and thermally coupled to heatsink.

Key Features

Feature	Design Value
Logic-level gate drive	Turns on fully with 4.5 V gate voltage, enabling direct MCU GPIO control without external driver stages.
Ultra-low R_DS(on)	4.8 mΩ max at 10 V ensures <3.8 W conduction loss at 80 A, reducing heatsink size and cost.
High avalanche ruggedness	137 mJ repetitive avalanche energy allows safe operation during inductive load switching transients.
Automotive qualification	AEC-Q101 certified for use in engine control modules, body electronics, and ADAS power stages.
Low C_iss/C_rss ratio	4600 pF / 310 pF ratio improves switching efficiency and reduces EMI in high-frequency PWM designs.

Applications

DC Motor Control	Automotive Power Distribution
Use Scenario: Bidirectional 12 V/24 V brushed DC motor control in power seats, HVAC actuators, or wiper systems. IC Role / Device Role / Timing Role: Low-side or high-side switching element handling up to 80 A peak current with fast turn-on/off (<148 ns td(off)). Use Value: Enables compact, efficient H-bridge implementation with minimal conduction loss and thermal derating.	Use Scenario: Solid-state replacement for mechanical relays in battery disconnect units and fuseless power distribution boxes. IC Role / Device Role / Timing Role: High-current electronic switch controlling power delivery to subsystems like lighting or infotainment. Use Value: Eliminates contact wear and bounce while supporting diagnostic current sensing via R_DS(on) monitoring.
OR-ing Diode Replacement	Industrial DC-DC Converter Primary Switch
Use Scenario: Redundant 24 V power supply OR-ing in telecom or industrial control cabinets. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET replacing Schottky diodes to reduce forward voltage drop. Use Value: Cuts conduction loss by >60% vs. 0.5 V diode drop, lowering thermal load and improving system efficiency.	Use Scenario: Primary-side switch in 200–500 W isolated DC-DC converters for factory automation equipment. IC Role / Device Role / Timing Role: Hard-switched power transistor operating at 50–100 kHz with 40 V input range. Use Value: Low Q_G and optimized capacitance enable efficient gate driving and reduced switching losses at medium frequency.

DC Motor Control

Automotive Power Distribution

Use Scenario: Bidirectional 12 V/24 V brushed DC motor control in power seats, HVAC actuators, or wiper systems.

IC Role / Device Role / Timing Role: Low-side or high-side switching element handling up to 80 A peak current with fast turn-on/off (<148 ns td(off)).

Use Value: Enables compact, efficient H-bridge implementation with minimal conduction loss and thermal derating.

Use Scenario: Solid-state replacement for mechanical relays in battery disconnect units and fuseless power distribution boxes.

IC Role / Device Role / Timing Role: High-current electronic switch controlling power delivery to subsystems like lighting or infotainment.

Use Value: Eliminates contact wear and bounce while supporting diagnostic current sensing via R_DS(on) monitoring.

OR-ing Diode Replacement

Industrial DC-DC Converter Primary Switch

Use Scenario: Redundant 24 V power supply OR-ing in telecom or industrial control cabinets.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET replacing Schottky diodes to reduce forward voltage drop.

Use Value: Cuts conduction loss by >60% vs. 0.5 V diode drop, lowering thermal load and improving system efficiency.

Use Scenario: Primary-side switch in 200–500 W isolated DC-DC converters for factory automation equipment.

IC Role / Device Role / Timing Role: Hard-switched power transistor operating at 50–100 kHz with 40 V input range.

Use Value: Low Q_G and optimized capacitance enable efficient gate driving and reduced switching losses at medium frequency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4LF8AG	40 V, 220 A, R_DS(on) = 1.8 mΩ @ 10 V; PowerFLAT 8x8 package, surface-mount.	Higher current rating but SMT-only; unsuitable for through-hole TO-262 footprint.	Select when board space is constrained and reflow assembly is available; not a drop-in replacement.
IRF1404ZPBF	40 V, 180 A, R_DS(on) = 4.7 mΩ @ 10 V; TO-220 package, non-automotive qualified.	Lacks AEC-Q101 certification; higher R_DS(on) tolerance and no guaranteed 4.5 V logic-level turn-on.	Acceptable for industrial non-automotive use where qualification is not required and gate drive ≥10 V is available.

Compared with STL220N4LF8AG and IRF1404ZPBF, NP80N04NDG-S18-AY offers the optimal balance of automotive qualification, TO-262 through-hole compatibility, and verified 4.5 V logic-level operation-making it uniquely suited for legacy-replacement and mechanically robust automotive power modules.

Availability

NP80N04NDG-S18-AY is available at Aetrix Electronics and suitable for automotive power distribution, DC motor control, and OR-ing diode replacement requiring stable component supply across production lifecycles.

Supply support for NP80N04NDG-S18-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.

The NP80N04NDG-S18-AY belongs to Renesas' automotive-qualified N-channel power MOSFET family, engineered for high-current, low-R_DS(on) switching in harsh-environment vehicle subsystems.

FAQ

What is the maximum continuous drain current rating for NP80N04NDG-S18-AY?

The NP80N04NDG-S18-AY is rated for ±80 A DC drain current at case temperature T_C = 25°C. Derating applies above 25°C per the datasheet's thermal curve; at T_C = 100°C, the usable I_D(DC) drops to approximately 45 A due to thermal limits. This rating assumes proper heatsinking with R_th(ch-C) = 1.30 °C/W.

Is NP80N04NDG-S18-AY compatible with 3.3 V microcontroller GPIOs?

Yes, NP80N04NDG-S18-AY has a gate threshold voltage range of 1.4–2.5 V and is specified to deliver R_DS(on) ≤ 9.0 mΩ at V_GS = 4.5 V, making it fully compatible with 3.3 V logic outputs when used with appropriate gate resistor and layout. Full enhancement occurs at ≥4.5 V, ensuring robust switching without external level shifters.

Does NP80N04NDG-S18-AY have an integrated body diode, and what is its forward voltage?

Yes, NP80N04NDG-S18-AY includes an intrinsic body diode with VF(S-D) = 0.94–1.5 V at I_F = 80 A and V_GS = 0 V. This diode supports freewheeling in inductive loads and enables synchronous rectification or OR-ing configurations, though reverse recovery time (t_rr = 39 ns) must be considered in high-frequency designs.

What packaging and plating does NP80N04NDG-S18-AY use?

NP80N04NDG-S18-AY is supplied in TO-262 (MP-25SK) package with tube packing (50 pieces per tube) and pure tin (Sn) lead plating. It is Pb-free compliant, with "DG" in the marking denoting the RoHS-compliant plating, and "S18-AY" indicating the specific tape-and-reel or tube variant per Renesas' ordering code system.

Can NP80N04NDG-S18-AY be used in avalanche mode, and what are the limits?

Yes, NP80N04NDG-S18-AY is characterized for repetitive avalanche operation with I_AR = 37 A and E_AR = 137 mJ under conditions of T_ch ≤ 150°C and R_G = 25 Ω. These ratings allow safe clamping of inductive spikes in relay or solenoid drive circuits, provided avalanche energy per pulse remains within spec and average power stays within thermal limits.

NP80N04NDG-S18-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 4.8mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 135 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 6900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 115W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

NP80N04NDG-S18-AY FAQ

1.How can I place an order for NP80N04NDG-S18-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP80N04NDG-S18-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP80N04NDG-S18-AY reliable?

The price and inventory of NP80N04NDG-S18-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP80N04NDG-S18-AY is usually 5 days.

3.What payment methods are accepted for NP80N04NDG-S18-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP80N04NDG-S18-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP80N04NDG-S18-AY?

NP80N04NDG-S18-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP80N04NDG-S18-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP80N04NDG-S18-AY?

For technical support, including NP80N04NDG-S18-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP80N04NDG-S18-AY requirements.

6.How does Aetrix verify that NP80N04NDG-S18-AY is sourced from the original manufacturer or authorized distributors?

All NP80N04NDG-S18-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP80N04NDG-S18-AY meets industry standards.

7.What is the process for return or replacement of NP80N04NDG-S18-AY?

All NP80N04NDG-S18-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP80N04NDG-S18-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP80N04NDG-S18-AY part is unused and in its original packaging.

Return procedure for NP80N04NDG-S18-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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